公开(公告)号：US20100116535A1

公开(公告)日：2010-05-13

申请号：US12656102

申请日：2010-01-15

申请人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

发明人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC分类号： H05K1/16

CPC分类号： H01L27/016

摘要： A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer that is not used to form a passive element, and an upper conductor layer used to form the passive element. The upper and lower conductor layers include respective lead electrode portions that have respective end faces located at the side surfaces of the device main body. At the side surfaces of the device main body, the end face of the lead electrode portion of the lower conductor layer and the end face of the lead electrode portion of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch these end faces and are thereby connected to the upper and lower conductor layers.

摘要翻译： 薄膜器件包括器件主体和四个端子电极。 装置主体具有四个侧面。 端子电极被设置成接触侧表面的相应部分。 器件主体包括不用于形成无源元件的下导体层和用于形成无源元件的上导体层。 上下导体层包括各自的引线电极部分，其各自的端面位于装置主体的侧表面。 在装置主体的侧面，下导体层的引线电极部分的端面和上导体层的引线电极部分的端面彼此电气和物理地连接。 端子电极接触这些端面，从而连接到上导体层和下导体层。

公开(公告)号：US07649251B2

公开(公告)日：2010-01-19

申请号：US11701361

申请日：2007-02-02

申请人： Hajime Kuwajima ,  Masahiro Itoh ,  Masahiro Miyazaki ,  Akira Furuya

发明人： Hajime Kuwajima ,  Masahiro Itoh ,  Masahiro Miyazaki ,  Akira Furuya

IPC分类号： H01L23/48

CPC分类号： H03H7/0123 ,  H01F17/0006 ,  H01F27/40 ,  H01L2924/0002 ,  H03H7/1708 ,  H03H7/1775 ,  H01L2924/00

摘要： A thin-film device incorporates: a substrate; an insulating layer, a plurality of lower conductor layers, a dielectric film, an insulating layer, a plurality of upper conductor layers and a protection film that are stacked in this order on the substrate; and a plurality of terminal electrodes. One of the terminal electrodes is connected to one of the lower conductor layers. The one of the lower conductor layers has a protruding portion that protrudes to extend more outward in a lateral direction than a side surface of the insulating layer. The one of the terminal electrodes has a concave portion that accommodates and touches at least part of the protruding portion, and touches the side surface of the insulating layer.

摘要翻译： 薄膜器件包括：衬底; 绝缘层，多个下导体层，电介质膜，绝缘层，多个上导体层和保护膜，依次层叠在基板上; 和多个端子电极。 一个端子电极连接到一个下导体层。 下导体层之一具有突出部分，该突出部分在横向方向上比绝缘层的侧表面更向外延伸。 端子电极中的一个具有容纳和接触突出部分的至少一部分的凹部，并且与绝缘层的侧表面接触。

公开(公告)号：US07560372B2

公开(公告)日：2009-07-14

申请号：US11525943

申请日：2006-09-25

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Kaoru Mikagi ,  Akira Furuya ,  Tetsuya Tao

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Kaoru Mikagi ,  Akira Furuya ,  Tetsuya Tao

IPC分类号： H01L23/485 ,  H01L23/488

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03019 ,  H01L2224/035 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05561 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552

摘要： An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

摘要翻译： 通过用有机酸处理表面，在铜膜的表面上形成凹凸后，用草酸清洗形成在电极焊盘的铜膜表面上的氧化膜。 由此，通过使探针与电极焊盘接触进行特性检查时，获得稳定的电阻，并且通过用显微镜观察容易地识别出探针与电极焊盘接触。 此外，相对于焊料的润湿性是令人满意的，并且可以有利地在电极焊盘上形成焊料凸块。

公开(公告)号：US20090159039A1

公开(公告)日：2009-06-25

申请号：US12314932

申请日：2008-12-18

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： F02M35/02 ,  B01D46/48

CPC分类号： F02M35/024 ,  B01D46/06 ,  B01D46/10 ,  B01D46/48 ,  B01D46/521 ,  B01D50/002 ,  F02M35/08 ,  Y10S55/28

摘要： A tubular channel is disposed in a path of air that flows from an inlet to a dirty side. The cross sectional area of the tubular channel is smaller than the cross-sectional area of the inlet. A dust outlet is disposed in a wall in a path of the air that flows out of the exit of the tubular channels to the dirty side. The dust outlet extends through the wall of the air cleaner from the inside to the outside. As the air blasts out of the dust outlet, dust in the air cleaner is discharged to the outside.

摘要翻译： 管状通道设置在从入口流向脏侧的空气路径中。 管状通道的横截面面积小于入口的横截面面积。 灰尘出口设置在从管状通道的出口流出到空气的空气的路径中的壁中。 灰尘出口从内向外延伸穿过空气净化器的壁。 当空气从出口出来时，空气滤清器中的灰尘排放到外面。

公开(公告)号：US20080206899A1

公开(公告)日：2008-08-28

申请号：US12068816

申请日：2008-02-12

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： H01L21/66 ,  B05C11/10 ,  C25D17/00 ,  C25D7/12

CPC分类号： H01L22/14 ,  C23C4/12 ,  C23C26/00 ,  C25D5/02 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12

摘要： A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.

摘要翻译： 一种制造半导体器件的方法包括测量设​​置有凹部的半导体衬底的表面的反射率，并确定表示对应于所测量的反射率的沉积条件的沉积参数。 然后，在对应于沉积参数的条件下，在半导体衬底上形成金属膜。

公开(公告)号：US20070240672A1

公开(公告)日：2007-10-18

申请号：US11730047

申请日：2007-03-29

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： F02B75/22 ,  F02F7/00 ,  F02F1/10

CPC分类号： F02F7/0021

摘要： A crankcase of an engine having a crankshaft therein comprises a skirt part formed in the circumferential direction of the crankshaft and a stiffening rib provided on a wall surface of the skirt part as inclined at a predetermined degree angle to the axis of the crankshaft.

