公开(公告)号：US08102434B2

公开(公告)日：2012-01-24

申请号：US11556304

申请日：2006-11-03

申请人： Tsuyoshi Yoshida ,  Nobuyuki Sato ,  Ken Nakajima

发明人： Tsuyoshi Yoshida ,  Nobuyuki Sato ,  Ken Nakajima

IPC分类号： H04N5/225 ,  H04N5/00

CPC分类号： H04N5/232 ,  H04N5/23245 ,  H04N9/045 ,  H04N9/07

摘要： An imaging apparatus capturing and recording a moving image and a static image at the same time includes a converter converting an optical image of a subject into a pixel signal, performing decimation on the pixel signal and outputting the pixel signal that has been subjected to decimation when recording of the moving image is performed but recording of the static image is not performed, and outputting the pixel signal that has not been subjected to decimation when recording of the moving image and the static image is performed; an eliminating section performing decimation on the pixel signal output from the converter only when recording of the moving image and the static image is performed; a moving image data generator generating moving image data; a static image data generator generating static image data; and a recorder recording the moving image data and the static image data.

摘要翻译： 同时拍摄和记录运动图像和静态图像的成像装置包括将被摄体的光学图像转换为像素信号的转换器，对像素信号执行抽取并输出已经进行抽取的像素信号，当 执行运动图像的记录，而不执行静态图像的记录，并且当执行运动图像和静态图像的记录时，输出未进行抽取的像素信号; 消除部，仅在进行运动图像和静态图像的记录时，对从转换器输出的像素信号进行抽取; 生成运动图像数据的运动图像数据生成器; 产生静态图像数据的静态图像数据发生器; 以及记录运动图像数据和静态图像数据的记录器。

公开(公告)号：US08083888B2

公开(公告)日：2011-12-27

申请号：US12041741

申请日：2008-03-04

申请人： Tatehito Usui ,  Tsuyoshi Yoshida ,  Tsuyoshi Matsumoto ,  Satoru Muto ,  Kenetsu Yokogawa

发明人： Tatehito Usui ,  Tsuyoshi Yoshida ,  Tsuyoshi Matsumoto ,  Satoru Muto ,  Kenetsu Yokogawa

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01J37/32972 ,  G01N21/68 ,  H01J37/32091 ,  H01J37/32935

摘要： The invention provides a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously realize long life and ensure sufficient light to be received via a light transmitting unit, to enable long term stable operation and to improve the processing accuracy via accurate etching quantity detection. In a plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light transmitting unit composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained by the light transmitting unit, wherein the end surface of the light transmitting unit through which light is entered is arranged at a distance of five times or greater of the mean free path of gas molecules within the vacuum reactor from the end surface of the shower plate facing the plasma.

摘要翻译： 本发明提供了一种用于测量被处理材料的蚀刻量的等离子体处理装置，并且利用正在处理的样品表面上的光学干涉来检测蚀刻终点，以同时实现长寿命并确保足够的光被接收 通过光发射单元，能够进行长期稳定的操作，并通过精确的蚀刻量检测来提高加工精度。 在用于通过在淋浴板和下部电极之间产生等离子体来处理被处理样品的等离子体处理装置中，用于检测经由淋浴板处理的样品的表面的光的检测器包括：光导体， 进入光的分光器和用于分析由光发射单元获得的光的分光镜，其中进入光的光透射单元的端面布置在气体的平均自由程的五倍或更大的距离 真空反应器内的分子从淋浴板的端面朝向等离子体。

公开(公告)号：US20100284694A1

公开(公告)日：2010-11-11

申请号：US12812367

申请日：2008-01-22

申请人： Tsuyoshi Yoshida ,  Toshiyuki Tokura ,  Takashi Sugihara ,  Katsuhiro Shimizu ,  Aritomo Uemura ,  Hiroki Shima ,  Kiyoshi Onohara

发明人： Tsuyoshi Yoshida ,  Toshiyuki Tokura ,  Takashi Sugihara ,  Katsuhiro Shimizu ,  Aritomo Uemura ,  Hiroki Shima ,  Kiyoshi Onohara

IPC分类号： H04J14/02

CPC分类号： H04J14/0221

摘要： A repeater includes a variable optical attenuating unit that collectively attenuates WDM optical signal input, an optical-attenuation adjusting unit that adjusts attenuation in the variable optical attenuating unit, and an optical amplifying unit that collectively amplifies and outputs the WDM optical signal collectively attenuated, to a downstream side. An optical-attenuation adjusting unit includes an input level detector; an output level detector; an output-level transmitting unit that receives information of a signal level of WDM optical signal output by a repeater at an upstream side and transmits information of a signal level of the WDM optical signal detected by the output level detector to a repeater at a downstream side; and an attenuation amount controller that controls the variable optical attenuating unit by calculating an attenuation amount thereof based on information of a signal level detected by the input level detector and a signal level received by the output-level transmitting unit.

