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149 条记录 (耗时 0.026 秒)

    Heat treating system and heat treating method
    61.
    发明申请
    Heat treating system and heat treating method 审中-公开
    热处理系统和热处理方法

    公开(公告)号：US20060099805A1

    公开(公告)日：2006-05-11

    申请号：US10532878

    申请日：2003-10-29

    申请人： Takehiko Fujita ,  Mitsuhiro Okada ,  Kota Umezawa ,  Kazuhide Hasebe ,  Koichi Sakamoto

    发明人： Takehiko Fujita ,  Mitsuhiro Okada ,  Kota Umezawa ,  Kazuhide Hasebe ,  Koichi Sakamoto

    IPC分类号： H01L21/44 ,  C23C16/00 ,  H05B3/02

    CPC分类号： H01L21/67253 ,  F27B17/0025 ,  H01L21/67109

    摘要： A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data. The target-data of flow-rate parameter are determined in such a manner that a speed of the film-forming process is uniform among a plurality of batch-processes in which the numbers of substrates to be processed are different from each other.

    摘要翻译： 本发明的热处理单元包括：保持多个基板的保持器; 保持器被输送到其中的反应容器; 将处理气体供给到反应容器内的处理气体供给机构; 以及加热机构，当供给处理气体时，加热反应容器进行成膜处理。 将通过一批处理的基板的数量数据与处理气体的流量参数的目标数据相关联的流量参数表数据存储在流量参数表数据存储部 。 控制单元根据存储在流量参数表中的流量参数表数据，取决于通过一个批处理的待处理的基板的实际数量来获得处理气体的流量参数的目标数据。 速率参数表数据存储部，并根据获得的目标数据来控制处理气体供给机构。 流量参数的目标数据以这样一种方式确定，即在待处理的基板数目彼此不同的多个间歇处理中，成膜处理的速度是一致的。

    Oxidation method and oxidation system
    64.
    发明申请
    Oxidation method and oxidation system 有权
    氧化法和氧化体系

    公开(公告)号：US20060276051A1

    公开(公告)日：2006-12-07

    申请号：US11502503

    申请日：2006-08-11

    申请人： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

    发明人： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/67017 ,  H01L21/67109

    摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.

    摘要翻译： 氧化法能够以改善的膜间厚度均匀性形成氧化膜。 氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛 处理容器22通过氧化气体与还原气体的相互作用。 将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

    Oxidation method and oxidation system
    65.
    发明申请
    Oxidation method and oxidation system 有权
    氧化法和氧化体系

    公开(公告)号：US20050164518A1

    公开(公告)日：2005-07-28

    申请号：US10992469

    申请日：2004-11-19

    申请人： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

    发明人： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

    IPC分类号： H01L21/00 ,  H01L21/316 ,  H01L21/31

    CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

    摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.

    摘要翻译： 氧化法能够以改善的膜间厚度均匀性形成氧化膜。 氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛 处理容器22通过氧化气体和还原气体的相互作用。 将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

    Trench-filling method and film-forming system
    69.
    发明授权
    Trench-filling method and film-forming system 有权
    沟槽填充法和成膜系统

    公开(公告)号：US08722510B2

    公开(公告)日：2014-05-13

    申请号：US13194426

    申请日：2011-07-29

    申请人： Masahisa Watanabe ,  Kazuhide Hasebe

    发明人： Masahisa Watanabe ,  Kazuhide Hasebe

    IPC分类号： H01L21/76

    CPC分类号： H01L21/67167 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02304 ,  H01L21/02323 ,  H01L21/32055 ,  H01L21/32105 ,  H01L21/67207 ,  H01L21/76227

    摘要： A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide.

    摘要翻译： 填充沟槽的方法包括加热其中形成有沟槽的半导体衬底和至少形成在沟槽的侧壁上的氧化膜，并将氨基硅烷气体供应到衬底的表面，以在半导体上形成晶种层 对其上形成有籽晶层的半导体基板进行加热，并向种子层的表面供给单硅烷气体，以在种子层上形成硅膜，填充形成有硅膜的半导体衬底的沟槽 在其上通过燃烧收缩的填充材料，并且在将填充材料变为氧化硅并且改变硅膜的同时，在填充有水和/或羟基的气氛中填充沟槽的填充材料涂覆的半导体衬底燃烧， 种子层成为氧化硅。

    Film formation method and film formation apparatus
    70.
    发明授权
    Film formation method and film formation apparatus 有权
    成膜方法和成膜装置

    公开(公告)号：US08431494B2

    公开(公告)日：2013-04-30

    申请号：US13164280

    申请日：2011-06-20

    申请人： Hiroki Murakami ,  Kazuhide Hasebe ,  Kazuya Yamamoto ,  Toshihiko Takahashi ,  Daisuke Suzuki

    发明人： Hiroki Murakami ,  Kazuhide Hasebe ,  Kazuya Yamamoto ,  Toshihiko Takahashi ,  Daisuke Suzuki

    IPC分类号： H01L21/469 ,  H01L21/316

    CPC分类号： C23C16/401 ,  C23C16/45523

    摘要： A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.

    摘要翻译： 在处理室中的待处理物体的表面上形成氧化硅膜的成膜方法包括通过将种子气体供给到待处理物体的表面上来吸收包含硅烷类气体的种子气体 处理室，通过将作为原料气体的含硅气体和含有该杂质的添加气体供给到处理室中，形成具有杂质的硅膜，氧化硅膜，将硅膜转换成氧化硅膜。 因此，在待处理物体的表面上形成具有高密度和高应力的氧化硅膜。