公开(公告)号：US10403711B2

公开(公告)日：2019-09-03

申请号：US15295779

申请日：2016-10-17

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Ljubisa Dragoljub Stevanovic ,  Peter Almern Losee

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/732 ,  H01L29/808 ,  H01L29/78 ,  H01L29/745 ,  H01L29/739 ,  H01L29/66 ,  G06F17/50 ,  H01L29/16 ,  H01L23/556 ,  H01L23/552 ,  H01L29/872 ,  H01L29/868

Abstract: In one embodiment, a method of manufacturing a silicon-carbide (SiC) device includes receiving a selection of a specific terrestrial cosmic ray (TCR) rating at a specific applied voltage, determining a breakdown voltage for the SiC device based at least on the specific TCR rating at the specific applied voltage, determining drift layer design parameters based at least on the breakdown voltage. The drift layer design parameters include doping concentration and thickness of the drift layer. The method also includes fabricating the SiC device having a drift layer with the determined drift layer design parameters. The SiC device has the specific TCR rating at the specific applied voltage.

公开(公告)号：US10192958B2

公开(公告)日：2019-01-29

申请号：US14313785

申请日：2014-06-24

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Peter Almern Losee

IPC: H01L29/76 ,  H01L29/10 ,  H01L29/08 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/739 ,  H01L29/06

Abstract: A method of fabricating a semiconductor device cell at a surface of a silicon carbide (SiC) semiconductor layer includes forming a segmented source and body contact (SSBC) of the semiconductor device cell over the surface of the SiC semiconductor layer. The SSBC includes a body contact portion disposed over the surface of the semiconductor layer and proximate to a body contact region of the semiconductor device cell, wherein the body contact portion is substantially disposed over the center of the semiconductor device cell. The SSBC also includes at least one source contact portion disposed over the surface of the semiconductor layer and proximate to a source contact region of the semiconductor device cell, wherein the at least one source contact portion only partially surrounds the body contact portion of the SSBC.

公开(公告)号：US10014388B1

公开(公告)日：2018-07-03

申请号：US15398489

申请日：2017-01-04

Applicant: General Electric Company

Inventor： Victor Mario Torres ,  Reza Ghandi ,  David Alan Lilienfeld ,  Avinash Srikrishnan Kashyap ,  Alexander Viktorovich Bolotnikov

IPC: H01L29/74 ,  H01L29/66 ,  H01L29/36 ,  H01L21/265 ,  H01L21/306 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/861 ,  H01L29/78

Abstract: The present disclosure relates to a symmetrical, punch-through transient voltage suppression (TVS) device includes a mesa structure disposed on a semiconductor substrate. The mesa structure includes a first semiconductor layer of a first conductivity-type, a second semiconductor layer of a second conductivity-type disposed on the first semiconductor layer, and a third semiconductor layer of the first conductive-type disposed on the second semiconductor layer. The mesa structure also includes beveled sidewalls forming mesa angles with respect to the semiconductor substrate and edge implants disposed at lateral edges of the second semiconductor layer. The edge implants including dopants of the second conductive-type are configured to cause punch-through to occur in a bulk region and not in the lateral edges of the second semiconductor layer.

公开(公告)号：US09899512B2

公开(公告)日：2018-02-20

申请号：US15052664

申请日：2016-02-24

Applicant: General Electric Company

Inventor： Peter Almern Losee ,  Ljubisa Dragoljub Stevanovic ,  Gregory Thomas Dunne ,  Alexander Viktorovich Bolotnikov

IPC: H01L29/15 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/417 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7816 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41758 ,  H01L29/66068 ,  H01L29/66681 ,  H01L29/7395 ,  H01L29/745 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/8083

Abstract: Embodiments of a silicon carbide (SiC) device are provided herein. In some embodiments, a silicon carbide (SiC) device may include a gate electrode disposed above a SiC semiconductor layer, wherein the SiC semiconductor layer comprises: a drift region having a first conductivity type; a well region disposed adjacent to the drift region, wherein the well region has a second conductivity type; and a source region having the first conductivity type disposed adjacent to the well region, wherein the source region comprises a source contact region and a pinch region, wherein the pinch region is disposed only partially below the gate electrode, wherein a sheet doping density in the pinch region is less than 2.5×1014 cm−2, and wherein the pinch region is configured to deplete at a current density greater than a nominal current density of the SiC device to increase the resistance of the source region.

