公开(公告)号：US4007395A

公开(公告)日：1977-02-08

申请号：US580473

申请日：1975-05-23

申请人： Yasuhiko Nonaka ,  Naohiro Goto ,  Keiichi Shidara

发明人： Yasuhiko Nonaka ,  Naohiro Goto ,  Keiichi Shidara

IPC分类号： H01J29/45 ,  H01L31/08 ,  H01J31/38

CPC分类号： H01J29/456 ,  H01J9/233

摘要： In a method of manufacturing a target structure for use in a photoconductive image pickup tube when depositing a P-type photoconductive film on an N-type transparent conductive film deposited on one side of a transparent substrate which acts as an incident window of the image pickup tube, the P-type photoconductive film is made up of first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time than that of the second photoconductive substance and the deposition of the first photoconductive substance is terminated before completion of the deposition of the second photoconductive material thereby forming a layer of the first photoconductive substance not contiguous to the junction between the N-type transparent conductive film and the P-type photoconductive film and having a predetermined thickness.

摘要翻译： 在制造用于感光图像拾取管中的目标结构的方法中，当将P型光电导膜沉积在作为图像拾取器的入射窗口的透明基板的一侧上沉积的N型透明导电膜上时 P型光电导膜由第一和第二光电导物质组成。 第一光电导物质的沉积的开始被延迟比第二光电导物质的预定时间，并且在完成第二光电导材料的沉积之前终止第一光电导物质的沉积，从而形成第一光电导层 物质不与N型透明导电膜和P型光电导膜之间的接合点相邻并且具有预定厚度。

公开(公告)号：US3956025A

公开(公告)日：1976-05-11

申请号：US454647

申请日：1974-03-25

申请人： Hermann Statz ,  Wolfgang M. Feist

发明人： Hermann Statz ,  Wolfgang M. Feist

IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/06 ,  H01L29/78 ,  H01L31/00 ,  H01L31/0216 ,  H01L21/265

CPC分类号： H01L31/0216 ,  H01J29/451 ,  H01J29/455 ,  H01J9/233 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/0611 ,  H01L29/78 ,  H01L31/00 ,  Y10S257/917

摘要： A semiconductor structure having a surface insulating layer formed as a grid with charges implanted in the insulating material to prevent inversion and, hence, channeling between adjacent semiconductor regions, preferably for use in nonblooming vidicon. The method of manufacturing such a structure uses ion implantation to create immobile positive charges in a grid pattern in an insulating layer in regions spaced from the interface between the insulating layer and the semiconductor body. The insulating layer is of sufficient thickness that substantially all of the charge sites in the insulating layer are separated from the outer surface of the insulator by a sufficient distance to effectively prevent a negative electric field from reaching into the silicon.

摘要翻译： 具有表面绝缘层的半导体结构，其形成为格栅，电荷注入绝缘材料中，以防止反转，并因此在相邻的半导体区之间引导沟道，优选用于不起伏的虚像。 制造这种结构的方法使用离子注入来在与绝缘层和半导体本体之间的界面间隔开的区域中的绝缘层中以栅格图案形成固定的正电荷。 绝缘层具有足够的厚度，绝缘层中的基本上所有的电荷位置与绝缘体的外表面分开足够的距离，以有效地防止负电场进入硅。

公开(公告)号：US3941672A

公开(公告)日：1976-03-02

申请号：US450186

申请日：1974-03-11

申请人： Yasuo Tanaka ,  Hideaki Yamamoto ,  Keiko Ooki ,  Naohiro Goto ,  Toru Takigawa

发明人： Yasuo Tanaka ,  Hideaki Yamamoto ,  Keiko Ooki ,  Naohiro Goto ,  Toru Takigawa

IPC分类号： H01J9/233 ,  H01J9/20 ,  H01J29/45 ,  H01L21/00 ,  H01L31/00 ,  H01L31/0264 ,  C23C15/00

CPC分类号： H01L21/00 ,  H01J29/456 ,  H01J9/20 ,  H01J9/233 ,  H01L31/00

摘要： A method of manufacturing a light sensitive heterodiode comprising an n-type transparent conductive layer and a p-type photoconductive layer provided thereon and forming rectifying contact therewith, in which before providing the p-type photoconductive layer on the n-type transparent conductive layer the surface of the latter is smoothed down by mechanical polishing or by bombarding it with ions accelerated by discharge.

