公开(公告)号：US20050040420A1

公开(公告)日：2005-02-24

申请号：US10958911

申请日：2004-10-04

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

公开(公告)号：US06791118B2

公开(公告)日：2004-09-14

申请号：US10602099

申请日：2003-06-23

申请人： Chisato Furukawa ,  Hideto Sugawara ,  Nobuhir Suzuki

发明人： Chisato Furukawa ,  Hideto Sugawara ,  Nobuhir Suzuki

IPC分类号： H01L3100

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/08 ,  H01L33/501 ,  H01L33/508 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO in stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.

摘要翻译： 公开了通过选择性生长和发光效率高而形成的半导体发光元件，其中在蓝宝石衬底上堆叠/形成由ELO生长的至少一个GaN基层和用于转换紫外线的荧光物质 在这种情况下使用的选择性生长掩模材料层中包含可见光。 由于该荧光物质将紫外光转换成可见光，因此在中心发光型和紫外线发光型发光元件中的任意一种中增加紫外线对荧光物质的结合效率。 通过进一步将荧光物质包含在钝化膜中，效率进一步提高。

公开(公告)号：US06586773B2

公开(公告)日：2003-07-01

申请号：US10001083

申请日：2001-10-31

申请人： Ryo Saeki ,  Hideto Sugawara ,  Yukio Watanabe ,  Tamotsu Jitosho

发明人： Ryo Saeki ,  Hideto Sugawara ,  Yukio Watanabe ,  Tamotsu Jitosho

IPC分类号： H01L2715

CPC分类号： H01L33/16 ,  H01L33/0079 ,  H01L33/30

摘要： A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on said first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in a crystal orientation, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.

摘要翻译： 一种半导体发光器件，包括第一导电类型的第一衬底，设置在所述第一衬底上并基本上由第一导电类型的GaP材料组成的第一接合层，设置在第一接合层上的第二接合层， 与具有第一导电类型的晶体取向的第一结合层重合，并且基本上由由式InxGayP表示的材料组成，其中0 <= x，y <= 1和x + y = 1，以及光 依次设置在第二接合层上的包含第一包层，有源层和第二包覆层的发光层，所述有源层和第一和第二包层中的每一个基本上由式In x Ga y Al z P ，其中x + y + z = 1，0 <= x，y，z <= 1。

公开(公告)号：US08541772B2

公开(公告)日：2013-09-24

申请号：US13223853

申请日：2011-09-01

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/007

摘要： According to one embodiment, a nitride semiconductor stacked structure having a first surface includes a substrate, a first buffer layer, a first crystal layer, a second buffer layer and a second crystal layer. A step portion is provided in the substrate and includes an upper surface, a lower surface, and a side surface between the upper surface and the lower surface. The first buffer layer includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦1) and covers the lower surface and the side surface. The first crystal layer is provided on the first buffer layer, includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦0.05), and has an upper surface provided above the upper surface of the substrate. The second buffer layer includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦1) and continuously covers the upper surface of the first crystal layer and the upper surface of the substrate. The second crystal layer covers the second buffer layer, includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦0.05), and has the first surface.

摘要翻译： 根据一个实施例，具有第一表面的氮化物半导体层叠结构包括基板，第一缓冲层，第一晶体层，第二缓冲层和第二晶体层。 台阶部设置在基板中，并且包括上表面，下表面和上表面与下表面之间的侧表面。 第一缓冲层包括InsAltGa1-s-tN（0 @ s @ 0.05,0 @ t @ 1）并覆盖下表面和侧表面。 第一晶体层设置在第一缓冲层上，包括InsAltGa1-s-tN（0 @ s @ 0.05,0 @ t @ 0.05），并且在衬底的上表面上方具有上表面。 第二缓冲层包括InsAltGa1-s-tN（0 @ s @ 0.05,0 @ t @ 1），并连续地覆盖第一晶体层的上表面和衬底的上表面。 第二晶体层覆盖第二缓冲层，包括InsAltGa1-s-tN（0 @ s @ 0.05,0 @ t @ 0.05），并具有第一表面。

