公开(公告)号：US20090269907A1

公开(公告)日：2009-10-29

申请号：US12499939

申请日：2009-07-09

申请人： Yutaka Takafuji ,  Takashi Itoga

发明人： Yutaka Takafuji ,  Takashi Itoga

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L24/24 ,  H01L24/26 ,  H01L24/82 ,  H01L24/83 ,  H01L27/1214 ,  H01L27/1218 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2224/24226 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04953 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/3025 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/3512 ,  H01L2924/00

摘要： On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.

摘要翻译： 在SOI衬底上形成氢离子注入部分，其中氢离子在BOX层（掩埋氧化物膜层）中分布，并形成单晶硅薄膜晶体管。 然后，该SOI衬底与绝缘衬底接合。 随后，通过进行热处理，在氢离子注入部分将SOI衬底切割，从而去除了SOI衬底的不必要部分。此外，残留在单晶硅薄膜晶体管上的BOX层通过 蚀刻。 由此，可以在不使用粘合剂的情况下从绝缘基板上的单晶硅薄膜器件进行。 此外，可以提供没有表面损伤的半导体器件，并且包括薄而均匀的单晶硅薄膜。

公开(公告)号：US07563693B2

公开(公告)日：2009-07-21

申请号：US11147359

申请日：2005-06-08

申请人： Yasumori Fukushima ,  Yutaka Takafuji

发明人： Yasumori Fukushima ,  Yutaka Takafuji

IPC分类号： H01L21/30 ,  H01L21/322

CPC分类号： H01L21/6835 ,  H01L24/97 ,  H01L2221/68363 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01054 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/30105 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor substrate comprises the steps of: forming a gate oxide film as an insulating layer on the surface of a semiconductor substrate; implanting boron ions for inhibiting the migration of a peeling substance in the semiconductor substrate to form an anti-diffusion layer in the semiconductor substrate; activating boron in the anti-diffusion layer by heat treatment; implanting hydrogen ions into the semiconductor substrate to form a peel layer in part of the semiconductor substrate at a side of the anti-diffusion layer opposite to the gate oxide film; bonding a glass substrate to the surface of the semiconductor substrate where the gate oxide film has been formed; and heat-treating the semiconductor substrate to separate part of the semiconductor substrate along the peel layer.

摘要翻译： 一种制造半导体衬底的方法包括以下步骤：在半导体衬底的表面上形成作为绝缘层的栅极氧化膜; 注入硼离子以抑制半导体衬底中的剥离物质的迁移，以在半导体衬底中形成抗扩散层; 通过热处理在反扩散层中活化硼; 将氢离子注入到半导体衬底中以在与半导体衬底相反的一侧的反扩散层的一部分半导体衬底中形成剥离层; 将玻璃基板结合到已经形成栅极氧化膜的半导体基板的表面上; 并且对半导体衬底进行热处理以沿着剥离层分离半导体衬底的一部分。

公开(公告)号：US07525530B2

公开(公告)日：2009-04-28

申请号：US11124463

申请日：2005-05-05

申请人： Yutaka Takafuji ,  Katsunori Shirai ,  Akira Shibazaki

发明人： Yutaka Takafuji ,  Katsunori Shirai ,  Akira Shibazaki

IPC分类号： G09G3/36

CPC分类号： G01R31/318533 ,  G01R31/318505 ,  G09G3/006 ,  G09G3/3648 ,  G09G3/3674 ,  G09G3/3685 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0283 ,  G09G2310/0286 ,  G09G2330/12 ,  Y10S345/904

摘要： Each of a gate driver and a source driver periodically receives a clock signal and a start pulse, where the start pulse has a certain width and is shifted as shift data in the gate driver or source driver in synchronism with the clock signal. A logic circuit composed of an NAND gate and an inverter receives the start pulse and the shift data, the shift data being the output that is supplied after a predetermined delay from the last stage with respect to the shift direction. The output of the inverter is used to test scanning circuits. This provides a display device and a scanning circuit testing method, which enable the scanning circuits to be judged both surely and quickly, without increasing the area or complexity of the circuit.

摘要翻译： 门驱动器和源极驱动器中的每一个周期性地接收时钟信号和起始脉冲，其中起始脉冲具有一定的宽度，并且与时钟信号同步地移位为栅极驱动器或源极驱动器中的移位数据。 由NAND门和反相器组成的逻辑电路接收起始脉冲和移位数据，移位数据是从相对于移位方向的最后阶段的预定延迟之后提供的输出。 逆变器的输出用于测试扫描电路。 这提供了显示装置和扫描电路测试方法，其使得能够确定地和快速地判断扫描电路，而不增加电路的面积或复杂性。

公开(公告)号：US20080164483A1

公开(公告)日：2008-07-10

申请号：US11884709

申请日：2006-03-09

申请人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Masao Moriguchi

发明人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Masao Moriguchi

IPC分类号： H01L29/06 ,  H01L21/425 ,  H01L33/00

CPC分类号： H01L27/1244 ,  G02F1/136227 ,  H01L21/2007 ,  H01L21/26506 ,  H01L27/0688 ,  H01L27/1229 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1266 ,  H01L29/7833

摘要： An active matrix substrate includes a glass substrate, a driver portion formed on the glass substrate in a protruding state, a stepped portion formed along a surface of the driver portion and a surface of the glass substrate, an insulating reentrant-angle compensating film formed on a surface of the stepped portion, for compensating for at least a part of a reentrant-angle shape of the stepped portion, and a wiring layer formed along a surface of the reentrant-angle compensating film and connected to the driver portion.

