公开(公告)号：US07923316B2

公开(公告)日：2011-04-12

申请号：US11808521

申请日：2007-06-11

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/00

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20060244355A1

公开(公告)日：2006-11-02

申请号：US11350106

申请日：2006-02-09

申请人： Kyung-bae Park ,  In-sun Kim ,  Hee-nam Hwang ,  Takashi Noguchi ,  Jang-yeon Kwon ,  Young-soo Park

发明人： Kyung-bae Park ,  In-sun Kim ,  Hee-nam Hwang ,  Takashi Noguchi ,  Jang-yeon Kwon ,  Young-soo Park

IPC分类号： G09G3/32 ,  H01K1/30 ,  H01J61/40 ,  G09G3/10 ,  H01J29/88 ,  G02F1/361

CPC分类号： G02F1/133305 ,  B82Y30/00 ,  C08F222/1006 ,  C08K3/36 ,  C08K2201/011 ,  H01J5/02 ,  H01J9/241 ,  H01J2217/49264 ,  H01J2329/8615

摘要： A plastic substrate for a display panel and method of manufacturing the same are provided. The plastic substrate is obtained by mixing an oligomer of a thermosetting resin, inorganic nanoparticles, and 1,6-hexanedioldiacrylate in a mass ratio of 1:0.8˜1.2:0.8˜1.2. The plastic substrate has transparency and optical isotropy. The method includes preparing a resin composite in which an oligomer of a thermosetting resin, inorganic nanoparticles, 1,6-hexanedioldiacrylate, and a photoinitiator are dissolved and distributed in a solvent; casting a substrate using the resin composite; and curing the substrate by irradiating ultraviolet rays onto the substrate.

摘要翻译： 提供了一种用于显示面板的塑料基板及其制造方法。 通过将热固性树脂的低聚物，无机纳米颗粒和1,6-己二醇二丙烯酸酯以1:0.8〜1.2:0.8〜1.2的质量比混合来获得塑料基材。 塑料基板具有透明度和光学各向同性。 该方法包括制备其中将热固性树脂的低聚物，无机纳米颗粒，1,6-己二醇二丙烯酸酯和光引发剂溶解并分散在溶剂中的树脂复合材料; 使用树脂复合材料铸造基材; 并通过在基板上照射紫外线来固化基板。

公开(公告)号：US07233022B2

公开(公告)日：2007-06-19

申请号：US10980838

申请日：2004-11-04

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L29/10

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20070259487A1

公开(公告)日：2007-11-08

申请号：US11808521

申请日：2007-06-11

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/336

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20070155067A1

公开(公告)日：2007-07-05

申请号：US11553693

申请日：2006-10-27

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Hyuck Lim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Hyuck Lim ,  Jang-yeon Kwon

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/2026 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/1281

摘要： Disclosed herein are methods of fabricating a polycrystalline silicon film and methods of fabricating a thin film transistor (TFT) using the same. The method of fabricating a polycrystalline silicon film includes forming an electrically insulating thermally conductive layer using a material selected from the group consisting of aluminum-containing ceramics, cobalt-containing ceramics, and iron-containing ceramics, on a substrate; forming an amorphous silicon layer on the thermally conductive layer; forming an amorphous silicon island by patterning the amorphous silicon layer; and crystallizing amorphous silicon by annealing the amorphous silicon island. A polycrystalline silicon film having a very large grain size and a TFT using the same can be formed in desired positions.

摘要翻译： 本文公开了制造多晶硅膜的方法和使用其制造薄膜晶体管（TFT）的方法。 制造多晶硅膜的方法包括在基板上使用选自含铝陶瓷，含钴陶瓷和含铁陶瓷的材料形成电绝缘导热层; 在所述导热层上形成非晶硅层; 通过图案化非晶硅层形成非晶硅岛; 并通过退火非晶硅岛结晶非晶硅。 可以在期望的位置形成具有非常大的晶粒尺寸的多晶硅膜和使用其的TFT。

公开(公告)号：US20050153476A1

公开(公告)日：2005-07-14

申请号：US11033539

申请日：2005-01-12

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H05B33/02 ,  G09F9/30 ,  H01L21/00 ,  H01L21/8242 ,  H01L27/32 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22

CPC分类号： H01L51/0097 ,  H01L27/3244 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： Provided is a flexible display including a plastic substrate and a protective layer formed on the plastic substrate. Accordingly, the plastic substrate is protected from a thermal damage due to a thermal treatment, and sufficient thermal treatment for forming a polysilicon layer can be performed. Also, a polysilicon layer having a good surface and excellent prosperities can be formed due to reflection or absorption of a laser light by the protective layer. Consequently, the performance and durability of the flexible display are greatly improved.

