公开(公告)号：US20080149596A1

公开(公告)日：2008-06-26

申请号：US11641670

申请日：2006-12-20

申请人： Rajinder Dhindsa ,  Jerrel K. Antolik ,  Scott Stevenot

发明人： Rajinder Dhindsa ,  Jerrel K. Antolik ,  Scott Stevenot

IPC分类号： C23F1/00 ,  C23C16/513 ,  C23F1/08 ,  B05C11/00

CPC分类号： C23C16/455 ,  C23C16/4417 ,  C23C16/45517 ,  C23C16/45536 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/3299 ,  H01L21/3065

摘要： Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.

摘要翻译： 提供了用于控制在等离子体处理装置中形成的等离子体的流动电导的装置，其包括与下电极相对的上电极，以在其间形成间隙。 下电极适于支撑衬底并耦合到RF电源。 注入到间隙中的过程气体在操作期间被激发成等离子体状态。 该装置包括同心地围绕下电极并具有形成在其中的一组槽的接地环，以及用于控制通过槽的气流的机构。

公开(公告)号：US20080090417A1

公开(公告)日：2008-04-17

申请号：US11639264

申请日：2006-12-15

申请人： Anthony De La Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Jason Augustino ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty

发明人： Anthony De La Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Jason Augustino ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty

IPC分类号： H05H1/24 ,  C23F1/00 ,  H01L21/302

CPC分类号： H01J37/32449 ,  H01J37/32009 ,  H01J37/32541 ,  H01J37/3255

摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.

摘要翻译： 等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。 为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。 由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。 剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

公开(公告)号：US20080020574A1

公开(公告)日：2008-01-24

申请号：US11487999

申请日：2006-07-18

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

IPC分类号： C23F1/00 ,  H01L21/302 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J2237/03

摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

摘要翻译： 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

公开(公告)号：US20070193688A1

公开(公告)日：2007-08-23

申请号：US11359300

申请日：2006-02-21

申请人： Rajinder Dhindsa ,  Mukund Srinivasan

发明人： Rajinder Dhindsa ,  Mukund Srinivasan

IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/302 ,  C23C16/00

CPC分类号： H01L21/67069 ,  C23C16/45521 ,  C23C16/4585 ,  H01J37/3244 ,  H01L21/68735

摘要： Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In one embodiment, a plasma processing chamber comprises a substrate support configured to receive a substrate, and a plurality of tuning gas injection holes surrounding the edge of the substrate, wherein the tuning gas injection holes supplies a tuning gas to the edge of the substrate during plasma processing of the substrate.

摘要翻译： 一般来说，本发明的实施例提供了改进的等离子体处理机构，装置和方法，以增加基板的非常边缘处的工艺均匀性。 在一个实施例中，等离子体处理室包括被配置为接收衬底的衬底支撑件和围绕衬底边缘的多个调谐气体注入孔，其中调谐气体注入孔在衬底的边缘提供调谐气体 基板的等离子体处理。

公开(公告)号：US20050264218A1

公开(公告)日：2005-12-01

申请号：US10855706

申请日：2004-05-28

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

IPC分类号： H01J37/32 ,  H01J7/24

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/3299

摘要： A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.

摘要翻译： 处理工件的等离子体处理器包括频率为2MHz，27MHz和60MHz的源，由三个匹配网络施加到包括工件的真空室中的电极。 或者通过第四匹配网络将60MHz施加到第二电极。 基本上调谐到驱动它们的源的频率的匹配网络包括串联电感，因此2MHz电感超过27MHz网络电感，并且27MHz网络电感超过60MHz网络的电感。 匹配网络衰减至少26 DB的驱动它们的源的频率。 27和60 MHz信号源之间的并联电感将2 MHz与27 MHz和60 MHz信号源分离。 串联谐振电路（谐振到约5 MHz）分流2 MHz网络和电极，以帮助将2 MHz源极与电极相匹配。

公开(公告)号：US06391787B1

公开(公告)日：2002-05-21

申请号：US09689845

申请日：2000-10-13

申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Aaron Eppler ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Aaron Eppler ,  Eric Lenz

