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    Bipolar transistor with silicided sub-collector
    61.
    发明授权
    Bipolar transistor with silicided sub-collector 有权
    双极晶体管，带硅化子集电极

    公开(公告)号：US07679164B2

    公开(公告)日：2010-03-16

    申请号：US11620242

    申请日：2007-01-05

    申请人： Francois Pagette ,  Christian Lavoie ,  Anna Topol

    发明人： Francois Pagette ,  Christian Lavoie ,  Anna Topol

    IPC分类号： H01L27/102

    CPC分类号： H01L29/737 ,  H01L29/0821 ,  H01L29/66242

    摘要： Embodiments of the invention provide a semiconductor device including a collector in an active region; a first and a second sub-collector, the first sub-collector being a heavily doped semiconductor material adjacent to the collector and the second sub-collector being a silicided sub-collector next to the first sub-collector; and a silicided reach-through in contact with the second sub-collector, wherein the first and second sub-collectors and the silicided reach-through provide a continuous conductive pathway for electrical charges collected by the collector from the active region. Embodiments of the invention also provide methods of fabricating the same.

    摘要翻译： 本发明的实施例提供了一种在有源区域中包括集电极的半导体器件; 第一和第二子集电极，所述第一子集电极是与所述集电极相邻的重掺杂半导体材料，所述第二子集电极是靠近所述第一子集电极的硅化副集电极; 以及与所述第二子集电器接触的硅化物到达通道，其中所述第一和第二子集电极和所述硅化物到达通道为所述集电器从所述有源区域收集的电荷提供连续的导电路径。 本发明的实施例还提供了制造该方法的方法。

    Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby
    68.
    发明授权
    Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby 有权
    自对准金属与Ge形成的基板和由此形成的结构形成接触

    公开(公告)号：US07449782B2

    公开(公告)日：2008-11-11

    申请号：US10838378

    申请日：2004-05-04

    申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

    发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

    IPC分类号： H01L29/40

    CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

    摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

    摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

    REDUCTION OF SILICIDE FORMATION TEMPERATURE ON SiGe CONTAINING SUBSTRATES
    70.
    发明申请
    REDUCTION OF SILICIDE FORMATION TEMPERATURE ON SiGe CONTAINING SUBSTRATES 有权
    在含SiGe衬底上减少硅化物形成温度

    公开(公告)号：US20080246120A1

    公开(公告)日：2008-10-09

    申请号：US12120854

    申请日：2008-05-15

    申请人： Cyril Cabral ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

    发明人： Cyril Cabral ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

    IPC分类号： H01L29/161

    CPC分类号： H01L21/28518

    摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

    摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。