公开(公告)号：US20070174003A1

公开(公告)日：2007-07-26

申请号：US11650948

申请日：2007-01-09

申请人： Masaki Ueno ,  Katsuji Wada

发明人： Masaki Ueno ,  Katsuji Wada

IPC分类号： G06F19/00 ,  F02D11/10 ,  F02B17/00 ,  F02M51/00 ,  F02M25/07 ,  G06G7/70

CPC分类号： F02D41/32 ,  F02D41/0002 ,  F02D41/0007 ,  F02D41/0072 ,  F02D41/1401 ,  F02D41/3064 ,  F02D41/38 ,  F02D2041/1433 ,  F02D2200/0402 ,  F02D2200/0406 ,  F02D2200/0414 ,  Y02T10/42

摘要： A control system for an internal combustion engine having at least one fuel injection valve for injecting fuel to an intake pipe or a combustion chamber of the engine. Intake gas state parameters indicative of a state of the intake gases supplied to the engine are detected. Demand values of the intake gas state parameters are calculated according to operating condition parameters indicative of an operating condition of the engine. The intake gas state is controlled so that the intake gas state parameters coincide with the demand values. A control value is then calculated according to the operating condition parameters and deviations of the intake gas state parameters from the demand values. Accordingly, an amount of fuel injected by the at least one fuel injection valve is controlled according to the control value.

摘要翻译： 一种用于内燃机的控制系统，具有至少一个用于将燃料喷射到发动机的进气管或燃烧室的燃料喷射阀。 检测表示供给发动机的进气的状态的进气气体状态参数。 根据指示发动机的运行状态的运行状态参数来计算进气状态参数的需求值。 进气状态被控制，使得进气状态参数与需求值一致。 然后根据操作条件参数和进气气体状态参数与需求值的偏差来计算控制值。 因此，根据控制值控制由至少一个燃料喷射阀喷射的燃料量。

公开(公告)号：US20070033938A1

公开(公告)日：2007-02-15

申请号：US11496719

申请日：2006-08-01

申请人： Masaki Ueno

发明人： Masaki Ueno

IPC分类号： F02B33/44

CPC分类号： F02B39/10 ,  F02B37/004 ,  F02B37/013 ,  F02B37/04 ,  F02B37/10 ,  F02B37/14 ,  F02B37/18 ,  F02B37/22 ,  F02B37/24 ,  F02D41/0002 ,  F02D41/0007 ,  F02D2041/002 ,  Y02T10/144 ,  Y02T10/42

摘要： An engine system includes a compressor system which is at least partially driven by an electric motor, and a turbine system. The system includes a detector for detecting an actual supercharging pressure. A target supercharging pressure is determined based on operational conditions of the engine. A first control demand value is calculated to drive the motor controller, such that the actual supercharging pressure approaches the target supercharging pressure. A target value of the first control demand value is determined based on the operational conditions of the engine. A second control demand value, a difference between the target value and the first control command value is applied to the turbine system to adjust the rotation of the turbine such that the first control demand value converges to the target value.

摘要翻译： 发动机系统包括至少部分地由电动机驱动的压缩机系统和涡轮机系统。 该系统包括用于检测实际增压压力的检测器。 目标增压压力是根据发动机的运行条件确定的。 计算第一控制要求值以驱动电动机控制器，使得实际增压压力接近目标增压压力。 基于发动机的运行状况来确定第一控制要求值的目标值。 将第二控制要求值，目标值和第一控制指令值之间的差应用于涡轮机系统，以调整涡轮机的旋转，使得第一控制需求值收敛到目标值。

公开(公告)号：US07046490B1

公开(公告)日：2006-05-16

申请号：US09479267

申请日：2000-01-06

申请人： Masaki Ueno ,  Hideyasu Nagai ,  Koichi Suzuki ,  Tomoki Fukagawa ,  Fuminori Hikami

发明人： Masaki Ueno ,  Hideyasu Nagai ,  Koichi Suzuki ,  Tomoki Fukagawa ,  Fuminori Hikami

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3903 ,  H01L43/10

摘要： A spin valve magnetoresistance sensor of a thin film magnetic head. In one embodiment, a spin valve magnetoresistance sensor is provided with a spin valve film, in which a base layer including a first base film of Ta or some other nonmagnetic metal and, on top of this, a second base film of an alloy represented by NiFeX (where X is at least one element selected from among Cr, Nb, Rh) is formed on a substrate, and on top of this are formed by layering a free magnetic layer and pinned magnetic layer arranged to enclose a nonmagnetic conductive layer, as well as an antiferromagnetic layer, the second base film has an fcc (face-centered cubic) structure and also has a (111) orientation.

