Light emitting diode having electrode extensions for current spreading
    63.
    发明授权
    Light emitting diode having electrode extensions for current spreading 有权
    具有用于电流扩展的电极延伸的发光二极管

    公开(公告)号:US08680559B2

    公开(公告)日:2014-03-25

    申请号:US12941536

    申请日:2010-11-08

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01L33/20

    摘要: An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

    摘要翻译: 本发明的一个示例性实施例公开了一种发光二极管,其包括具有彼此相对的第一边缘和第二边缘的基板,设置在基板上的发光结构,所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘,布置在第一边缘附近的第一电极焊盘,布置在第二半导体层上的多个第二电极焊盘,布置在第二半导体层上的第二电极焊盘 在第二边缘附近,多个第一延伸部,每个第一延伸部从第一电极焊盘延伸,以及多个第二延伸部,每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分,其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外,第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分,其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    64.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 有权
    具有电极板的发光二极管芯片

    公开(公告)号:US20130234192A1

    公开(公告)日:2013-09-12

    申请号:US13885777

    申请日:2011-02-28

    IPC分类号: H01L33/46

    摘要: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    摘要翻译: 本文公开了包括电极焊盘的LED芯片。 LED芯片包括:第一导电型半导体层,第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘,由此增加发光面积。

    LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
    66.
    发明申请
    LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
    具有改进的光提取效率的发光二极管

    公开(公告)号:US20130134867A1

    公开(公告)日:2013-05-30

    申请号:US13816572

    申请日:2011-02-19

    IPC分类号: H05B33/06

    摘要: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.

    摘要翻译: 公开了具有改进的光提取效率的发光二极管(LED)。 LED包括位于基板上并具有第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构。 第一电极焊盘电连接到第一导电类型半导体层。 第二电极焊盘位于衬底上。 绝缘反射层覆盖发光结构的一部分,并且位于第二电极焊盘下方,使得第二电极焊盘与发光结构间隔开。 至少一个上延伸部连接到第二电极焊盘以与第二导电型半导体层电连接。 此外,光提取元件的图案位于第二导电类型半导体层上。

    Light emitting diode for AC operation
    68.
    发明授权
    Light emitting diode for AC operation 有权
    用于交流操作的发光二极管

    公开(公告)号:US08232565B2

    公开(公告)日:2012-07-31

    申请号:US12607644

    申请日:2009-10-28

    IPC分类号: H01L33/00

    摘要: The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

    摘要翻译: 本发明公开了一种发光二极管(LED),其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元,每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元,每个包括至少一个发光单元,每个全波发光单元包括分别在其两端形成的第三和第四端子。 每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子,并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子 波发光单元。 此外,第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间,并且第二半波发光单元 串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

    Light emitting diode having extensions of electrodes for current spreading
    69.
    发明授权
    Light emitting diode having extensions of electrodes for current spreading 有权
    具有用于电流扩散的电极延伸的发光二极管

    公开(公告)号:US08076688B2

    公开(公告)日:2011-12-13

    申请号:US12442267

    申请日:2006-09-25

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01L33/20

    摘要: Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.

    摘要翻译: 公开了一种具有用于改善电流扩展的电极延伸的发光二极管。 发光二极管包括形成在基板上的下半导体层,上半导体层和有源层。 上半导体层位于下半导体层之上,使得下半导体层的边缘区域被暴露,并且具有从与基板的角部相邻的边缘区域中的顺时针或逆时针方向的位置与对角线方向平行缩进的凹口 以暴露下半导体层。 凹痕的远端彼此间隔开。 同时,在与半导体层的第一角对应的下半导体层的露出区上形成下电极,在半导体层上的透明电极层上形成上电极。 在下半导体层的暴露的边缘区域和通过凹口暴露的下半导体层的区域上形成从下电极延伸的下延伸部。 在透明电极层上形成从上部电极延伸的上延伸部。 下延伸和上延伸改善电流扩散,特别是在具有大面积的发光二极管中。

    Light emitting device with light emitting cells arrayed
    70.
    发明授权
    Light emitting device with light emitting cells arrayed 有权
    具有排列发光单元的发光装置

    公开(公告)号:US08054002B2

    公开(公告)日:2011-11-08

    申请号:US12088906

    申请日:2006-12-05

    IPC分类号: H05B37/22

    摘要: The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.

    摘要翻译: 本发明涉及一种发光装置。 根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路,其中所述桥式整流电路在节点之间包括多个二极管。 在制造其中内置有桥式整流电路的交流发光装置的情况下,本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置 一定的尺寸并控制其数量。