IPC分类号： H01L2120

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  Y10T156/10

摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

公开(公告)号：US6123775A

公开(公告)日：2000-09-26

申请号：US343482

申请日：1999-06-30

申请人： Fangli Hao ,  Rajinder Dhindsa ,  Javad Pourhashemi

发明人： Fangli Hao ,  Rajinder Dhindsa ,  Javad Pourhashemi

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00 ,  C23F1/02

CPC分类号： C23C16/45572 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67103

摘要： A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

摘要翻译： 用于等离子体反应室的部件包括诸如温度控制的支撑构件的散热器和诸如电动喷头电极的加热构件。 淋浴头电极周边地固定到支撑构件上以将气体分配室封闭在电极的顶表面和支撑构件的底表面之间。 传热构件在电极和支撑构件之间延伸并且将热量从喷淋头电极的顶表面上的温度积分区域传递到支撑构件的底表面，以便控制喷头电极两端的温度分布。

公开(公告)号：US5904779A

公开(公告)日：1999-05-18

申请号：US769433

申请日：1996-12-19

申请人： Rajinder Dhindsa ,  Steven Franchuk ,  Carlos Manzanilla ,  Ken E. Tokunaga

发明人： Rajinder Dhindsa ,  Steven Franchuk ,  Carlos Manzanilla ,  Ken E. Tokunaga

IPC分类号： H01L21/68 ,  H01J37/32 ,  H01L21/683 ,  H02N13/00 ,  C23C16/00

CPC分类号： H01J37/32431 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10S156/915

摘要： A substrate lifting arrangement for use in a plasma processing chamber. The plasma processing chamber has a chuck configured for supporting a substrate during processing of the substrate within the plasma processing chamber. The substrate lilting arrangement includes at least one substrate engaging element movable between a first position in which the substrate engaging element does not engage the substrate and a second position in which the substrate engaging element engages the substrate and lifts the substrate off the chuck. The substrate lifting arrangement further includes an actuator coupled to the substrate engaging element. The actuator controls movement of the substrate engaging element between the first and second positions. There is firer included a resistance arrangement coupled to the substrate engaging element. The resistance arrangement limits a current flowing from the substrate to ground through the resistance arrangement. The current is caused by remaining electrical charges on the substrate when the substrate is lifted off the chuck by the substrate engaging element.

摘要翻译： 一种用于等离子体处理室的基板提升装置。 等离子体处理室具有卡盘，其构造成在等离子体处理室内的基板的处理期间支撑基板。 所述衬底浸渍装置包括至少一个衬底接合元件，所述至少一个衬底接合元件可在第一位置和第二位置之间移动，所述第一位置在衬底接合元件不接合所述衬底的第一位置和所述衬底接合元件接合所述衬底的第二位置， 基板提升装置还包括联接到基板接合元件的致动器。 致动器控制衬底接合元件在第一和第二位置之间的移动。 有火器包括耦合到衬底接合元件的电阻装置。 电阻布置通过电阻布置限制从衬底流到地的电流。 当基板被基板接合元件从卡盘上提起时，电流由基板上的剩余电荷引起。

公开(公告)号：US09779916B2

公开(公告)日：2017-10-03

申请号：US12872984

申请日：2010-08-31

申请人： Rajinder Dhindsa ,  Akira Koshishi ,  Alexei Maraktanov

发明人： Rajinder Dhindsa ,  Akira Koshishi ,  Alexei Maraktanov

IPC分类号： C23F1/08 ,  H01J37/32

CPC分类号： H01J37/32807 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/32642

摘要： A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.

公开(公告)号：US09536711B2

公开(公告)日：2017-01-03

申请号：US12047820

申请日：2008-03-13

申请人： Rajinder Dhindsa ,  Eric Hudson ,  Alexei Marakhtanov ,  Maryam Moravej ,  Andreas Fischer

发明人： Rajinder Dhindsa ,  Eric Hudson ,  Alexei Marakhtanov ,  Maryam Moravej ,  Andreas Fischer

IPC分类号： H01J37/32

CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32623 ,  H01J37/32697

摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.

摘要翻译： 在等离子体处理室中，提供了一种处理基板的方法。 该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合 导电耦合环耦合到LE以提供导电路径。 该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。 该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源以及 负直流电源通过RF滤波器控制等离子体处理参数。