摘要翻译： 中继器包括共同衰减WDM光信号输入的可变光衰减单元，调整可变光衰减单元中的衰减的光衰减调整单元和共同放大并输出共同衰减的WDM光信号的光放大单元， 下游侧。 光衰减调整单元包括输入电平检测器; 输出电平检测器; 输出级发送单元，其接收由上游侧的中继器输出的WDM光信号的信号电平的信息，并将由输出电平检测器检测出的WDM光信号的信号电平的信息发送到下游侧的中继器 ; 以及衰减量控制器，其通过基于由输入电平检测器检测到的信号电平的信息和由输出电平发送单元接收的信号电平来计算其衰减量来控制可变光衰减单元。

公开(公告)号：US20080076259A1

公开(公告)日：2008-03-27

申请号：US11622525

申请日：2007-01-12

申请人： Yoshiyuki OOTA ,  Tsuyoshi Yoshida ,  Eiji Ikegami ,  Kenji Imamoto ,  Jyunji Adachi

发明人： Yoshiyuki OOTA ,  Tsuyoshi Yoshida ,  Eiji Ikegami ,  Kenji Imamoto ,  Jyunji Adachi

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： The invention provides a plasma etching method that does not create any difference in profile between sparse and dense portions of the mask pattern in processing a device having a space width equal to or smaller than 100 nm. An added gas having a high C/F ratio such as C4F8 gas capable of increasing the generation of CF2 radicals that may become sidewall protection film components having a small attachment coefficient is added to the etching gas in order to form sidewall protection films on dense pattern portions, and in addition, Xe gas is added in order to suppress dissociation effect by lowering the electron temperature.

摘要翻译： 本发明提供一种等离子体蚀刻方法，其在处理具有等于或小于100nm的空间宽度的器件时，不会在掩模图案的稀疏部分和致密部分之间产生任何差异。 具有高C / F比例的添加气体，例如可以增加CF 2 N 2基团的产生的C 4 F 8 N 2气体，其可以变成 在蚀刻气体中添加具有小附着系数的侧壁保护膜成分，以在密集图案部分上形成侧壁保护膜，另外，为了通过降低电子温度来抑制解离效果，另外添加Xe气体。

公开(公告)号：US07290685B2

公开(公告)日：2007-11-06

申请号：US11152209

申请日：2005-06-15

申请人： Tomohiro Yotabun ,  Tsuyoshi Mizuno ,  Tsuyoshi Yoshida

发明人： Tomohiro Yotabun ,  Tsuyoshi Mizuno ,  Tsuyoshi Yoshida

IPC分类号： B22D41/30

CPC分类号： B22D41/28

摘要： It is an object to form a plate for a sliding nozzle apparatus in a shape for decreasing extreme erosion and extend durability of the plate to enable cost reduction, the sliding-nozzle plate having dimensions (unit length is mm) as indicated in following equations: a dimension from the center position X of the nozzle hole to a closest end of the plate for the sliding nozzle in the longitudinal direction is a sum of a dimension “b” from the center position X to an ideal circle with the position X as the center and a dimension “d” from the ideal circle to the closest end in the longitudinal direction, a dimension from the center position X and to a center position Y is a dimension S of the stroke, and a dimension from the center position Y to a closest end of the plate for the sliding nozzle in the longitudinal direction is a dimension “c”, where b: a+30˜40, c: 0.75a+20˜30, d:0.5a, S:2a+m, and m:15˜35.

