公开(公告)号：US20220198902A1

公开(公告)日：2022-06-23

申请号：US17147508

申请日：2021-01-13

Applicant: Micron Technology, Inc.

Inventor： Chunhua Yao ,  Priya Vemparala Guruswamy ,  Xiao Li ,  Cipriana Forgy ,  Anshika Sharma

IPC: G08B21/04 ,  G08B21/18 ,  G06F9/54

Abstract: Methods, systems, and non-transitory machine-readable media associated with an emergency assistance response are described. A system for an emergency assistance response can include a non-transitory machine-readable medium comprising a processing resource in communication with a memory resource having instructions executable to receive signaling associated with monitored health data. The instructions can be executable to track the received signaling, identify, output data representative of abnormal health data based on the tracked received signaling, and transmit the output data to a wearable device. The wearable device can receive the output data representative of the abnormal health data, provide a prompt via a user interface to a wearer of the wearable device associated with the abnormal health data, determine a response to the abnormal health data based on a reply or non-reply from the wearer via the user interface, and transmit the response to the processing resource.

公开(公告)号：US20220169285A1

公开(公告)日：2022-06-02

申请号：US17109501

申请日：2020-12-02

Applicant: Micron Technology, Inc.

Inventor： Amy Rae Griffin ,  Xiao Li ,  Maria Pat F. Chavarria ,  Alpha Chavez Labiano

IPC: B60W60/00 ,  B60W30/16 ,  B60W30/14

Abstract: Systems, methods, and apparatus related to cruise control for a vehicle. In one approach, speed for a first vehicle is controlled in a first mode using data from sensors. The speed is controlled while keeping at least a minimum distance from a second vehicle being followed by the first vehicle. In response to determining that data from the sensors is not usable to control the first vehicle (e.g., the data cannot be used to measure the minimum distance), the first vehicle changes from the first mode to a second mode. In the second mode, the first vehicle maintains a constant speed and/or obtains additional data from sensors and/or computing devices located externally to the first vehicle. In another approach, the additional data can additionally or alternatively be obtained from a mobile device of a passenger of the first vehicle. The additional data is used to maintain a safe minimum distance from the second vehicle.

公开(公告)号：US11342265B2

公开(公告)日：2022-05-24

申请号：US16702222

申请日：2019-12-03

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Lifang Xu ,  Rita J. Klein ,  Xiao Li ,  Everett A. McTeer

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/00 ,  H01L21/768 ,  H01L27/11529 ,  H01L27/11556

Abstract: An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.

公开(公告)号：US20200350224A1

公开(公告)日：2020-11-05

申请号：US16936639

申请日：2020-07-23

Applicant: Micron Technology, Inc.

Inventor： Steven K. Groothuis ,  Jian Li ,  Haojun Zhang ,  Paul A. Silvestri ,  Xiao Li ,  Shijian Luo ,  Luke G. England ,  Brent Keeth ,  Jaspreet S. Gandhi

IPC: H01L23/36 ,  H01L25/00 ,  H01L23/367 ,  H01L25/065 ,  H01L25/18 ,  H01L23/373 ,  H01L23/42

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

公开(公告)号：US10559495B2

公开(公告)日：2020-02-11

申请号：US16199788

申请日：2018-11-26

Applicant: Micron Technology, Inc.

Inventor： Andrew M. Bayless ,  James M. Derderian ,  Xiao Li

IPC: H01L21/304 ,  H01L21/306 ,  H01L23/28 ,  H01L21/768 ,  H01L21/02 ,  H01L23/29 ,  H01L21/56 ,  H01L23/31

Abstract: A method for processing semiconductor dice comprises removing material from a surface of a semiconductor wafer to create a pocket surrounded by a sidewall at a lateral periphery of the semiconductor wafer, forming a film on a bottom of the pocket and securing semiconductor dice to the film in mutually spaced locations. A dielectric molding material is placed in the pocket over and between the semiconductor dice, material is removed from another surface of the semiconductor wafer to expose the film, bond pads of the semiconductor dice are exposed, redistribution layers in electrical communication with the bond pads of associated semiconductor dice are formed, and the redistribution layers and associated semiconductor dice are singulated along spaces between the semiconductor dice.

