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    Multiple mode RF power converter
    61.
    发明授权
    Multiple mode RF power converter 有权

    公开(公告)号：US09377797B2

    公开(公告)日：2016-06-28

    申请号：US14702192

    申请日：2015-05-01

    Applicant: RF Micro Devices, Inc.

    Inventor： Michael R. Kay ,  Nadim Khlat

    IPC: G05F1/00 ,  G05F1/46

    CPC classification number: G05F1/468 ,  H02M1/10 ,  H02M2001/0067 ,  H03F1/0211 ,  H03F1/0227 ,  H03F1/26 ,  H03F3/24 ,  H03F2200/351 ,  H03F2200/451 ,  H03F2200/504 ,  H04B15/005

    Abstract: This disclosure relates to radio frequency (RF) power converters and methods of operating the same. In one embodiment, an RF power converter includes an RF switching converter, a low-drop out (LDO) regulation circuit, and an RF filter. The RF filter is coupled to receive a pulsed output voltage from the RF switching converter and a supply voltage from the LDO regulation circuit. The RF filter is operable to alternate between a first RF filter topology and a second RF filter topology. In the first RF filter topology, the RF filter is configured to convert the pulsed output voltage from a switching circuit into the supply voltage. The RF filter in the second RF filter topology is configured to filter the supply voltage from the LDO regulation circuit to reduce a ripple variation in a supply voltage level of the supply voltage. As such, the RF filter provides greater versatility.

    ANTENNA ON A DEVICE ASSEMBLY
    62.
    发明申请
    ANTENNA ON A DEVICE ASSEMBLY 审中-公开
    设备装配天线

    公开(公告)号：US20160134014A1

    公开(公告)日：2016-05-12

    申请号：US14933552

    申请日：2015-11-05

    Applicant: RF Micro Devices, Inc.

    Inventor： Alexander Wayne Hietala ,  Julio C. Costa

    IPC: H01Q1/52 ,  H01Q3/28 ,  H01Q3/30 ,  H01Q19/10 ,  H01Q3/44

    Abstract: Aspects disclosed in the detailed description include an antenna on a device assembly. A device assembly includes a silicon device layer having at least one antenna. The device assembly also includes a polymer substrate that is formed with insulating material that does not interfere with the at least one antenna in the silicon device layer. As a result, it is unnecessary to shield the at least one antenna from the polymer substrate, thus allowing radio frequency (RF) signals radiating from the at least one antenna to pass through the polymer substrate.

    Abstract translation: 详细描述中公开的方面包括设备组件上的天线。 一种器件组件包括具有至少一个天线的硅器件层。 所述器件组件还包括聚合物衬底，所述聚合物衬底由不与硅器件层中的至少一个天线干涉的绝缘材料形成。 结果，不需要从聚合物基板屏蔽至少一个天线，从而允许从至少一个天线辐射的射频（RF）信号通过聚合物基板。

    SEMICONDUCTOR RESONATORS WITH REDUCED SUBSTRATE LOSSES
    63.
    发明申请
    SEMICONDUCTOR RESONATORS WITH REDUCED SUBSTRATE LOSSES 有权
    具有减少衬底损耗的半导体谐振器

    公开(公告)号：US20160126925A1

    公开(公告)日：2016-05-05

    申请号：US14931621

    申请日：2015-11-03

    Applicant: RF Micro Devices, Inc.

    Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

    IPC: H03H9/24 ,  H01L49/02 ,  H01L21/027

    CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H01L21/0276 ,  H01L28/10 ,  H01P7/06 ,  H01P7/065 ,  H01P7/08 ,  H03H7/38 ,  H03H7/463 ,  H03H9/24 ,  H04B1/40 ,  H04J1/08

    Abstract: A resonator includes a laminate, an inductive element on the laminate, and a semiconductor die attached to the inductive element and the laminate. The semiconductor die includes a substrate and a device layout area. The device layout area is separated into a number of device layout sub-areas, each of which has an area between about 1.0 μm2 and 100.0 μm2. By limiting the area of each one of the device layout sub-areas with the charge carrier trap trenches, the total area of the semiconductor die prone to inducement of eddy currents (i.e., the layer of accumulated charge at the interface of the substrate and the device layout area) is reduced, which in turn reduces interference with the magnetic field of the inductive element and thus improves the performance of the resonator.

