Abstract:
A solid state lighting device including a light source capable of emitting white light including a blue spectral component and having a deficiency in a spectral region, and an optical component that is positioned to receive at least a portion of the light generated by the light source, the optical component comprising an optical material for converting at least a portion of the blue spectral component of the light to one or more predetermined wavelengths such that light emitted by the solid state lighting device includes light emission from the light source supplemented with light emission at one or more predetermined wavelengths, wherein the optical material comprises quantum confined semiconductor nanoparticles. Also disclosed is lighting fixture, a cover plate for a lighting fixture and a method.
Abstract:
A white-light emitting lighting device comprising one or more light emitting light sources (preferably solid state semiconductor light emitting diodes) that emit off-white light during operation, wherein the off-white light includes a spectral output including at least one spectral component in a first spectral region from about 360 nm to about 475 nm, at least one spectral component in a second spectral region from about 475 nm to about 575 nm, and at least one deficiency in at least one other spectral region, and an optical component that is positioned to receive at least a portion of the off-white light generated by the one or more light sources, the optical component comprising an optical material for converting at least a portion of the off-white light to one or more predetermined wavelengths, at least one of which has a wavelength in at least one deficient spectral region, such that light emitted by the lighting device comprises white light, wherein the optical material comprises quantum confined semiconductor nanoparticles. Also disclosed is an optical component, lighting fixture, a cover plate for a lighting fixture, and methods.
Abstract:
A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein.
Abstract:
Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.
Abstract translation:公开了具有改进性能的发光装置和显示器。 发光装置包括设置在第一电极和第二电极之间的发光材料。 各种实施方案包括具有至少约2.2%的峰值外部量子效率的器件; 发射具有x大于0.63的CIE色坐标的光的装置; 当以5mA / cm 2的电流密度测量时,具有至少约2.2%的外部量子效率的器件。 还公开了包括能够在激发时发射红光的多个半导体纳米晶体的发光器件,其中该器件具有至少约1.5流明/瓦特的峰值发光效率。 还公开了一种发光器件,其包括能够在激发时发射红光的多个半导体纳米晶体,其中当以5毫安/平方厘米的电流密度测量时,该器件具有至少约1.5流明/瓦特的发光效率。 还公开了一种发光器件,其包括在激发时能够发射绿光的多个半导体纳米晶体,其中该器件具有至少约1.1%的峰值外部量子效率。 还公开了包括多个半导体纳米晶体的发光器件,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约3流明/瓦的发光效率。 进一步公开的是一种发光器件,其包括能够在激发时发出绿光的多个半导体纳米晶体,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约2%的外部量子效率。 公开了其他具有改进性能的发光装置和显示器。 还公开了制备和纯化半导体纳米晶体的方法。
Abstract:
A light mixing chamber of a backlight includes a housing having a channel and a chamber exposed to the channel, an LED positioned within the chamber, and a capillary containing quantum dots positioned in the channel. A light guide plate is positioned adjacent the housing and adjacent the capillary. Relative dimensions of the elements of the light mixing chamber, as well as features added to the elements of the light mixing chamber, can be varied to balance efficiency and uniformity of light generated in the backlight.
Abstract:
Methods for making multiple hermetically sealed optical components are disclosed. Methods for making an individual hermetically sealed optical component are disclosed. An individual hermetically sealed optical component and products including same are also disclosed.
Abstract:
A coated quantum dot and methods of making coated quantum dots are provided. Products including quantum dots described herein are also disclosed.
Abstract:
A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A composition comprising a plurality of semiconductor nanocrystals wherein the solid state photoluminescence efficiency of the composition at a temperature of 90° C. or above is at least 95% of the solid state photoluminescence efficiency of the composition 25° C. is further disclosed. A method for preparing semiconductor nanocrystals comprises introducing one or more first shell chalcogenide precursors and one or more first shell metal precursors to a reaction mixture including semiconductor nanocrystal cores, wherein the first shell chalcogenide precursors are added in an amount greater than the first shell metal precursors by a factor of at least about 2 molar equivalents and reacting the first shell precursors at a first reaction temperature of at least 300° C. to form a first shell on the semiconductor nanocrystal cores. Populations, compositions, components and other products including semiconductor nanocrystals of the invention are disclosed. Populations, compositions, components and other products including semiconductor nanocrystals made in accordance with any method of the invention is also disclosed.
Abstract:
A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation. In a further embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation.
Abstract:
A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein.