公开(公告)号：US06927074B2

公开(公告)日：2005-08-09

申请号：US10442627

申请日：2003-05-21

申请人： Sheng Teng Hsu ,  Tingkai Li ,  David R. Evans

发明人： Sheng Teng Hsu ,  Tingkai Li ,  David R. Evans

IPC分类号： H01L27/10 ,  G11C11/15 ,  G11C13/00 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L21/00

CPC分类号： G11C13/0007 ,  B82Y10/00 ,  G11C11/15 ,  G11C2213/31 ,  G11C2213/52 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147

摘要： An asymmetric memory cell and method for forming an asymmetric memory cell are provided. The method comprises: forming a bottom electrode having a first area; forming an electrical pulse various resistance (EPVR) material overlying the bottom electrode; forming a top electrode overlying the EPVR layer having a second area, less than the first area. In some aspects the second area is at least 20% smaller than the first area. The EPVR is a material such as colossal magnetoresistance (CMR), high temperature super conducting (HTSC), or perovskite metal oxide materials. The method further comprises: inducing an electric field between the electrodes; inducing current flow through the EPVR adjacent the top electrode; and, in response to inducing current flow through the EPVR adjacent the top electrode, modifying the resistance of the EPVR. Typically, the resistance is modified within the range of 100 ohms to 10 mega-ohms.

摘要翻译： 提供了一种用于形成非对称存储单元的非对称存储单元和方法。 该方法包括：形成具有第一区域的底部电极; 形成覆盖底部电极的各种电阻（EPVR）材料的电脉冲; 形成覆盖在EPVR层上的顶部电极，其具有小于第一区域的第二区域。 在一些方面，第二区域比第一区域小至少20％。 EPVR是诸如巨磁阻（CMR），高温超导（HTSC）或钙钛矿金属氧化物材料的材料。 该方法还包括：在电极之间引入电场; 通过邻近顶部电极的EPVR引起电流流动; 并且响应于通过与顶部电极相邻的EPVR的电流流动，修改EPVR的电阻。 通常，电阻在100欧姆到10兆欧姆的范围内被修改。

公开(公告)号：US06777327B2

公开(公告)日：2004-08-17

申请号：US09820068

申请日：2001-03-28

申请人： Wei Pan ,  Jer-Shen Maa ,  David R. Evans ,  Sheng Teng Hsu

发明人： Wei Pan ,  Jer-Shen Maa ,  David R. Evans ,  Sheng Teng Hsu

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  C23C16/0209 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/76864 ,  H01L21/76876

摘要： A rapid thermal process (RTP) provides steps wherein silicon wafers that are pre-coated with barrier metal films by either in-situ or ex-situ CVD or physical vapor deposition (PVD) are pre-treated, prior to deposition of a Cu film thereon, in a temperature range of between 250 and 550 degrees Celsius in a non-reactive gas such as hydrogen gas (H2), argon (Ar), or helium (He), or in an ambient vacuum. The chamber pressure typically is between 0.1 mTorr and 20 Torr, and the RTP time typically is between 30 to 100 seconds. Performing this rapid thermal process before deposition of the Cu film results in a thin, shiny, densely nucleated, and adhesive Cu film deposited on a variety of barrier metal surfaces. The pre-treatment process eliminates variations in the deposited Cu film caused by Cu precursors and is insensitive to variation in precursor composition, volatility, and other precursor variables. Accordingly, the process disclosed herein is an enabling technology for the use of metal organic CVD (MOCVD) Cu in IC fabrication.

