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519 条记录 (耗时 0.023 秒)

    THERMAL SPRAY SLURRY
    62.
    发明申请
    THERMAL SPRAY SLURRY 审中-公开

    公开(公告)号：US20180273767A1

    公开(公告)日：2018-09-27

    申请号：US15923862

    申请日：2018-03-16

    申请人： FUJIMI INCORPORATED

    发明人： Takaya MASUDA ,  Hiroyuki IBE ,  Kazuya SUGIMURA

    IPC分类号： C09D1/00 ,  C23C4/11 ,  C23C4/134 ,  C01F17/00

    CPC分类号： C09D1/00 ,  C01F17/0043 ,  C23C4/11 ,  C23C4/134

    摘要： Provided is thermal spray slurry capable of forming a dense coating by thermal spraying while suppressing cracks. Thermal spray slurry includes thermal spray particles and a dispersion medium in which these thermal spray particles are dispersed. These thermal spray particles have the cumulative frequency of the particle diameter of 13.2 μm in the volume-based cumulative particle diameter distribution that is 95% or more, and the cumulative frequency of the particle diameter of 0.51 μm that is 8% or less.

    Polishing composition
    63.
    发明授权
    Polishing composition 有权

    公开(公告)号：US10059860B2

    公开(公告)日：2018-08-28

    申请号：US15120605

    申请日：2015-01-20

    申请人： FUJIMI INCORPORATED

    发明人： Akihito Yasui

    IPC分类号： C09G1/02 ,  B24B37/04 ,  H01L21/321 ,  C09K3/14 ,  C23F3/00

    CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/3212

    摘要： The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished.

    POLISHING COMPOSITION
    64.
    发明申请
    POLISHING COMPOSITION 审中-公开

    公开(公告)号：US20180057711A1

    公开(公告)日：2018-03-01

    申请号：US15562692

    申请日：2016-03-11

    申请人： FUJIMI INCORPORATED

    发明人： Shogo ONISHI ,  Takeki SATO ,  Yukinobu YOSHIZAKI ,  Koichi SAKABE

    IPC分类号： C09G1/02 ,  B24B37/04 ,  H01L21/3105

    CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/31053

    摘要： An object of the present invention is to provide a polishing composition which can sufficiently improve a polishing speed of an object to be polished having a silicon-oxygen bond such as a silicon oxide film or a polishing speed of an object to be polished having a silicon-nitrogen bond such as a silicon nitride film.Providing a polishing composition including: (1) an organic compound which has an action site interacting with an object to be polished having a silicon-oxygen bond or a silicon-nitrogen bond and an acceleration site accelerating an access of a component polishing an object to be polished to the object to be polished; (2) abrasive grains; and (3) a dispersing medium.

    POLISHING COMPOSITION
    65.
    发明申请
    POLISHING COMPOSITION 审中-公开

    公开(公告)号：US20180022959A1

    公开(公告)日：2018-01-25

    申请号：US15549503

    申请日：2016-02-04

    申请人： FUJIMI INCORPORATED

    发明人： YOSHIHIRO IZAWA

    IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/768 ,  B24B37/04 ,  H01L21/321

    摘要： The present invention provides a polishing composition capable of polishing a simple substance of silicon at a higher polishing speed.The present invention is a polishing composition which is used for polishing a polishing object containing a simple substance of silicon and a silicon-containing compound other than the simple substance of silicon, the polishing composition including: abrasive grains; and a dispersing medium, wherein the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm2 but 2.0/nm2 or less.

    POLISHING COMPOSITION
    69.
    发明申请
    POLISHING COMPOSITION 审中-公开

    公开(公告)号：US20170342304A1

    公开(公告)日：2017-11-30

    申请号：US15544425

    申请日：2016-01-19

    申请人： FUJIMI INCORPORATED

    发明人： Keiji ASHITAKA ,  Shogo TSUBOTA

    IPC分类号： C09K3/14 ,  B24B37/04 ,  C09G1/02 ,  H01L21/3105

    摘要： To provide a technique with which in a case where sulfonic acid-modified aqueous anionic sol is used as abrasive grain, in a polishing composition for polishing an object to be polished that contains SiN, the stability of the SiN polishing rate with time can be improved, and the content of hydrogen peroxide can be decreased.In a polishing composition having a pH of 6 or less, sulfonic acid-modified colloidal silica obtained by immobilizing sulfonic acid on surfaces of silica particles, and water are allowed to be contained, at this time, as the sulfonic acid-modified colloidal silica, the one derived from sulfonic acid-modified aqueous anionic silica sol produced by a production method including a first reaction step of obtaining a reactant by heating raw colloidal silica having a number distribution ratio of 10% or less of microparticles having a particle diameter of 40% or less relative to a volume average particle diameter based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope in the presence of a silane coupling agent having a functional group chemically convertible to a sulfonic acid group; and a second reaction step of converting the functional group to a sulfonic acid group by treating the reactant is used.