公开(公告)号：US07378328B2

公开(公告)日：2008-05-27

申请号：US11352310

申请日：2006-02-13

申请人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

发明人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

摘要： A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

摘要翻译： 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

公开(公告)号：US20070099309A1

公开(公告)日：2007-05-03

申请号：US11640229

申请日：2006-12-18

申请人： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

发明人： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

IPC分类号： H01L21/00

CPC分类号： B82Y10/00 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/08 ,  G11B13/06

摘要： A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.

公开(公告)号：US20060284793A1

公开(公告)日：2006-12-21

申请号：US11453537

申请日：2006-06-15

申请人： Young-soo Park ,  Jung-woo Kim ,  Jang-yeon Kwon ,  In-kyeong Yoo

发明人： Young-soo Park ,  Jung-woo Kim ,  Jang-yeon Kwon ,  In-kyeong Yoo

IPC分类号： G09G3/20

CPC分类号： H04M1/72527 ,  H04M1/0266

摘要： Provided is a display system that uses a mobile communication terminal. The display system includes a mobile communication terminal having an insertion unit, and a mobile display device having a slot-type connection unit insertable into the insertion unit of the mobile communication terminal. Accordingly, it is possible to display received content on a display screen larger than that of the mobile communication terminal. Also, the display system overcomes noise problems and displays high-definition images by constructing a minimum number of connection terminals that connect the mobile display device to the mobile communication terminal. A method for displaying an image from a mobile communication terminal and a computer program product including a storage medium for performing the method are also provided.

摘要翻译： 提供了一种使用移动通信终端的显示系统。 显示系统包括具有插入单元的移动通信终端和具有插入到移动通信终端的插入单元中的时隙型连接单元的移动显示装置。 因此，可以在比移动通信终端大的显示画面上显示接收到的内容。 此外，显示系统通过构造将移动显示装置连接到移动通信终端的最少数量的连接终端来克服噪声问题并显示高清晰度图像。 还提供了一种用于从移动通信终端显示图像的方法以及包括用于执行该方法的存储介质的计算机程序产品。

公开(公告)号：US06998162B2

公开(公告)日：2006-02-14

申请号：US10441122

申请日：2003-05-20

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  In-sook Kim

IPC分类号： B32B3/02

CPC分类号： G11B7/26 ,  G11B7/24035 ,  G11B7/241 ,  Y10T428/21

摘要： An optical recording medium having a phase transition material film and a method of manufacturing the optical recording medium are provided. In the method, first, a phase transition material film, a sacrificial film, and a metal film are sequentially stacked on a substrate. Next, the metal film is anodized to form a metal oxide film having a plurality of holes, and portions of the sacrificial film exposed through the holes are anode-oxidized to form oxide films. Thereafter, the phase transition material film is patterned by removing the metal oxide film and by etching the sacrificial film and the phase transition material film using the oxide films as a mask. Then, the oxide films are removed from the sacrificial film, and an upper insulation film, a reflection film, and a protection film are deposited on the upper surface of the patterned phase transition material film. The optical recording medium can be simply manufactured by using a self-alignment method and can have a highly-integrated large-capacity memory.

摘要翻译： 提供具有相变材料膜的光记录介质和制造光记录介质的方法。 在该方法中，首先，将相变材料膜，牺牲膜和金属膜依次层叠在基板上。 接下来，金属膜被阳极化以形成具有多个孔的金属氧化物膜，并且通过孔露出的部分牺牲膜被阳极氧化以形成氧化物膜。 此后，通过去除金属氧化物膜并且通过使用氧化膜作为掩模蚀刻牺牲膜和相变材料膜来对相变材料膜进行图案化。 然后，从牺牲膜上除去氧化物膜，并且在图案化的相变材料膜的上表面上沉积上绝缘膜，反射膜和保护膜。 光记录介质可以通过使用自对准方法简单地制造，并且可以具有高度集成的大容量存储器。

公开(公告)号：US06867999B2

公开(公告)日：2005-03-15

申请号：US10776233

申请日：2004-02-12

申请人： In-kyeong Yoo ,  Byong-man Kim

发明人： In-kyeong Yoo ,  Byong-man Kim

IPC分类号： G11C11/412 ,  G11C16/04 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  G11C7/00

CPC分类号： B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

摘要翻译： 提供了包括具有RAM和ROM功能的单个晶体管的存储器件及其操作和制造方法。 存储器件包括形成在衬底上的单个晶体管。 晶体管可以是具有带非易失性存储元件的栅极的存储晶体管，或者在晶体管和衬底之间提供非易失性存储元件。

公开(公告)号：US06815681B2

公开(公告)日：2004-11-09

申请号：US10465600

申请日：2003-06-20

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

IPC分类号： H01J3700

CPC分类号： H01J37/3175 ,  H01J2237/31781

摘要： An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.