公开(公告)号：US20170243935A1

公开(公告)日：2017-08-24

申请号：US15295779

申请日：2016-10-17

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Ljubisa Dragoljub Stevanovic ,  Peter Almern Losee

IPC: H01L29/06 ,  G06F17/50 ,  H01L23/556 ,  H01L29/16 ,  H01L23/552

CPC classification number: H01L29/06 ,  G06F17/5036 ,  G06F17/5068 ,  G06F2217/06 ,  H01L23/552 ,  H01L23/556 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/745 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/868 ,  H01L29/872

Abstract: In one embodiment, a method of manufacturing a silicon-carbide (SiC) device includes receiving a selection of a specific terrestrial cosmic ray (TCR) rating at a specific applied voltage, determining a breakdown voltage for the SiC device based at least on the specific TCR rating at the specific applied voltage, determining drift layer design parameters based at least on the breakdown voltage. The drift layer design parameters include doping concentration and thickness of the drift layer. The method also includes fabricating the SiC device having a drift layer with the determined drift layer design parameters. The SiC device has the specific TCR rating at the specific applied voltage.

公开(公告)号：US09716144B2

公开(公告)日：2017-07-25

申请号：US14577451

申请日：2014-12-19

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Alexander Viktorovich Bolotnikov ,  Peter Almern Losee

IPC: H01L29/10 ,  H01L21/31 ,  H01L29/06 ,  H01L29/66 ,  H01L29/73 ,  H01L21/26 ,  H01L29/08 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L29/1037 ,  H01L29/0607 ,  H01L29/0692 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802

Abstract: A semiconductor device may include a drift region having a first conductivity type, a source region having the first conductivity type, and a well region having a second conductivity type disposed adjacent to the drift region and adjacent to the source region. The well region may include a channel region that has the second conductivity type disposed adjacent to the source region and proximal to a surface of the semiconductor device cell. The channel region may include a non-uniform edge that includes at least one protrusion.

公开(公告)号：US09704949B1

公开(公告)日：2017-07-11

申请号：US15199262

申请日：2016-06-30

Applicant: General Electric Company

Inventor： Reza Ghandi ,  Peter Almern Losee ,  Alexander Viktorovich Bolotnikov ,  David Alan Lilienfeld

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/872 ,  H01L21/04 ,  H01L29/66

CPC classification number: H01L29/0634 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/872

Abstract: A charge-balanced (CB) diode may include one or more CB layers. Each CB layer may include an epitaxial layer having a first conductivity type and a plurality of buried regions having a second conductivity type. Additionally, the CB diode may include an upper epitaxial layer having the first conductivity type that is disposed adjacent to an uppermost CB layer of the one or more CB layers. The upper epitaxial layer may also include a plurality of junction barrier (JBS) implanted regions having the second conductivity type. Further, the CB diode may include a Schottky contact disposed adjacent to the upper epitaxial layer and the plurality of JBS implanted regions.

公开(公告)号：US20160307997A1

公开(公告)日：2016-10-20

申请号：US15194774

申请日：2016-06-28

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Stephen Daley Arthur ,  Alexander Viktorovich Bolotnikov ,  Peter Almern Losee ,  Kevin Sean Motocha ,  Richard Joseph Saia ,  Zachary Matthew Stum ,  Ljuibisa Dragolijub Stevanovic ,  Kuna Venkat Satya Rama Kishore ,  James William Kretchmer

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/861 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36 ,  H01L21/04

CPC classification number: H01L29/0638 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/8613

Abstract: A semiconductor device may include a substrate comprising silicon carbide; a drift layer disposed over the substrate doped with a first dopant type; an anode region disposed adjacent to the drift layer, wherein the anode region is doped with a second dopant type; and a junction termination extension disposed adjacent to the anode region and extending around the anode region, wherein the junction termination extension has a width and comprises a plurality of discrete regions separated in a first direction and in a second direction and doped with varying concentrations with the second dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from an edge of the primary blocking junction.

