公开(公告)号：US07842600B2

公开(公告)日：2010-11-30

申请号：US12364598

申请日：2009-02-03

申请人： Jong-ho Yun ,  Jong-Myeong Lee ,  Gil-heyun Choi

发明人： Jong-ho Yun ,  Jong-Myeong Lee ,  Gil-heyun Choi

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76849 ,  H01L2224/05026 ,  H01L2224/05639 ,  H01L2224/05669 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05099

摘要： Methods of forming an interlayer dielectric having an air gap are provided including forming a first insulating layer on a semiconductor substrate. The first insulating layer defines a trench. A metal wire is formed in the trench such that the metal wire is recessed beneath an upper surface of the first insulating layer. A metal layer is formed on the metal wire, wherein the metal layer includes a capping layer portion filling the recess, a upper portion formed on the capping layer portion, and an overhang portion formed on the portion of the first insulating layer adjacent to the trench protruding sideward from the upper portion. The first insulating layer is removed and a second insulating layer is formed on the semiconductor substrate to cover the metal layer, whereby an air gap is formed below the overhang portion of the metal layer. A portion of the second insulating layer is removed to expose the upper portion of the metal layer. The upper portion and the overhang portion of the metal layer are removed. A third insulating layer is formed on the semiconductor substrate from which the upper portion and the overhang portion have been removed to maintain the air gap.

摘要翻译： 提供了形成具有气隙的层间电介质的方法，包括在半导体衬底上形成第一绝缘层。 第一绝缘层限定沟槽。 在沟槽中形成金属线，使得金属线在第一绝缘层的上表面下方凹入。 在金属线上形成金属层，其中金属层包括填充凹部的覆盖层部分，形成在覆盖层部分上的上部，和形成在与沟槽相邻的第一绝缘层的部分上的突出部分 从上部侧向突出。 去除第一绝缘层，并且在半导体衬底上形成覆盖金属层的第二绝缘层，由此在金属层的伸出部分的下方形成气隙。 去除第二绝缘层的一部分以露出金属层的上部。 去除金属层的上部和外伸部分。 在半导体基板上形成第三绝缘层，从该基板上去除上部和外伸部分以保持气隙。

公开(公告)号：US07833855B2

公开(公告)日：2010-11-16

申请号：US11474544

申请日：2006-06-26

申请人： Sang-Bom Kang ,  Kyung-In Choi ,  You-Kyoung Lee ,  Seong-Geon Park ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Sang-Woo Lee

发明人： Sang-Bom Kang ,  Kyung-In Choi ,  You-Kyoung Lee ,  Seong-Geon Park ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Sang-Woo Lee

IPC分类号： H01L21/8238

CPC分类号： H01L29/6659 ,  C23C16/34 ,  C23C16/56 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/823425 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66583 ,  H01L29/7833

摘要： In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.

摘要翻译： 在形成场效应晶体管的方法中，在栅电极绝缘层上形成金属氮化物层。 可以使用由化学式Ta（NR1）（NR2R3）3表示的钽胺衍生物，其中R1，R2和R3代表H或C1-C6烷基，形成金属氮化物层。 然后可以将氮气注入到金属氮化物层中以增加该层的氮含量。

公开(公告)号：US07816255B2

公开(公告)日：2010-10-19

申请号：US12112135

申请日：2008-04-30

申请人： Kyung-In Choi ,  Gil-Heyun Choi ,  Hyun-Bae Lee ,  Jong-Won Hong ,  Jong-Myeong Lee

发明人： Kyung-In Choi ,  Gil-Heyun Choi ,  Hyun-Bae Lee ,  Jong-Won Hong ,  Jong-Myeong Lee

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76877 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03602 ,  H01L2224/05124 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/19043 ,  H01L2924/3011 ,  H01L2924/00014

摘要： Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.

摘要翻译： 提供了形成包括扩散阻挡膜的半导体器件的方法。 扩散阻挡膜包括通过使用MOCVD工艺形成并通过等离子体处理部分处理的金属氮化物。 因此，可以减小扩散阻挡膜的电阻率，并且扩散阻挡膜可能具有显着的屏障特性。

公开(公告)号：US20100151674A1

公开(公告)日：2010-06-17

申请号：US12714704

申请日：2010-03-01

申请人： Jong-Myeong Lee ,  Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Won Hong ,  Kyung-In Choi ,  Hyun-Bae Lee

发明人： Jong-Myeong Lee ,  Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Won Hong ,  Kyung-In Choi ,  Hyun-Bae Lee

IPC分类号： H01L21/768

CPC分类号： H01L21/76804 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.

