公开(公告)号：US20050206887A1

公开(公告)日：2005-09-22

申请号：US11128352

申请日：2005-05-13

申请人： Hiroshi Morioka ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Yukio Kembo ,  Hidetoshi Nishiyama ,  Kazuhiko Matsuoka ,  Yoshiharu Shigyo

发明人： Hiroshi Morioka ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Yukio Kembo ,  Hidetoshi Nishiyama ,  Kazuhiko Matsuoka ,  Yoshiharu Shigyo

IPC分类号： G01N21/00 ,  G01N21/94 ,  G01N21/95 ,  G01N21/956 ,  G01R31/308 ,  H01J37/00 ,  H01L21/00 ,  H01L21/66 ,  H01L21/68

CPC分类号： H01L21/681 ,  B82Y15/00 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/95623 ,  G01N2021/8822 ,  G01R31/308 ,  H01J37/00 ,  H01J2237/022 ,  H01J2237/0225 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12

摘要： An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a detection optical unit which detects light from the specimen illuminated by the laser with an image sensor while the table is moving, and a signal processor. The signal processor processes a signal outputted from the image sensor of the detection optical unit and converted to a digital signal and extracts defects of the specimen by comparing the converted digital signal with a reference digital signal. A display unit displays information of defects extracted by the signal processor.

摘要翻译： 用于检测试样缺陷的装置和方法包括照射光学单元，其将激光倾斜地突出到在一个方向上在一个方向上比在横向方向上更长的区域，安装样本的台单元， 可移动的检测光学单元，检测光学单元，其在桌子移动时利用图像传感器检测由激光照射的样本的光，以及信号处理器。 信号处理器处理从检测光学单元的图像传感器输出的信号并转换为数字信号，并通过将转换的数字信号与参考数字信号进行比较来提取样本的缺陷。 显示单元显示由信号处理器提取的缺陷的信息。

公开(公告)号：US06931620B2

公开(公告)日：2005-08-16

申请号：US10419141

申请日：2003-04-21

申请人： Hidetoshi Nishiyama ,  Mari Nozoe ,  Hiroyuki Shinada

发明人： Hidetoshi Nishiyama ,  Mari Nozoe ,  Hiroyuki Shinada

IPC分类号： G01N23/20 ,  G01N21/95 ,  G01N21/956 ,  G01N23/203 ,  G01N23/225 ,  G01N27/04 ,  G01N27/22 ,  G01R1/06 ,  G01R31/302 ,  G01R31/307 ,  G01R31/311 ,  G06T7/00 ,  H01J37/22 ,  H01J37/26 ,  H01J37/28 ,  H01L21/66 ,  H01L31/0336 ,  G06F17/50

CPC分类号： G01N23/203 ,  G01N21/9501 ,  G01N23/225 ,  G01N2021/95615 ,  G01R31/307 ,  G01R31/311 ,  G06T7/001 ,  G06T2207/30148 ,  H01J37/268 ,  H01J37/28 ,  H01J2237/2817

摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacity are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.

摘要翻译： 通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。 产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。 另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和 确定电容量与检查图像中的电容量一致。 通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。

公开(公告)号：US06894773B2

公开(公告)日：2005-05-17

申请号：US09805188

申请日：2001-03-14

申请人： Hiroshi Morioka ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Yukio Kembo ,  Hidetoshi Nishiyama ,  Kazuhiko Matsuoka ,  Yoshiharu Shigyo

发明人： Hiroshi Morioka ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Yukio Kembo ,  Hidetoshi Nishiyama ,  Kazuhiko Matsuoka ,  Yoshiharu Shigyo

IPC分类号： G01N21/00 ,  G01N21/94 ,  G01N21/95 ,  G01N21/956 ,  G01R31/308 ,  H01J37/00 ,  H01L21/00 ,  H01L21/66 ,  H01L21/68

CPC分类号： H01L21/681 ,  B82Y15/00 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/95623 ,  G01N2021/8822 ,  G01R31/308 ,  H01J37/00 ,  H01J2237/022 ,  H01J2237/0225 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12

摘要： A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.

摘要翻译： 半导体制造线中的半导体器件的处理方法包括在第一处理设备中处理衬底，将在第一处理设备中处理的衬底转移到检测设备，而不从半导体制造线移除衬底，同时继续制造半导体 检测转移到检测装置的基板上的异物缺陷，以及根据来自检测的数据确定处理装置的异物生成条件。

公开(公告)号：US06618850B2

公开(公告)日：2003-09-09

申请号：US09785275

申请日：2001-02-20

申请人： Hidetoshi Nishiyama ,  Mari Nozoe ,  Hiroyuki Shinada

发明人： Hidetoshi Nishiyama ,  Mari Nozoe ,  Hiroyuki Shinada

IPC分类号： G06F1750

CPC分类号： G01N23/203 ,  G01N21/9501 ,  G01N23/225 ,  G01N2021/95615 ,  G01R31/307 ,  G01R31/311 ,  G06T7/001 ,  G06T2207/30148 ,  H01J37/268 ,  H01J37/28 ,  H01J2237/2817

摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected, such as a semiconductor wafer, with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of this signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is thereby conducted to detect a defect.

