公开(公告)号：US08991332B2

公开(公告)日：2015-03-31

申请号：US12394203

申请日：2009-02-27

申请人： Satheesh Kuppurao ,  David K. Carlson ,  Manish Hemkar ,  Andrew Lam ,  Errol Sanchez ,  Howard Beckford

发明人： Satheesh Kuppurao ,  David K. Carlson ,  Manish Hemkar ,  Andrew Lam ,  Errol Sanchez ,  Howard Beckford

IPC分类号： C23C16/46 ,  C23C16/52 ,  C23C16/44 ,  H01L21/67

CPC分类号： C23C16/46 ,  C23C16/4411 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。 腔表面的多于一个部分可以进行温度调制。

公开(公告)号：US08813538B2

公开(公告)日：2014-08-26

申请号：US13237144

申请日：2011-09-20

申请人： David K. Carlson ,  Satheesh Kuppurao

发明人： David K. Carlson ,  Satheesh Kuppurao

IPC分类号： G01N7/00 ,  G01N33/00

CPC分类号： G01N33/0016 ,  Y10T137/85978

摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.

摘要翻译： 公开了系统和方法，其包括例如使用加压的惰性参考气体来调节测试室中的样品气体的压力水平，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地测定样品气体的组成。 公开了许多其他方面。

公开(公告)号：US08603898B2

公开(公告)日：2013-12-10

申请号：US13436644

申请日：2012-03-30

申请人： Xinyu Bao ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Zhiyuan Ye

发明人： Xinyu Bao ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Zhiyuan Ye

IPC分类号： H01L21/20 ,  H01L21/36 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  C30B11/00 ,  C30B35/00

CPC分类号： H01L29/205 ,  H01L21/02381 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/0262 ,  H01L21/02694 ,  H01L29/267 ,  Y10T117/1008

摘要： A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.

摘要翻译： 一种在硅衬底上形成保形III / V层的方法，其上形成有III / V层的所得衬底。 该方法包括从衬底去除原生氧化物，将衬底定位在处理室内，将衬底加热至第一温度，将衬底冷却至第二温度，将III族前体流入处理室，保持第二温度，同时 将III族前体和V族前体流入处理室，直到形成共形层，同时停止III族前体的流动，将处理室加热至退火温度，并将处理室冷却至第二温度。 可以通过使用优先蚀刻电介质区域的卤化物气蚀刻来选择性地制备III / V层的沉积。

公开(公告)号：US08501600B2

公开(公告)日：2013-08-06

申请号：US13189978

申请日：2011-07-25

申请人： Errol Sanchez ,  Yi-Chiau Huang ,  David K. Carlson

发明人： Errol Sanchez ,  Yi-Chiau Huang ,  David K. Carlson

IPC分类号： H01L21/00

CPC分类号： H01L21/02381 ,  H01L21/0237 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/0262

摘要： Methods for depositing germanium-containing layers on silicon-containing layers are provided herein. In some embodiments, a method may include depositing a first layer atop an upper surface of the silicon-containing layer, wherein the first layer comprises predominantly germanium (Ge) and further comprises a lattice adjustment element having a concentration selected to enhance electrical activity of dopant elements, wherein the dopant elements are disposed in at least one of the first layer or in an optional second layer deposited atop of the first layer, wherein the optional second layer, if present, comprises predominantly germanium (Ge). In some embodiments, the second layer is deposited atop the first layer. In some embodiments, the second layer comprises germanium (Ge) and dopant elements.

摘要翻译： 本文提供了在含硅层上沉积含锗层的方法。 在一些实施例中，一种方法可以包括沉积位于含硅层的上表面顶部的第一层，其中第一层主要包含锗（Ge），并且还包括具有选择以增强掺杂剂的电活性的浓度的晶格调节元件 元素，其中所述掺杂剂元素设置在所述第一层中的至少一个中或沉积在所述第一层顶部的任选的第二层中，其中所述任选的第二层（如果存在）主要包含锗（Ge）。 在一些实施例中，第二层沉积在第一层的顶部。 在一些实施例中，第二层包括锗（Ge）和掺杂元素。

公开(公告)号：US20120247386A1

公开(公告)日：2012-10-04

申请号：US13193506

申请日：2011-07-28

申请人： Errol Antonio C. Sanchez ,  David K. Carlson

发明人： Errol Antonio C. Sanchez ,  David K. Carlson

IPC分类号： C30B25/02 ,  C30B25/10 ,  C30B25/16 ,  C30B25/12 ,  C30B25/08 ,  C30B25/14

CPC分类号： C30B25/14 ,  C23C16/08 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/4586 ,  C30B23/02 ,  C30B23/06 ,  C30B23/063 ,  C30B23/066 ,  C30B25/10 ,  C30B25/16 ,  C30B29/08 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02581 ,  H01L21/02636 ,  H01L29/1054

摘要： A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.