摘要翻译： 用于电连接铝和铜互连的结构和形成方法使用电连接铝和铜互连的内部形状来稳定半导体金属化工艺。 为此，铜互连设置在半导体衬底上。 互连感应层和互连插入层依次形成在铜互连上以具有暴露铜互连的接触孔。 接触孔的上直径可以形成为大于其直径。 阻挡层和铝互连填充在接触孔中。 铝互连形成为不通过接触孔直接接触铜互连。

公开(公告)号：US20090298282A1

公开(公告)日：2009-12-03

申请号：US12364598

申请日：2009-02-03

申请人： Jong-Ho Yun ,  Jong-Myeong Lee ,  Gil-heyun Choi

发明人： Jong-Ho Yun ,  Jong-Myeong Lee ,  Gil-heyun Choi

IPC分类号： H01L21/60

CPC分类号： H01L21/7682 ,  H01L21/76849 ,  H01L2224/05026 ,  H01L2224/05639 ,  H01L2224/05669 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05099

摘要： Methods of forming an interlayer dielectric having an air gap are provided including forming a first insulating layer on a semiconductor substrate. The first insulating layer defines a trench. A metal wire is formed in the trench such that the metal wire is recessed beneath an upper surface of the first insulating layer. A metal layer is formed on the metal wire, wherein the metal layer includes a capping layer portion filling the recess, a upper portion formed on the capping layer portion, and an overhang portion formed on the portion of the first insulating layer adjacent to the trench protruding sideward from the upper portion. The first insulating layer is removed and a second insulating layer is formed on the semiconductor substrate to cover the metal layer, whereby an air gap is formed below the overhang portion of the metal layer. A portion of the second insulating layer is removed to expose the upper portion of the metal layer. The upper portion and the overhang portion of the metal layer are removed. A third insulating layer is formed on the semiconductor substrate from which the upper portion and the overhang portion have been removed to maintain the air gap.

摘要翻译： 提供了形成具有气隙的层间电介质的方法，包括在半导体衬底上形成第一绝缘层。 第一绝缘层限定沟槽。 在沟槽中形成金属线，使得金属线在第一绝缘层的上表面下方凹入。 在金属线上形成金属层，其中金属层包括填充凹部的覆盖层部分，形成在覆盖层部分上的上部，和形成在与沟槽相邻的第一绝缘层的部分上的突出部分 从上部侧向突出。 去除第一绝缘层，并且在半导体衬底上形成覆盖金属层的第二绝缘层，由此在金属层的伸出部分的下方形成气隙。 去除第二绝缘层的一部分以露出金属层的上部。 去除金属层的上部和外伸部分。 在半导体基板上形成第三绝缘层，从该基板上去除上部和外伸部分以保持气隙。

公开(公告)号：US20080042290A1

公开(公告)日：2008-02-21

申请号：US11679723

申请日：2007-02-27

申请人： Jong-Myeong Lee ,  Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Won Hong ,  Kyung-In Choi ,  Hyun-Bae Lee

发明人： Jong-Myeong Lee ,  Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Won Hong ,  Kyung-In Choi ,  Hyun-Bae Lee

IPC分类号： H01L23/522 ,  H01L21/311

CPC分类号： H01L21/76804 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.

摘要翻译： 用于电连接铝和铜互连的结构和形成方法使用电连接铝和铜互连的内部形状来稳定半导体金属化工艺。 为此，铜互连设置在半导体衬底上。 互连感应层和互连插入层依次形成在铜互连上以具有暴露铜互连的接触孔。 接触孔的上直径可以形成为大于其直径。 阻挡层和铝互连填充在接触孔中。 铝互连形成为不通过接触孔直接接触铜互连。

公开(公告)号：US20060240665A1

公开(公告)日：2006-10-26

申请号：US11474544

申请日：2006-06-26

申请人： Sang-Bom Kang ,  Kyung-In Choi ,  You-Kyoung Lee ,  Seong-Geon Park ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Sang-Woo Lee

发明人： Sang-Bom Kang ,  Kyung-In Choi ,  You-Kyoung Lee ,  Seong-Geon Park ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Sang-Woo Lee

IPC分类号： H01L21/44

CPC分类号： H01L29/6659 ,  C23C16/34 ,  C23C16/56 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/823425 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66583 ,  H01L29/7833

摘要： In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.