    Abstract translation: 谐振器包括层叠体，层压体上的感应元件以及附接到电感元件和层压体的半导体芯片。 半导体管芯包括衬底和器件布局区域。 设备布局区域被分成多个设备布局子区域，每个区域具有在约1.0μm2和100.0μm2之间的面积。 通过利用电荷载流子阱沟槽限制每个器件布局子区域的面积，半导体管芯的总面积容易引起涡流（即，衬底和界面的界面处的累积电荷层 器件布局面积）减小，这又减小了与感应元件的磁场的干扰，从而提高了谐振器的性能。

    MULTIPLEXERS USING WEAKLY-COUPLED NETWORKS IN RF FRONT END CIRCUITRY
    64.
    发明申请
    MULTIPLEXERS USING WEAKLY-COUPLED NETWORKS IN RF FRONT END CIRCUITRY 有权
    在RF前端电路中使用弱耦合网络的多路复用器

    公开(公告)号：US20160126922A1

    公开(公告)日：2016-05-05

    申请号：US14927546

    申请日：2015-10-30

    Applicant: RF Micro Devices, Inc.

    Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

    IPC: H03H7/46 ,  H03H7/38

    CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H03H7/38 ,  H03H7/463 ,  H04B1/40 ,  H04J1/08

    Abstract: Multiplexing circuitry is disclosed that includes filtering circuitry, which provides a first transfer function between a common port and a first port and a second transfer function between the common port and a second port. The first transfer function and second transfer function provide a first passband and a second passband, respectively. The first transfer function also has a stopband provided within the second passband of the second transfer function due to the filtering circuitry including a first parallel resonant circuit provided in series in a first filter path being weakly coupled to a second parallel resonant provided in shunt with respect to a second filter path. The weak coupling between the first parallel resonant circuit and the second parallel resonant circuit thus naturally provides a stopband in the first transfer function within the second passband of the second transfer function.

    Abstract translation: 公开了包括滤波电路的多路复用电路，该滤波电路在公共端口和第一端口之间提供第一传输功能，以及在公共端口和第二端口之间提供第二传输功能。 第一传递函数和第二传递函数分别提供第一通带和第二通带。 第一传递函数还具有提供在第二传递函数的第二通带内的阻带，因为滤波电路包括串联设置在第一滤波器路径中的第一并联谐振电路，该第一并联谐振电路与第二并联谐振弱耦合， 到第二过滤路径。 因此，第一并联谐振电路和第二并联谐振电路之间的弱耦合自然地在第二传递函数的第二通带内的第一传递函数中提供阻带。

    APPARATUS WITH 3D INDUCTORS
    65.
    发明申请
    APPARATUS WITH 3D INDUCTORS 审中-公开
    装置与3D电感器

    公开(公告)号：US20160126007A1

    公开(公告)日：2016-05-05

    申请号：US14929608

    申请日：2015-11-02

    Applicant: RF Micro Devices, Inc.

    Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Marcus Granger-Jones ,  Baker Scott

    IPC: H01F27/28 ,  H01F27/29

    CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H01L21/0276 ,  H01L28/10 ,  H01P7/06 ,  H01P7/065 ,  H01P7/08 ,  H03H7/38 ,  H03H7/463 ,  H03H9/24 ,  H04B1/40 ,  H04J1/08

    Abstract: Embodiments of an apparatus are disclosed that includes a first three dimensional (3D) inductor and a second 3D inductor. The first three dimensional (3D) inductor has a first conductive path shaped as a first two dimensional (2D) lobe laid over a first 3D volume. In addition, the second 3D inductor has a second conductive path, wherein the second 3D inductor is inserted into the first 3D inductor so that the second conductive path at least partially extends through the first 3D volume. Since second 3D inductor is inserted into the first 3D inductor, the 3D inductors may be coupled to one another. Depending on orientation and distances of structures provided by the 3D inductors, the 3D inductors may be weakly or moderately coupled.