摘要翻译： 薄膜磁头的自旋阀磁阻传感器。 在一个实施例中，自旋阀磁阻传感器设置有自旋阀膜，其中包括Ta的第一基膜或其他一些非磁性金属的基底层，并且其上形成第二基底膜 NiFeX（其中X是选自Cr，Nb，Rh中的至少一种元素）形成在基板上，并且其上形成有通过分层设置为包围非磁性导电层的自由磁性层和固定磁性层而形成，如 作为反铁磁层，第二基膜具有fcc（面心立方体）结构，并且还具有（111）取向。

公开(公告)号：US20060097353A1

公开(公告)日：2006-05-11

申请号：US11313828

申请日：2005-12-22

申请人： Kensaku Motoki ,  Masaki Ueno

发明人： Kensaku Motoki ,  Masaki Ueno

IPC分类号： H01L29/207 ,  H01L21/20

CPC分类号： C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207

摘要： Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrating via the non-C-plane facets to the gallium nitride crystal.

摘要翻译： 可以通过制备非C面氮化镓晶体，向非C面氮化镓晶种提供包括镓，氮和氧的材料气体，将氧可以掺杂到氮化镓晶体中，生长非C面 在非C面氮化镓晶种上形成氮化镓晶体，并允许氧通过非C面表面渗入生长的氮化镓晶体。 否则，可以通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到氮化镓晶体中，将包括镓，氮和氧的材料气体供应到C面氮化镓晶种 晶体或三旋转对称的外来晶种，在晶种上生长具有非C面的小面的C面氮化镓晶体，保持C面氮化镓晶体上的刻面，并允许氧渗透通过 非C面面到氮化镓晶体。

公开(公告)号：US07040294B2

公开(公告)日：2006-05-09

申请号：US11001006

申请日：2004-12-02

申请人： Katsuichi Yagisawa ,  Katsunori Komuro ,  Yasuaki Nagai ,  Toshikazu Saito ,  Masaki Ueno ,  Minoru Ueda

发明人： Katsuichi Yagisawa ,  Katsunori Komuro ,  Yasuaki Nagai ,  Toshikazu Saito ,  Masaki Ueno ,  Minoru Ueda

IPC分类号： F02M55/02

CPC分类号： F02D33/006 ,  B62J37/00 ,  F02B61/02 ,  F02M37/007 ,  F16L3/127 ,  F16L3/16 ,  F16L9/147 ,  F16L11/12 ,  F16L37/0987 ,  F16L58/1054 ,  F16L2011/047

摘要： To manufacture fuel piping for connecting a fuel tank and a drive unit including an engine using a resin material at a low cost and to cause the fuel piping to suitably follow the movement of the fuel tank and the drive unit when the vehicle is being operated. A fuel piping includes connectors at both ends of a pipe member formed of resin material into a thin tubular shape for connecting between a fuel tank and a fuel injection apparatus for supplying fuel to an engine of a two-wheel vehicle or the like via the connectors. One or more bent portions are formed at the midsection of the pipe member of the fuel piping.

摘要翻译： 为了制造燃料管道，用于以低成本连接燃料箱和包括使用树脂材料的发动机的驱动单元，并且使得燃料管道在车辆运行时适当地跟随燃料箱和驱动单元的运动。 燃料管道包括由树脂材料形成的管状构件的两端的连接器，形成为薄的管状，用于连接燃料箱和燃料喷射装置，用于通过连接器向两轮车辆等的发动机供应燃料 。 一个或多个弯曲部分形成在燃料管道的管构件的中部。

公开(公告)号：US06998284B2

公开(公告)日：2006-02-14

申请号：US11057830

申请日：2005-02-15

申请人： Takashi Kyono ,  Masaki Ueno ,  Katsushi Akita

发明人： Takashi Kyono ,  Masaki Ueno ,  Katsushi Akita

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/34333

摘要： A method of forming a semiconductor device having a quantum well structure, comprises the steps of: (a) forming a well film at a first temperature, the well film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium; (b) forming a first barrier film on the well film, the first barrier film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium, and an indium composition of the first barrier film being smaller than that of the well film; (c) changing temperature without forming a semiconductor film; and (d) forming a second barrier film at a second temperature higher than the first temperature, the second barrier film being made of a III-V nitride semiconductor on the first barrier film, the first barrier film being formed at a third temperature, the third temperature being equal to or higher than the first temperature, and the third temperature being lower than the second temperature.

