公开(公告)号：US06955925B1

公开(公告)日：2005-10-18

申请号：US09914920

申请日：2000-03-03

申请人： Paul P Donohue ,  Michael A. Todd

发明人： Paul P Donohue ,  Michael A. Todd

IPC分类号： G01J1/02 ,  B23K26/00 ,  B23K101/40 ,  G01J5/02 ,  G01J5/34 ,  H01L21/268 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/14 ,  H01L31/18 ,  H01L37/00 ,  H01L37/02 ,  H01L41/22 ,  H01L21/00 ,  C23C16/00 ,  H01L29/76

CPC分类号： H01L37/02 ,  H01L21/31691 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： A method and apparatus for annealing an integrated ferroelectric device (10) is disclosed in which the device (10) comprises a first layer of material capable of existing in a ferroelectric state and a second layer of material defining an integrated circuit below the first layer such as a microbridge thermal detector. The method comprises producing a pulse of energy, extending the pulse temporally using a pulse extender (200) and illuminating the first layer with the extended pulse. The duration and wavelength and fluence of the extended pulse are selected so that the material of the first layer is annealed into a ferroelectric state without exceeding the temperature budget of the integrated circuit. Application of the method in heating other articles which comprise a layer to be heated and a temperature sensitive layer is also disclosed. By extending the temporal width of the pulse, energy is supplied at a rate which ensures a more even heating of the first layer without damaging the temperature sensitive layer over time.

摘要翻译： 公开了一种用于退火集成铁电体元件（10）的方法和装置，其中器件（10）包括能够存在于铁电状态的第一材料层和限定第一层下面的集成电路的第二材料层， 作为微桥热探测器。 该方法包括产生能量脉冲，使用脉冲扩展器（200）暂时延长脉冲并用延长的脉冲照射第一层。 选择扩展脉冲的持续时间和波长和能量密度，使得第一层的材料退火成铁电状态，而不超过集成电路的温度预算。 还公开了该方法在加热包括被加热层和温度敏感层的其它制品中的应用。 通过延长脉冲的时间宽度，以能够确保更均匀地加热第一层而不会随着时间而损坏温度敏感层的速率来供给能量。

公开(公告)号：US06657358B2

公开(公告)日：2003-12-02

申请号：US09892251

申请日：2001-06-26

申请人： Frederick A. Perner

发明人： Frederick A. Perner

IPC分类号： H02N100

CPC分类号： H01L37/02

摘要： A regulated power supply includes a pyroelectric capacitor. Such a power supply can be incorporated into an integrated circuit.

公开(公告)号：US06635495B2

公开(公告)日：2003-10-21

申请号：US09866881

申请日：2001-05-30

申请人： Kazuhiko Hashimoto ,  Tomonori Mukaigawa ,  Ryuichi Kubo ,  Hiroyuki Kishihara ,  Minoru Noda ,  Masanori Okuyama

发明人： Kazuhiko Hashimoto ,  Tomonori Mukaigawa ,  Ryuichi Kubo ,  Hiroyuki Kishihara ,  Minoru Noda ,  Masanori Okuyama

IPC分类号： H01L2100

CPC分类号： H01L37/02 ,  G01J5/34 ,  H01L27/16

摘要： An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

公开(公告)号：US20020130263A1

公开(公告)日：2002-09-19

申请号：US10097405

申请日：2002-03-15

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Takashi Kawakubo ,  Kazuhide Abe ,  Kenya Sano

IPC分类号： H01L037/00

CPC分类号： H01L37/02

摘要： The present invention provides an infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 nullm having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectioally oriented layer. Distortion of the single-crystalline layer or a unidirectioally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge is changed by changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5. The amount of the charge is detected from the first and the second electrode layer 4, 6. With the infrared detection element, an accurate temperature measurement is possible even in the neighborhood of the Curie temperature due to a discontinuous primary phase transition.

