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    Magnetoresistive Stack and Method of Fabricating Same
    61.
    发明申请
    Magnetoresistive Stack and Method of Fabricating Same 审中-公开

    公开(公告)号：US20170125670A1

    公开(公告)日：2017-05-04

    申请号：US15400889

    申请日：2017-01-06

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

    ECC WORD CONFIGURATION FOR SYSTEM-LEVEL ECC COMPATIBILITY
    63.
    发明申请
    ECC WORD CONFIGURATION FOR SYSTEM-LEVEL ECC COMPATIBILITY 审中-公开

    公开(公告)号：US20170104498A1

    公开(公告)日：2017-04-13

    申请号：US15385130

    申请日：2016-12-20

    Applicant: Everspin Technologies, Inc.

    Inventor： Syed M. Alam ,  Thomas Andre

    IPC: H03M13/29 ,  G06F11/10

    CPC classification number: H03M13/2906 ,  G06F11/1012 ,  G06F11/1076

    Abstract: In some examples, a memory device includes memory arrays configured to store pages of data organized into multiple ECC words. The memory device also includes at least one input/output pad for each ECC word associated with a page, such that a first level of error correction may be performed by the memory device on each of the ECC words associated with a page and a second level of error correction may be performed on the data output by each of the input/output pads during a particular period of time. Each of the one or more input/output pads of the memory device may be configured to provide only one bit of data per ECC word to an external source during an access from an external source.

    BIPOLAR CHOPPING FOR 1/F NOISE AND OFFSET REDUCTION IN MAGNETIC FIELD SENSORS
    64.
    发明申请
    BIPOLAR CHOPPING FOR 1/F NOISE AND OFFSET REDUCTION IN MAGNETIC FIELD SENSORS 审中-公开
    用于磁场传感器1 / F噪声和偏移减少的双极振荡

    公开(公告)号：US20170074948A1

    公开(公告)日：2017-03-16

    申请号：US15344149

    申请日：2016-11-04

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Bradley Neal ENGEL ,  Phillip G. MATHER

    IPC: G01R33/00 ,  G01R33/09

    CPC classification number: G01R33/0029 ,  G01R33/06 ,  G01R33/09 ,  G01R33/098

    Abstract: A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor comprises a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor has an output comprising a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor.

    Abstract translation: 实现斩波技术和相关联的结构以消除隧道磁阻（TMR）场传感器中的磁1 / f噪声贡献。 TMR场传感器包括包括用于感测磁场的多个TMR元件的第一桥接电路和用于施加与每个TMR元件相邻的双极电流脉冲的第二电路。 电流线串联或顺序连接到电流源以接收双极电流脉冲。 场传感器具有响应于双极性脉冲的包括高输出和低输出的输出。 这种不对称响应允许在场传感器中进行1 / f降噪的斩波技术。

    Magnetoresistive structure having two dielectric layers, and method of manufacturing same
    66.
    发明授权
    Magnetoresistive structure having two dielectric layers, and method of manufacturing same 有权
    具有两个电介质层的磁阻结构及其制造方法

    公开(公告)号：US09548442B2

    公开(公告)日：2017-01-17

    申请号：US14797172

    申请日：2015-07-12

    Applicant: Everspin Technologies, Inc.

    Inventor： Sanjeev Aggarwal ,  Kerry Nagel ,  Jason Janesky

    IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least an encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.

    Abstract translation: 具有两个电介质层的磁阻结构及其制造方法包括位于两个电介质层之间的自由磁性层。 制造方法包括至少两个蚀刻工艺和至少一个介于其间的封装工艺，其中在蚀刻工艺之间形成在部分形成的磁阻堆叠的侧壁上的封装。

    Bipolar chopping for 1/F noise and offset reduction in magnetic field sensors
    68.
    发明授权
    Bipolar chopping for 1/F noise and offset reduction in magnetic field sensors 有权
    双极斩波用于1 / F噪声和磁场传感器的偏移减少

    公开(公告)号：US09519034B2

    公开(公告)日：2016-12-13

    申请号：US14495753

    申请日：2014-09-24

    Applicant: Everspin Technologies, Inc.

