公开(公告)号：US11821070B2

公开(公告)日：2023-11-21

申请号：US17095444

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Muthukumar Kaliappan ,  Jeffrey W. Anthis ,  Michael Haverty

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/18

CPC classification number: C23C16/40 ,  C23C16/18 ,  C23C16/45534 ,  C23C16/45553

Abstract: Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.

公开(公告)号：US11643721B2

公开(公告)日：2023-05-09

申请号：US16129232

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US11293093B2

公开(公告)日：2022-04-05

申请号：US15863203

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Feng Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US11094544B2

公开(公告)日：2021-08-17

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20210140041A1

公开(公告)日：2021-05-13

申请号：US17095444

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Muthukumar Kaliappan ,  Jeffrey W. Anthis ,  Michael Haverty

IPC: C23C16/40 ,  C23C16/18 ,  C23C16/455

Abstract: Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.

公开(公告)号：US20210123136A1

公开(公告)日：2021-04-29

申请号：US17084184

申请日：2020-10-29

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Liqi Wu ,  Pratham Jain ,  Jeffrey W. Anthis ,  Mark Saly ,  Mei Chang ,  David Thompson

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34 ,  C23C16/56

Abstract: The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

公开(公告)号：US20210066592A1

公开(公告)日：2021-03-04

申请号：US17000457

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Nasrin Kazem ,  Jeffrey W. Anthis ,  Ghazal Saheli ,  David Thompson

IPC: H01L45/00 ,  H01L27/24

Abstract: Methods of depositing a metal-organic oxide film by exposing a substrate surface to a metal-organic precursor and an oxidant are described. The metal-organic oxide film has the general formula MOxCy, wherein M comprises one or more of a transition metal, a lanthanide, or a boron group element, x is a whole number in a range of 1 to 6, and y is a number in a range of greater than 0 to 0.5.

公开(公告)号：US10410865B2

公开(公告)日：2019-09-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20190256467A1

公开(公告)日：2019-08-22

申请号：US16400269

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07D213/38 ,  C07F7/00 ,  C07D207/335 ,  C07F1/00 ,  C07C211/13 ,  C07C211/54 ,  C23C16/18 ,  C07F15/00 ,  C07F1/08 ,  C07F5/02 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  C23C16/455 ,  C07D213/36 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

公开(公告)号：US10233547B2

公开(公告)日：2019-03-19

申请号：US15899234

申请日：2018-02-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  C30B33/12 ,  C23F4/00 ,  H01J37/32

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.