Abstract:
A host that is coupled to a memory device is configured to read a status register of the memory device to determine if the memory device supports host controlled enablement of automatic background operations. The memory device responds to the host regarding whether the memory device supports host controlled enablement of automatic background operations. The host can enable the automatic background operations if the memory device supports this feature. The host can then set a time period in the memory device that is indicative of when the memory device can automatically perform the background operations.
Abstract:
The present disclosure includes apparatuses and methods for command queuing. A number of embodiments include receiving a queued command request at a memory system from a host, sending a command response from the memory system to the host that indicates the memory system is ready to receive a command in a command queue of the memory system, and receiving, in response to sending the command response, a command descriptor block for the command at the memory system from the host.
Abstract:
A method and system are disclosed in which a first non-volatile memory includes blocks that store data, and a second memory that stores overhead information related to the blocks storing the data. The amount of the second memory storing the overhead information related to the at least one block of the plurality of blocks is varied.
Abstract:
Systems, apparatuses, and methods related to security management for a ferroelectric memory device are described. An example method can include receiving, at a memory controller and from a host, a command and firmware data. The memory controller can manage a non-volatile memory device, such as a ferroelectric memory device, and the host and the memory controller can communicate using a compute express link (CXL) protocol. The command can be executed to update firmware stored on the non-volatile memory device. The method can further include accessing a first public key from the non-volatile memory device. The method can further include validating the first public key with a second public key within the firmware data. The method can further include validating the firmware data. The method can further include verifying a security version of the firmware data. The method can further include updating the non-volatile memory device with the firmware data.
Abstract:
A variety of applications can include a memory device implementing a dual compression scheme. A memory subsystem of the memory device can be arranged into multiple regions. A first region of the memory subsystem can be used to store non-compressible data. A second region can be used to store compressible data. The second region can have a first subregion and a second subregion. The first subregion can be used to accept compressible data as non-compressed data corresponding to a compression ratio being less than a threshold compression ratio. The second subregion can be used to accept compressed data corresponding to a compression ratio being greater than the threshold compression ratio. Additional apparatus, systems, and methods are disclosed.
Abstract:
An apparatus can include a number of memory devices and a memory controller coupled to one or more of the number of memory devices. The memory controller can include a row hammer detector. The memory controller can be configured increment for a first time period a row counter in a first data structure and a refresh counter. The memory controller can be configured to increment for a second time period a row counter in a second data structure and the refresh counter. The memory controller can be configured to determine that a value of the refresh counter exceeds a refresh threshold and responsive to the determination that the value of the refresh counter exceeds the refresh threshold, issue a notification.
Abstract:
An apparatus can include a number of memory devices and a memory controller coupled to one or more of the number of memory devices. The memory controller can include a row hammer detector. The memory controller can be configured increment for a first time period a row counter in a first data structure and a refresh counter. The memory controller can be configured to increment for a second time period a row counter in a second data structure and the refresh counter. The memory controller can be configured to determine that a value of the refresh counter exceeds a refresh threshold and responsive to the determination that the value of the refresh counter exceeds the refresh threshold, issue a notification.
Abstract:
Methods, systems, and devices for techniques for managing offline identity upgrades are described. A memory system may receive a command to update a device identifier for a device identifier composition engine (DICE) associated with the memory system. The memory system may generate an updated device identifier, at a first software layer of a set of software layers of the DICE, based on receiving the command. The memory system may decrypt a device specific key (DSK) stored at a read-only memory device of the memory system based on the received command, and sign the updated device identifier using the DSK based on decrypting the DSK. The memory system may execute one or more operations associated with the first software layer of the set of software layers of the DICE based on the signed updated device identifier.
Abstract:
Systems, methods, and apparatus for memory device security and row hammer mitigation are described. A control mechanism may be implemented in a front-end and/or a back-end of a memory sub-system to refresh rows of the memory. A row activation command having a row address at control circuitry of a memory sub-system and incrementing a first count of a row counter corresponding to the row address stored in a content addressable memory (CAM) of the memory sub-system may be received. Control circuitry may determine whether the first count is greater than a row hammer threshold (RHT) minus a second count of a CAM decrease counter (CDC); the second count may be incremented each time the CAM is full. A refresh command to the row address may be issued when a determination is made that the first count is greater than the RHT minus the second count.
Abstract:
A method can include performing at least one glitch resistance operation and detecting, by a circuit included in a glitch detector coupled via a connection matrix to a first processing unit, an indication of a glitch on a memory system. The method can include notifying, via the connection matrix, at least a second processing unit of the detected indication of the glitch. The method can include subsequent to notifying at least the second processing unit, transmitting via the at least the second processing unit a glitch confirmation signal.