    Inventor： Bradley Neal Engel ,  Phillip G. Mather

    IPC: G01R33/09 ,  G01R33/00 ,  G01R33/06

    CPC classification number: G01R33/0029 ,  G01R33/06 ,  G01R33/09 ,  G01R33/098

    Abstract: A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor includes a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor provides a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor.

    Abstract translation: 实现斩波技术和相关联的结构以消除隧道磁阻（TMR）场传感器中的磁1 / f噪声贡献。 TMR场传感器包括包括用于感测磁场的多个TMR元件的第一桥接电路和用于施加与每个TMR元件相邻的双极电流脉冲的第二电路。 电流线串联或顺序连接到电流源以接收双极电流脉冲。 场传感器响应于双极性脉冲提供高输出和低输出。 这种不对称响应允许在场传感器中进行1 / f降噪的斩波技术。

    Method of writing to a spin torque magnetic random access memory
    69.
    发明授权
    Method of writing to a spin torque magnetic random access memory 有权
    写入自旋转矩磁随机存取存储器的方法

    公开(公告)号：US09502093B2

    公开(公告)日：2016-11-22

    申请号：US15167758

    申请日：2016-05-27

    Applicant: Everspin Technologies, Inc.

    Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

    IPC: G11C11/00 ,  G11C11/16

    CPC classification number: G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

    Abstract: A spin-torque magnetoresistive memory includes array read circuits and array write circuits coupled to an array of magnetic bits. The array read circuits sample magnetic bits in the array, apply a write current pulse to the magnetic bits to set them to a first logic state, resample the magnetic bits using an additional offset current, and compare the results of sampling and resampling to determine the bit state for each magnetic bit. For each of the magnetic bits in the page having the second logic state, the array write circuits initiate a write-back, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit to the second state. A read or write operation may be received after initiation of the write-back where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time.

    Abstract translation: 自旋转矩磁阻存储器包括耦合到磁头阵列的阵列读取电路和阵列写入电路。 阵列读取电路对阵列中的磁头进行采样，向磁头施加写入电流脉冲以将其设置为第一逻辑状态，使用附加的偏移电流对磁性位进行重新采样，并比较采样和重采样的结果，以确定 每个磁头的位状态。 对于具有第二逻辑状态的页面中的每个磁性位，阵列写入电路启动回写，其中写回包括施加与第一写入电流脉冲相比具有相反极性的第二写入电流脉冲以设置 磁头到第二个状态。 在写回开始之后可以接收读取或写入操作，其中在写入操作的情况下可以中止一部分位的写回。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。

    MAGNETIC FIELD SENSOR WITH 3-AXES SELF TEST
    70.
    发明申请
    MAGNETIC FIELD SENSOR WITH 3-AXES SELF TEST 有权
    具有3轴自检功能的磁场传感器

    公开(公告)号：US20160320462A1

    公开(公告)日：2016-11-03

    申请号：US15140137

    申请日：2016-04-27

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Phillip G. MATHER ,  Anuraag MOHAN ,  Guido DE SANDRE

    IPC: G01R33/09 ,  G01R33/02 ,  G01R33/00

    CPC classification number: G01R33/098 ,  G01R33/0011 ,  G01R33/0023 ,  G01R33/0206

    Abstract: A magnetic field sensor is disclosed with built-in self-test coils in a configuration to provide magnetic field stimulation along three axes, with a high field factor, and thus, reduce a power budget of the sensor and physical size of the self-test coils. The magnetic field sensor comprises a first bridge circuit including a plurality of sense elements configured to sense a magnetic field. The magnetic field sensor further comprises re-configurable self-test current lines coupled to a self-test source to perform high field, high power wafer and die level testing and trim, as well as low power in-situ characterization and calibration of the sensor. The self-test current lines may be routed to form a coil with multiple turns around the TMR elements.

    Abstract translation: 公开了一种磁场传感器，其具有内置自检线圈，其构造为沿着三个轴提供磁场刺激，具有高场因子，从而降低传感器的功率预算和自检的物理尺寸 线圈 磁场传感器包括第一桥接电路，其包括被配置为感测磁场的多个感测元件。 磁场传感器还包括耦合到自检源的可重新配置的自检电流线，以执行高场，高功率晶片和管芯级测试和修整，以及传感器的低功率原位表征和校准 。 自测电流线可以被路由以形成围绕TMR元件的多个匝的线圈。

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