摘要翻译： 快速热处理（RTP）提供了在沉积Cu膜之前预处理通过原位或原位CVD或物理气相沉积（PVD）预涂覆有阻挡金属膜的硅晶片的步骤 在非反应性气体如氢气（H 2），氩气（Ar）或氦气（He））或在环境真空中，在250-550摄氏度的温度范围内。 室压力通常在0.1mTorr和20Torr之间，并且RTP时间通常在30至100秒之间。 在沉积Cu膜之前进行这种快速热处理会导致沉积在各种阻挡金属表面上的薄而有光泽，致密成核和粘附的Cu膜。 预处理过程消除了由Cu前体引起的沉积的Cu膜的变化，并且对前体组成，挥发性和其它前体变量的变化不敏感。 因此，本文公开的方法是在IC制造中使用金属有机CVD（MOCVD）Cu的使能技术。

公开(公告)号：US06764537B2

公开(公告)日：2004-07-20

申请号：US10453829

申请日：2003-06-02

申请人： Wei-Wei Zhuang ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

发明人： Wei-Wei Zhuang ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

IPC分类号： C23C1618

CPC分类号： H01L21/28556 ,  C23C16/18

摘要： A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.

摘要翻译： 铜基金属薄膜在基板上进行化学气相沉积的方法包括在化学气相沉积室中加热要沉积铜金属薄膜的基板; 蒸发含有铜金属的前体，其中前体是（α-甲基苯乙烯）Cu（I）（hfac）的化合物，其中hfac是六氟乙酰丙酮化物，和（hfac）Cu（I）L，其中L是烯烃; 将蒸发的前体引入与加热的基底相邻的化学气相沉积室; 并将蒸发的前体冷凝到基底上，从而将铜金属沉积到基底上。 用于铜金属薄膜的化学气相沉积的铜金属前体是（α-甲基苯乙烯）Cu（I）（hfac）的化合物，其中hfac是六氟乙酰丙酮化物，和（hfac）Cu（I）L，其中 L是从由1-戊烯，1-己烯和三甲基乙烯基硅烷组成的烯烃族中获得的烯烃。

公开(公告)号：US06716744B2

公开(公告)日：2004-04-06

申请号：US10140460

申请日：2002-05-06

申请人： Wei Pan ,  David R. Evans ,  Sheng Teng Hsu

发明人： Wei Pan ,  David R. Evans ,  Sheng Teng Hsu

IPC分类号： H01L214763

CPC分类号： H01L21/76846 ,  H01L21/28556 ,  H01L21/28562 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of adhering copper thin film to a substrate in an integrated circuit structure includes preparing a substrate, including forming active regions and trenches for interconnect structures; depositing a metal barrier layer on the substrate; depositing an ultra thin film layer of tungsten over the barrier metal layer; depositing a copper thin film on the tungsten ultra thin film layer; removing excess copper and tungsten to the level of the metal barrier layer; and completing the integrated circuit structure. An integrated circuit having a copper interconnect therein formed over a layer of barrier metal includes a substrate, including active regions, vias and trenches for interconnect structures; a metal barrier layer formed on the substrate, wherein said metal barrier layer is taken from the group of materials consisting of Ta, TiN, TaN, TaSiN and TiSiN, and formed to a thickness of between about 5 nm to 10 nm; an ultra thin film layer of tungsten formed on the barrier metal layer, said tungsten ultra thin film layer having a thickness of between about 1 nm to 5 nm; and a copper thin film layer formed on the tungsten ultra thin film layer to a thickness sufficient to fill the vias and trenches.

摘要翻译： 在集成电路结构中将铜薄膜粘合到基板上的方法包括制备基板，包括形成用于互连结构的有源区和沟槽; 在衬底上沉积金属阻挡层; 在所述阻挡金属层上沉积钨的超薄膜层; 在钨超薄膜层上沉积铜薄膜; 将过量的铜和钨去除到金属阻挡层的水平; 并完成集成电路结构。 在其上形成有铜互连的集成电路包括一个衬底，包括有源区，用于互连结构的通孔和沟槽; 形成在所述基板上的金属阻挡层，其中所述金属阻挡层取自由Ta，TiN，TaN，TaSiN和TiSiN组成的材料组，并形成为约5nm至10nm的厚度; 形成在所述阻挡金属层上的钨的超薄膜层，所述钨超薄膜层的厚度为约1nm至5nm; 以及形成在钨超薄膜层上的厚度足以填充通路和沟槽的厚度的铜薄膜层。