摘要翻译： 本发明的目的是形成滑动喷嘴装置的板，其具有减小极限侵蚀的形状并延长板的耐用性，以便降低成本，滑动喷嘴板的尺寸（单位长度为mm）如下面所示： 从喷嘴孔的中心位置X到纵向的滑动板的最近端的尺寸是从中心位置X到理想圆的尺寸“b”与位置X为 中心和从理想圆到纵向最近端的尺寸“d”，从中心位置X到中心位置Y的尺寸是行程的尺寸S，以及从中心位置Y到 用于滑动喷嘴的纵向方向的最靠近的端部是尺寸“c”，其中b：a + 30〜40，c：0.75a + 20〜30，d：0.5a，S：2a + m， m：15〜35。

公开(公告)号：US20070126285A1

公开(公告)日：2007-06-07

申请号：US10574977

申请日：2004-10-06

申请人： Shota Murakami ,  Tsuyoshi Yoshida

发明人： Shota Murakami ,  Tsuyoshi Yoshida

IPC分类号： B62D55/14

CPC分类号： B62D55/15 ,  B62D55/092 ,  B62D55/32

摘要： A pin assembly (112) suitable for mounting a track roller bogie (5) on a track frame (1) of a crawler type traveling apparatus, wherein first to third rings (114 to 116) are disposed on an outer peripheral surface of a pin (13) having lubricant supply passages. Sealing means (18, 19) are disposed between end faces of the respective rings (114 to 116) and end faces other than those of the sealing means (18, 19) are formed in slide contact faces (114b, 115b; 115c, 116b), which slidably direct contact with each other. As compared with a conventional case in which spacers are installed between the first to third rings, the total wear amount of the slide contact faces is remarkably reduced, the number of parts is reduced by abolishing the conventional spacers which caused defective lubrication, and a load between the rings in a thrust direction is directly received between the rings. As a result, the troublesomeness of an assembly of the track roller bogie and a reduction in service life due to defective lubrication can be eliminated.

摘要翻译： 一种适于将履带式转向架（5）安装在履带式行驶装置的履带架（1）上的销组件（112），其中第一至第三环（114至116）设置在销的外周表面上 （13）具有润滑剂供给通道。 密封装置（18,19）设置在各个环（114至116）的端面之间，并且除了密封装置（18,19）的端面之外的端面形成在滑动接触面（114b，115b; 115 c，116b），其彼此可滑动地直接接触。 与在第一至第三环之间安装间隔件的常规情况相比，滑动接触面的总磨损量显着降低，通过消除导致润滑不良的常规间隔件减少部件数量，并且负载 环之间的推力方向直接接在环之间。 结果，可以消除滚轮转向架的组装麻烦和润滑不良导致的使用寿命降低。

公开(公告)号：US20070090090A1

公开(公告)日：2007-04-26

申请号：US11345537

申请日：2006-02-02

申请人： Koichi Nakaune ,  Yasuhiro Nishimori ,  Toshiaki Nishida ,  Tsuyoshi Yoshida

发明人： Koichi Nakaune ,  Yasuhiro Nishimori ,  Toshiaki Nishida ,  Tsuyoshi Yoshida

IPC分类号： C23F1/00 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/31138 ,  H01L21/0332 ,  H01L21/312

摘要： A surface treatment method is provided, wherein the ratio of the etching rate of a lower resist of a multilayer resist film used for forming a fine pattern to that of an inorganic intermediate layer thin film serving as a mask to control the dimension of the pattern, that is, the shoulder selection ratio, is increased in an etching treatment of a semiconductor or the like. In the surface treatment method of a semiconductor, in which an inorganic intermediate film and an upper resist film are laminated on a lower resist film, by using plasma, CO2 containing oxygen as a primary component is added to a gas composed of nitrogen and hydrogen, so that an etching gas is prepared. Consequently, cutting of a shoulder of the inorganic intermediate layer film is reduced and a perpendicular shape is attained.

摘要翻译： 提供一种表面处理方法，其中用于形成精细图案的多层抗蚀剂膜的下抗蚀剂与用作掩模的无机中间层薄膜的蚀刻速率之比控制图案的尺寸， 也就是说，肩选择率在半导体等的蚀刻处理中增加。 在其中通过使用等离子体层叠无机中间膜和上抗蚀剂膜的半导体的表面处理方法中，添加含有氧作为主要成分的CO 2， 由氮气和氢气组成的气体，从而制备蚀刻气体。 因此，无机中间层膜的肩部的切割减少并且获得垂直的形状。