摘要翻译： 本发明提供一种红外线检测元件，其具有厚度为50nm〜10μm的具有主面的单晶基底层3，形成在单晶基底层3的主面上的第一电极层4， 形成在第一电极层4上并由单晶层或单向取向层构成的铁电体层5。 在与单晶基底层3的主表面平行的表面中的单晶层或单向取向层的失真由单晶基底层3弹性约束。红外线检测元件还具有第二电极层 形成在铁电层5上的电荷量。通过红外光照射到铁电层5引起的温度变化，电荷量发生变化。从第一和第二电极层4,6检测电荷量。 红外线检测元件，由于不连续的初级相变，即使在居里温度附近也可以进行准确的温度测量。

公开(公告)号：US06399946B1

公开(公告)日：2002-06-04

申请号：US09547894

申请日：2000-04-12

申请人： Philip Charles Danby Hobbs

发明人： Philip Charles Danby Hobbs

IPC分类号： H01L3700

CPC分类号： H01L37/02

摘要： A method for constructing a thin-film infrared photodetector includes providing a thin film including ferroelectric polymer, and applying at least one electrically conductive coating to the polymer so that the coating is nonuniform in surface conductivity to thereby provide an area of higher surface resistance connected to an output region by an area of lower surface resistance.

摘要翻译： 构成薄膜红外光电检测器的方法包括提供包含铁电聚合物的薄膜，并向聚合物施加至少一种导电涂层，使得涂层的表面电导率不均匀，从而提供与 输出区域由下表面电阻的面积。

公开(公告)号：US06323580B1

公开(公告)日：2001-11-27

申请号：US09301188

申请日：1999-04-28

申请人： Jonathan J. Bernstein

发明人： Jonathan J. Bernstein

IPC分类号： H01L4108

CPC分类号： H01L41/0973 ,  H01L27/20 ,  H01L37/02 ,  H01L41/047

摘要： An interdigitated electrode ferroic transducer includes a film of ferroic material electrically polarized substantially in the plane of the film; and a set of interdigitated electrodes including at least two electrodes spaced from one another on the same side of the film and disposed at the termini of the polarization field.

摘要翻译： 交叉电极铁电转换器包括基本上在膜的平面中电极化的铁材料膜; 以及一组交错电极，其包括在膜的同一侧上彼此间隔开的至少两个电极，并设置在极化场的末端。

公开(公告)号：US6034374A

公开(公告)日：2000-03-07

申请号：US967532

申请日：1997-11-10

申请人： Mitsuteru Kimura ,  Kenji Udagawa

发明人： Mitsuteru Kimura ,  Kenji Udagawa

IPC分类号： G01J1/02 ,  G01J5/02 ,  G01J5/20 ,  H01L37/02 ,  H01L27/144

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/20 ,  H01L37/02

摘要： Thermal infrared sensors are disclosed for the detection of an incident infrared flux. The sensors include an absorber each including an absorption layer and a thermal sensing element. The incident infrared flux is absorbed by the absorption layer. Heat generated by the absorption is detected by the thermal sensing element such as a thermistor. The absorber is supported above a substrate by supports and bridges, reducing heat transfer from the absorber to the substrate. The supports and bridges include electrical connections to the absorber and the substrate. The supports and bridges are located beneath the absorber so that a large proportion of the area of the absorber is available to absorb the incident flux. Imaging devices including arrays of such sensors and fabrication methods for the sensors and imaging devices are also disclosed.

摘要翻译： 公开了用于检测入射红外线通量的热红外传感器。 传感器包括吸收体，每个吸收体包括吸收层和热感测元件。 入射的红外线通量被吸收层吸收。 由吸收产生的热量由热敏元件如热敏电阻检测。 吸收器通过支撑和桥支撑在衬底上方，减少从吸收体到衬底的热传递。 支撑件和桥梁包括与吸收器和基板的电连接。 支撑件和桥梁位于吸收器下面，使得吸收器的大部分区域可用于吸收入射通量。 还公开了包括这种传感器的阵列和用于传感器和成像装置的制造方法的成像装置。

公开(公告)号：US5949071A

公开(公告)日：1999-09-07

申请号：US912949

申请日：1997-08-14

申请人： Judith A. Ruffner ,  Jeff A. Bullington ,  Paul G. Clem ,  William L. Warren ,  C. Jeffrey Brinker ,  Bruce A. Tuttle ,  Robert W. Schwartz

