公开(公告)号：US20070051297A1

公开(公告)日：2007-03-08

申请号：US11536517

申请日：2006-09-28

申请人： Katsuhiko Kemmochi ,  Yasuo Ohama

发明人： Katsuhiko Kemmochi ,  Yasuo Ohama

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C03B19/095 ,  C30B15/10 ,  Y10S65/08 ,  Y10T117/10 ,  Y10T117/1068

摘要： A silica glass crucible includes a thin barium-doped inner layer, a stable, bubble-free intermediate layer, and a stable opaque outer layer. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica. The crucible demonstrates reduced bubble growth during a Czochralski process. As a result of the thin barium-doped layer and the reduced bubble growth, the inner surface of the crucible is uniformly minimally textured during a CZ process. The present crucible is especially suited for intense CZ processes for manufacturing silicon ingots used for solar cells or with silicon that is heavily doped with antimony, boron, or arsenic.

摘要翻译： 石英玻璃坩埚包括薄的钡掺杂内层，稳定的无气泡中间层和稳定的不透明外层。 本发明的融合方法控制熔融前沿处的动态气体平衡，其中形成的晶粒被熔化成致密的熔融二氧化硅。 坩埚在切克劳斯基（Czochralski）工艺中表现出减少的气泡生长。 由于薄的钡掺杂层和减少的气泡生长，坩埚的内表面在CZ工艺期间均匀地最小化。 本坩埚特别适用于制造用于太阳能电池的硅锭或重掺杂锑，硼或砷的硅的强CZ工艺。

公开(公告)号：US20070022942A1

公开(公告)日：2007-02-01

申请号：US11352814

申请日：2006-02-13

申请人： Hyon-Jong Cho

发明人： Hyon-Jong Cho

IPC分类号： H01L21/322 ,  C30B21/06 ,  C30B15/00 ,  C30B13/00 ,  C30B21/04 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B28/08

CPC分类号： C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.

摘要翻译： 本发明涉及一种通过切克劳斯（Czochralski）方法生产高质量Si单晶锭的技术。 本发明的技术可以控制与固 - 液界面区不同的氧溶解区的磁场强度，以便将氧浓度控制在所需值。

公开(公告)号：US20070012243A1

公开(公告)日：2007-01-18

申请号：US11180162

申请日：2005-07-13

申请人： Olivia Webb

发明人： Olivia Webb

IPC分类号： C30B27/02 ,  C30B15/00 ,  C30B21/06 ,  C30B28/10 ,  C30B30/04

CPC分类号： B01L9/50 ,  B01L3/04 ,  B25B9/00 ,  B25B9/02 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： An apparatus for holding a crucible or other item is provided. The apparatus includes a first support member having a straight portion with two ends. A second support member having a shaped portion is connected to one of the ends of the first support member, wherein the shape of the shaped portion accommodates the crucible or other item. A support material covers the second support member, wherein the support material increases the coefficient of friction between the crucible or other item and the second support member. A spring is coupled to the other end of the first support member, and a third support member is coupled to the spring and configured so as to apply a force to the crucible or other item when the crucible or other item is placed in the shaped portion of the second support member. The third support member can be moved by exerting a force opposite to that applied by the spring so as to allow the crucible or other item to be placed in the shaped portion of the second support member, and when the exerted force is removed, the third support member is placed in contact with the crucible or other item by the spring force, such as to hold the crucible without exceeding the amount of force that would break the crucible or other item.

公开(公告)号：US07160386B2

公开(公告)日：2007-01-09

申请号：US10487286

申请日：2002-09-27

申请人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

发明人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

IPC分类号： C30B13/02

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

摘要翻译： 单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制， 公开了该方法。 通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。 通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。 此外，调节上侧加热装置（9a）和下侧加热装置（9b）产生的热量之间的比例以改变处理条件。 在调节中，由下侧加热装置（9b）产生的热量控制在相当大的比例。 不需要高成本和大尺寸的制造装置，可以控制单晶半导体的轴向氧浓度分布，单晶半导体的直径以及轴向氧浓度的微小波动。

公开(公告)号：US20060283381A1

公开(公告)日：2006-12-21

申请号：US11328099

申请日：2006-01-10

申请人： Wataru Sugimura ,  Toshiaki Ono ,  Masataka Hourai

发明人： Wataru Sugimura ,  Toshiaki Ono ,  Masataka Hourai

IPC分类号： C30B11/00

CPC分类号： C30B15/00 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a buffer tank for mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas and for holding the hydrogen mixed gas.

摘要翻译： 该半导体单晶的制造装置包括：坩埚; 加热器 坩埚驱动单元; 用于容纳坩埚和加热器的室; 以及氢混合气体供给装置，其向所述室供给包含惰性气体的氢混合气体，所述氢混合气体与含有氢原子的含氢气体混合，其中所述氢混合气体供给装置包括：含氢气体供给单元; 惰性气体供应单元; 含氢气体流量控制器; 惰性气体流量控制器; 以及用于将含氢气体和惰性气体混合在一起以形成氢混合气体并用于保持氢气混合气体的缓冲罐。

公开(公告)号：US20060254498A1

公开(公告)日：2006-11-16

申请号：US11487669

申请日：2006-07-17

申请人： Martin Weber ,  Wilfried von Ammon ,  Herbert Schmidt ,  Janis Virbulis ,  Yuri Gelfgat ,  Leonid Gorbunov

发明人： Martin Weber ,  Wilfried von Ammon ,  Herbert Schmidt ,  Janis Virbulis ,  Yuri Gelfgat ,  Leonid Gorbunov

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10S117/917 ,  Y10T117/1068

摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.