摘要翻译： 通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。 产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。 另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和 电容量被确定为与检查图像中的电容重合。 通过使用通过电子束的照射产生的电荷来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，从而进行检查以检测缺陷。

公开(公告)号：US06586952B2

公开(公告)日：2003-07-01

申请号：US09881000

申请日：2001-06-15

申请人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

发明人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

IPC分类号： G01R31305

CPC分类号： H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

摘要翻译： 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。 结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。 故障部分的图像，亮度和分布信息在检查后自动保存并输出。

公开(公告)号：US06411377B1

公开(公告)日：2002-06-25

申请号：US09362135

申请日：1999-07-28

申请人： Minori Noguchi ,  Yoshimasa Ohshima ,  Hidetoshi Nishiyama ,  Shunichi Matsumoto ,  Yukio Kembo ,  Ryouji Matsunaga ,  Keiji Sakai ,  Takanori Ninomiya ,  Tetsuya Watanabe ,  Hisato Nakamura ,  Takahiro Jingu ,  Yoshio Morishige ,  Shuichi Chikamatsu

发明人： Minori Noguchi ,  Yoshimasa Ohshima ,  Hidetoshi Nishiyama ,  Shunichi Matsumoto ,  Yukio Kembo ,  Ryouji Matsunaga ,  Keiji Sakai ,  Takanori Ninomiya ,  Tetsuya Watanabe ,  Hisato Nakamura ,  Takahiro Jingu ,  Yoshio Morishige ,  Shuichi Chikamatsu

IPC分类号： G01N2101

CPC分类号： B82Y15/00 ,  G01N21/94 ,  G01N21/95623 ,  G01N21/95684 ,  G01N2021/8822 ,  G01R31/308 ,  H01J37/00 ,  H01J2237/022 ,  H01J2237/0225 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/681 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a defect inspecting apparatus and a defect inspection method for inspecting an object of inspection for a defect such as a foreign particle existing on the object wherein, by using a high-efficiency illumination optical system for radiating an illumination beam to the object of inspection from a direction to reduce the intensity of a scattered light generated by a pattern on the object of inspection, it is possible to decrease the intensity of the scattered light from the pattern which causes a variation of a signal and, in addition, by using a means for setting a detection threshold value based on a variation of a signal computed for each area in a chip on the object of inspection, the detection threshold value can be made small and, thus, the sensitivity as well as the throughput can be raised.

摘要翻译： 本发明提供了一种缺陷检查装置和缺陷检查方法，用于检查物体上存在的异物等缺陷的检查对象，其中，通过使用用于向对象照射照明光束的高效率照明光学系统 从减少由检查对象上的图案产生的散射光的强度的方向进行检查的情况下，可以降低来自图案的散射光的强度，导致信号的变化，另外，由 使用基于针对检查对象中的芯片中的每个区域计算的信号的变化来设置检测阈值的装置，可以使检测阈值较小，因此灵敏度以及吞吐量可以是 上调。

公开(公告)号：US09182359B2

公开(公告)日：2015-11-10

申请号：US13386243

申请日：2010-06-21

申请人： Hisashi Hatano ,  Hiroyuki Yamashita ,  Hidetoshi Nishiyama

发明人： Hisashi Hatano ,  Hiroyuki Yamashita ,  Hidetoshi Nishiyama

IPC分类号： G01N21/95 ,  G01N21/956 ,  G01R31/265 ,  H01L21/68

CPC分类号： G01N21/956 ,  G01N21/9501 ,  G01R31/2656 ,  H01L21/681

摘要： Provided is a pattern defect inspecting apparatus wherein inspection performance is stabilized. The defect inspecting apparatus, which has a plurality of configuration units and inspects defects on the surface of a sample, is provided with a means for monitoring time-dependent changes and failures of some of or all of the configuration units, and a means for notifying the user of the results of the monitoring. Furthermore, a unit which can perform correction is provided with a correcting means, and also a means for replacing a failure component with a spare component which has been prepared in the device.

摘要翻译： 提供了一种图案缺陷检查装置，其中检查性能稳定。 具有多个配置单元并且检查样品表面上的缺陷的缺陷检查装置设置有用于监视部分或全部配置单元的时间依赖性变化和故障的装置，以及用于通知 用户的监控结果。 此外，可以进行校正的单元设置有校正装置，并且还具有用于在设备中准备的备用部件替换故障部件的装置。

公开(公告)号：US08902417B2

公开(公告)日：2014-12-02

申请号：US13993814

申请日：2011-11-09

申请人： Nobuaki Hirose ,  Takahiro Jingu ,  Hidetoshi Nishiyama ,  Kazuo Takahashi ,  Hisashi Hatano

发明人： Nobuaki Hirose ,  Takahiro Jingu ,  Hidetoshi Nishiyama ,  Kazuo Takahashi ,  Hisashi Hatano