摘要翻译： 一种制造光敏异质二极管的方法，其包括设置在其上的n型透明导电层和p型光电导层，并与其形成整流接触，其中在n型透明导电层上提供p型光电导层之前 后者的表面通过机械抛光或通过放电加速的离子轰击来平滑。

公开(公告)号：US3909308A

公开(公告)日：1975-09-30

申请号：US49877274

申请日：1974-08-19

申请人： RCA CORP

发明人： HEAGY JOHN FRANKLIN

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  H01L21/00 ,  H01L7/54

CPC分类号： C23C14/5833 ,  C23C14/0021 ,  C23C14/08 ,  C23C14/58 ,  C23C14/584 ,  H01J9/233 ,  H01L21/00 ,  Y10S148/007 ,  Y10S148/12

摘要： A layer of substantially uniform lead monoxide is vapor deposited on a supported signal electrode of a vidicon target. The lead monoxide layer is formed on the signal electrode as a substantially homogeneous compensated intrinsic, or n type, electrically conductive material. An electrical potential is applied to the supported layer of lead monoxide to affect an electrical discharge through a continually renewed atmosphere consisting essentially of one of the inert gases, or nitrogen, whereby ion bombardment of the layer is accomplished.

摘要翻译： 一层基本均匀的一氧化铅气相沉积在一个维持目标靶的支撑信号电极上。 一氧化铅层形成在信号电极上，作为基本均匀的补偿本征或n型导电材料。 将电位施加到负载的一氧化铅层，以通过基本上由一种惰性气体或氮组成的连续更新的气氛来影响放电，从而实现该层的离子轰击。

公开(公告)号：US3893157A

公开(公告)日：1975-07-01

申请号：US36653473

申请日：1973-06-04

申请人： SIGNETICS CORP

发明人： SILZARS ARIS ,  BALLONOFF AARON

IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L23/29 ,  H01L27/00 ,  H01L5/00

CPC分类号： H01L23/291 ,  H01J9/233 ,  H01J29/455 ,  H01L21/00 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation resistance PN junction diode with a radiation shield which is attached to the semiconductor device and extends over, but is separated from, portions of the device which it is desired to have shielded from radiation. The purpose of the shield is to provide a radiation resistant semiconductor target for use in planar electron bombarded semiconductor devices, electron beam recorders, and other devices requiring periodic or continuous electron beam or other low energy radiation monitoring. In accordance with a preferred method of the invention, the electron beam shield is fabricated simultaneously on each of a plurality of PN junction diodes in an array on a semiconductor wafer.

摘要翻译： 具有辐射屏蔽的辐射电阻PN结二极管，其附接到半导体器件并且延伸超过该器件的期望与辐射屏蔽的部分，但是与其隔开。 屏蔽的目的是提供一种用于平面电子轰击的半导体器件，电子束记录器和需要周期性或连续电子束或其他低能量辐射监测的其它器件的耐辐射半导体靶。 根据本发明的优选方法，在半导体晶片上的阵列中的多个PN结二极管的每一个上同时制造电子束屏蔽。

公开(公告)号：US3823048A

公开(公告)日：1974-07-09

申请号：US28090572

申请日：1972-08-15

申请人： WESTERN ELECTRIC CO

发明人： HETRICH H

IPC分类号： H01J9/233 ,  H01J29/45 ,  H01L21/308 ,  H01L7/50

CPC分类号： H01J9/233 ,  H01J29/455 ,  H01L21/3081

摘要： IN MAKING A TARGET FOR A TELEVISION CAMERA TUBE, IT IS NECESSARY TO THIN THE BACKSIDE OF A SEMICONDUCTIVE SUBSTRATE, WHICH IS OPPOSITE A FACE HAVING A DIODE ARRAY THEREON. TO THIN THE SUBSTRATE, IT IS POSITIONED FACE DOWN ON A FLLUID NONDELETERIOUS TO THE SUBSTRATE AND DIOD ARRAY. THE FLUID IS CONTAINED IN A CAVITY OF A HOLDING DEVICE. THE POSITIONING IS SUCH THAT THERE IS NO SPACE BETWEEN THE FLUID AND THE SUBSTRATE. AN APERTURED TOP MEMBER IS THEN MOUNTED ON THE SUBSTRATE AND THE HOLDING DEVICE TO RETAIN THE SUBSTRATE ON THE FLUID. THE ASSEMBLY OF THE HOLDING DEVICE AND TOP MEMBER WITH THE SUBSTRATE THEREBETWEEN IS IMMERSED AND ROATED IN AN ETCHANT TO THIN THE BBACKSIDE OF THE SUBSTRATE THROUGH THE APERTURE OF THE TOP MEMBER. THE FLUID PROVIDES A TIGHT SEAL ON THE FACE OF THE SUBSTRATE TO PREVENT THE ETCHANT FROM DAMAGING SUCH FACE AND THE DIODE ARRAYL THEREON A VENT EXTENDING FROM THE CAVITY OF THE HOLDING DEVICE TO ITS OUTER EDGE ASSIST IN THE SUBSEQUENT REMOVAL OF THE SUBSTRATE FROM THE CAVITY.