公开(公告)号：US06660628B1

公开(公告)日：2003-12-09

申请号：US10391291

申请日：2003-03-17

申请人： Wei Pan ,  Wei-Wei Zhuang ,  David R. Evans ,  Sheng Teng Hsu

发明人： Wei Pan ,  Wei-Wei Zhuang ,  David R. Evans ,  Sheng Teng Hsu

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76856

摘要： A method of forming a titanium-based barrier metal layer includes preparing a substrate, including forming IC elements on the substrate; forming a titanium-based barrier metal precursor using a solution of about 5% by volume tetrakis (methylethylamino) titanium (TMEAT) and about 95% by volume octane; and depositing a titanium-based barrier layer on the substrate by MOCVD.

摘要翻译： 形成钛基阻挡金属层的方法包括制备基板，包括在基板上形成IC元件; 使用约5体积％四（甲基乙基氨基）钛（TMEAT）和约95体积％辛烷的溶液形成钛基阻隔金属前体; 以及通过MOCVD在基板上沉积钛基阻挡层。

公开(公告)号：US06555916B2

公开(公告)日：2003-04-29

申请号：US09941023

申请日：2001-08-27

申请人： Tue Nguyen ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

发明人： Tue Nguyen ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

IPC分类号： H01L21302

CPC分类号： C23G5/00 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/76838

摘要： A system and method of selectively etching copper surfaces free of copper oxides in preparation for the deposition of an interconnecting metallic material is provided The method removes metal oxides with &bgr;-diketones, such as Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively to copper oxides. The by-products of the cleaning process are likewise volatile for removal from the system with a vacuum pressure. Since the process is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in-situ cleaning process permits a minimum amount of copper oxide to reform before the deposition of the overlying interconnection metal. In this manner, a highly conductive electrical interconnection between the copper surface and the interconnecting metal material is formed. An IC having a metal interconnection, in which the underlying copper layer is cleaned of copper oxides, in-situ with Hhfac vapor, is also provided.

公开(公告)号：US06509260B1

公开(公告)日：2003-01-21

申请号：US09906899

申请日：2001-07-16

申请人： David R. Evans ,  Sheng Teng Hsu

发明人： David R. Evans ,  Sheng Teng Hsu

IPC分类号： H01L214763

CPC分类号： H01L21/31053 ,  H01L21/76229

摘要： A method of shallow trench isolation includes preparing a substrate, including forming mesa structures thereon; forming a barrier cap on the mesa structures; forming an oxide multi-layer structure over the mesas and barrier caps, including: depositing a first oxide layer having a conventional polishing rate; depositing a second oxide layer having a low polishing rate; and depositing a third oxide layer having a conventional polishing rate, and polishing the structure to the level of the barrier cap.

摘要翻译： 浅沟槽隔离的方法包括制备衬底，包括在其上形成台面结构; 在台面结构上形成屏障盖; 在所述台面和阻挡盖上形成氧化物多层结构，包括：沉积具有常规抛光速率的第一氧化物层; 沉积具有低抛光速率的第二氧化物层; 以及沉积具有常规抛光速率的第三氧化物层，并将该结构抛光至阻挡层的高度。

公开(公告)号：US06472337B1

公开(公告)日：2002-10-29

申请号：US10020471

申请日：2001-10-30

申请人： Wei-Wei Zhuang ,  David R. Evans

发明人： Wei-Wei Zhuang ,  David R. Evans

IPC分类号： H01L2131

CPC分类号： H01L21/31625 ,  C01G25/02 ,  C01G27/02 ,  C07F7/003 ,  C23C16/405 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141

摘要： A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200° C. in a near vacuum of 0.1 mmHg. A ZOx precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.