    Abstract translation: 公开了一种包括第一三维（3D）电感器和第二3D电感器的装置的实施例。 第一三维（3D）电感器具有第一导电路径，其形状设置在第一3D体积上的第一二维（2D）波瓣。 另外，第二3D电感器具有第二导电路径，其中第二3D电感器被插入到第一3D电感器中，使得第二导电路径至少部分地延伸穿过第一3D体积。 由于第二3D电感器被插入到第一3D电感器中，所以3D电感器可以彼此耦合。 根据由3D电感器提供的结构的取向和距离，3D电感可能会弱或适度耦合。

    Power amplifier controller
    66.
    发明授权
    Power amplifier controller 有权
    功率放大器控制器

    公开(公告)号：US09325281B2

    公开(公告)日：2016-04-26

    申请号：US14067019

    申请日：2013-10-30

    Applicant: RF Micro Devices, Inc.

    Inventor： Chris Levesque ,  Kevin Wesley Kobayashi ,  Praveen Varma Nadimpalli ,  Ricke W. Clark

    IPC: H03F3/21 ,  H03F1/52 ,  H03F1/30 ,  H03F3/193 ,  H03G3/30 ,  H03F3/72

    CPC classification number: H03F3/21 ,  H03F1/305 ,  H03F1/523 ,  H03F3/193 ,  H03F3/72 ,  H03F2200/18 ,  H03F2200/468 ,  H03F2203/45284 ,  H03G3/3042

    Abstract: The present disclosure provides a power amplifier controller for starting up, operating, and shutting down a power amplifier. The power amplifier controller includes current sense amplifier circuitry adapted to monitor a main current of the power amplifier. A bias generator is also included and adapted to provide a predetermined standby bias voltage and an operational bias voltage based upon a main current level sensed by the current sense amplifier circuitry. The power amplifier controller further includes a sequencer adapted to control startup and shutdown sequences of the power amplifier. In at least one embodiment, the power amplifier is a gallium nitride (GaN) device, and the main current level sensed is a drain current of the GaN device. Moreover, the bias generator is a gate bias generator provided that the power amplifier is a field effect transistor (FET) device.

    Abstract translation: 本公开提供了用于启动，操作和关闭功率放大器的功率放大器控制器。 功率放大器控制器包括适于监视功率放大器的主电流的电流检测放大器电路。 还包括偏置发生器并且适于基于由电流感测放大器电路感测的主电流电平提供预定待机偏置电压和操作偏置电压。 功率放大器控制器还包括适于控制功率放大器的启动和关闭序列的定序器。 在至少一个实施例中，功率放大器是氮化镓（GaN）器件，并且感测到的主电流电平是GaN器件的漏极电流。 此外，偏置发生器是栅极偏置发生器，其中功率放大器是场效应晶体管（FET）器件。

    Multi-mode power amplifier architecture
    67.
    发明授权
    Multi-mode power amplifier architecture 有权
    多模功率放大器架构

    公开(公告)号：US09319214B2

    公开(公告)日：2016-04-19

    申请号：US13887965

    申请日：2013-05-06

    Applicant: RF Micro Devices, Inc.

    Inventor： Nadim Khlat

    IPC: H04L5/18 ,  H04B1/00 ,  H04L5/14

    CPC classification number: H04L5/18 ,  H04B1/0057 ,  H04L5/14

    Abstract: Radio frequency (RF) circuitry, which includes a time division duplex (TDD)/frequency division duplex (FDD) driver stage, a TDD final stage, an FDD final stage, and power directing circuitry, is disclosed. The power directing circuitry is coupled between the TDD/FDD driver stage and the TDD final stage, and is further coupled between the TDD/FDD driver stage and the FDD final stage.

    Abstract translation: 公开了包括时分双工（TDD）/频分双工（FDD）驱动器级，TDD最终级，FDD最后级和功率定向电路的射频（RF）电路。 功率引导电路耦合在TDD / FDD驱动级和TDD最终级之间，并且进一步耦合在TDD / FDD驱动级和FDD最后级之间。

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