公开(公告)号：US12222683B2

公开(公告)日：2025-02-11

申请号：US18205268

申请日：2023-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota Tajima ,  Kensuke Yoshizumi

IPC: G04B37/14 ,  A44C5/00 ,  A44C5/14 ,  G04G17/06 ,  G04G19/00 ,  H01M50/202 ,  H01M50/569 ,  H02J7/00

Abstract: A device capable of being used for a long time is achieved. A power supply, a connection method of a power supply, or a connecting member, for easy attachment and detachment and non-detachment when in use, is provided. A power supply, a connection method of a power supply, or a connecting member for easy replacement is provided. A highly designed power supply is provided. Power from a battery is supplied to an electronic device through a connecting member including a pipe, a spring, and a pair of pivots. The pair of pivots are electrically insulated from each other, and electrically connected to any one of a pair of electrodes of the battery. The electronic device into which the pair of pivots are inserted includes a pair of bearings capable of receiving power.

公开(公告)号：US20250048909A1

公开(公告)日：2025-02-06

申请号：US18718878

申请日：2022-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi YANAGISAWA ,  Daiki NAKAMURA ,  Hiromi SAWAI ,  Ryota HODO

IPC: H10K59/88 ,  H10K59/122 ,  H10K59/80

Abstract: A display apparatus with high display quality is provided. In the display apparatus, a dummy pixel portion is a region that does not contribute to display. The dummy pixel portion is positioned adjacent to the outside of a pixel portion in a plan view. The pixel portion includes a first insulating layer, a first pixel electrode and a second pixel electrode over the first insulating layer, a first layer over the first pixel electrode, a second layer over the second pixel electrode, and a common electrode over the first layer and the second layer. The dummy pixel portion includes the first insulating layer, a first conductive layer and a second conductive layer over the first insulating layer, a third layer over the first conductive layer, a fourth layer over the second conductive layer, and the common electrode over the third layer and the fourth layer. The first insulating layer includes a first groove and a second groove. The first groove includes a first region overlapping with the first pixel electrode and a second region overlapping with the second pixel electrode. The second groove includes a third region overlapping with the first conductive layer and a fourth region overlapping with the second conductive layer.

公开(公告)号：US20250048676A1

公开(公告)日：2025-02-06

申请号：US18713288

申请日：2022-11-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Satoru SAITO ,  Hitoshi KUNITAKE ,  Shunpei YAMAZAKI ,  Masahiro WAKUDA ,  Toshiki HAMADA

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device that can be miniaturized or highly integrated and a manufacturing method thereof are provided. A semiconductor device includes a metal oxide, a first conductor and a second conductor over the metal oxide, a first insulator positioned over the metal oxide and between the first conductor and the second conductor, a second insulator over the first insulator, a third insulator over the second insulator, a third conductor over the third insulator, a fourth insulator positioned between the first conductor and the first insulator, and a fifth insulator positioned between the second conductor and the first insulator. The first insulator is in contact with the top surface and the side surface of the metal oxide, and oxygen is less likely to pass through the first insulator than the second insulator. The first conductor, the second conductor, the fourth insulator, and the fifth insulator contain the same metal element. In a cross-sectional view in a channel length direction, a distance from the first conductor to the first insulator is greater than or equal to a thickness of the first insulator and less than or equal to a distance from the third conductor to the metal oxide.

公开(公告)号：US20250046937A1

公开(公告)日：2025-02-06

申请号：US18713462

申请日：2022-11-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuhiro JINBO ,  Yosuke TSUKAMOTO ,  Kazutaka KURIKI ,  Tetsuji ISHITANI ,  Shuhei YOSHITOMI ,  Takeshi OSADA

IPC: H01M50/247 ,  H01M10/0525 ,  H01M10/42 ,  H01M10/48 ,  H01M50/238 ,  H01M50/284

Abstract: A safe charging environment with respect to a flexible battery capable of following the movement of a housing is provided. A flexible battery management system or an electronic device mounted with the flexible battery includes a sensor that senses a movement of the flexible battery and a charge control circuit having a function of starting charging or stopping charging of the flexible battery on the basis of a signal from the sensor; charging of the flexible battery is started using the charge control circuit when the sensor senses the flexible battery in a first mode where the flexible battery is opened and senses the flexible battery in a second mode where the flexible battery is curved.

