公开(公告)号：US20190113855A1

公开(公告)日：2019-04-18

申请号：US16217095

申请日：2018-12-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Burn Jeng Lin ,  Ching-Yu Chang

IPC: G03F7/20

CPC classification number: G03F7/70866 ,  G03F7/70341

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.

公开(公告)号：US10007177B2

公开(公告)日：2018-06-26

申请号：US14832931

申请日：2015-08-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Huei Weng ,  Ching-Yu Chang ,  Chun-Kuang Chen

IPC: G03F7/11 ,  G03F7/00 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

CPC classification number: G03F7/0035 ,  G03F7/091 ,  G03F7/095 ,  G03F7/11 ,  G03F7/2022 ,  G03F7/203 ,  G03F7/32 ,  G03F7/38

Abstract: A method of fabricating a semiconductor device includes forming a first photoresist layer over a substrate, over which a protective layer material is deposited to form a protective layer. A second photoresist layer is formed over the protective layer. A first lithography exposure process is performed, through a first mask, to expose the first and second photoresist layers, and to form a bottom latent pattern. A second lithography exposure process is performed, through a second mask, to expose the first and second photoresist layers, and to form a top latent pattern, where the top latent pattern at least partially overlaps the bottom latent pattern. The first and second photoresist layers and the protective layer are developed to form a first main feature and a second main feature from the bottom and top latent patterns respectively, and an opening in the protective layer vertically aligned with the second main feature.

公开(公告)号：US09958779B2

公开(公告)日：2018-05-01

申请号：US14876879

申请日：2015-10-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Han Lai ,  Ching-Yu Chang ,  Chien-Wei Wang

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/09 ,  G03F7/039 ,  G03F7/20 ,  G03F7/16 ,  H01L21/027 ,  B05D3/00 ,  H01L21/033 ,  C08F220/22 ,  C08F18/04

CPC classification number: G03F7/091 ,  B05D3/007 ,  C08F18/04 ,  C08F220/22 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/16 ,  G03F7/2041 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/033

Abstract: A patternable layer is formed over a substrate. A photo-sensitive layer is formed over the patternable layer. The photo-sensitive layer contains an additive. The additive contains at least a floating control chemical and a volume control chemical. A spin drying or a baking process is performed to the photo-sensitive layer. The floating control chemical causes the additive to rise upward during the spin drying or baking process. Thereafter, as a part of an extreme ultraviolet (EUV) lithography process, the photo-sensitive layer is exposed. One or more outgassing chemicals are generated inside the photo-sensitive layer during the exposing. The volume control chemical is sufficiently voluminous and dense to trap the outgassing chemicals inside the photo-sensitive layer.

公开(公告)号：US09905457B2

公开(公告)日：2018-02-27

申请号：US14583514

申请日：2014-12-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Bo-Jiun Lin ,  Ching-Yu Chang ,  Hai-Ching Chen ,  Tien-I Bao

IPC: H01L21/768 ,  H01L21/02 ,  H01B3/20 ,  H01L23/532

CPC classification number: H01L21/76837 ,  H01B3/20 ,  H01L21/02118 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53233 ,  H01L23/5329

Abstract: A method for forming an interconnect structure includes forming a patterned layer over a substrate, the patterned layer having an opening therein. A dielectric material is filled in the opening. The dielectric material has a precursor and a solvent, the solvent having a boiling point temperature greater than a precursor cross-linking temperature. A thermal treatment is performed on the dielectric material to form a dielectric layer.

公开(公告)号：US09891522B2

公开(公告)日：2018-02-13

申请号：US14812521

申请日：2015-07-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ya-Ling Cheng ,  Ching-Yu Chang

IPC: G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  G03F7/16 ,  G03F7/004 ,  G03F7/00

CPC classification number: G03F7/0392 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/16 ,  G03F7/162 ,  G03F7/168 ,  G03F7/322 ,  G03F7/325 ,  G03F7/38

Abstract: The present disclosure provides a sensitive material. The sensitive material comprises a copolymer that includes polymer units including a hydrophobic unit; a hydrophilic unit comprising an acid generator; and a connection unit bonded between the hydrophobic unit and the hydrophilic unit, the connection unit comprising an acid-labile group.

