公开(公告)号：US08860165B2

公开(公告)日：2014-10-14

申请号：US14000860

申请日：2011-12-19

申请人： Kaoru Okaniwa ,  Taku Sawaki ,  Takeshi Yamashita

发明人： Kaoru Okaniwa ,  Taku Sawaki ,  Takeshi Yamashita

IPC分类号： H01L31/0232 ,  H01L31/048 ,  H01L31/055

CPC分类号： H01L31/02322 ,  C08K5/0091 ,  C08K5/56 ,  C08L2205/18 ,  C08L2205/22 ,  C09D123/0853 ,  H01L31/0481 ,  H01L31/055 ,  Y02E10/50 ,  Y02E10/52 ,  C08L33/12

摘要： The present invention provides a wavelength conversion-type photovoltaic cell sealing material, the sealing material including at least one light emitting layer containing a group of spherical phosphors, the group of spherical phosphors having a ratio of a median value D50 of the group of spherical phosphors to a total thickness t of the light emitting layer of from 0.1 to 1.0, where the median value D50 is a median value of a volume particle size distribution of the group of spherical phosphors, and an integrated value N of a number particle size distribution from D25 to D75 of the group of spherical phosphors being 5% or more, when D25 is a particle size value at 25% of an integrated value of the volume particle size distribution of the group of spherical phosphors and D75 is a particle size value at 75% of the integrated value of the volume particle size distribution of the group of spherical phosphors; and a photovoltaic cell module including the sealing material.

摘要翻译： 本发明提供一种波长转换型光伏电池密封材料，所述密封材料包括至少一个含有一组球形荧光体的发光层，所述球状磷光体组的一组球形荧光体的中值D50的比率 相对于发光层的总厚度t为0.1〜1.0，其中中值D50是球形荧光体组的体积粒径分布的中值，以及来自 球状磷光体组的D25〜D75为5％以上，当D25为球状荧光体组的体积粒度分布的积分值的25％时的粒度值，D75为75时的粒径值 球形荧光体组的体积粒度分布的积分值的百分比; 以及包括密封材料的光伏电池模块。

公开(公告)号：US08233823B2

公开(公告)日：2012-07-31

申请号：US12171613

申请日：2008-07-11

申请人： Tomoya Adachi ,  Takafumi Miyazaki ,  Mitsutoshi Kichise ,  Takeshi Yamashita

发明人： Tomoya Adachi ,  Takafumi Miyazaki ,  Mitsutoshi Kichise ,  Takeshi Yamashita

IPC分类号： G03G15/00

CPC分类号： G03G15/1615 ,  G03G15/161 ,  G03G2215/00151

摘要： A belt is supported by a plurality of rollers and is driven to move in a predetermined direction. A flange member is configured to make contact with a portion of an edge surface of the belt in its width direction. A pressing member presses on a surface of the belt in its thickness direction at a position near a contact portion of the belt with the flange member.

摘要翻译： 带由多个辊支撑并被驱动以在预定方向上移动。 凸缘部件构造成与带的边缘表面的宽度方向的一部分接触。 按压构件在带与凸缘构件的接触部分附近的位置处在带的表面上沿其厚度方向按压。

公开(公告)号：US08059981B2

公开(公告)日：2011-11-15

申请号：US12489907

申请日：2009-06-23

申请人： Takeshi Yamashita ,  Yoshie Tsuchida ,  Makoto Matsushita

发明人： Takeshi Yamashita ,  Yoshie Tsuchida ,  Makoto Matsushita

IPC分类号： G03G15/16

CPC分类号： G03G15/5058 ,  G03G15/0131 ,  G03G15/5054 ,  G03G2215/00059 ,  G03G2215/0132

摘要： An image forming apparatus includes an image carrier, an exposure mechanism, a latent-image forming mechanism, at least one image forming mechanism including a development mechanism to develop the latent image, an intermediate transfer member disposed to contact the image carrier, a primary transfer mechanism to transfer a toner image on the image carrier and superimpose one toner image on another on the intermediate transfer member, a secondary transfer mechanism to transfer the toner image superimposed on the intermediate transfer member onto a transfer material, an asperity detector to detect an asperity profile of a surface of the transfer material to identify a concavity of the transfer material, and a toner adhesion control mechanism to increase an amount of the toner transferred to intermediate transfer member according to the concavities in the surface of the transfer material identified by an asperity detector, after a predetermined time elapses.