摘要翻译： 提供了一种柔性显示器，其包括塑料基板和形成在塑料基板上的保护层。 因此，可以防止塑料基板由于热处理而导致热损伤，并且可以进行足够的用于形成多晶硅层的热处理。 此外，由于保护层的激光的反射或吸收，可以形成具有良好表面和极好繁荣度的多晶硅层。 因此，柔性显示器的性能和耐用性大大提高。

公开(公告)号：US07479667B2

公开(公告)日：2009-01-20

申请号：US11022756

申请日：2004-12-28

申请人： Jang-yeon Kwon ,  Takashi Noguchi ,  Young-soo Park ,  Do-young Kim

发明人： Jang-yeon Kwon ,  Takashi Noguchi ,  Young-soo Park ,  Do-young Kim

IPC分类号： H01L29/76 ,  H01L29/745

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/1029 ,  H01L29/6675 ,  H01L29/78663 ,  H01L29/78672

摘要： Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

摘要翻译： 提供了包括被定义为高和低迁移率区域的有源区域和具有半导体器件的薄膜晶体管的半导体器件。 有源面积的迁移率可以降低到足以满足半导体器件要求的水平。 有源区的迁移率的降低有助于减少半导体器件之间的迁移率偏差。 结果，可以大大提高采用大规模半导体器件的平板显示器的质量。

公开(公告)号：US07388594B2

公开(公告)日：2008-06-17

申请号：US11131238

申请日：2005-05-18

申请人： Seong-jin Kim ,  Seung-joo Shin ,  Kye-si Kwon ,  Jang-yeon Kwon ,  Il-kwon Moon

发明人： Seong-jin Kim ,  Seung-joo Shin ,  Kye-si Kwon ,  Jang-yeon Kwon ,  Il-kwon Moon

IPC分类号： B41J2/41

CPC分类号： G03G15/32 ,  G03G15/75 ,  G03G2217/0075

摘要： An electrostatic latent image forming medium includes a frame, an imaging surface on which an electrostatic latent image is to be formed, the imaging surface being supported by the frame, and an alteration mechanism for altering the electrostatic latent image on the imaging surface, the alteration mechanism being between the frame and the imaging surface. When signals are selectively applied to the alteration mechanism, an electrostatic latent image with a potential different from a potential of its surrounding area is formed on the imaging surface.

摘要翻译： 静电潜像形成介质包括框架，要在其上形成静电潜像的成像表面，由框架支撑的成像表面和用于改变成像表面上的静电潜像的改变机构，改变 机构位于框架和成像表面之间。 当信号被选择性地施加到改变机构时，在成像表面上形成具有与其周围区域的电位不同的电位的静电潜像。

公开(公告)号：US20070172999A1

公开(公告)日：2007-07-26

申请号：US11702057

申请日：2007-02-05

申请人： Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

发明人： Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

IPC分类号： H01L21/84

CPC分类号： H01L29/78603 ,  G02F1/133305 ,  G02F1/136227 ,  G02F2201/50 ,  H01L23/3192 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/66757 ,  H01L51/5253 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2251/5338 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

摘要： In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

摘要翻译： 在柔性基板上实现的薄膜半导体器件，使用该薄膜半导体器件的电子器件及其制造方法中，薄膜半导体器件和电子器件包括柔性基板，形成在柔性基板上的半导体芯片 以及密封半导体芯片的保护盖。 通过使用保护盖，可以提高薄膜半导体器件对由于基板弯曲引起的应力的耐久性。

公开(公告)号：US20060157787A1

公开(公告)日：2006-07-20

申请号：US11330344

申请日：2006-01-12

申请人： Hans Cho ,  Hyuck Lim ,  Takashi Noguchi ,  Jang-yeon Kwon

发明人： Hans Cho ,  Hyuck Lim ,  Takashi Noguchi ,  Jang-yeon Kwon

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L21/268 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/66575 ,  H01L29/66757 ,  H01L29/66772

摘要： A thin film transistor (TFT) that can prevent damage to a silicon layer under a gate electrode in an annealing process by using a first gate electrode having high thermal resistance and a second gate electrode having high reflectance and a method of manufacturing the TFT are provided. The method of manufacturing a TFT includes forming a double-layered gate electrode which includes a first gate electrode formed of a material having high thermal resistance and a second gate electrode formed of a metal having high optical reflectance on the first gate electrode, and forming a source and a drain by annealing doped regions on both sides of a silicon layer under the gate electrode by radiating a laser beam onto the entire upper surface of the silicon layer.