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254 条记录 (耗时 0.043 秒)

    A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS
    61.
    发明授权
    A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS 有权
    A-SITE-AND /或B-SITE修饰的PBZRTIO3材料和（PB，SR，CA，BA，MG）（ZR，TI，NB，TA）O3薄膜在电磁随机存取存储器和高性能薄膜微处理器中的应用

    公开(公告)号：US06692569B2

    公开(公告)日：2004-02-17

    申请号：US09939906

    申请日：2001-08-27

    申请人： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    发明人： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    IPC分类号： C30B2504

    CPC分类号： H01L41/187 ,  C30B25/02 ,  C30B29/32

    摘要： A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

    摘要翻译： 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿晶体材料包括晶格A位点和B位，其中至少一个通过存在选自以下的取代基进行修饰：（i）A位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 钙钛矿晶体薄膜材料可以通过从薄膜的金属组分的金属有机前体的液体输送MOCVD形成，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非挥发性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。

    Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
    62.
    发明授权
    Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films 有权
    用于钛酸盐，镧系元素和钽酸盐介电膜的原子层沉积和化学气相沉积的前体组合物

    公开(公告)号：US08784936B2

    公开(公告)日：2014-07-22

    申请号：US13370072

    申请日：2012-02-09

    申请人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C23C16/00

    CPC分类号： C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地 选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同 并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布 材料制造闪存等微电子器件。

    Super-dry reagent compositions for formation of ultra low k films
    63.
    发明授权
    Super-dry reagent compositions for formation of ultra low k films 有权
    用于形成超低k膜的超干试剂组合物

    公开(公告)号：US08053375B1

    公开(公告)日：2011-11-08

    申请号：US11925838

    申请日：2007-10-27

    申请人： Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Steven M. Bilodeau ,  Scott Battle ,  William Hunks ,  Tianniu Chen

    发明人： Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Steven M. Bilodeau ,  Scott Battle ,  William Hunks ,  Tianniu Chen

    IPC分类号： H01L21/00 ,  C07F7/08 ,  C07C7/00

    CPC分类号： H01L21/02274 ,  C09D183/04 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203

    摘要： An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/or the porogen has a water content below 10 ppm, based on total weight of the porogen. In one implementation, the precursor silane is diethoxymethylsilane, and the porogen is bicyclo[2.2.1]-hepta-2,5-diene having a trace water content below 10 ppm, based on total weight of said bicyclo[2.2.1]-hepta-2,5-diene. These super-dry reagents are unexpectedly polymerization-resistant during their delivery and deposition in the formation of ultra low k films, and are advantageously employed to produce ultra low k films of superior character.

    摘要翻译： 一种超低k电介质膜，包括由前体硅烷和致孔剂形成的含有致孔剂的孔隙率的硅膜，其中前体硅烷的含水量基于前体硅烷的总重量低于10ppm，和 /或致孔剂的含水量基于致孔剂的总重量低于10ppm。 在一个实施方案中，前体硅烷是二乙氧基甲基硅烷，并且致孔剂是基于所述双环[2.2.1] - 二甲基甲硅烷基的总重量的具有痕量水含量低于10ppm的双环[2.2.1] - 庚-2,5-二烯。 庚-2,5-二烯。 这些超级干燥试剂在它们的输送和沉积期间在超低k膜的形成期间出人意料地具有抗聚合性，并且有利地用于生产优异特性的超低k膜。

    Liquid delivery MOCVD process for deposition of high frequency dielectric materials
    70.
    发明授权
    Liquid delivery MOCVD process for deposition of high frequency dielectric materials 有权
    用于沉积高频电介质材料的液体输送MOCVD工艺

    公开(公告)号：US06277436B1

    公开(公告)日：2001-08-21

    申请号：US09216673

    申请日：1998-12-18

    申请人： Gregory T. Stauf ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Gregory T. Stauf ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C23C1640

    CPC分类号： H01L28/55 ,  C23C16/40 ,  C23C16/4481 ,  H01L21/31691 ,  H01L27/10852

    摘要： A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N2O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400° C. to about 1200° C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors.

    摘要翻译： 用于沉积诸如（Ba，Sr）钛酸盐和（Zr，Sn）钛酸盐的电介质材料的液体输送MOCVD方法，其中金属源化合物溶解或悬浮在溶剂中并在约100℃的温度下闪蒸至 约300℃，并通过诸如氩气，氮气，氦气，氨等的载气进入化学气相沉积反应器，其中前体蒸气与氧气，臭氧，N 2 O等氧化性共反应气体混合 等等，以在约0.1托至约760托的化学气相沉积室压力下在约400℃至约1200℃的温度下将高介电金属氧化物膜沉积在基底上。 这种方法可以例如用于形成（Ba，Sr）钛酸盐电介质材料，其中氧化物的总金属含量的至少60原子％为钛。 本发明的高介电材料可用于形成用于例如动态随机存取存储器和高频电容器的应用的电容微电子器件结构。