摘要翻译： 有源矩阵基板包括玻璃基板，在突出状态下形成在玻璃基板上的驱动部，沿着驱动部的表面形成的台阶部和玻璃基板的表面，形成在绝缘性折入角补偿膜上的绝缘性重入角补偿膜 所述阶梯部的表面用于补偿所述台阶部的折入角形状的至少一部分，以及沿着所述可重入角补偿膜的表面形成并连接到所述驱动部的布线层。

公开(公告)号：US20070108523A1

公开(公告)日：2007-05-17

申请号：US11646274

申请日：2006-12-28

申请人： Yasuyuki Ogawa ,  Yutaka Takafuji

发明人： Yasuyuki Ogawa ,  Yutaka Takafuji

IPC分类号： H01L27/12 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L23/544 ,  H01L24/24 ,  H01L24/26 ,  H01L24/82 ,  H01L24/83 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78654 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/24226 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/04941 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00

摘要： In a semiconductor device including a monocrystalline thin film transistor 16a that has been formed on a monocrystalline Si wafer 100 and then is transferred to a insulating substrate 2, LOCOS oxidization is performed with respect to the element-isolation region of the monocrystalline Si wafer 100 so as to create a field oxide film (SiO2 film) 104, and a marker 107 is formed on the field oxide film 104. With this structure, alignment of components may be performed based on a gate electrode 106 upon or after the transfer step.

摘要翻译： 在包括单晶硅晶片100上形成的单晶硅晶体管16a的半导体器件中，然后转移到绝缘基片2上，相对于单晶Si晶片100的元件隔离区域进行LOCOS氧化 以形成场氧化膜（SiO 2膜）104，在场氧化膜104上形成标记物107。 利用这种结构，可以在传送步骤之后或之后基于栅电极106执行部件的对准。

公开(公告)号：US07205204B2

公开(公告)日：2007-04-17

申请号：US10963817

申请日：2004-10-14

申请人： Yasuyuki Ogawa ,  Yutaka Takafuji

发明人： Yasuyuki Ogawa ,  Yutaka Takafuji

IPC分类号： H01L21/76

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L23/544 ,  H01L24/24 ,  H01L24/26 ,  H01L24/82 ,  H01L24/83 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78654 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/24226 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/04941 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00

摘要： In a semiconductor device including a monocrystalline thin film transistor 16a that has been formed on a monocrystalline Si wafer 100 and then is transferred to a insulating substrate 2, LOCOS oxidization is performed with respect to the element-isolation region of the monocrystalline Si wafer 100 so as to create a field oxide film (SiO2 film) 104, and a marker 107 is formed on the field oxide film 104. With this structure, alignment of components may be performed based on a gate electrode 106 upon or after the transfer step.

公开(公告)号：US07071912B2

公开(公告)日：2006-07-04

申请号：US10631731

申请日：2003-08-01

申请人： Hongyong Zhang ,  Yosuke Tsukamoto ,  Yutaka Takafuji ,  Yasushi Kubota

发明人： Hongyong Zhang ,  Yosuke Tsukamoto ,  Yutaka Takafuji ,  Yasushi Kubota

IPC分类号： G09G3/36

CPC分类号： G09G3/3688 ,  G09G3/3677

摘要： A display panel drive circuit and a display panel are provided which are simple in structure but free from initial failure leading to impossibility to perform scanning. The display panel drive circuit of the present invention is structured such that thin film transistors constituting a signal input circuit connected to a circuit outside the display panel are formed in a structure having a dielectric breakdown strength higher than those of thin film transistors constituting other circuits. Specifically, countermeasures are taken by transistor formation in multi-gate structure, gate width broadening, resistance insertion between an input terminal and a transistor or the like. In the present invention, the circuit to which signals are externally inputted or thin film transistors of the same circuit is structured to withstand high voltage, thereby preventing the transistors from being deteriorated by high voltage and occurrence of initial failure while being simple in structure.

公开(公告)号：US06603455B1

公开(公告)日：2003-08-05

申请号：US09176193

申请日：1998-10-21

申请人： Hongyong Zhang ,  Yosuke Tsukamoto ,  Yutaka Takafuji ,  Yasushi Kubota

发明人： Hongyong Zhang ,  Yosuke Tsukamoto ,  Yutaka Takafuji ,  Yasushi Kubota

IPC分类号： G09G336

CPC分类号： G09G3/3688 ,  G09G3/3677

摘要： A display panel drive circuit and a display panel are provided which are simple in structure but free from initial failure leading to impossibility to perform scanning. The display panel drive circuit of the present invention is structured such that thin film transistors constituting a signal input circuit connected to a circuit outside the display panel are formed in a structure having a dielectric breakdown strength higher than those of thin film transistors constituting other circuits. Specifically, countermeasures are taken by transistor formation in multi-gate structure, gate width broadening, resistance insertion between an input terminal and a transistor or the like. In the present invention, the circuit to which signals are externally inputted or thin film transistors of the same circuit is structured to withstand high voltage, thereby preventing the transistors from being deteriorated by high voltage and occurrence of initial failure while being simple in structure.