摘要翻译： 在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。 根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。

公开(公告)号：US20060236919A1

公开(公告)日：2006-10-26

申请号：US10568186

申请日：2004-08-13

申请人： Izumi Fusegawa ,  Nobuaki Mitamuria ,  Takahiro Yanagimachi

发明人： Izumi Fusegawa ,  Nobuaki Mitamuria ,  Takahiro Yanagimachi

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B15/20 ,  C30B29/06 ,  Y10T117/1068

摘要： The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide cylinder 4, wherein when a single crystal within N region outside OSF region generated in a ring shape in the radial direction of the single crystal is pulled, the single crystal within N region is pulled in a condition that flow amount of the inert gas between the single crystal and the gas flow-guide cylinder is 0.6 D(L/min) or more and pressure in the chamber is 0.6 D(hPa) or less, in which D (mm) is a diameter of the single crystal to be pulled. It is preferable that there is used the gas flow-guide cylinder that Fe concentration is 0.05 ppm or less, at least, in a surface thereof. Thereby, there is provided a method for producing a single crystal, wherein in the case that a single crystal is produced by an apparatus having a gas flow-guide cylinder in accordance with CZ method, the single crystal has low defect density and Fe concentration can be suppressed to be 1×1010 atoms/cm3 or less even in a peripheral part thereof.

摘要翻译： 本发明是一种根据切克劳斯基法制造单晶的方法，该方法是使惰性气体在单晶拉制装置11的室1中向下流动，并围绕从原料熔体2拉出的单晶3与气体 流动引导圆筒4，其中当拉伸在单晶体的径向方向上以环形产生的OSF区域外的N区域内的单晶时，N区域内的单晶在惰性流动量的条件下被拉 单晶和气体导流筒之间的气体为0.6D（L / min）以上，室内的压力为0.6D（hPa）以下，其中D（mm）为单晶直径 被拉。 至少在其表面中优选使用气体导向气缸Fe浓度为0.05ppm以下。 因此，提供了一种单晶的制造方法，其中，在通过具有根据CZ法的气体导向圆筒的装置制造单晶的情况下，单晶具有低缺陷密度，Fe浓度可以 即使在其周边部分被抑制为1×10 10原子/ cm 3以下。

公开(公告)号：US20060213424A1

公开(公告)日：2006-09-28

申请号：US11386855

申请日：2006-03-22

申请人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

发明人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B31/14 ,  C30B25/12 ,  C30B29/06 ,  C30B33/02 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

摘要翻译： 不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1.10×13×10 4原子/ cm 3， / SUP>，氧浓度为5.2.10±17.5×10 17原子/ cm 3，中心厚度BMD密度为3.10 直线滑移的累积长度<= 3cm，面积滑移区域的累积面积<= 7 在DNN通道中，前表面具有≥0.33μmLSE的氮诱发缺陷，至少5μm厚的层，其中<= 1.10×4 大于>0.09μm的COPs / cm 3> 3，并且不含BMD的层>5μm厚。 这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。 对于每个保持器，选择最大加热速率以避免形成滑动。

公开(公告)号：US07077905B2

公开(公告)日：2006-07-18

申请号：US10633487

申请日：2003-08-04

申请人： Makoto Shimosaka ,  Sunao Abe

发明人： Makoto Shimosaka ,  Sunao Abe

IPC分类号： C30B15/14

CPC分类号： C30B29/06 ,  C30B15/14 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： An apparatus for pulling the single crystal has a radiation shield. The apparatus can improve the ratio of single crystallization, even if the radiation shield is made of graphite base material and covered with silicon carbide. The apparatus can be manufactured by low cost and can improve heat insulating characteristic. The apparatus does not generate cracks by heat stress even in a large size. In the apparatus for Czochralski method having the radiation shield, the radiation shield is formed of graphite base material covered with silicon carbide. An inside corner of a curvature formed on the base material is formed of a curved surface.

摘要翻译： 用于拉动单晶的装置具有辐射屏蔽。 即使辐射屏蔽是由石墨基材制成并被碳化硅覆盖，该装置可以提高单结晶的比例。 该设备可以以低成本制造并且可以提高绝热特性。 该装置即使在大尺寸下也不会由于热应力而产生裂纹。 在具有辐射屏蔽的Czochralski方法的装置中，辐射屏蔽由覆盖有碳化硅的石墨基材形成。 形成在基材上的曲率的内角由弯曲表面形成。

公开(公告)号：US20060137599A1

公开(公告)日：2006-06-29

申请号：US11285750

申请日：2005-11-22

申请人： Hyon-Jong Cho

发明人： Hyon-Jong Cho

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B13/00 ,  C30B27/02 ,  C30B21/04 ,  C30B28/08 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/203 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1088

摘要： Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.

摘要翻译： 公开了以高生长速率制造高质量硅单晶的方法。 该方法通过Czochralski法从硅熔体生长硅单晶，其中根据以下条件生长硅单晶：硅熔体具有根据等式确定的轴向温度梯度{（ΔTmax-ΔTmin）/ΔTmin}×100 < 10，其中当沿着平行于硅单晶的径向的轴测量轴向温度梯度时，DeltaTmax是硅熔体的最大轴向温度梯度，DeltaTmin是硅熔体的最小轴向温度梯度。