摘要翻译： 图像形成装置包括图像载体，曝光机构，潜像形成机构，至少一个图像形成机构，包括显影机构以使潜像显影;中间转印部件，其设置成与图像载体接触;一次转印 将图像载体上的调色剂图像转印到中间转印部件上的另一个调色剂图像的副机构，将叠加在中间转印部件上的调色剂图像转印到转印材料上的二次转印机构，用于检测粗糙度的粗糙度检测器 转印材料的表面的轮廓以识别转印材料的凹部，以及调色剂附着控制机构，用于根据由凹凸图案识别的转印材料的表面中的凹部增加转印到中间转印部件的调色剂的量 检测器，经过预定时间。

公开(公告)号：US07892328B2

公开(公告)日：2011-02-22

申请号：US12320630

申请日：2009-01-30

申请人： Noboru Nakao ,  Shinichi Miura ,  Takeshi Yamashita ,  Akitoshi Fujisawa

发明人： Noboru Nakao ,  Shinichi Miura ,  Takeshi Yamashita ,  Akitoshi Fujisawa

IPC分类号： B01D53/04

CPC分类号： B01D53/047 ,  B01D2253/102 ,  B01D2253/108 ,  B01D2256/16 ,  B01D2257/102 ,  B01D2257/502 ,  Y02C10/08

摘要： A PSA apparatus for high-purity hydrogen gas production is provided which can recover high purity hydrogen gas at a high recovery rate from a reformed gas (hydrogen-containing gas) produced by a reforming process, for example an autothermal reforming process, and containing, as impurity components, at least CO, CO2, N2 and/or Ar, and can contribute to reducing the equipment size, hence reducing the equipment cost. The PSA apparatus for high-purity hydrogen gas B production by removing CO, CO2 and N2 by adsorption from a hydrogen containing gas A, comprises an adsorption tower 1; and an adsorbent bed 2 in the adsorption tower, wherein, on the occasion of regeneration of the adsorbent bed 2, a purge gas C is passed through in the direction opposite to the direction of passage of the hydrogen-containing gas A.

摘要翻译： 提供了一种用于高纯度氢气生产的PSA装置，其可以从通过重整过程（例如自热重整工艺）生产的重整气体（含氢气体）以高回收率回收高纯度氢气， 作为杂质成分，至少包括CO，CO 2，N 2和/或Ar，并且可以有助于减小设备尺寸，从而降低设备成本。 通过从含氢气体A吸附除去CO，CO 2和N 2的高纯度氢气B生产的PSA装置包括吸附塔1; 和吸附塔2中的吸附剂床2，其中，在再生吸附床2的情况下，吹扫气体C沿与含氢气体A的通过方向相反的方向通过。

公开(公告)号：US07626825B2

公开(公告)日：2009-12-01

申请号：US12003225

申请日：2007-12-20

申请人： Hisashi Takamatsu ,  Takeshi Yamashita ,  Hideyuki Kuwano ,  Osamu Kagaya ,  Hiroyuki Arima

发明人： Hisashi Takamatsu ,  Takeshi Yamashita ,  Hideyuki Kuwano ,  Osamu Kagaya ,  Hiroyuki Arima

IPC分类号： H05K1/00

CPC分类号： G02B6/4201 ,  G02B6/4271 ,  G02B6/4277 ,  G02B6/4279 ,  G02B6/4281 ,  G02B6/4283 ,  H05K1/0219 ,  H05K1/0224 ,  H05K1/0253 ,  H05K1/0393 ,  H05K2201/0715 ,  H05K2201/09236 ,  H05K2201/09663 ,  H05K2201/10121 ,  H05K2201/10446

摘要： An optical transmitter module is described. The optical transmitter module includes a lead pin for electrically connecting the inside and outside of a housing, and a flexible printed circuit board connected to the lead pin. The flexible printed circuit board has a signal pattern and two ground conductor patterns to be connected to an optical modulation element, a laser terminal pattern to be connected to a semiconductor laser, a Peltier terminal pattern to be connected to a Peltier element, and two covering conductive layers in addition to a layer on which such patterns are formed. The covering conductive layers cover all the patterns except for the signal pattern.

摘要翻译： 描述了光发射机模块。 光发射机模块包括用于电连接壳体的内部和外部的引脚和连接到引脚的柔性印刷电路板。 柔性印刷电路板具有要连接到光调制元件的信号图案和两个接地导体图案，要连接到半导体激光器的激光端子图案，要连接到珀耳帖元件的珀耳帖端子图案，以及两个覆盖 除了形成这种图案的层之外的导电层。 覆盖导电层覆盖除了信号图案之外的所有图案。

公开(公告)号：US20090117030A1

公开(公告)日：2009-05-07

申请号：US11921513

申请日：2006-04-25

申请人： Noboru Nakao ,  Takeshi Yamashita ,  Akitoshi Fujisawa ,  Keita Yura

发明人： Noboru Nakao ,  Takeshi Yamashita ,  Akitoshi Fujisawa ,  Keita Yura

IPC分类号： C01B3/02

CPC分类号： C01B3/56 ,  C01B2203/042 ,  C01B2203/043 ,  C01B2203/047

摘要： For recovering hydrogen with a high recovery from a reformed gas and contributing to downsizing and cost reduction of facilities, a high-purity hydrogen E is obtained by reforming a reformable raw material A through a reforming unit 1 to yield a hydrogen-rich reformed gas B, compressing the hydrogen-rich reformed gas B with a compressor 2, allowing the compressed gas to pass through a PSA unit 3 to remove unnecessary gases other than carbon monoxide by adsorption, and allowing the resulting gas to pass through a carbon monoxide remover 4 packed with a carbon monoxide adsorbent supporting a copper halide to remove carbon monoxide by adsorption.