摘要翻译： 一种形成具有量子阱结构的半导体器件的方法包括以下步骤：（a）在第一温度下形成阱膜，阱膜由含有氮，铟和镓的III-V族氮化物半导体制成; （b）在所述阱膜上形成第一阻挡膜，所述第一阻挡膜由包含氮，铟和镓的III-V族氮化物半导体制成，并且所述第一阻挡膜的铟组合物小于所述阱膜的铟组分 ; （c）不形成半导体膜而改变温度; 和（d）在高于第一温度的第二温度下形成第二阻挡膜，第二阻挡膜由第一阻挡膜上的III-V族氮化物半导体构成，第一阻挡膜形成在第三温度， 第三温度等于或高于第一温度，第三温度低于第二温度。

公开(公告)号：US20050199903A1

公开(公告)日：2005-09-15

申请号：US11057830

申请日：2005-02-15

申请人： Takashi Kyono ,  Masaki Ueno ,  Katsushi Akita

发明人： Takashi Kyono ,  Masaki Ueno ,  Katsushi Akita

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343 ,  H01L29/24

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/34333

摘要： A method of forming a semiconductor device having a quantum well structure, comprises the steps of: (a) forming a well film at a first temperature, the well film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium; (b) forming a first barrier film on the well film, the first barrier film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium, and an indium composition of the first barrier film being smaller than that of the well film; (c) changing temperature without forming a semiconductor film; and (d) forming a second barrier film at a second temperature higher than the first temperature, the second barrier film being made of a III-V nitride semiconductor on the first barrier film, the first barrier film being formed at a third temperature, the third temperature being equal to or higher than the first temperature, and the third temperature being lower than the second temperature.

摘要翻译： 一种形成具有量子阱结构的半导体器件的方法包括以下步骤：（a）在第一温度下形成阱膜，阱膜由含有氮，铟和镓的III-V族氮化物半导体制成; （b）在所述阱膜上形成第一阻挡膜，所述第一阻挡膜由包含氮，铟和镓的III-V族氮化物半导体制成，并且所述第一阻挡膜的铟组合物小于所述阱膜的铟组分 ; （c）不形成半导体膜而改变温度; 和（d）在高于第一温度的第二温度下形成第二阻挡膜，第二阻挡膜由第一阻挡膜上的III-V族氮化物半导体构成，第一阻挡膜形成在第三温度， 第三温度等于或高于第一温度，第三温度低于第二温度。

公开(公告)号：US20050029173A1

公开(公告)日：2005-02-10

申请号：US10902841

申请日：2004-08-02

申请人： Toshihide Kimisawa ,  Takashi Iwamoto ,  Masaki Ueno ,  Osamu Suzuki

发明人： Toshihide Kimisawa ,  Takashi Iwamoto ,  Masaki Ueno ,  Osamu Suzuki

IPC分类号： B60K15/077 ,  B01D29/15 ,  B01D35/027 ,  F02M37/22 ,  B01D35/28

CPC分类号： B01D29/15 ,  B01D35/027 ,  B01D35/153 ,  B01D2201/0415

摘要： A strainer device for a fuel tank includes a sucking passage member provided with a passage opened in the fuel tank; a filtering member attached to the sucking passage member for covering a hole of the passage; and a conduit connecting portion extending outside the fuel tank for connecting a conduit for guiding fuel passing through the filtering member. The conduit connecting member is attached to the sucking passage member, so that a concave portion is formed at a connecting portion for receiving a check valve for preventing the fuel from flowing back from outside of the fuel tank.