公开(公告)号：US07126069B2

公开(公告)日：2006-10-24

申请号：US11331195

申请日：2006-01-13

申请人： Hidenobu Mukougawa ,  Daisuke Shimizu ,  Takayuki Horie ,  Tsuyoshi Yoshida

发明人： Hidenobu Mukougawa ,  Daisuke Shimizu ,  Takayuki Horie ,  Tsuyoshi Yoshida

IPC分类号： H01H1/64

CPC分类号： H01H13/7057 ,  H01H2003/466 ,  H01H2221/016 ,  H01H2223/014 ,  H01H2233/004

摘要： The present invention provides an electronic apparatus with an operation button that can be easily mounted and prevents from being pushed into the electronic apparatus excessively. A front panel is provided with a button mounting portion. The front panel is further provided with an opening, a stopper portion, and a convex portion. The convex portion is fitted into a concave portion formed in an operation button to position the operation button. The operation button is sandwiched between the convex portion and a decorative panel. When an operating portion is pushed, a hinge portion formed on the operation button is bent to allow a pushing portion inserted through the opening to operate an internal switch. An abutting portion abuts against the stopper portion to inhibit the operation button from being excessively pushed in.

摘要翻译： 本发明提供一种电子设备，其具有可以容易地安装并防止被过度地推入电子设备的操作按钮。 前面板设置有按钮安装部。 前面板还设置有开口，止动部和凸部。 该凸部嵌入到形成在操作按钮中的凹部中，以定位操作按钮。 操作按钮夹在凸部和装饰板之间。 当操作部分被推动时，形成在操作按钮上的铰链部分被弯曲以允许插入通过开口的推动部分操作内部开关。 抵接部抵靠止动部，阻止操作按钮过度推入。

公开(公告)号：US20060073619A1

公开(公告)日：2006-04-06

申请号：US11293213

申请日：2005-12-05

申请人： Tatehito Usui ,  Motohiko Yoshigai ,  Tsuyoshi Yoshida ,  Hideyuki Yamamoto

发明人： Tatehito Usui ,  Motohiko Yoshigai ,  Tsuyoshi Yoshida ,  Hideyuki Yamamoto

IPC分类号： H01L21/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： H01J37/32935 ,  H01L21/31116

摘要： In a semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a chamber, by using plasma generated in the chamber, a change in light of multi-wavelength from the surface of the semiconductor wafer is measured during a predetermined period of the etching process, and a state of the etching process is judged from the displayed change amount of light of multi-wavelength.

摘要翻译： 在半导体器件制造装置中，通过使用在室内产生的等离子体，对具有形成在其表面上的多个膜并且设置在室中的半导体晶片进行蚀刻处理，从表面的多波长的光的变化 在蚀刻处理的预定周期期间测量半导体晶片，并且根据所显示的多波长的光的变化量来判断蚀刻处理的状态。

公开(公告)号：US06872344B2

公开(公告)日：2005-03-29

申请号：US10356430

申请日：2003-01-31

申请人： Keizo Aramaki ,  Tsuyoshi Yoshida

发明人： Keizo Aramaki ,  Tsuyoshi Yoshida

IPC分类号： B22D41/58 ,  B22D1/00 ,  B22D27/13 ,  C21B11/10 ,  C21C5/48 ,  C21C7/00 ,  C21C7/072 ,  C21C7/10 ,  C22B9/20 ,  F27D3/16 ,  B29C33/40

CPC分类号： B22D1/005 ,  C21C5/48 ,  C21C7/00

摘要： A gas blowing plug and a manufacturing method therefor wherein the gas blowing plug includes a slit-shaped gas passage (22) ranging from the bottom to the top of the plug. The gas passage (22) is continuous or discontinuous in a horizontal cross section of the plug. The slit-shaped gas passage (22) is also continuous from the bottom to the top of the plug and slit-shaped gas passage (26) is discontinuous in a vertical cross section of the plug. In one example, the cross-sectional shape of the slit-shaped gas passage (22) is a pointed star.

摘要翻译： 一种气体吹送塞及其制造方法，其特征在于，所述气体吹出塞具有从所述塞的底部到顶部的狭缝状的气体通路（22）。 气体通道（22）在塞子的水平横截面中是连续的或不连续的。 狭缝状气体通道（22）也从塞子的底部到顶部连续，狭缝状气体通道（26）在塞子的垂直截面中是不连续的。 在一个示例中，狭缝状气体通道（22）的横截面形状是尖的星形。