公开(公告)号：US20250118973A1

公开(公告)日：2025-04-10

申请号：US18989638

申请日：2024-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H02J7/00 ,  H01M10/42

Abstract: The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device.

公开(公告)号：US20250063820A1

公开(公告)日：2025-02-20

申请号：US18938670

申请日：2024-11-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA

IPC: H01L27/12 ,  G09G3/3266 ,  G09G3/36 ,  G11C19/28

Abstract: The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register.

公开(公告)号：US20240243204A1

公开(公告)日：2024-07-18

申请号：US18522543

申请日：2023-11-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  G06K19/077 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088 ,  H01L27/12 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66 ,  G11C7/00 ,  G11C19/28 ,  H02M3/07

CPC classification number: H01L29/78609 ,  G06K19/07758 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  G11C7/00 ,  G11C19/28 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor, With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US20240203337A1

公开(公告)日：2024-06-20

申请号：US18591443

申请日：2024-02-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/3208 ,  G09G3/20 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/786 ,  H10K59/121 ,  H10K59/131

CPC classification number: G09G3/3208 ,  G09G3/2003 ,  G09G3/3233 ,  H01L27/1225 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/131 ,  G09G2330/021

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

公开(公告)号：US20230411410A1

公开(公告)日：2023-12-21

申请号：US18239928

申请日：2023-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  G09G3/20 ,  G09G3/3291 ,  H01L29/786 ,  H03K19/003 ,  H03K19/096 ,  G11C19/28 ,  H03K17/16 ,  G09G3/36 ,  G11C19/18

CPC classification number: H01L27/1255 ,  G09G3/3233 ,  G09G3/3291 ,  H01L27/1225 ,  H01L29/7869 ,  H01L27/1222 ,  H03K19/00315 ,  H03K19/096 ,  G09G3/2092 ,  G11C19/28 ,  H03K17/161 ,  G09G3/36 ,  G11C19/184 ,  H01L27/124 ,  G09G3/20

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

公开(公告)号：US20230397447A1

公开(公告)日：2023-12-07

申请号：US18235995

申请日：2023-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H10B99/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/16 ,  G11C11/405 ,  G11C16/04 ,  H01L27/105 ,  H01L27/118 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H01L29/786

CPC classification number: H10B99/00 ,  H01L27/1207 ,  H01L29/24 ,  H01L29/16 ,  G11C11/405 ,  G11C16/0433 ,  H01L27/105 ,  H01L27/11803 ,  H01L27/1225 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H01L29/7869 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/247 ,  H01L29/78693 ,  H01L29/78696 ,  G11C2211/4016 ,  H01L21/8221

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US20230361128A1

公开(公告)日：2023-11-09

申请号：US18224666

申请日：2023-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/088 ,  H01L29/04

CPC classification number: H01L27/1225 ,  H01L29/7869 ,  H01L29/24 ,  H01L27/0883 ,  H01L29/045 ,  H01L29/78693 ,  H01L29/78696 ,  H01L29/78669 ,  H01L29/78678 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L21/02603

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

公开(公告)号：US20210383750A1

公开(公告)日：2021-12-09

申请号：US17411401

申请日：2021-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/3208 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3233 ,  G09G3/20 ,  H01L27/32

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

公开(公告)号：US20210306721A1

公开(公告)日：2021-09-30

申请号：US17344496

申请日：2021-06-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA

IPC: H04Q9/00 ,  G08C17/02 ,  H01L27/12

Abstract: To provide an environmental sensor with reduced power consumption.
A semiconductor device includes a first sensor, a second sensor, a control circuit, a transmission amplifier, a modulation circuit, a memory device, an analog-to-digital converter circuit, and an antenna. The memory device and the analog-to-digital converter circuit each include a transistor in which an oxide semiconductor is formed in a channel region. The second sensor is an optical sensor, and has a function of transmitting a trigger signal to the control circuit when receiving laser light. The control circuit has a function of transmitting a control signal to the first sensor, the transmission amplifier, the modulation circuit, the memory device, and the analog-to-digital converter circuit when receiving the trigger signal. The first sensor is a sensor that senses a physical or chemical quantity, and the measured data is subjected to digital conversion by the analog-to-digital converter circuit and stored in the memory device. In addition, the data is transmitted as an electromagnetic wave signal from the antenna through the modulation circuit and the transmission amplifier.

公开(公告)号：US20210143281A1

公开(公告)日：2021-05-13

申请号：US17010151

申请日：2020-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/26 ,  G06K19/077 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.