摘要翻译： 通过化学气相沉积法制备薄膜前体的方法包括将ZCl4与H（tmhd）3溶剂和苯混合形成溶液，其中Z是从由铪和锆组成的元素组成的元素 ; 在氩气氛中回流12小时; 通过真空除去溶剂，从而产生固体化合物; 并在0.1mmHg的接近真空下在200℃升华该化合物。 用于化学气相沉积方法的ZOx前体包括从ZCl（tmhd）3和ZCl 2（tmhd）2组成的化合物组中取代的含Z化合物。

公开(公告)号：US09082700B2

公开(公告)日：2015-07-14

申请号：US13296191

申请日：2011-11-14

申请人： Sean Andrew Vail ,  David R. Evans ,  Wei Pan ,  Jong-Jan Lee

发明人： Sean Andrew Vail ,  David R. Evans ,  Wei Pan ,  Jong-Jan Lee

IPC分类号： H01L21/44 ,  H01L21/268 ,  H01G9/20 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L21/2686 ,  H01G9/2031 ,  H01G9/2059 ,  H01L21/02554 ,  H01L29/7869 ,  Y02E10/542

摘要： An ultraviolet treatment method is provided for a metal oxide electrode. A metal oxide electrode is exposed to an ultraviolet (UV) light source in a humid environment. The metal oxide electrode is then treated with a moiety having at least one anchor group, where the anchor group is a chemical group capable of promoting communication between the moiety and the metal oxide electrode. As a result, the moiety is bound to the metal oxide electrode. In one aspect the metal oxide electrode is treated with a photoactive moiety. Exposing the metal oxide electrode to the UV light source in the humid environment induces surface defects in the metal oxide electrode in the form of oxygen vacancies. In response to the humidity, atmospheric water competes favorably with oxygen for dissociative adsorption on the metal oxide electrode surface, and hydroxylation of the metal oxide electrode surface is induced.

摘要翻译： 为金属氧化物电极提供紫外线处理方法。 金属氧化物电极在潮湿环境中暴露于紫外（UV）光源。 然后用具有至少一个锚定基团的部分处理金属氧化物电极，其中锚定基团是能够促进部分和金属氧化物电极之间的连通的化学基团。 结果，该部分与金属氧化物电极结合。 在一个方面，用光活性部分处理金属氧化物电极。 在潮湿环境中将金属氧化物电极暴露于UV光源以氧空位的形式引起金属氧化物电极中的表面缺陷。 响应于湿度，大气水与氧反应，在金属氧化物电极表面上进行离解吸附，诱导金属氧化物电极表面的羟基化。

公开(公告)号：US07633108B2

公开(公告)日：2009-12-15

申请号：US11893402

申请日：2007-08-15

申请人： Tingkai Li ,  Sheng Teng Hsu ,  Wei-Wei Zhuang ,  David R. Evans

发明人： Tingkai Li ,  Sheng Teng Hsu ,  Wei-Wei Zhuang ,  David R. Evans

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/101 ,  G11C13/0007 ,  G11C2213/31 ,  H01L27/2409 ,  H01L27/2463 ,  H01L29/66143 ,  H01L29/872 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147

摘要： A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method provides a substrate; forms an MSM bottom electrode overlying the substrate; forms a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, forms an MSM top electrode overlying the semiconductor layer. The ZnOx semiconductor can be formed through a number of different processes such as spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

摘要翻译： 提供了一种用于形成具有MSM限流器的金属/半导体/金属（MSM）限流器和电阻存储器单元的方法。 该方法提供基底; 形成覆盖衬底的MSM底部电极; 形成覆盖MSM底部电极的ZnOx半导体层，其中x在约1和约2之间的范围内; 并且形成覆盖半导体层的MSM顶部电极。 可以通过旋涂，直流（DC）溅射，射频（RF）溅射，金属有机化学气相沉积（MOCVD）或原子层沉积（ALD）等多种不同的工艺形成ZnO x半导体。