摘要:
Charged particle beam equipment has a processing unit for calibrating dimension values of an enlarged specimen image, and means for changing the amount by which a charged particle beam is scanned. Also, a specimen stand has a mechanism for holding a specimen having a periodical structure or a specimen simultaneously having a periodical structure and a non-periodica structure, and a storage device for automatically changing a magnification for an enlarged specimen image, and storing measured values at all magnifications.
摘要:
There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.
摘要:
A charged particle beam apparatus is provided which can prevent the accuracy of positional shift detection from being degraded owing to differences in picture quality, so that even when the state of a charged particle beam is changed at the time that optical conditions are changed or the optical axis changes with time, an auto adjustment of the optical axis can be realized easily and highly accurately. In the charged particle beam apparatus, evaluation or adjustment of focusing is conducted before the deflection condition of an alignment deflector for optical axis adjustment is changed or a table of focus adjustment amounts in correspondence with deflection conditions of the alignment deflector is provided, whereby when the deflection condition of the alignment deflector is changed, a focus adjustment is carried out in accordance with the table.
摘要:
There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.
摘要:
There is disclosed a charged particle beam device which judges whether or not an image based on a dark-field signal has an appropriate atomic number contrast. Input reference information, a bright-field image or a back-scattered electron image is compared with a dark-field image, and it is judged whether or not a correlation value between them or the dark-field image has a predetermined contrast. According to such a constitution, it is possible to obtain information by which it is judged whether or not the dark-field image has an appropriate atomic number contrast.
摘要:
A sample image display method and an image shift sensitivity measuring method to be executed in a charged particle beam apparatus are provided for accurately correcting an image drift in any observing and analyzing condition such as an accelerating voltage, a working distance or a raster rotation. When obtaining a reference image used for detecting a drift, the process is executed to obtain an image having the different image shift amount from that of the reference image at a time and to occasionally measure an image shift sensitivity. Then, the process is executed to automatically register this reference image and the image shift sensitivity and to detect a drift amount and control an image shift (correct a drift) according to the registered conditions when correcting the drift.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要:
The present invention is intended to prevent the deterioration of resolution due to increase in off-axis aberration resulting from the deviation of a primary electron bean from the optical axis of a scanning electron microscope. A scanning electron microscope is provided with an image shifting deflector system including two deflectors disposed respectively at upper and lower stages. The deflector disposed at the lower stage is a multipole electrostatic deflecting electrode and is disposed in an objective. Even if the distance of image shifting is great, an image of a high resolution can be formed and dimensions can be measured in a high accuracy. The SEM is able to achieving precision inspection at a high throughput when applied to inspection in semiconductor device fabricating processes that process a wafer having a large area and provided with very minute circuit elements.
摘要:
The present invention is intended to prevent the deterioration of resolution due to increase in off-axis aberration resulting from the deviation of a primary electron bean from the optical axis of a scanning electron microscope. A scanning electron microscope is provided with an image shifting deflector system including two deflectors disposed respectively at upper and lower stages. The deflector disposed at the lower stage is a multipole electrostatic deflecting electrode and is disposed in an objective. Even if the distance of image shifting is great, an image of a high resolution can be formed and dimensions can be measured in a high accuracy. The SEM is able to achieving precision inspection at a high throughput when applied to inspection in semiconductor device fabricating processes that process a wafer having a large area and provided with very minute circuit elements.