发明人： Judith A. Ruffner ,  Jeff A. Bullington ,  Paul G. Clem ,  William L. Warren ,  C. Jeffrey Brinker ,  Bruce A. Tuttle ,  Robert W. Schwartz

IPC分类号： G01J1/02 ,  G01J5/20 ,  G01J5/34 ,  G01J5/48 ,  H01L37/02 ,  H01L23/14

CPC分类号： G01J5/20 ,  G01J5/34 ,  H01L37/02

摘要： A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

摘要翻译： 一种单片红外检测器结构，其允许将热电薄膜集成在低热导率气凝胶薄膜的顶部。 该结构从底部到顶部包括基底，气凝胶绝缘层，下部电极，热电层以及被黑化层覆盖的上部电极层。 气凝胶可以提供小于空气的导热性，同时为热电薄膜像素阵列提供了更强大的单片替代悬臂或悬浮气隙结构。 沉积在这些结构上的Pb（Zr0.4Ti0.6）O3薄膜显示出可行的热电性质，同时在550℃下加工。

公开(公告)号：US5891512A

公开(公告)日：1999-04-06

申请号：US919233

申请日：1997-08-28

申请人： Satoshi Kawata ,  Masaji Dohi ,  Yoichiro Sakachi ,  Hiroshi Daiku

发明人： Satoshi Kawata ,  Masaji Dohi ,  Yoichiro Sakachi ,  Hiroshi Daiku

IPC分类号： G01J1/02 ,  G01J5/34 ,  H01L37/02 ,  B05D5/12

CPC分类号： H01L37/02 ,  G01J5/34

摘要： A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

摘要翻译： 热电材料的前体溶液，例如 BaSrTiO3涂覆在具有对应于要形成在其上的红外线传感器元件的台面阵列的硅晶片的表面上，并且将热电材料前体涂层干燥，然后进行热处理以将其转化为热电薄膜 （溶胶 - 凝胶法）。 通过重复该过程形成的厚度为1μm的热电薄膜的内部应力集中在台面之间的区域（凹槽）中，因此在与应力有关的膜中产生的裂纹在区域内部分被限制 台面上的电影可以摆脱裂缝。 选择性地去除槽中的热电薄膜。 提供了包括具有均匀特性和高可靠性的传感器元件的红外图像感测装置。

公开(公告)号：US5866238A

公开(公告)日：1999-02-02

申请号：US811301

申请日：1997-03-04

申请人： Ryoichi Takayama ,  Yoshihiro Tomita ,  Satoru Fujii ,  Masayuki Okano ,  Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa

发明人： Ryoichi Takayama ,  Yoshihiro Tomita ,  Satoru Fujii ,  Masayuki Okano ,  Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa

IPC分类号： H01L37/02 ,  H01L41/24 ,  B32B3/00

CPC分类号： H01L37/02 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A first ferroelectric thin film device is provided with a first substrate consisting of polycrystal, amorphous material or metal material and a first ferroelectric thin film formed on the first substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 70.times.10.sup.-7 /.degree.C. or more. At least 75% of crystal axes of the first ferroelectric thin film are oriented in -direction. A second ferroelectric thin film device is provided with a second substrate consisting of amorphous material and a second ferroelectric thin film formed on the second substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 50.times.10.sup.-7 /.degree.C. or less. At least 75% of crystal axes of the second ferroelectric thin film are oriented in direction.

摘要翻译： 第一铁电薄膜器件设置有由多晶，非晶材料或金属材料组成的第一衬底和形成在第一衬底上的第一铁电薄膜。 从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为70×10 -7 /℃以上。 第一铁电薄膜的至少75％的晶轴取向为<001>方向。 第二铁电薄膜器件设置有由非晶材料构成的第二衬底和形成在第二衬底上的第二铁电薄膜。 从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为50×10 -7 /℃以下。 第二铁电薄膜的至少75％的晶轴取向为<100>方向。