公开(公告)号：US20110309329A1

公开(公告)日：2011-12-22

申请号：US12952758

申请日：2010-11-23

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L29/06

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/20

摘要： According to one embodiment, a nitride semiconductor device includes a substrate, an Alx1Ga1-x1N first buried layer, an InyAlzGa1-y-zN buried layer and an Alx2Ga1-x2N second buried layer. The substrate has protrusions formed in an in-plane direction on a first major surface, and a depression between adjacent ones of the protrusions. The first buried layer is formed on the depression and one of the protrusions. The InyAlzGa1-y-zN buried layer is formed on the first buried layer. The second buried layer is formed on the InyAlzGa1-y-zN buried layer. A portion of the first buried layer formed on the depression and a portion of the first buried layer formed on the one of the protrusions are not connected to each other. A portion of the InyAlzGa1-y-zN buried layer formed above the depression and a portion of the InyAlzGa1-y-zN buried layer formed above the one of the protrusions are connected to each other.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底，Al x Ga 1-x N 1第一掩埋层，In y Al z Ga 1-y-z N埋层和Al x Ga 1-x 2 N第二掩埋层。 基板具有在第一主表面上沿面内方向形成的突起，以及相邻突起之间的凹陷。 第一掩埋层形成在凹部和突起之一中。 InyAlzGa1-y-zN掩埋层形成在第一掩埋层上。 在InyAlzGa1-y-zN掩埋层上形成第二掩埋层。 形成在凹部上的第一掩埋层的一部分和形成在一个突起上的第一掩埋层的一部分没有彼此连接。 形成在凹部上方的InyAlzGa1-y-zN掩埋层的一部分和形成在上述一个突起上的InyAlzGa1-y-zN掩埋层的一部分彼此连接。

公开(公告)号：US07714350B2

公开(公告)日：2010-05-11

申请号：US11396922

申请日：2006-04-04

申请人： Hideto Sugawara ,  Chie Hongo

发明人： Hideto Sugawara ,  Chie Hongo

IPC分类号： H01L33/00

CPC分类号： H01L29/7371 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/66318 ,  H01L29/66462 ,  H01L33/025 ,  H01L33/305 ,  H01S5/22 ,  H01S5/32341

摘要： A gallium nitride based semiconductor device comprises: a first gallium nitride based semiconductor film doped with magnesium; and a second gallium nitride based semiconductor film provided on the first gallium nitride based semiconductor film and doped with magnesium. The first gallium nitride based semiconductor film has substantially flat distributions of magnesium concentration and hydrogen atom concentration, and the magnesium concentration is higher than the hydrogen atom concentration. The second gallium nitride based semiconductor film has a first region in which the magnesium concentration decreases and the hydrogen atom concentration increases toward the surface, and the magnesium concentration in the first region is higher than the hydrogen atom concentration in the first region and higher than the magnesium concentration in the first gallium nitride based semiconductor film.

摘要翻译： 氮化镓基半导体器件包括：掺杂有镁的第一氮化镓基半导体膜; 以及设置在第一氮化镓基半导体膜上并掺杂有镁的第二氮化镓基半导体膜。 第一氮化镓基半导体膜具有镁浓度和氢原子浓度基本平坦的分布，并且镁浓度高于氢原子浓度。 第二氮化镓系半导体膜具有其中镁浓度降低并且氢原子浓度朝向表面增加的第一区域，并且第一区域中的镁浓度高于第一区域中的氢原子浓度，并且高于 第一氮化镓基半导体膜中的镁浓度。

公开(公告)号：US07550368B2

公开(公告)日：2009-06-23

申请号：US11439579

申请日：2006-05-24

申请人： Hideto Sugawara ,  Tsunenori Hiratsuka

发明人： Hideto Sugawara ,  Tsunenori Hiratsuka

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： H01L29/205 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/007

摘要： A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature deposited layer formed on the group-III nitride layer and made of nitride in which group-III element composition is continuously changed, and a second group-III nitride layer formed on the graded low-temperature deposited layer.

摘要翻译： III族氮化物半导体堆叠包括单晶衬底，形成在单晶衬底的主表面上的第一III族氮化物层，形成在III族氮化物层上的渐变低温沉积层，并制成 其中组III族元素组成连续变化的氮化物和形成在渐变低温沉积层上的第二III族氮化物层。

公开(公告)号：US20090101935A1

公开(公告)日：2009-04-23

申请号：US12250767

申请日：2008-10-14

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/3203 ,  H01S2304/12

摘要： A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.

摘要翻译： 氮化物半导体包括：具有包括第一晶体极性表面和与第一晶体极性表面不同的第二晶体极性表面的主表面的基板; 以及设置在主表面上并具有单晶极性的单极性层。

公开(公告)号：US20080268558A1

公开(公告)日：2008-10-30

申请号：US11875759

申请日：2007-10-19

申请人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

发明人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

公开(公告)号：US07179671B2

公开(公告)日：2007-02-20

申请号：US10945707

申请日：2004-09-21

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： A method of manufacturing an LED forms an InGaN active layer on a substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes a nickel layer for forming an ohmic contact with a p-GaN layer, a molybdenum having a barrier function of preventing diffusion of impurities, an aluminum layer as a high-reflection electrode, a titanium layer having a barrier function, and a gold layer for improving the contact with a submount on a lead frame. Forming a p-side electrode with this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 制造LED的方法在衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括用于与p-GaN层形成欧姆接触的镍层，具有防止杂质扩散的阻挡功能的钼，作为高反射电极的铝层，具有阻挡功能的钛层 ，以及用于改善与引线框架上的基座的接触的金层。 形成具有该五层结构的p侧电极同时实现欧姆接触和高反射率。