公开(公告)号：US10433088B2

公开(公告)日：2019-10-01

申请号：US15127002

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： Quanbo Zou

IPC: H04R31/00 ,  B81B3/00 ,  B81C1/00 ,  H04R7/04 ,  H04R19/00 ,  H04R19/02 ,  H04R7/14 ,  H04R1/06

Abstract: Provided is a PCB speaker and a method for micromachining the speaker diaphragm on PCB substrate, the method for micromachining the speaker diaphragm on PCB substrate comprises: providing metal paths and at least one through hole on the PCB substrate; providing a patterned sacrificial layer on the PCB substrate, the sacrificial layer covering all the through holes on the PCB substrate; providing a diaphragm layer on the sacrificial layer through depositing, mounting or laminating, the diaphragm layer covering the sacrificial layer and electrically connected with the metal paths on the PCB substrate, thereby forming a diaphragm layer; and releasing the sacrificial layer and the diaphragm layer remains. With the micromachining method for the above PCB substrate and the diaphragm, the production cost of the speaker can be lowered, and the reliability of the product can be improved at the same time.

公开(公告)号：US10433042B2

公开(公告)日：2019-10-01

申请号：US15772576

申请日：2015-11-03

Applicant: Goertek Inc.

Inventor： Quanbo Zou

IPC: H04R1/04 ,  H01L25/00 ,  H04R19/04 ,  G01L9/00 ,  G01L19/00 ,  H04R19/00 ,  B81B7/00 ,  B81B7/02

Abstract: A MEMS multi-module assembly, manufacturing method, and electronics apparatus are disclosed herein. The MEMS multi-module assembly comprises: a first die having a first hole; and a second die stacked on the first die, having a second MEMS device, wherein the second MEMS device is connected outside via the first hole.

公开(公告)号：US10284986B2

公开(公告)日：2019-05-07

申请号：US15569078

申请日：2015-04-29

Applicant: GOERTEK INC.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H04R31/00 ,  H04R17/00 ,  H04R17/10 ,  H04R7/06

Abstract: A piezoelectric speaker and a method for forming the piezoelectric speaker are provided. The method includes: providing a piezoelectric actuator which includes a piezoelectric layer, a bottom electrode and a top electrode, wherein the bottom electrode and the top electrode are on two opposite surfaces of the piezoelectric layer; providing a speaker frame which includes a base and a bump structure on the base; forming a solder layer on a top surface of the bump structure; and combining the bottom electrode of the piezoelectric actuator with the speaker frame through the solder layer.

公开(公告)号：US10163869B2

公开(公告)日：2018-12-25

申请号：US15562411

申请日：2015-10-20

Applicant: GOERTEK, INC.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/78 ,  H01L21/301 ,  H01L25/075 ,  H01L33/00 ,  H01L21/673 ,  H01L21/677 ,  B81C3/00

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

公开(公告)号：US20180317017A1

公开(公告)日：2018-11-01

申请号：US15769798

申请日：2015-10-21

Applicant: Goertek Inc.

Inventor： Quanbo Zou ,  Zhe Wang ,  Jun Li

IPC: H04R17/00 ,  H04R1/02 ,  H01L41/29 ,  H04R31/00 ,  H01L41/083

CPC classification number: H04R17/00 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/401 ,  H04R2307/025 ,  H04R2499/11 ,  H04R2499/15

Abstract: A micro-speaker, the manufacturing method thereof, a speaker device and an electronic apparatus are described herein. The micro-speaker comprises a case, wherein the case has an opening; and a piezoelectric layer, wherein one or more electrodes are provided on the piezoelectric layer, and wherein the piezoelectric layer is pre-buckled in its rest position, wherein the piezoelectric layer covers the opening and is bonded onto the case, to form a speaker rear cavity together with the case. The micro-speaker of the present invention has a relatively low speaker profile.

公开(公告)号：US10057689B2

公开(公告)日：2018-08-21

申请号：US15304058

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： Quanbo Zou

IPC: H04R19/00 ,  B81C1/00 ,  B81B3/00 ,  H04R7/14 ,  H04R19/02

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00158 ,  H04R7/14 ,  H04R19/02 ,  H04R2201/003

Abstract: The present invention provides a silicon speaker comprising an MEMS acoustoelectric chip and a PCB substrate, wherein the MEMS acoustoelectric chip comprises a corrugated diaphragm on a silicon substrate; and one side surface of the MEMS acoustoelectric chip is metalized, and the metalized side surface of the MEMS acoustoelectric chip is connected with the PCB substrate. The corrugated diaphragm is electrically conductive and interconnected with metal paths on MEMS acoustoelectric chip, which is led out to a first PCB metal path as one electrode. A second PCB metal path below the MEMS chip forms another electrode of the electrostatic actuator. The silicon speaker provided by the present invention lowers manufacturing costs of the speaker, and allows the diaphragm to generate high and repeatable/reliable sound pressure upon large displacements so as to improve the sounding effects of the speaker.

公开(公告)号：US09908775B2

公开(公告)日：2018-03-06

申请号：US15529619

申请日：2015-04-01

Applicant: Goertek. Inc

Inventor： Quanbo Zou ,  Zhe Wang

IPC: B81C1/00 ,  H01L25/00

CPC classification number: B81C1/00896 ,  B81C2201/0194 ,  B81C2203/01 ,  B81C2203/0127 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/11312 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

公开(公告)号：US20180053751A1

公开(公告)日：2018-02-22

申请号：US15562411

申请日：2015-10-20

Applicant: GOERTEK, INC.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/673 ,  H01L21/677

CPC classification number: H01L25/0753 ,  B81C3/001 ,  H01L21/673 ,  H01L21/67781 ,  H01L33/0079 ,  H01L2224/95

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

公开(公告)号：US20170338374A1

公开(公告)日：2017-11-23

申请号：US15536040

申请日：2015-05-21

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01L33/00 ,  H01L21/683 ,  H01L21/67 ,  H01L33/38 ,  H01L33/44 ,  H01L33/52 ,  H01L33/62 ,  H01L25/075

CPC classification number: H01L33/0079 ,  H01L21/67144 ,  H01L21/6835 ,  H01L24/00 ,  H01L25/0753 ,  H01L33/38 ,  H01L33/44 ,  H01L33/52 ,  H01L33/62 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/95 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED (402) are disclosed. The method for transferring micro-LED (402) comprises: transferring at least one micro-LED (402) from an original substrate (406) to a support body (412); transferring the at least one micro-LED (402) from the support body (412) to a backup substrate (415); and transferring the at least one micro-LED (402) from the backup substrate (415) to a receiving substrate (417).

公开(公告)号：US20170338199A1

公开(公告)日：2017-11-23

申请号：US15535683

申请日：2015-05-21

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01L23/00 ,  H01L33/62 ,  H01L25/075

CPC classification number: H01L24/97 ,  H01L24/00 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/81005 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205′) on the receiving substrate (204).