公开(公告)号：US09653613B2

公开(公告)日：2017-05-16

申请号：US15047940

申请日：2016-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Akihisa Shimomura ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Yuhei Sato ,  Naoki Okuno ,  Motoki Nakashima

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/06

CPC classification number: H01L29/7869 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0607 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969

Abstract: Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first conductor in contact with a top surface of the oxide semiconductor, a second conductor in contact with the top surface of the oxide semiconductor, a first insulator over the first and second conductors and in contact with the top surface of the oxide semiconductor, a second insulator over the first insulator, a third conductor over the second insulator, and a third insulator over the third conductor. The third conductor overlaps with the first conductor with the first and second insulators positioned therebetween, and overlaps with the second conductor with the first and second insulators positioned therebetween. The first insulator contains oxygen. The second insulator transmits less oxygen than the first insulator. The third insulator transmits less oxygen than the first insulator.

公开(公告)号：US09559174B2

公开(公告)日：2017-01-31

申请号：US15068708

申请日：2016-03-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/24 ,  C01G15/00 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

公开(公告)号：US09472678B2

公开(公告)日：2016-10-18

申请号：US14580651

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideomi Suzawa ,  Yasumasa Yamane ,  Yuhei Sato ,  Sachiaki Tezuka

IPC: H01L29/786 ,  H01L29/16 ,  H01L27/088 ,  H01L27/06

CPC classification number: H01L29/7869 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1225 ,  H01L29/16

Abstract: To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

Abstract translation: 为了提供具有稳定电特性的晶体管，具有低截止电流的晶体管，具有高导通电流的晶体管，包括晶体管的半导体器件或耐用的半导体器件。 半导体器件包括使用硅的第一晶体管，在第一晶体管上的氧化铝膜，以及在氧化铝膜上使用氧化物半导体的第二晶体管。 氧化物半导体的氢浓度低于硅。

公开(公告)号：US09450080B2

公开(公告)日：2016-09-20

申请号：US14570422

申请日：2014-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Naoto Yamade ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Masayuki Sakakura ,  Yuhei Sato ,  Yasumasa Yamane

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L21/441 ,  H01L21/425 ,  H01L21/383

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film.

Abstract translation: 半导体器件通过以下方法制造。 在第一栅电极和第一绝缘膜上形成第一氧化物半导体膜，在第一氧化物半导体膜上添加氧，然后在第一氧化物半导体膜上形成第二氧化物半导体膜。 然后进行热处理。 接下来，蚀刻第一绝缘膜的一部分，第一氧化物半导体膜的一部分和第二氧化物半导体膜的一部分，以形成具有突起的第一栅极绝缘膜。 接着，在第二氧化物半导体膜上形成一对电极，在第二氧化物半导体膜和一对电极上形成第三氧化物半导体膜。 然后，在第三氧化物半导体膜上形成第二栅极绝缘膜，在第二栅极绝缘膜上形成第二栅电极。

公开(公告)号：US09443990B2

公开(公告)日：2016-09-13

申请号：US14464966

申请日：2014-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kiyoshi Kato ,  Yasuhiko Takemura ,  Tetsuhiro Tanaka ,  Takayuki Inoue ,  Toshihiko Takeuchi ,  Yasumasa Yamane ,  Shunpei Yamazaki

IPC: H03K19/003 ,  H01L21/324 ,  H01L29/792 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  G11C16/04 ,  H01L27/12 ,  H03K19/00 ,  H03K19/177

CPC classification number: H01L29/792 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/1225 ,  H01L29/4234 ,  H01L29/66833 ,  H03K19/0013 ,  H03K19/17736

Abstract: A manufacturing method of a semiconductor device in which the threshold is adjusted is provided. In a semiconductor device including a plurality of transistors arranged in a matrix each including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the semiconductor, electrons are trapped in the charge trap layer by performing heat treatment and, simultaneously, keeping a potential of the gate electrode higher than that of the source or drain electrode for 1 second or more. By this process, the threshold increases and Icut decreases. A circuit that supplies a signal to the gate electrode (e.g., word line driver) is provided with a selection circuit formed of an OR gate, an XOR gate, or the like, whereby potentials of word lines can be simultaneously set higher than potentials of bit lines.

Abstract translation: 提供了其中调整阈值的半导体器件的制造方法。 在包括以矩阵形式排列的多个晶体管的半导体器件中，每个晶体管包括半导体，与该半导体电连接的源极或漏极，栅电极和栅电极与半导体之间的电荷陷阱层，电子被俘获在 通过进行热处理，同时使栅电极的电位比源极或漏极的电位高1秒以上。 通过该过程，阈值增加并且Icut减小。 向门电极（例如字线驱动器）提供信号的电路设置有由或门，异或门等形成的选择电路，由此可以将字线的电位同时设置为高于电位 位线。

公开(公告)号：US09412877B2

公开(公告)日：2016-08-09

申请号：US14176472

申请日：2014-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Yasumasa Yamane ,  Hideomi Suzawa ,  Daisuke Matsubayashi ,  Shunpei Yamazaki

IPC: H01L27/14 ,  H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/7869

Abstract: A transistor or the like having excellent electrical characteristics is provided. A semiconductor device includes a gate electrode; a gate insulating film in contact with the gate electrode; and a multilayer film which is in contact with the gate insulating film and includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer in the order from a side farthest from the gate insulating film. The first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer each contain indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The first oxide semiconductor layer has a thickness greater than or equal to 20 nm and less than or equal to 200 nm. The third oxide semiconductor layer has a thickness greater than or equal to 0.3 nm and less than 10 nm.

Abstract translation: 提供具有优异电特性的晶体管等。 半导体器件包括栅电极; 与栅电极接触的栅极绝缘膜; 以及与所述栅极绝缘膜接触并且从距离所述栅极绝缘膜最远的一侧依次包括第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层的多层膜。 第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层各自含有铟，元素M（铝，镓，钇或锡）和锌。 第一氧化物半导体层具有大于或等于20nm且小于或等于200nm的厚度。 第三氧化物半导体层的厚度大于或等于0.3nm且小于10nm。

公开(公告)号：US09293598B2

公开(公告)日：2016-03-22

申请号：US14141831

申请日：2013-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Hiroshi Fujiki ,  Hiromichi Godo ,  Yasumasa Yamane

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/4908 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869

Abstract: The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.

Abstract translation: 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。

公开(公告)号：US09263514B2

公开(公告)日：2016-02-16

申请号：US14486179

申请日：2014-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Yasumasa Yamane

IPC: H01L21/8234 ,  H01L29/06 ,  H01L29/12

Abstract: Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

公开(公告)号：US20140183529A1

公开(公告)日：2014-07-03

申请号：US14141831

申请日：2013-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Hiroshi Fujiki ,  Hiromichi Godo ,  Yasumasa Yamane

IPC: H01L29/786

CPC classification number: H01L29/4908 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869

Abstract: The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.

Abstract translation: 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。