IPC分类号： G01N21/00 ,  G01N21/956 ,  G01N21/95

CPC分类号： G01N21/9501 ,  G01N21/95623

摘要： This invention implements reduction in the amount of background-scattered light from a semiconductor wafer surface and highly sensitive inspection, without increasing the number of detectors. A surface inspection apparatus that detects defects on the surface of an object (semiconductor wafer surface) to be inspected, by irradiating the surface of the object with a beam of light such as laser light and detecting the light reflected or scattered from the surface; wherein a widely apertured lens with an optical Fourier transform function is disposed between the object to be inspected and a detector, a filter variable in position as well in aperture diameter is provided on a Fourier transform plane, and background-scattered light from the semiconductor wafer surface is effectively blocked, whereby only a signal from a defect such as a foreign substance is detected.

摘要翻译： 本发明实现了半导体晶片表面的背景散射光的量的减少和高灵敏度的检查，而不增加检测器的数量。 一种表面检查装置，其通过用诸如激光的光束照射物体的表面来检测从表面反射或散射的光来检测待检查的物体（半导体晶片表面）的表面上的缺陷; 其中具有光学傅里叶变换功能的广泛有孔的透镜设置在待检查对象与检测器之间，在傅里叶变换平面上设置了孔径直径可变的滤光器以及来自半导体晶片的背景散射光 表面被有效地阻挡，从而仅检测到诸如异物的缺陷的信号。

公开(公告)号：US08482728B2

公开(公告)日：2013-07-09

申请号：US12244958

申请日：2008-10-03

申请人： Sachio Uto ,  Hidetoshi Nishiyama ,  Minori Noguchi

发明人： Sachio Uto ,  Hidetoshi Nishiyama ,  Minori Noguchi

IPC分类号： G01N21/00

CPC分类号： H01L21/02334 ,  B08B6/00 ,  G01B11/0625 ,  G01B11/303 ,  G01N3/04 ,  G01N21/15 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/95623 ,  G01N2021/9563 ,  H01L21/02057 ,  H01L21/02082

摘要： An aspect of the invention provides a defect inspection apparatus being able to accurately inspect a micro foreign matter or defect at a high speed for an inspection target substrate in which a repetitive pattern and a non-repetitive pattern are mixed. In a foreign matter anti-adhesive means 180, a transparent plate 187 is placed on a placement table 34 through a frame 185. In the foreign matter anti-adhesive means 180, a shaft 181 which is rotatably supported by two columnar supports 184 fixed onto a base 186 is coupled to a motor 182 by a coupling 183. The shaft 181 is inserted into a part of a frame 185 between the two columnar supports 184 such that the frame 185 and the transparent plate 187 are turnable about the shaft 181. Therefore, the whole of the frame 185 is opened and closed in a Z-direction about the shaft 181, and a wafer 1 on the placement table 34 can be covered with the frame 185 and the transparent plate 187.

摘要翻译： 本发明的一个方面提供了一种缺陷检查装置，其能够精确地检查混合有重复图案和非重复图案的检查对象基板的高速微细异物或缺陷。 在异物防粘连装置180中，通过框架185将透明板187放置在放置台34上。在异物防粘装置180中，轴181可旋转地由两个柱状支撑件184支撑固定到 基座186通过联轴器183联接到马达18.轴181插入到两个柱状支撑件184之间的框架185的一部分中，使得框架185和透明板187围绕轴181可转动。因此 ，整个框架185围绕轴181沿Z方向打开和关闭，并且放置台34上的晶片1可以被框架185和透明板187覆盖。

公开(公告)号：US20120312104A1

公开(公告)日：2012-12-13

申请号：US13593171

申请日：2012-08-23

申请人： Akira HAMAMATSU ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Hidetoshi Nishiyama ,  Kenji Oka ,  Takanori Ninomiya ,  Maki Tanaka ,  Kenji Watanabe ,  Tetsuya Watanabe ,  Yoshio Morishige

发明人： Akira HAMAMATSU ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Hidetoshi Nishiyama ,  Kenji Oka ,  Takanori Ninomiya ,  Maki Tanaka ,  Kenji Watanabe ,  Tetsuya Watanabe ,  Yoshio Morishige

IPC分类号： G01N21/88

CPC分类号： G06T7/001 ,  G01N21/8851 ,  G01N21/9501 ,  G01N2021/8861 ,  G01N2021/8867 ,  G06T7/97 ,  G06T2207/10152 ,  G06T2207/30148

摘要： A method and apparatus of inspecting a sample, in which the sample is inspected under a plurality of inspection conditions, and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions, are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.

摘要翻译： 在多个检查条件下对样本进行检查的检查方法和装置以及在多个检查条件下检查样本而获得的检查数据和对应于检查日期样本的位置信息 具有相应的检查条件。 多个检查条件中的每一个的检查数据通过使用关于样本的位置信息彼此相对来确定待检查的位置，并且在待检查位置处的样本的图像是详细的 获得。 对所获得的图像进行分类，确定通过使用图像分类信息的样本的检查条件。