摘要翻译： 一种用于燃料箱的过滤器装置包括一个设置有在燃料箱中开口的通道的吸入通道构件; 安装在所述吸引通道部件上以覆盖所述通道的孔的过滤构件; 以及延伸到燃料箱外部的导管连接部分，用于连接用于引导通过过滤构件的燃料的导管。 导管连接构件安装在吸引通道构件上，从而在用于接收止回阀的连接部分处形成一个凹部，用于防止燃料从燃料箱外部流出。

公开(公告)号：US06823722B2

公开(公告)日：2004-11-30

申请号：US10290215

申请日：2002-11-08

申请人： Hideharu Yamazaki ,  Kei Machida ,  Masaki Ueno

发明人： Hideharu Yamazaki ,  Kei Machida ,  Masaki Ueno

IPC分类号： G01N502

CPC分类号： F01N3/0835 ,  F01N3/0814 ,  F01N3/0878 ,  F01N3/101 ,  F01N11/00 ,  F01N13/009 ,  F01N13/0093 ,  F01N2550/03 ,  F02D41/064 ,  F02D41/1456 ,  F02D41/1494 ,  F02D41/1495 ,  F02D2200/0414 ,  F02D2200/0418 ,  Y02T10/22 ,  Y02T10/47

摘要： An adsorbent state determining apparatus is provided for accurately determining the state of an adsorbent including a deterioration while ensuring elimination of the influence of impurities sticking on a sensor element of a humidity sensor. The adsorbent state determining apparatus determines the state of an adsorbent disposed in an exhaust system of an internal combustion engine for purifying exhaust gases. The adsorbent is capable of adsorbing hydrocarbons and moisture within exhaust gases. The adsorbent state determining apparatus comprises a humidity sensor disposed near the adsorbent in the exhaust system for detecting a humidity of exhaust gases; a heater for executing cleaning for removing impurities sticking on a sensor element of the humidity sensor; and an ECU for determining whether or not the heater has completed the cleaning, and for determining the state of the adsorbent in accordance with the humidity of exhaust gases detected by the humidity sensor when the ECU determines that the cleaning is completed.

摘要翻译： 提供了一种吸附剂状态确定装置，用于在确保消除粘附在湿度传感器的传感器元件上的杂质的影响的同时精确地确定包含劣化的吸附剂的状态。 吸附剂状态确定装置确定用于净化废气的内燃机的排气系统中的吸附剂的状态。 吸附剂能够吸附废气中的碳氢化合物和水分。 吸附剂状态确定装置包括设置在排气系统中的吸附剂附近的用于检测废气湿度的湿度传感器; 用于执行清洁以去除粘附在湿度传感器的传感器元件上的杂质的加热器; 以及ECU，用于确定加热器是否已经完成了清洁，并且用于当ECU确定清洁完成时，根据湿度传感器检测到的废气的湿度确定吸附剂的状态。

公开(公告)号：US06516772B2

公开(公告)日：2003-02-11

申请号：US09904851

申请日：2001-07-16

申请人： Masaki Ueno ,  Yasunori Ehara ,  Masahiro Sato ,  Ken Ogawa ,  Isao Komoriya

发明人： Masaki Ueno ,  Yasunori Ehara ,  Masahiro Sato ,  Ken Ogawa ,  Isao Komoriya

IPC分类号： F02B7508

CPC分类号： F02D41/005 ,  F02B17/005 ,  F02B23/101 ,  F02B2075/125 ,  F02D37/02 ,  F02D41/0032 ,  F02D41/1497 ,  F02D41/3029 ,  F02D2041/1416 ,  F02M25/08 ,  F02M26/53 ,  F02M2026/009 ,  Y02T10/123 ,  Y02T10/47

摘要： In a direct injection spark ignition engine which is operable in lean-burn operation modes including a pre-mixture combustion mode and a stratified combustion operation mode and a stoichiometric air/fuel ratio operation mode, which are different in the desired air/fuel ratio. The degradation of combustion state is detected through misfire detection and if it is determined to be degraded, the desired air/fuel ratio, the EGR flow rate and the ignition timing are changed when the engine is operated in the stratified combustion operation mode, while the desired air/fuel ratio, the EGR flow rate and the purge flow rate are changed when the engine is operated in the pre-mixture combustion operation mode, thereby ensuring to suppress the combustion state degradation effectively.

摘要翻译： 在直喷式火花点火式发动机中，其可在包括预混合燃烧模式和分层燃烧运行模式以及理想空燃比操作模式的稀薄燃烧运行模式中操作，所述预混合燃烧模式和所需空气/燃料比不同。 通过失火检测来检测燃烧状态的劣化，如果判定为劣化，则在发动机以分层燃烧运转模式运转时改变所需的空燃比，EGR流量和点火正时， 期望的空燃比，EGR流量和排气流量在发动机在预混合燃烧运转模式下运转时发生变化，从而有效地抑制了燃烧状态的劣化。