摘要翻译： 具有曲轴的发动机的曲轴箱包括沿曲轴的圆周方向形成的裙部和设置在裙部的壁面上的加强肋，该加强肋以与曲轴的轴线成预定角度倾斜。

公开(公告)号：US20070194404A1

公开(公告)日：2007-08-23

申请号：US11701458

申请日：2007-02-02

申请人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya ,  Masahiro Itoh

发明人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya ,  Masahiro Itoh

IPC分类号： H01L29/00

CPC分类号： H01L27/016 ,  H01L27/12

摘要： A thin-film device incorporates: a substrate; an insulating layer, a lower conductor layer, a dielectric film, an insulating layer, an upper conductor layer and a protection film that are stacked in this order on the substrate; and four terminal electrodes. The four terminal electrodes touch part of end faces of the upper conductor layer, and part of the top surface of the upper conductor layer contiguous to the end faces. The protection film has four concave portions, each of which has a shape that is recessed inward from the edge of the protection film except portions thereof corresponding to these concave portions. The four concave portions expose respective portions of the top surface of the upper conductor layer that touch the four terminal electrodes. The four concave portions accommodate respective portions of the four terminal electrodes.

摘要翻译： 薄膜器件包括：衬底; 绝缘层，下导体层，电介质膜，绝缘层，上导体层和保护膜，其依次层叠在基板上; 和四个端子电极。 四个端子电极接触上导体层的端面的一部分，并且上导体层的顶表面的与端面相邻的部分。 保护膜具有四个凹部，每个凹部具有从除了与这些凹部对应的部分之外的保护膜的边缘向内凹陷的形状。 四个凹部露出接触四个端子电极的上部导体层的上表面的各个部分。 四个凹部容纳四个端子电极的各部分。

公开(公告)号：US20070190341A1

公开(公告)日：2007-08-16

申请号：US11704950

申请日：2007-02-12

申请人： Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

发明人： Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

IPC分类号： C25D5/02 ,  B32B13/04

CPC分类号： C25D3/38 ,  C25D5/50 ,  C25D7/123 ,  C25D15/00 ,  H01L21/2885 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883

摘要： An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

摘要翻译： 在包含铜膜的耦合结构中实现了改进的SIV电阻和改进的EM电阻。 半导体器件包括：半导体衬底; 形成在所述半导体衬底上或之上的第二绝缘层; 第二阻挡金属膜，形成在所述第二绝缘膜上，并且能够防止铜扩散到所述第二绝缘膜中; 以及形成在所述第二阻挡金属膜上以与所述第二阻挡金属膜接触并且含有铜和碳的导电膜，其中所述第二导电膜中沿着沉积方向的碳浓度的分布包括第一 峰值和第二高峰。

公开(公告)号：US20070120130A1

公开(公告)日：2007-05-31

申请号：US11588321

申请日：2006-10-27

申请人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

发明人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC分类号： H01L33/00

CPC分类号： H01L28/40

摘要： A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer disposed on the flattening film; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The thickness of the dielectric film falls within a range of 0.02 to 1 μm inclusive and is smaller than the thickness of the lower conductor layer. The surface roughness in maximum height of the top surface of the flattening film is smaller than that of the top surface of the substrate and equal to or smaller than the thickness of the dielectric film. The surface roughness in maximum height of the top surface of the lower conductor layer is equal to or smaller than the thickness of the dielectric film.

摘要翻译： 薄膜器件包括：衬底; 由绝缘材料制成并设置在基板上的扁平薄膜; 以及设置在平坦化膜上的电容器。 电容器包括：设置在平坦化膜上的下导体层; 设置在下导体层上的电介质膜; 以及设置在电介质膜上的上导体层。 电介质膜的厚度在0.02〜1μm的范围内，小于下导体层的厚度。 平坦化膜的上表面的最大高度的表面粗糙度小于衬底顶表面的表面粗糙度，等于或小于电介质膜的厚度。 下导体层的上表面的最大高度的表面粗糙度等于或小于电介质膜的厚度。

公开(公告)号：US20070080463A1

公开(公告)日：2007-04-12

申请号：US11540599

申请日：2006-10-02

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： H01L23/48

CPC分类号： H01L21/76849 ,  H01L21/76822 ,  H01L21/76834 ,  H01L21/76867 ,  H01L21/76886 ,  H01L21/76888

摘要： A semiconductor device includes a semiconductor substrate, a lower insulating film formed on the semiconductor substrate, an interconnect-forming metal film provided so as to fill a recess formed in the surficial portion of the lower insulating film, and containing copper as a major constituent, an upper insulating film formed on the lower insulating film, and a metal-containing layer formed between the lower insulating film and the upper insulating film, and containing a metal different from copper. The metal-containing layer includes a first region in contact with the interconnect-forming metal film, and a second region in contact with the lower insulating film, and having a composition different from that of the first region, and contains substantially no nitrogen at least in the first region.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的下绝缘膜，设置成填充形成在下绝缘膜的表面部分中的凹部并且以铜为主要成分的互连形成金属膜， 形成在下绝缘膜上的上绝缘膜和形成在下绝缘膜和上绝缘膜之间并含有不同于铜的金属的含金属层。 含金属层包括与互连形成金属膜接触的第一区域和与下绝缘膜接触的第二区域，并且具有与第一区域不同的组成，并且至少基本上不含氮 在第一个地区。