Abstract translation: 半导体器件可以包括包含碳化硅的衬底; 设置在掺杂有第一掺杂剂类型的衬底上的漂移层; 邻近所述漂移层设置的阳极区域，其中所述阳极区域掺杂有第二掺杂剂类型; 以及连接终端延伸部，其邻近所述阳极区域设置并且围绕所述阳极区域延伸，其中所述连接终端延伸部具有宽度并且包括在第一方向和第二方向上分离的多个离散区域，并且以 第二掺杂剂类型，以便具有通常沿着远离主阻塞结的边缘的方向减小的功能形式的第二导电类型的有效掺杂分布。

公开(公告)号：US09406762B2

公开(公告)日：2016-08-02

申请号：US14396852

申请日：2013-05-15

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Stephen Daley Arthur ,  Alexander Viktorovich Bolotnikov ,  Peter Almern Losee ,  Kevin Sean Matocha ,  Richard Joseph Saia ,  Zachary Matthew Stum ,  Ljubisa Dragoljub Stevanovic ,  Kuna Venkat Satya Rama Kishore ,  James William Kretchmer

IPC: H01L29/36 ,  H01L29/16 ,  H01L29/06 ,  H01L29/739 ,  H01L29/861 ,  H01L21/04 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0638 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/8613

Abstract: A semiconductor device includes a substrate including silicon carbide; a drift layer disposed over the substrate including a drift region doped with a first dopant and conductivity type; and a second region, doped with a second dopant and conductivity type, adjacent to the drift region and proximal to a surface of the drift layer. The semiconductor device further includes a junction termination extension adjacent to the second region with a width and discrete regions separated in a first and second direction doped with varying concentrations of the second dopant type, and an effective doping profile of the second conductivity type of functional form that generally decreases away from the edge of the primary blocking junction. The width is less than or equal to a multiple of five times the width of the one-dimensional depletion width, and the charge tolerance of the semiconductor device is greater than 1.0×1013 per cm2.

Abstract translation: 半导体器件包括：包含碳化硅的衬底; 设置在所述衬底上的漂移层，包括掺杂有第一掺杂剂和导电类型的漂移区; 以及掺杂有第二掺杂剂和导电类型的第二区域，其邻近漂移区并且靠近漂移层的表面。 所述半导体器件还包括与所述第二区相邻的连接终端延伸部，所述连接终端延伸部具有在掺杂有不同浓度的所述第二掺杂剂类型的第一和第二方向上分离的宽度和离散区域以及所述第二导电类型的功能形式的有效掺杂分布 这通常从主阻塞结的边缘减小。 宽度小于或等于一维耗尽宽度宽度的五倍的倍数，半导体器件的电荷容差大于1.0×1013 / cm2。

公开(公告)号：US20160181365A1

公开(公告)日：2016-06-23

申请号：US14577451

申请日：2014-12-19

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Alexander Viktorovich Bolotnikov ,  Peter Almern Losee

IPC: H01L29/10 ,  H01L29/78 ,  H01L21/311 ,  H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L29/08 ,  H01L29/739

CPC classification number: H01L29/1037 ,  H01L29/0607 ,  H01L29/0692 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802

Abstract: A semiconductor device may include a drift region having a first conductivity type, a source region having the first conductivity type, and a well region having a second conductivity type disposed adjacent to the drift region and adjacent to the source region. The well region may include a channel region that has the second conductivity type disposed adjacent to the source region and proximal to a surface of the semiconductor device cell. The channel region may include a non-uniform edge that includes at least one protrusion.

Abstract translation: 半导体器件可以包括具有第一导电类型的漂移区域，具有第一导电类型的源极区域和与漂移区域相邻并且与源极区域相邻设置的具有第二导电类型的阱区域。 阱区域可以包括具有第二导电类型的沟道区域，其邻近源极区域设置并且靠近半导体器件单元的表面。 沟道区域可以包括包括至少一个突起的非均匀边缘。