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    Method of depositing dielectric film by modified PEALD method
    61.
    发明授权
    Method of depositing dielectric film by modified PEALD method 有权
    通过改性PEALD法沉积介电膜的方法

    公开(公告)号：US08415259B2

    公开(公告)日：2013-04-09

    申请号：US13410970

    申请日：2012-03-02

    Applicant: Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Daekyun Jeong

    Inventor： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Daekyun Jeong

    IPC: H01L21/31

    CPC classification number: C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

    Abstract: A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    Abstract translation: 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成膜的方法包括：将含氮和氢的反应气体和稀有气体引入到其中放置半导体衬底的反应空间中; 将引入小于1.0秒持续时间脉冲的前体引入反应气体和稀有气体的反应空间; 在前体关闭之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

    Method of forming conformal film having si-N bonds on high-aspect ratio pattern
    62.
    发明授权
    Method of forming conformal film having si-N bonds on high-aspect ratio pattern 有权
    在高纵横比图案上形成具有si-N键的保形膜的方法

    公开(公告)号：US08394466B2

    公开(公告)日：2013-03-12

    申请号：US12875889

    申请日：2010-09-03

    Applicant: Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    Inventor： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    IPC: H05H1/24

    CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

    Abstract: A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.

    Abstract translation: 在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度 前体 并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。

    Method of forming stress-tuned dielectric film having Si-N bonds by modified PEALD
    66.
    发明授权
    Method of forming stress-tuned dielectric film having Si-N bonds by modified PEALD 有权
    通过改性PEALD形成具有Si-N键的应力调谐电介质膜的方法

    公开(公告)号：US08334219B2

    公开(公告)日：2012-12-18

    申请号：US12832739

    申请日：2010-07-08

    Applicant: Woo-Jin Lee ,  Kuo-Wei Hong ,  Akira Shimuzu

    Inventor： Woo-Jin Lee ,  Kuo-Wei Hong ,  Akira Shimuzu

    IPC: H01L21/31

    CPC classification number: H01L21/3141 ,  C23C16/345 ,  C23C16/45538 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

    Abstract: A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate.

    Abstract translation: 通过改进的等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的应力调谐电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入到反应空间内 放置半导体衬底; 使用高频RF电源和低频RF电源将RF功率应用于反应空间; 并将脉冲中的含氢硅前体引入反应空间，其中等离子体被激发，从而在衬底上形成具有Si-N键的应力调谐电介质膜。

    Method of depositing dielectric film having Si-N bonds by modified peald method
    69.
    发明授权
    Method of depositing dielectric film having Si-N bonds by modified peald method 有权
    通过改进的peald方法沉积具有Si-N键的电介质膜的方法

    公开(公告)号：US08173554B2

    公开(公告)日：2012-05-08

    申请号：US12901323

    申请日：2010-10-08

    Applicant: Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    Inventor： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/3141

    Abstract: A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    Abstract translation: 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入到半导体衬底 被放置 将具有小于1.0秒持续时间脉冲的含氢硅前体引入引入反应气体和稀有气体的反应空间中; 在硅前驱物被切断之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

    Method of forming conformal dielectric film having Si-N bonds by PECVD
    70.
    发明授权
    Method of forming conformal dielectric film having Si-N bonds by PECVD 有权
    通过PECVD形成具有Si-N键的保形电介质膜的方法

    公开(公告)号：US08142862B2

    公开(公告)日：2012-03-27

    申请号：US12553759

    申请日：2009-09-03

    Applicant: Woo Jin Lee ,  Akira Shimizu

    Inventor： Woo Jin Lee ,  Akira Shimizu

    IPC: C23C8/00 ,  C23C16/00 ,  H05H1/24

    CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/31111

    Abstract: A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

    Abstract translation: 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

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