公开(公告)号：US3821092A

公开(公告)日：1974-06-28

申请号：US29671872

申请日：1972-10-11

申请人： WESTINGHOUSE ELECTRIC CORP

发明人： FROBENIUS W

IPC分类号： H01J9/233 ,  H01J29/44 ,  H01L27/00 ,  H01L31/10 ,  C23B5/48 ,  H01J31/26 ,  H01L15/00

CPC分类号： H01J29/44 ,  H01J9/233 ,  H01L27/00

摘要： A charge storage device of the type in which a target electrode provides a plurality of spatially distributed charge storage sites formed on an output side of semiconductor wafer with means associated with the storage sites for sensing and converting the charge on the storage sites into an electrical signal. Input excitation is directed onto the other or input side of the semiconductor wafer and may be in the form of electrons or light capable of generating electron-hole pairs within the semiconductor wafer which diffuse through to the storage sites. The output side of the semiconductor wafer is provided with an apertures insulating layer with a reading electron beam making contact through the apertures in the insulating coating to the spatially distributed storage sites within these apertures. This invention is directed to an improvement in the structure and the process for manufacture thereof wherein pillars of the semiconductive wafer extend from the substrate of the wafer above the insulating layer and a semiconductive region of opposite type conductivity to that of the wafer is provided in the top of the pillar and an electrical conductive contact is provided on the top of said pillar for better electron beam contact to the target. The invention is directed to this structure and the process of fabricating the electrical contact onto the top of the pillar. The process includes the spinning of a resist coating over the pillared surface of the target in such a manner to provide a desired resist pattern for the manufacturing process and thereby avoids other difficult masking process steps.

公开(公告)号：US3783324A

公开(公告)日：1974-01-01

申请号：US3783324D

申请日：1972-09-11

申请人： RCA CORP

发明人： WRONSKI C ,  YIM W ,  DRESNER J

IPC分类号： H01J29/45 ,  H01L31/08 ,  H01J31/28

CPC分类号： H01J29/45 ,  H01J9/233

摘要： A photosensitive charge storage electrode comprises a photoconductive substrate having a bulk region with a surface region of reduced conductivity. On the surface region is a selectively insulating layer of a composition such that the top of the valence band of the layer is essentially at the same energy level as the top of the valence band in the bulk region of the photoconductive substrate.

摘要翻译： 光敏电荷存储电极包括具有导电性降低的表面区域的主体区域的光导基板。 表面区域是组成物的选择性绝缘层，使得该层的价带的顶部基本上处于与光电导基体的体区域中的价带顶部相同的能级。

公开(公告)号：US3725751A

公开(公告)日：1973-04-03

申请号：US3725751D

申请日：1970-01-20

申请人： SONY CORP

发明人： WAKAMIYA K

IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L21/20 ,  H01L27/00 ,  H01L11/00 ,  H01L15/00

CPC分类号： H01L21/00 ,  H01J9/233 ,  H01J29/455 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/00 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S257/926 ,  Y10S438/969

摘要： A target using a diode array for pickup tubes which consists of a semiconductor substrate including on one surface thereof an array of regions, defining PN junctions with the major portion of the substrate formed from a vapor-deposited layer of the same conductivity type as the substrate and having a plurality of polycrystalline regions of low resistivity of conductivity type opposite to the substrate.

摘要翻译： 一种使用用于拾取管的二极管阵列的靶，其由半导体衬底组成，半导体衬底在其一个表面上具有区域阵列，该区域阵列与由与衬底相同的导电类型的气相沉积层形成的衬底的主要部分形成PN结 并且具有与基板相反的导电类型的低电阻率的多个多晶区域。

公开(公告)号：US3717790A

公开(公告)日：1973-02-20

申请号：US3717790D

申请日：1971-06-24

申请人： BELL TELEPHONE LABOR INC

发明人： MATHEWS J ,  MOLINE R ,  DALTON J ,  MACRAE A ,  PICKAR K ,  SEIDEL H

IPC分类号： H01J9/233 ,  H01L21/00 ,  H01L27/00 ,  H01L17/00 ,  H01L15/00

CPC分类号： H01L21/00 ,  H01J9/233 ,  H01L27/00

摘要： The specification describes processes using ion implantation for preparing silicon diode array targets for video camera tubes. Bulk silicon prepared in the conventional way has sufficient nonuniformity over the target area to produce contrast patterns in the video output. This effect can be eliminated by initially preparing high resistivity bulk material and implanting the bulk impurities to obtain the desired bulk resistivity. Advantageous procedures for implanting the diodes are also described.

摘要翻译： 该说明书描述了使用离子注入来制备用于摄像机管的硅二极管阵列靶的工艺。 以常规方式制备的散装硅在目标区域上具有足够的不均匀性，以在视频输出中产生对比度图案。 通过初始制备高电阻率散装材料并植入大块杂质以获得所需的体电阻率，可以消除这种影响。 还描述了用于注入二极管的有利程序。