摘要翻译： 为了从重整气体回收高回收率的氢气并且有助于设备的小型化和成本降低，通过重整单元1对可重整原料A进行重整得到富氢重整气体B，从而获得高纯度氢E 用压缩机2压缩富氢重整气体B，允许压缩气体通过PSA单元3，通过吸附除去一氧化碳以外的不需要的气体，并使得到的气体通过包装的一氧化碳去除剂4 用一氧化碳吸附剂负载卤化铜以通过吸附除去一氧化碳。

公开(公告)号：US07402527B2

公开(公告)日：2008-07-22

申请号：US11545528

申请日：2006-10-11

申请人： Takeshi Yamashita ,  Takao Yamaguchi ,  Hideo Niko

发明人： Takeshi Yamashita ,  Takao Yamaguchi ,  Hideo Niko

IPC分类号： H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/32 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/3065 ,  H01L21/31662 ,  H01L21/32137 ,  H01L21/76232

摘要： When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.

摘要翻译： 当使用具有双电源的干蚀刻装置对含硅材料进行蚀刻时，在含硅材料的表面进行氧化之前开始施加偏压功率。 具体地说，在启动源功率的应用之前启动偏置功率的应用。 或者，施加源功率和偏置功率，使得在偏置功率的有效值达到第一预定值之后，源功率的有效值达到第二预定值。

公开(公告)号：US07377992B2

公开(公告)日：2008-05-27

申请号：US11340540

申请日：2006-01-27

申请人： Takeshi Yamashita ,  Takao Yamaguchi

发明人： Takeshi Yamashita ,  Takao Yamaguchi

IPC分类号： C23F1/00

CPC分类号： G03F7/70608 ,  H01J37/32935

摘要： A mask layer and a to-be-processed layer are irradiated with light to measure interference light formed of reflected lights from the mask layer and reflected lights from the to-be-processed layer. Thereafter, an interference component brought by the mask layer is removed from the waveform of the measured interference light, thereby calculating the waveform of the interference light brought by the to-be-processed layer. The thickness of the remaining to-be-processed layer is determined on the basis of the calculated waveform of the interference light and the thickness of the remaining to-be-processed layer is compared with a desired thickness thereof. In this way, an end point of processing on the to-be-processed layer is detected.

摘要翻译： 用光照射掩模层和待处理层，以测量由掩模层反射的光和来自待处理层的反射光形成的干涉光。 然后，从测定的干涉光的波形中除去由掩模层带来的干涉成分，计算被处理层带来的干涉光的波形。 基于干涉光的计算波形确定剩余待处理层的厚度，并将剩余待处理层的厚度与其期望厚度进行比较。 以这种方式，检测待处理层的处理终点。

公开(公告)号：US20060260466A1

公开(公告)日：2006-11-23

申请号：US11410038

申请日：2006-04-25

申请人： Takeharu Tanaka ,  Kazuhisa Kawata ,  Hiroyuki Mitani ,  Toshiki Sato ,  Noboru Nakao ,  Takeshi Yamashita ,  Keita Yura

发明人： Takeharu Tanaka ,  Kazuhisa Kawata ,  Hiroyuki Mitani ,  Toshiki Sato ,  Noboru Nakao ,  Takeshi Yamashita ,  Keita Yura

IPC分类号： B01D53/30

CPC分类号： C01B3/505 ,  B01D67/0072 ,  B01D71/022 ,  B01D71/024 ,  B01D2325/28

摘要： Disclosed herein is a hydrogen permeable member composed of a metal porous body and a hydrogen permeable membrane placed thereon, with a diffusion preventing layer interposed between them, wherein the metal porous body has those parts on which the diffusion preventing layer is absent and such parts are filled with metal oxide particles and/or porous metal oxide. This structure prevents direct contact between the metal porous body and the hydrogen permeable membrane, thereby relieving the latter from deterioration by diffusion of metal from the former.

摘要翻译： 本发明公开了一种由金属多孔体和位于其上的氢可渗透膜构成的氢可渗透构件，其间插入有防扩散层，其中金属多孔体具有不存在扩散防止层的部分， 填充有金属氧化物颗粒和/或多孔金属氧化物。 这种结构防止金属多孔体与氢可渗透膜之间的直接接触，从而通过金属从前者的扩散而使后者免于变质。

公开(公告)号：US20060258117A1

公开(公告)日：2006-11-16

申请号：US11487968

申请日：2006-07-18

申请人： Takeshi Yamashita ,  Takao Yamaguchi ,  Hideo Niko

发明人： Takeshi Yamashita ,  Takao Yamaguchi ,  Hideo Niko

IPC分类号： H01L21/76

CPC分类号： H01L21/67069 ,  H01J37/32 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/3065 ,  H01L21/31662 ,  H01L21/32137 ,  H01L21/76232

摘要： When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.

摘要翻译： 当使用具有双电源的干蚀刻装置对含硅材料进行蚀刻时，在含硅材料的表面进行氧化之前开始施加偏压功率。 具体地说，在启动源功率的应用之前启动偏置功率的应用。 或者，施加源功率和偏置功率，使得在偏置功率的有效值达到第一预定值之后，源功率的有效值达到第二预定值。