公开(公告)号：US12219771B2

公开(公告)日：2025-02-04

申请号：US17621334

申请日：2020-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Onuki ,  Takanori Matsuzaki ,  Shunpei Yamazaki

IPC: H10B43/35 ,  H10B41/35

Abstract: A semiconductor device having a large storage capacity is provided. The semiconductor device includes an oxide provided over a substrate, a plurality of first conductors over the oxide, a first insulator that is provided over the plurality of first conductors and includes a plurality of openings overlapping with regions between the plurality of first conductors, a plurality of second insulators provided in the respective plurality of openings, a plurality of charge retention layers provided over the respective plurality of second insulators, a plurality of third insulators provided over the respective plurality of charge retention layers, and a plurality of second conductors provided over the respective plurality of third insulators.

公开(公告)号：US12218247B2

公开(公告)日：2025-02-04

申请号：US17606830

申请日：2020-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Ryota Hodo ,  Tetsuya Kakehata ,  Shinya Sasagawa

IPC: H01L29/786 ,  H01L21/311 ,  H01L21/321 ,  H01L21/465 ,  H01L21/66 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12 ,  H01L29/66 ,  H10B12/00 ,  H10B41/70

Abstract: A transistor with a high on-state current and a semiconductor device with high productivity are provided. Included are a first oxide, a second oxide, a third oxide, and a fourth oxide over a first insulator; a first conductor over the third oxide; a second conductor over the fourth oxide; a second insulator over the first conductor; a third insulator over the second conductor; a fifth oxide positioned over the second oxide and between the third oxide and the fourth oxide; a sixth oxide over the fifth oxide; a fourth insulator over the sixth oxide; a third conductor over the fourth insulator; and a fifth insulator over the first insulator to the third insulator. The fifth oxide includes a region in contact with the second oxide to the fourth oxide and the first insulator. The sixth oxide includes a region in contact with the fifth oxide, the first conductor, and the second conductor. The fourth insulator includes a region in contact with at least the sixth oxide, the third conductor, and the fifth insulator.

公开(公告)号：US20250040250A1

公开(公告)日：2025-01-30

申请号：US18790447

申请日：2024-07-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US12211569B2

公开(公告)日：2025-01-28

申请号：US18512287

申请日：2023-11-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Atsushi Umezaki

IPC: G11C19/18 ,  G09G3/3266 ,  G09G3/36 ,  H01L27/12 ,  H01L29/786

Abstract: A semiconductor device or the like with a novel structure that can change the orientation of the display is provided. A semiconductor device or the like with a novel structure, in which a degradation in transistor characteristics can be suppressed, is provided. A semiconductor device or the like with a novel structure, in which operation speed can be increased, is provided. A semiconductor device or the like with a novel structure, in which a dielectric breakdown of a transistor can be suppressed, is provided. The semiconductor device or the like has a circuit configuration capable of switching between a first operation and a second operation by changing the potentials of wirings. By switching between these two operations, the scan direction is easily changed. The semiconductor device is configured to change the scan direction.

公开(公告)号：US12210257B2

公开(公告)日：2025-01-28

申请号：US18415901

申请日：2024-01-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu Hosaka ,  Yukinori Shima ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1345 ,  G02F1/1362 ,  H01L27/12

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

公开(公告)号：US20250031449A1

公开(公告)日：2025-01-23

申请号：US18374877

申请日：2023-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi Umezaki

IPC: H01L27/12 ,  G02F1/133 ,  G09G3/20 ,  G09G3/3266 ,  G09G3/36 ,  G11C19/28 ,  H01L29/10 ,  H01L29/786 ,  H03K19/003

Abstract: To provide a novel shift register. Transistors 101 to 104 are provided. A first terminal of the transistor 101 is connected to a wiring 111 and a second terminal of the transistor 101 is connected to a wiring 112. A first terminal of the transistor 102 is connected to a wiring 113 and a second terminal of the transistor 102 is connected to the wiring 112. A first terminal of the transistor 103 is connected to the wiring 113 and a gate of the transistor 103 is connected to the wiring 111 or a wiring 119. A first terminal of the transistor 104 is connected to a second terminal of the transistor 103, a second terminal of the transistor 104 is connected to a gate of the transistor 101, and a gate of the transistor 104 is connected to a gate of the transistor 102.