摘要翻译： 提供了一种显示面板驱动电路和显示面板，其结构简单，但没有初始故障，导致不可能执行扫描。 本发明的显示面板驱动电路被构造成使得构成与显示面板外部的电路连接的信号输入电路的薄膜晶体管形成为具有高于构成其它电路的薄膜晶体管的介电击穿强度的结构。 具体地，通过多栅极结构中的晶体管形成，栅极宽度加宽，输入端子和晶体管之间的电阻插入等来采取对策。 在本发明中，外部输入信号的电路或同一电路的薄膜晶体管被构造为承受高电压，从而防止晶体管在结构简单的同时由于高电压和初始故障的发生而劣化。

公开(公告)号：US06028580A

公开(公告)日：2000-02-22

申请号：US719442

申请日：1996-09-25

申请人： Seishi Kosegawa ,  Toshihiro Yamashita ,  Yutaka Takafuji

发明人： Seishi Kosegawa ,  Toshihiro Yamashita ,  Yutaka Takafuji

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09G3/36 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/12 ,  G02F1/136259 ,  G09G3/3688

摘要： A driving circuit integrated type active-matrix liquid crystal display device is arranged such that a buffer composed of a P-channel thin film transistor and an N-channel thin film transistor that are connected in series is adopted for the P-channel thin film transistor and an N-channel thin film transistor; at least one of the P-channel thin film transistor and the N-channel thin film transistor is composed of a plurality of thin film transistors that are connected in parallel; and at least one of a power source line and an output line connected to the plurality of thin film transistors connected in parallel is formed in a wiring pattern composed of a main wiring section and a branched wiring section branched into respective thin film transistors. The described arrangement permits a line-shaped defect due to a defective thin film transistor which constitutes a buffer of the drive circuit to be eliminated with ease, while improving a yield of panels.

摘要翻译： 驱动电路集成型有源矩阵液晶显示装置被布置为使得由P沟道薄膜晶体管和N沟道薄膜晶体管组成的缓冲器串联连接的P沟道薄膜晶体管 和N沟道薄膜晶体管; P沟道薄膜晶体管和N沟道薄膜晶体管中的至少一个由并联连接的多个薄膜晶体管构成; 并且连接到并联连接的多个薄膜晶体管的电源线和输出线中的至少一个形成在由主配线部分和分支成各个薄膜晶体管的分支布线部分组成的布线图案中。 所述布置允许由于构成驱动电路的缓冲器的缺陷薄膜晶体管而容易地消除的线状缺陷，同时提高了面板的产量。

公开(公告)号：US5576730A

公开(公告)日：1996-11-19

申请号：US43384

申请日：1993-04-06

申请人： Takayuki Shimada ,  Toshihiro Yamashita ,  Yutaka Takafuji

发明人： Takayuki Shimada ,  Toshihiro Yamashita ,  Yutaka Takafuji

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1345 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/00 ,  G09G3/36 ,  G01R31/28

CPC分类号： G09G3/006 ,  G09G3/3648 ,  G09G3/3688 ,  Y10S345/904

摘要： An active matrix substrate including an external signal supplying circuit for externally supplying the video signals to the data lines. The external signal supplying circuit includes a data line connection section connected to the data lines; an inspection signal inputting section and an inspection signal outputting section both connected to the data line connection section; and a switching device for electrically connecting the inspection signal inputting section or the inspection signal outputting section to the data line connection section. After the active matrix substrate is subjected to an electrical inspection, a short ring is formed for electrically connecting an inspection signal inputting terminal provided with an inspection signal inputting section, an inspection signal outputting terminal provided with an inspection signal outputting section, a first terminal provided with a gate driving circuit, a second terminal provided with a source driving circuit, and the data line connection section, in a case when the active matrix substrate is judged to have no defect; and then the short ring is removed after an alignment treatment of a display medium.

摘要翻译： 一种有源矩阵基板，包括用于向数据线外部供应视频信号的外部信号提供电路。 外部信号提供电路包括连接到数据线的数据线连接部分; 检测信号输入部和检查信号输出部，两者都连接到数据线连接部; 以及用于将检查信号输入部分或检查信号输出部分电连接到数据线连接部分的切换装置。 在有源矩阵基板进行电气检查之后，形成短环，用于将设置有检查信号输入部的检查信号输入端子，设置有检查信号输出部的检查信号输出端子，提供的第一端子 在有源矩阵基板被判断为没有缺陷的情况下，具有栅极驱动电路，设置有源极驱动电路的第二端子和数据线连接部， 然后在显示介质的取向处理之后移除短环。