公开(公告)号：US20080026504A1

公开(公告)日：2008-01-31

申请号：US11903873

申请日：2007-09-25

申请人： Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

发明人： Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

IPC分类号： H01L31/113

CPC分类号： H01L27/14843 ,  H01L27/14623 ,  H01L27/14689 ,  H01L27/14837

摘要： A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

公开(公告)号：US20080017992A1

公开(公告)日：2008-01-24

申请号：US11826224

申请日：2007-07-13

申请人： Masaru Kito ,  Mitsuru Sato ,  Yuzo Nagata ,  Koji Hashimoto

发明人： Masaru Kito ,  Mitsuru Sato ,  Yuzo Nagata ,  Koji Hashimoto

IPC分类号： H01L21/311 ,  H01L23/48

CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L27/105 ,  H01L27/1052

摘要： A first hard mask is formed on a polysilicon film or a target member to be etched, on which a second hard mask composed of amorphous silicon is formed. Ions of boron or the like are implanted into a desired portion of the second hard mask, and then the first hard mask is etched with a mask of the second hard mask. Only the portion not ion-implanted of the second hard mask is etched off by wet etching. A sidewall film is formed on sidewalls of the first hard mask, and then the first hard mask having an upper portion exposed, not covered with the second hard mask is selectively etched off.

摘要翻译： 第一硬掩模形成在多晶硅膜或要蚀刻的靶构件上，在其上形成由非晶硅构成的第二硬掩模。 将硼等的离子注入到第二硬掩模的期望部分中，然后用第二硬掩模的掩模蚀刻第一硬掩模。 通过湿式蚀刻仅蚀刻第二硬掩模未离子注入的部分。 在第一硬掩模的侧壁上形成侧壁膜，然后选择性地蚀刻除去未被第二硬掩模覆盖的具有暴露的上部的第一硬掩模。

公开(公告)号：US20080005708A1

公开(公告)日：2008-01-03

申请号：US11589170

申请日：2006-10-30

申请人： Mitsuru Sato ,  Takehiro Yamazaki

发明人： Mitsuru Sato ,  Takehiro Yamazaki

IPC分类号： G06F17/50

CPC分类号： G06F17/5022 ,  G06F17/5081

摘要： According to the present invention, in a CAD apparatus, circuit data for a circuit diagram created through circuit design processing is stored in a circuit database. Based on the circuit data stored in the circuit database, the respective logic types of components are discriminated and set for the component in the circuit data. Moreover, by adding logically transparent nets to the circuit data stored in the circuit database, DRC data dedicated to a DRC is created and stored in a DRC database. A DRC execution unit performs the DRC, by utilizing the DRC data stored in the DRC database.

摘要翻译： 根据本发明，在CAD装置中，通过电路设计处理创建的电路图的电路数据被存储在电路数据库中。 基于存储在电路数据库中的电路数据，对电路数据中的分量鉴别和设置各个逻辑类型的组件。 此外，通过向存储在电路数据库中的电路数据添加逻辑透明网络，创建专用于DRC的DRC数据并将其存储在DRC数据库中。 DRC执行单元通过利用存储在DRC数据库中的DRC数据执行DRC。

公开(公告)号：US07262128B2

公开(公告)日：2007-08-28

申请号：US10875590

申请日：2004-06-25

申请人： Ichio Yudasaka ,  Mitsuru Sato

发明人： Ichio Yudasaka ,  Mitsuru Sato

IPC分类号： H01L21/4763

CPC分类号： H05K3/0017 ,  H01L21/76802 ,  H05K3/4644 ,  H05K2203/0582

摘要： Method of forming a multilayer interconnection structure that includes a contact hole for reliably connecting between layers, without damaging a substrate. A column shaped mask material is formed in a position for forming a contact hole using a resist, and an interlayer insulating film is applied to the whole surface of the substrate excluding the mask material. Then, the mask material is removed by a method such as peeling. As a result, a hole generated thereby is used as a contact hole.

摘要翻译： 形成多层互连结构的方法，其包括用于层之间可靠连接的接触孔，而不损坏基板。 在使用抗蚀剂形成接触孔的位置上形成列状掩模材料，并且将除了掩模材料之外的层间绝缘膜施加到基板的整个表面。 然后，通过剥离等方法除去掩模材料。 结果，由此产生的孔用作接触孔。

公开(公告)号：US20070178394A1

公开(公告)日：2007-08-02

申请号：US11621896

申请日：2007-01-10

申请人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

IPC分类号： G03C5/00

CPC分类号： G03F7/70616 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/70341 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

摘要翻译： 提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。 抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B） 和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1） 含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

公开(公告)号：US20060223328A1

公开(公告)日：2006-10-05

申请号：US11389079

申请日：2006-03-27

申请人： Sumio Utsunomiya ,  Mitsuru Sato

发明人： Sumio Utsunomiya ,  Mitsuru Sato

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/306

CPC分类号： H01L21/02667 ,  F27B17/0025 ,  H01L21/2022 ,  H01L21/67103 ,  H01L27/1214 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device, comprises providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source.