摘要翻译： 描述了形成异质结应力层的方法和装置。 将锗前体和金属前体提供到室，并在基板上形成锗 - 金属合金外延层。 金属前体通常是金属卤化物，其可以通过升华固体金属卤化物或通过使纯金属与卤素气体接触来提供。 前体可以通过喷头或通过侧入口提供，并且耦合到室的排气系统可以被单独加热以管理排气部件的冷凝。

公开(公告)号：US20110217466A1

公开(公告)日：2011-09-08

申请号：US13109533

申请日：2011-05-17

申请人： David K. Carlson ,  Errol Antonio C. Sanchez ,  Satheesh Kuppurao

发明人： David K. Carlson ,  Errol Antonio C. Sanchez ,  Satheesh Kuppurao

IPC分类号： C23C16/448

CPC分类号： C23C16/4482

摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.

摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。

公开(公告)号：US20090314205A1

公开(公告)日：2009-12-24

申请号：US12144485

申请日：2008-06-23

申请人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

发明人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

IPC分类号： B05C11/00

CPC分类号： G02B23/2492

摘要： A system for monitoring a process inside a high temperature semiconductor process chamber by capturing images is disclosed. Images are captured through a borescope by a camera. The borescope is protected from high temperatures by a reflective sheath and an Infrared (IR) cur-off filter. Images can be viewed on a monitor and can be recorded by a video recording device. Images can also be processed by a machine vision system. The system can monitor the susceptor and a substrate on the susceptor and surrounding structures. Deviations from preferred geometries of the substrate and deviations from preferred positions of susceptor and the substrate can be detected. Actions based on the detections of deviations can be taken to improve the performance of the process. Illumination of a substrate by a laser for detecting deviations in substrate geometry and position is also disclosed.

摘要翻译： 公开了一种用于通过捕获图像监视高温半导体处理室内的处理的系统。 照相机通过管道镜捕获图像。 通过反射护套和红外线（IR）截止滤波器，保护套管免受高温的影响。 可以在监视器上观看图像，并且可以由视频记录装置记录。 图像也可以由机器视觉系统处理。 该系统可以监测基座和基座和周围的结构。 可以检测到偏离衬底的优选几何形状和偏离基座和衬底的优选位置。 可以采取基于偏差检测的操作来改善过程的性能。 还公开了用于检测基板几何形状和位置的偏差的用于激光的衬底的照明。

公开(公告)号：US06489220B2

公开(公告)日：2002-12-03

申请号：US10140584

申请日：2002-05-06

申请人： David K. Carlson ,  Dale R. Du Bois

发明人： David K. Carlson ,  Dale R. Du Bois

IPC分类号： H01L2120

CPC分类号： C30B33/005 ,  C30B29/06 ,  H01L21/31662

摘要： A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

公开(公告)号：US06436194B1

公开(公告)日：2002-08-20

申请号：US09788121

申请日：2001-02-16

申请人： David K. Carlson ,  Dale R. Du Bois

发明人： David K. Carlson ,  Dale R. Du Bois

IPC分类号： C23C1600

CPC分类号： C30B33/005 ,  C30B29/06 ,  H01L21/31662

摘要： A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

公开(公告)号：US06064799A

公开(公告)日：2000-05-16

申请号：US71469

申请日：1998-04-30

申请人： Roger N. Anderson ,  David K. Carlson

发明人： Roger N. Anderson ,  David K. Carlson

IPC分类号： H01L21/205 ,  H01L21/00 ,  H01L21/26 ,  A21B2/00

CPC分类号： H01L21/67248 ,  H01L21/67115

摘要： A method and apparatus for controlling the radial temperature gradients of a wafer and a susceptor while ramping the temperature of the wafer and susceptor using a first heat source that is primarily directed at a central portion of the wafer, a second heat source that is primarily directed at an outer portion of the wafer, a third heat source that is primarily directed at a central portion of the susceptor, and a fourth heat source that is primarily directed at an outer portion of the susceptor. Ramping of the wafer and susceptor temperature is accomplished by applying power to the first, second, third and fourth heat sources. During ramping, the ratio of the first and second heat source powers is varied as a function of the wafer temperature and the ratio of the third and fourth heat source powers is varied as a function of the susceptor temperature.

摘要翻译： 一种用于控制晶片和基座的径向温度梯度的方法和装置，同时使用主要针对晶片的中心部分的第一热源来升高晶片和基座的温度，主要定向的第二热源 在晶片的外部，主要指向基座的中心部分的第三热源和主要指向基座的外部的第四热源。 通过向第一，第二，第三和第四热源施加电力来实现晶片和基座温度的斜坡化。 在斜坡期间，第一和第二热源功率的比率作为晶片温度的函数而变化，并且第三和第四热源功率的比值作为基座温度的函数而变化。