-
51.发明授权
公开(公告)号：US6056994A
公开(公告)日：2000-05-02
申请号：US477111
申请日：1995-06-07
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C4/12 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , B05D5/12
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/14 , C23C26/02 , C23C4/123 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/1878 , H01L41/318 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum, and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, and deposited on a substrate. In one embodiement the substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit the precursor liquid on the substrate. In another embodiment, the precursor is spin-coated on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.
摘要翻译： 制备在二甲苯/甲基乙基酮溶剂中包含若干金属2-乙基己酸酯如锶，钽和2-乙基己酸铋的前体液体，并沉积在基材上。 在一个实施方案中，将衬底放置在真空沉积室内，使前体液体发生雾化，并将雾流入沉积室，同时将室保持在环境温度下，以将前体液体沉积在衬底上。 在另一个实施方案中，将前体旋涂在基材上。 将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。
-
52.发明授权
公开(公告)号：US6022669A
公开(公告)日：2000-02-08
申请号：US687721
申请日：1996-07-26
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , G03F7/00 , G03C1/73
CPC分类号： H01L21/31691 , H01L28/55
摘要： A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.
摘要翻译： 将第一感光性液体溶液施加到基板上，通过暴露于辐射和显影进行图案化，并退火以形成期望的固体材料，例如并入集成电路的部件中的SrBi2Ta2O9。制造工艺被设计成保护自 来自常规IC处理的图案化固体材料并且保护常规材料（例如硅）从自身图案化固体材料中的元件。 在一个实施例中，在SrBi 2 Ta 2 O 9上形成氧化铋层，氧化铋蚀刻氧化铋。 氧化铋保护SrBi2Ta2O9免受腐蚀，并被蚀刻剂还原成铋。 任何剩余的氧化铋和大部分铋在退火过程中蒸发，剩余的铋掺入到SrBi2Ta2O9中。
-
公开(公告)号：US5688565A
公开(公告)日：1997-11-18
申请号：US480477
申请日：1995-06-07
IPC分类号： C23C4/12 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H05K3/10 , B05D3/00
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/14 , C23C4/123 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as stroritium tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a potion of the layered superlattice material film in a component of the integrated circuit.
摘要翻译： 制备在二甲苯/甲基乙基酮溶剂中包含多个金属2-乙基己酸酯如锶钽和2-乙基己酸铋的前体液体，将基底置于真空沉积室内，使前体液体雾化，并将雾 流入沉积室，同时将室保持在环境温度，以将一层前体液体沉积在基底上。 将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。 然后完成集成电路，以在集成电路的部件中至少包含一层分层超晶格材料膜。
-
公开(公告)号：US5614252A
公开(公告)日：1997-03-25
申请号：US478398
申请日：1995-06-07
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , B05D5/12
CPC分类号： B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/409 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/1295 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H01L41/1871 , H05K3/105
摘要： A precursor liquid comprising barium and strontium 2-ethylhexanoates and titanium 2-methoxyethanol in a 2-methoxyethanol solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of barium strontium titanate on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.
摘要翻译： 制备在2-甲氧基乙醇溶剂中包含钡和2-乙基己酸锶的前体液体和2-甲氧基乙醇钛，将底物置于真空沉积室内，使前体液体雾化，并将雾流入沉积室，同时 将室保持在环境温度下以将一层前体液体沉积在基底上。 将液体干燥，烘烤和退火以在基材上形成钛酸钡锶薄膜。 然后，完成集成电路以将集成电路的部件中的至少一部分分层超晶格材料膜包括在内。
-
公开(公告)号：US5119760A
公开(公告)日：1992-06-09
申请号：US470800
申请日：1990-01-26
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/448 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/31691 , H01L28/56
摘要： The present invention discloses methods and apparatus for depositing thin films of complex (compound) materials, including ferroelectrics, superconductors, and materials with high dielectric constants through a technique which is hereby entitled photo-enhanced chemical vapor deposition and activation (PECVDA). The technique involves the use of multiple heating sources including a resistive heat bias heater, a tuned optical source (UV or laser) and a source (halogen lamps or microwave sources) for applying high energy, rapid thermal pulses in a precise time sequence.
摘要翻译： 本发明公开了通过本文题目为光增强化学气相沉积和激活（PECVDA）的技术，沉积具有高介电常数的铁电体，超导体和材料的复合（复合）材料的薄膜的方法和装置。 该技术包括使用多个加热源，包括电阻式热偏置加热器，调谐光源（UV或激光）和源（卤素灯或微波源），用于以精确的时间顺序施加高能量快速热脉冲。
-
公开(公告)号：US07298640B2
公开(公告)日：2007-11-20
申请号：US11121145
申请日：2005-05-03
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/009 , G11C2213/31 , G11C2213/75 , G11C2213/79 , H01L27/24
摘要： A 1T1R resistive memory array comprised of chains of memory cells, where each memory cell is composed of a resistive element in parallel with a switch. Such chains of memory cells are non-volatile and provide for each of the memory cells to be randomly accessed.