摘要翻译： 使用图案化发射器的电子束光刻设备包括使用形成在热电板上的图案化金属薄层作为掩模发射电子的热电板发射器。 当发射极被加热时，电子从被图案化电介质层覆盖的发射体的部分发射，而不是由图案化的金属薄层覆盖的发射体的部分发射，并且因此将发射极的图案投影到衬底上。 为了防止发射的电子束的分散，电子束可以由永磁体，电磁体或偏转器单元来控制。 从而获得在衬底上所需图案的一对一或一对一投影。

公开(公告)号：US06784438B2

公开(公告)日：2004-08-31

申请号：US10688953

申请日：2003-10-21

申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

IPC分类号： H01J37073

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06358 ,  H01J2237/31781

摘要： An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.

公开(公告)号：US6077716A

公开(公告)日：2000-06-20

申请号：US368580

申请日：1999-08-05

申请人： In-kyeong Yoo

发明人： In-kyeong Yoo

IPC分类号： H01L27/108 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/00

CPC分类号： H01L27/11502 ,  G11C11/5657 ,  H01L27/11585 ,  H01L27/1159

摘要： The present invention relates to a matrix type multiple numeration system ferroelectric random access memory using a leakage current of dielectric, which is non-volatile and with which a multiple numeration system is realized, and a method for manufacturing the same. In the memory according to the present invention, the unit cells formed of the dielectric and ferroelectric capacitors are arranged in a matrix, the lower electrodes are connected to bit lines, and the upper electrodes are connected to word lines. Thus, a transistor for selecting cells is included for each word line and each bit line. Therefore, it is possible to heighten the integration degree, since the memory cells are each formed of only a dielectric and a ferroelectric capacitor, and to improve productivity since manufacturing processes are simple.

摘要翻译： 本发明涉及使用非易失性的电介质的漏电流并实现多计数系统的矩阵式多计数系统铁电随机存取存储器及其制造方法。 在根据本发明的存储器中，由电介质和铁电电容器形成的单电池以矩阵形式布置，下电极连接到位线，并且上电极连接到字线。 因此，用于选择单元的晶体管包括每个字线和每个位线。 因此，由于存储单元仅由电介质和铁电体电容器构成，所以可以提高积分度，并且由于制造工艺简单，所以提高了生产率。

公开(公告)号：US5986298A

公开(公告)日：1999-11-16

申请号：US961883

申请日：1997-10-31

申请人： In-kyeong Yoo

发明人： In-kyeong Yoo

IPC分类号： H01L27/108 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76

CPC分类号： H01L27/11502 ,  G11C11/5657 ,  H01L27/11585 ,  H01L27/1159

摘要： The present invention relates to a matrix type multiple numeration system ferroelectric random access memory using a leakage current of dielectric, which is non-volatile and with which a multiple numeration system is realized, and a method for manufacturing the same. In the memory according to the present invention, the unit cells formed of the dielectric and ferroelectric capacitors are arranged in a matrix, the lower electrodes are connected to bit lines, and the upper electrodes are connected to word lines. Thus, a transistor for selecting cells is included for each word line and each bit line. Therefore, it is possible to heighten the integration degree, since the memory cells are each formed of only a dielectric and a ferroelectric capacitor, and to improve productivity since manufacturing processes are simple.

公开(公告)号：US5946284A

公开(公告)日：1999-08-31

申请号：US905075

申请日：1997-08-01

申请人： Il-sub Chung ,  In-kyeong Yoo

发明人： Il-sub Chung ,  In-kyeong Yoo

IPC分类号： G11B7/24 ,  B81C99/00 ,  G11B9/00 ,  G11B9/02 ,  G11B9/14 ,  G11B11/08 ,  G11B13/06 ,  G11B7/00

CPC分类号： B82Y10/00 ,  G11B9/02 ,  G11B9/14 ,  G11B9/1409 ,  G11B13/06

摘要： In a disk apparatus using a ferroelectric thin film coated on the surface of a disk as a recording medium, an electrode layer is formed on a substrate and the ferroelectric thin film is formed on the electrode layer, thereby forming a disk. A head is installed on an arm over the disk. The head has a reflector, and a microtip electrode, for creating or erasing polarization of the ferroelectric thin film. An optical system is provided over the head. The head moves towards or away from the disk depending on recorded information (polarization direction), and the movement is read by the optical system. Therefore, a low-priced disk apparatus, capable of freely recording and reproducing information semipermanently, is realized.

摘要翻译： 在将作为记录介质的盘表面上涂敷铁电薄膜的磁盘装置中，在基板上形成电极层，在电极层上形成强电介质薄膜，形成磁盘。 头部安装在磁盘上的手臂上。 头部具有用于产生或擦除铁电薄膜的极化的反射器和微尖端电极。 一个光学系统设置在头部上。 根据记录的信息（偏振方向），磁头朝向或远离盘移动，并且光学系统读取移动。 因此，实现了能够半自动地自动记录和再现信息的低价盘装置。