摘要翻译： 一种制造半导体器件的方法，包括通过使用由氢氧混合气体燃烧的气体燃烧器的火焰作为热源，将沉积在基板上的半导体层提供热处理。

公开(公告)号：US20060210913A1

公开(公告)日：2006-09-21

申请号：US10553315

申请日：2004-04-15

申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Mitsuru Sato ,  Syogo Matsumaru ,  Hideo Hada

发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Mitsuru Sato ,  Syogo Matsumaru ,  Hideo Hada

IPC分类号： G03C1/76

CPC分类号： C07C43/126 ,  C07C43/162 ,  C07C43/1747 ,  C07C69/96 ,  C07C2601/14 ,  C07C2602/42 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  Y10S430/108

摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.

摘要翻译： 具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。 光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

公开(公告)号：US20060163617A1

公开(公告)日：2006-07-27

申请号：US10521587

申请日：2003-08-11

申请人： Kazushi Wada ,  Kouichi Harada ,  Shuji Otsuza ,  Mitsuru Sato

发明人： Kazushi Wada ,  Kouichi Harada ,  Shuji Otsuza ,  Mitsuru Sato

IPC分类号： H01L29/768

CPC分类号： H01L27/14806

摘要： Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep potion of a substrate. A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily. Thus, crosstalk between the adjacent pixels can be prevented.

摘要翻译： 可以通过在衬底的深部设置溢流屏障的结构来防止相邻像素之间的串扰。 部分P型区域150设置在垂直传送寄存器124的下层区域的预定位置和通道停止区域126.该P型区域150用于调整垂直传送寄存器的下层区域中的电位 124和通道停止区域126，使得在从垂直传送寄存器124的最小电位位置到溢流挡板128的范围内，电位可能变得小于光传感器122的下层区域的电位。因此，由于电位 在垂直传送寄存器124的下层区域和下层区域两侧的沟道阻挡区域126为低，由传感器区域光电转换的电荷被该势垒阻挡，并且不能容易地扩散。 因此，可以防止相邻像素之间的串扰。

公开(公告)号：US20060127799A1

公开(公告)日：2006-06-15

申请号：US10537162

申请日：2003-12-02

申请人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya ,  Kazuhiro Fujii ,  Kenichi Sato

发明人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya ,  Kazuhiro Fujii ,  Kenichi Sato

IPC分类号： G03C1/76

CPC分类号： G03F7/32 ,  G03F7/0397 ,  G03F7/40

摘要： A resist pattern forming method which can prevent a fine resist pattern from collapsing in a drying step after a development treatment in case of forming a resist pattern is provided. This method comprises applying a positive resist composition comprising a resin component (A), which has an alkali-soluble unit content of less than 20 mol % and also has an acid dissociable dissolution inhibiting group, alkali solubility thereof being enhanced by action of acid, an acid generator component (B) which generates an acid under exposure, and an organic solvent (C) which dissolves the components (A) and (B) on a substrate; subjecting the resulting film to prebaking, selective exposure, post exposure baking and alkali development; performing a displacing step of displacing a liquid existing on the substrate with a displacing liquid at least one time; displacing the displacing liquid with a liquid for critical drying; and performing a drying step of drying the liquid for critical drying via a critical state.

摘要翻译： 提供了抗蚀剂图案形成方法，其可以在形成抗蚀剂图案的情况下，在显影处理之后，在干燥步骤中防止细小的抗蚀剂图案塌陷。 该方法包括涂布含有碱溶性单元含量小于20摩尔％的树脂成分（A）的正型抗蚀剂组合物，并且还具有酸解离溶解抑制基团，其碱溶性通过酸的作用而增强， 产生暴露酸的酸产生剂组分（B）和在基材上溶解组分（A）和（B）的有机溶剂（C）; 对所得膜进行预烘烤，选择性曝光，曝光后烘烤和碱显影; 执行置换步骤，用置换液体至少一次移动存在于基板上的液体; 用液体移动置换液体进行临界干燥; 并执行干燥步骤，用于通过临界状态干燥用于临界干燥的液体。

公开(公告)号：US20060124051A1

公开(公告)日：2006-06-15

申请号：US11239214

申请日：2005-09-30

申请人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

发明人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/10 ,  C30B7/00 ,  C30B29/16

摘要： An objective of the present invention is to provide a zinc oxide (ZnO) single crystal whose electroconductivity is excellent and which has a high quality. The invention relates to a zinc oxide single crystal whose concentration of metals other than zinc in the crystal fulfills the following equation: [−cM]/[+cM]≧3wherein M is a metal other than zinc, [−cM] is a concentration of M in a −c region in the zinc oxide crystal, and [+cM] is a concentration of M in a +c region in the zinc oxide crystal.

摘要翻译： 本发明的目的是提供一种其导电性优异且质量高的氧化锌（ZnO）单晶。 本发明涉及一种氧化锌单晶，其晶体中锌以外的金属的浓度满足以下等式：<？在线公式描述=“在线公式”end =“lead”？> [ - cM] / [+ cM]> = 3 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是除锌以外的金属，[-cM] -c区域，[+ cM]是氧化锌晶体中+ c区域中的M的浓度。