公开(公告)号：US09772559B2

公开(公告)日：2017-09-26

申请号：US14714887

申请日：2015-05-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ya-Ling Cheng ,  Ching-Yu Chang ,  Chien-Chih Chen

IPC: G03F7/38 ,  G03F7/42 ,  G03F7/038 ,  G03F7/40

CPC classification number: G03F7/422 ,  G03F7/038 ,  G03F7/38 ,  G03F7/40

Abstract: Methods for performing a photolithographic process are disclosed. The methods facilitate the removal of photosensitive from a wafer after the photosensitive has been used as an etch mask. The photosensitive may be a negative tone photosensitive that undergoes a cross-linking process on exposure to electromagnetic energy. By limiting the cross-linking through a reduced post-exposure bake temperature and/or through reduced cross-linker loading, the photoresist, or at least a portion thereof, may have a reduced solvent strip resistance. Because of the reduced solvent strip resistance, a portion of the photosensitive may be removed using a solvent strip. After the solvent strip, a dry etch may be performed to remove remaining portions of the photoresist.

公开(公告)号：US09761449B2

公开(公告)日：2017-09-12

申请号：US14457902

申请日：2014-08-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Chung Su ,  Ching-Yu Chang

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  G03F7/09

CPC classification number: H01L21/0276 ,  G03F7/091 ,  H01L21/02118

Abstract: In accordance with an embodiment a bottom anti-reflective layer comprises a surface energy modification group which modifies the surface energy of the polymer resin to more closely match a surface energy of an underlying material in order to help fill gaps between structures. The surface energy of the polymer resin may be modified by either using a surface energy modifying group or else by using an inorganic structure.

公开(公告)号：US09665004B2

公开(公告)日：2017-05-30

申请号：US14968708

申请日：2015-12-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/11

CPC classification number: G03F7/16 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11

Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.

公开(公告)号：US20170059993A1

公开(公告)日：2017-03-02

申请号：US14840363

申请日：2015-08-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/32 ,  G03F7/38 ,  G03F7/20

CPC classification number: G03F7/322 ,  C08F220/26 ,  C11D11/0047 ,  G03F7/004 ,  G03F7/0392 ,  G03F7/20 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38 ,  H01L21/0275

Abstract: A method for lithography patterning includes forming a material layer over a substrate; exposing a portion of the material layer to a radiation; and removing the exposed portion of the material layer in a developer, resulting in a patterned material layer. The developer comprises an organic solvent and a basic solute, wherein the organic solvent is more than 50% of the developer by weight. In an embodiment, the developer further comprises water that is less than 50% of the developer by weight.

Abstract translation: 光刻图案化方法包括在衬底上形成材料层; 将所述材料层的一部分暴露于辐射; 并且在显影剂中去除材料层的暴露部分，得到图案化的材料层。 显影剂包括有机溶剂和碱性溶质，其中有机溶剂大于显影剂重量的50％。 在一个实施方案中，显影剂还包含小于显影剂重量的50％的水。

公开(公告)号：US09581908B2

公开(公告)日：2017-02-28

申请号：US14334590

申请日：2014-07-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hau Wu ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  G03F7/30 ,  G03F7/038

CPC classification number: G03F7/038 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274

Abstract: A photoresist with a group which will decompose bonded to a high etching resistance moiety is provided. Alternatively, the group which will decompose can additionally be attached to a re-attachment group that will re-attach to the polymer after the group which will decompose has cleaved from the polymer. The photoresist may also comprise a non-leaving monomer with a cross-linking site and a cross-linking agent.

Abstract translation: 提供了具有分解键合到高耐蚀刻性部分的基团的光致抗蚀剂。 或者，将分解的基团另外可以连接到将在分解的基团从聚合物裂解后将重新连接到聚合物上的再附着基团。 光致抗蚀剂还可以包含具有交联位点和交联剂的非离去单体。