摘要翻译： 在形成场效应晶体管的方法中，在栅电极绝缘层上形成金属氮化物层。 由化学式Ta（NR 1）2（NR 2 R 3）3表示的钽胺衍生物，在 其中R 1，R 2和R 3均表示H或C 1 -C 6 - / SUB烷基可以用于形成金属氮化物层。 然后可以将氮气注入到金属氮化物层中以增加该层的氮含量。

公开(公告)号：US20060163677A1

公开(公告)日：2006-07-27

申请号：US11386644

申请日：2006-03-22

申请人： Seong-Jun Heo ,  Sun-Pil Youn ,  Sung-Man Kim ,  Si-Young Choi ,  Gil-Heyun Choi ,  Ja-Hum Ku ,  Chang-Won Lee ,  Jong-Myeong Lee ,  Kwon-Sun Ryu

发明人： Seong-Jun Heo ,  Sun-Pil Youn ,  Sung-Man Kim ,  Si-Young Choi ,  Gil-Heyun Choi ,  Ja-Hum Ku ,  Chang-Won Lee ,  Jong-Myeong Lee ,  Kwon-Sun Ryu

IPC分类号： H01L29/94

CPC分类号： H01L21/28061 ,  H01L21/28088 ,  H01L29/4941 ,  H01L29/4966 ,  H01L29/6659 ,  H01L29/7833

摘要： Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.

公开(公告)号：US20050266684A1

公开(公告)日：2005-12-01

申请号：US10920482

申请日：2004-08-18

申请人： Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Kyung-In Choi

发明人： Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Kyung-In Choi

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/76864

摘要： A method forming a tungsten contact can include forming a contact hole in an interlayer dielectric layer to expose a portion of an underlying silicon based substrate and to form a side wall of the contact hole. A tungsten silicide layer can be formed on at least on the exposed portion of the substrate. A tungsten nitride layer can be conformally formed on a surface of the interlayer dielectric layer, on the tungsten silicide layer and on the side wall. A contact tungsten layer can be formed on the tungsten nitride layer to fill the contact hole. Related apparatus and contacts are also disclosed.

摘要翻译： 形成钨接触的方法可以包括在层间电介质层中形成接触孔以暴露下面的硅基衬底的一部分并形成接触孔的侧壁。 至少在衬底的暴露部分上可以形成硅化钨层。 氮化钨层可以共形地形成在层间电介质层的表面上，硅化钨层和侧壁上。 可以在氮化钨层上形成接触钨层以填充接触孔。 还公开了相关装置和接触。

公开(公告)号：US06602782B2

公开(公告)日：2003-08-05

申请号：US09862937

申请日：2001-05-22

申请人： Myoung-bum Lee ,  Jong-Myeong Lee ,  Byung-hee Kim ,  Gil-heyun Choi

发明人： Myoung-bum Lee ,  Jong-Myeong Lee ,  Byung-hee Kim ,  Gil-heyun Choi

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76882 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a metal interconnects include forming an electrically insulating layer having a contact hole therein, on a substrate. A step is also performed to form an electrically conductive seed layer. The seed layer extends on a sidewall of the contact hole and on a portion of an upper surface of the electrically insulating layer extending adjacent the contact hole. The seed layer is sufficiently thick along an upper portion of the sidewall and sufficiently thin along a lower portion of the sidewall that an upper portion of the contact hole is partially constricted by the seed layer and a constricted contact hole is thereby defined. An anti-nucleation layer is deposited on a portion of the seed layer that extends outside the constricted contact hole. The constricted contact hole is used as a mask to inhibit deposition of the anti-nucleation layer adjacent a bottom of the constricted contact hole. A metal liner is then formed on a portion of the electrically conductive seed layer that defines a sidewall of the constricted contact hole. Next, a metal interconnect layer is reflowed into the constricted contact hole to thereby fill and bury the contact hole.

摘要翻译： 形成金属互连的方法包括在基板上形成其中具有接触孔的电绝缘层。 还进行步骤以形成导电种子层。 种子层在接触孔的侧壁上延伸，并且在邻近接触孔延伸的电绝缘层的上表面的一部分上延伸。 种子层沿着侧壁的上部足够厚，并且沿着侧壁的下部足够薄，接触孔的上部被种子层部分地收缩，从而限定了收缩的接触孔。 在种子层的在收缩的接触孔外延伸的部分上沉积抗成核层。 收缩的接触孔用作掩模以抑制邻接于缩小的接触孔的底部的防着色层的沉积。 然后在导电种子层的限定收缩的接触孔的侧壁的部分上形成金属衬垫。 接下来，将金属互连层回流到收缩的接触孔中，从而填充并埋入接触孔。