Etchant compositions
    56.
    发明授权

    公开(公告)号:US12074034B2

    公开(公告)日:2024-08-27

    申请号:US17480844

    申请日:2021-09-21

    申请人: Entegris, Inc.

    发明人: Chia-Jung Hsu

    摘要: Provided are compositions and methods for selectively etching hard mask layers and/or photoresist etch residues relative to low-k dielectric layers that are present. More specifically, the present invention relates to a composition and process for selectively etching titanium nitride and/or photoresist etch residues relative to low-k dielectric layers. Other materials that may be present on the microelectronic device should not be substantially removed or corroded by said compositions.