摘要翻译： 由存储单元链组成的1T1R电阻式存储器阵列，其中每个存储单元由与开关并联的电阻元件组成。 存储器单元的这种链是非易失性的并且为每个存储器单元提供随机访问。
-
公开(公告)号：US07038206B2
公开(公告)日：2006-05-02
申请号：US10960876
申请日：2004-10-06
IPC分类号： G01J5/02
CPC分类号： G01J5/34
摘要： A pyrometer cell comprises a first ferroelectric capacitor, a second ferroelectric capacitor, and a difference circuit for determining the difference between the polarization charge, voltage, or current between the first and second ferroelectric capacitors. The cell is pulsed a plurality of times and an integrator circuit connected to the difference circuit provides an enhanced output signal representative of the integrated difference. An infrared imager is formed by an array of the pyrometer cells, with one ferroelectric capacitor in each cell exposed to an infrared source and the other ferroelectric capacitor not exposed to the infrared source.
摘要翻译： 高温计单元包括第一铁电电容器，第二铁电电容器和用于确定第一和第二铁电电容器之间的极化电荷，电压或电流之间的差的差分电路。 电池被脉冲多次，并且连接到差分电路的积分器电路提供表示积分差的增强的输出信号。 红外成像器由高温计单元的阵列形成，每个单元中的一个铁电电容器暴露于红外源，而另一个铁电电容器不暴露于红外源。
-
公开(公告)号：US06743643B2
公开(公告)日：2004-06-01
申请号：US10348706
申请日：2003-01-22
IPC分类号： H01G706
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory capacitor is removed by etching to form a moat region. A nonconductive oxygen barrier layer is deposited to cover the sidewall and bottom of the moat. The nonconductive oxygen barrier layer and a conductive diffusion barrier beneath the capacitor together provide a substantially continuous diffusion barrier between the capacitor and a switch. Also, the nonconductive hydrogen barrier layer, the nonconductive oxygen barrier, and the conductive diffusion barrier substantially completely envelop the capacitor, in particular a ferroelectric thin film in the capacitor.
摘要翻译： 非导电氢阻挡层沉积在基板上并完全覆盖集成电路存储单元的存储电容器和MOSFET开关上的表面积。 通过蚀刻去除与存储电容器的底部电极相邻的绝缘体层的一部分，以形成护城河区域。 沉积非导电氧阻隔层以覆盖护城河的侧壁和底部。 电容器下面的非导电氧阻挡层和导电扩散阻挡层一起在电容器和开关之间提供基本上连续的扩散阻挡层。 此外，非导电氢阻挡层，非导电氧阻挡层和导电扩散阻挡层基本上完全包围电容器，特别是电容器中的铁电薄膜。
-
59.发明授权Metal organic precursors for transparent metal oxide thin films and method of making same 失效透明金属氧化物薄膜的金属有机前体及其制备方法公开(公告)号：US06376691B1
公开(公告)日：2002-04-23
申请号：US09388044
申请日：1999-09-01
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译： 用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。 在一个实施例中，液体前体用于制造导电薄膜。 在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。 液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。 此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。 含有多种金属的液体前体具有更长的保质期。 向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。 在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。 本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。
-
公开(公告)号：US06373743B1
公开(公告)日：2002-04-16
申请号：US09385308
申请日：1999-08-30
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A ferroelectric non-volatile memory comprising: a plurality of memory cells each containing a ferroelectric FET, each of said ferroelectric FETs having a source, a drain, a substrate, and a gate. The FETs are arranged in an array comprising a plurality of rows and a plurality of columns. There are a plurality of row select lines, each associated with one of the rows of said ferroelectric FETs, and a plurality of column select lines, each associated with one of the columns of ferroelectric FETs. Each of the sources is directly electrically connected to its associated row select line, and each of the drains is directly electrically connected to its associated column select line. The source and substrate of each FET are also directly electrically connected. A memory cell is read by connecting its row select line to ground, and its column select line to a small voltage. All the gates, and the row select lines of non-selected cells are open or connected to a high resistance source. Thus, the current in the selected column select line and row select line is a measure of the state of the selected cell. Each FET is fabricated using a self-aligned process so that no portion of a source/drain underlies the gate.
摘要翻译： 一种铁电非易失性存储器，包括：各自含有铁电FET的多个存储单元，每个所述铁电FET具有源极，漏极，基板和栅极。 FET被布置成包括多个行和多个列的阵列。 存在多个行选择线，每条线选择线与所述强电介质FET的行中的一条相关联，以及多个列选择线，每条列选择线与铁电FET中的一列相关联。 每个源直接电连接到其相关联的行选择线，并且每个漏极直接电连接到其相关联的列选择线。 每个FET的源极和衬底也直接电连接。 通过将其行选择线连接到地来读取存储单元，并且其列选择线为小电压。 所有的门和未选择的单元的行选择线是打开的或连接到高电阻源。 因此，所选列选择行和行选择行中的电流是所选单元格的状态的度量。 每个FET使用自对准工艺制造，使得源极/漏极的任何部分不在栅极之下。
-
-
-
-
-
-
-
-
-
搜索结果
103 条记录 (耗时 0.034 秒)