公开(公告)号：US10438928B2

公开(公告)日：2019-10-08

申请号：US14626575

申请日：2015-02-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Sameer S. Vadhavkar ,  Xiao Li ,  Anilkumar Chandolu

IPC: H01L23/34 ,  H01L25/065 ,  H01L23/367

Abstract: Apparatuses and methods for semiconductor die heat dissipation are described. For example, an apparatus for semiconductor die heat dissipation may include a substrate and a heat spreader. The substrate may include a thermal interface layer disposed on a surface of the substrate, such as disposed between the substrate and the heat spreader. The heat spreader may include a plurality of substrate-facing protrusions in contact with the thermal interface layer, wherein the plurality of substrate-facing protrusions are disposed at least partially through the thermal interface layer.

公开(公告)号：US10424531B2

公开(公告)日：2019-09-24

申请号：US15938305

申请日：2018-03-28

Applicant: Micron Technology, Inc.

Inventor： Bradley R. Bitz ,  Xiao Li ,  Jaspreet S. Gandhi

IPC: H01L23/42 ,  H01L25/065 ,  H01L23/427 ,  H01L23/46 ,  H01L23/473 ,  H01L23/433

Abstract: Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.

公开(公告)号：US20190198388A1

公开(公告)日：2019-06-27

申请号：US16199788

申请日：2018-11-26

Applicant: Micron Technology, Inc.

Inventor： Andrew M. Bayless ,  James M. Derderian ,  Xiao Li

IPC: H01L21/768 ,  H01L23/29 ,  H01L21/02

CPC classification number: H01L21/76834 ,  H01L21/02041 ,  H01L21/561 ,  H01L21/568 ,  H01L23/298 ,  H01L23/3128

Abstract: A method for processing semiconductor dice comprises removing material from a surface of a semiconductor wafer to create a pocket surrounded by a sidewall at a lateral periphery of the semiconductor wafer, forming a film on a bottom of the pocket and securing semiconductor dice to the film in mutually spaced locations. A dielectric molding material is placed in the pocket over and between the semiconductor dice, material is removed from another surface of the semiconductor wafer to expose the film, bond pads of the semiconductor dice are exposed, redistribution layers in electrical communication with the bond pads of associated semiconductor dice are formed, and the redistribution layers and associated semiconductor dice are singulated along spaces between the semiconductor dice.

公开(公告)号：US20180308785A1

公开(公告)日：2018-10-25

申请号：US16020567

申请日：2018-06-27

Applicant: Micron Technology, Inc.

Inventor： Sameer S. Vadhavkar ,  Xiao Li ,  Steven K. Groothuis ,  Jian Li ,  Jaspreet S. Gandhi ,  James M. Derderian ,  David R. Hembree

IPC: H01L23/44 ,  H01L23/367 ,  H01L25/00 ,  H01L23/00 ,  H01L25/18 ,  H01L23/373 ,  H01L21/56

CPC classification number: H01L23/44 ,  H01L21/50 ,  H01L21/563 ,  H01L23/04 ,  H01L23/3675 ,  H01L23/3736 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/1134 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8388 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/156 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1815 ,  H01L2924/0715 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/00

Abstract: Method for packaging a semiconductor die assemblies. In one embodiment, a method is directed to packaging a semiconductor die assembly having a first die and a plurality of second dies arranged in a stack over the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies. The method can comprise coupling a thermal transfer structure to the peripheral region of the first die and flowing an underfill material between the second dies. The underfill material is flowed after coupling the thermal transfer structure to the peripheral region of the first die such that the thermal transfer structure limits lateral flow of the underfill material.

公开(公告)号：US20180130773A1

公开(公告)日：2018-05-10

申请号：US15345973

申请日：2016-11-08

Applicant: Micron Technology, Inc.

Inventor： Bradley R. Bitz ,  Xiao Li

IPC: H01L25/065 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L25/0657 ,  H01L21/4882 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/367 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06586 ,  H01L2225/06589

Abstract: A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies and a package substrate carrying the first and second semiconductor dies. The second semiconductor die includes a first peripheral portion extending laterally outward beyond a first edge surface of the first semiconductor die. Similarly, the package substrate includes a second peripheral portion extending laterally outward beyond a second edge surface of the second semiconductor die. The semiconductor die assembly further includes a first volume of molded underfill material between the first and second semiconductor dies, a second volume of molded underfill material between the package substrate and the second semiconductor die, a first molded peripheral structure laterally adjacent to the first edge surface of the first semiconductor die, and a second molded peripheral structure laterally adjacent to the second edge surface of the second semiconductor die.