公开(公告)号：US5663695A

公开(公告)日：1997-09-02

申请号：US558607

申请日：1995-10-31

申请人： Mitsuhiro Tanaka ,  Susumu Nomoto ,  Masahiko Sugiyama ,  Kenji Suzuki

发明人： Mitsuhiro Tanaka ,  Susumu Nomoto ,  Masahiko Sugiyama ,  Kenji Suzuki

IPC分类号： H03H9/00 ,  H03H9/02 ,  H03H9/145 ,  H03H9/64

CPC分类号： H03H9/0042 ,  H03H9/02779 ,  H03H9/0285 ,  H03H9/14505 ,  H03H9/1452 ,  H03H9/14552 ,  H03H9/6426 ,  H03H9/643

摘要： A surface acoustic wave filter device suitable for CDMA communication system includes a piezoelectric substrate, and a unidirectional input side transducer and a bidirectional output side transducer are formed on the substrate. The filter device has satisfactory filtering characteristics in terms of insertion loss, frequency characteristics, T.T.E. attenuation level, group delay time, etc.

摘要翻译： 适用于CDMA通信系统的表面声波滤波器装置包括压电基板，单向输入侧换能器和双向输出侧换能器形成在基板上。 滤波器装置在插入损耗，频率特性T.T.E.方面具有令人满意的滤波特性。 衰减水平，组延迟时间等

公开(公告)号：US5306978A

公开(公告)日：1994-04-26

申请号：US064675

申请日：1993-05-21

申请人： Kazuhiko Yamanouchi ,  Mitsuhiro Tanaka

发明人： Kazuhiko Yamanouchi ,  Mitsuhiro Tanaka

IPC分类号： H03H9/145 ,  H01L41/08

CPC分类号： H03H9/14505

摘要： In a surface acoustic wave transducer including a substrate made of a piezoelectric material, an input side IDT structure having positive and negative electrodes arranged in an interdigit manner and floating electrodes arranged between successive positive and negative electrodes, and an output side IDT structure having positive and negative electrodes arranged in an interdigit manner and floating electrodes arranged between successive positive and negative electrodes, the electrodes of the input and output side IDT structures are arranged such that a surface acoustic wave propagates in one direction, distances between corresponding tracks in the input and output side IDT structures are linearly changed and lengths of these tracks are changed in accordance with a predetermined window function.

摘要翻译： 在包括由压电材料制成的衬底的表面声波传感器中，具有以叉指排列的正极和负极的输入侧IDT结构和排列在连续的正极和负极之间的浮动电极，以及具有正和负极的输出侧IDT结构， 以相互指向布置的负极和布置在连续的正极和负极之间的浮动电极，输入和输出侧IDT结构的电极被布置成使得表面声波沿一个方向传播，输入和输出中的相应轨道之间的距离 线IDT结构线性变化，并且这些轨道的长度根据预定的窗函数而改变。

公开(公告)号：US20110203773A1

公开(公告)日：2011-08-25

申请号：US13127158

申请日：2009-11-02

申请人： Junichi Teraki ,  Mitsuhiro Tanaka ,  Noriyuki Okuda

发明人： Junichi Teraki ,  Mitsuhiro Tanaka ,  Noriyuki Okuda

IPC分类号： F28D15/00 ,  B23P15/26

CPC分类号： H05K7/20254 ,  F28D15/0233 ,  F28D15/0275 ,  F28F3/12 ,  H01L23/473 ,  H01L2924/0002 ,  H05K7/209 ,  Y10T29/49359 ,  Y10T29/53113 ,  H01L2924/00

摘要： A cooling member includes a heat-transfer member having a groove and a refrigerant introducing pipe pressed into the groove. The refrigerant introducing pipe has a pressed region positioned inwardly of the edge of the heat-transfer member, and at least one curbed surface portion. A method for manufacturing a cooling member includes preparing a punch having at least one curved corner and a pressing surface, positioning the corner, and moving the punch closer to the groove to press the refrigerant introducing pipe into the groove with the pressing surface. A device for manufacturing a cooling member includes the punch and a support configured to support the heat-transfer member so the groove is positioned opposite the punch.

摘要翻译： 冷却构件包括具有凹槽的传热构件和压入槽中的制冷剂引入管。 制冷剂导入管具有位于传热构件的边缘的内侧的压制区域和至少一个弯曲表面部分。 制造冷却构件的方法包括：制备具有至少一个弯曲角和冲压表面的冲头，定位角部，并且使冲头移动到更靠近凹槽的位置，以将压制表面压入制冷剂导入管。 用于制造冷却构件的装置包括冲头和构造成支撑传热构件的支撑件，使得凹槽与冲头相对定位。

公开(公告)号：US20100072493A1

公开(公告)日：2010-03-25

申请号：US12442870

申请日：2007-09-25

申请人： Tadayoshi Miyamoto ,  Mitsuhiro Tanaka

发明人： Tadayoshi Miyamoto ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00 ,  H01L21/8232

CPC分类号： H01L27/124 ,  G02F1/136204

摘要： In an active matrix substrate (100) of the present invention, a gate bus line (105) and a gate electrode (166) extend in the first direction (the x direction). At a contact portion (168) for electrically connecting the gate bus line (105) with the drain regions of a first-conductivity-type transistor section (162) and a second-conductivity-type transistor section (164), the direction of the straight line (L1) of the shortest distance (d1) between one of a plurality of first-conductivity-type drain connecting portions (168c) that is closest to the gate bus line (105) and the gate bus line (105) is inclined with respect to the second direction (the y direction).

摘要翻译： 在本发明的有源矩阵基板（100）中，栅极总线（105）和栅电极（166）沿第一方向（x方向）延伸。 在用于将栅极总线（105）与第一导电型晶体管部分（162）和第二导电型晶体管部分（164）的漏极区域电连接的接触部分（168）处， 与栅极总线（105）最接近的多个第一导电型漏极连接部（168c）中的一个与栅极总线（105）之间的最短距离（d1）的直线（L1）倾斜 相对于第二方向（y方向）。

公开(公告)号：US07612448B2

公开(公告)日：2009-11-03

申请号：US11791844

申请日：2005-12-01

申请人： Junichi Teraki ,  Mitsuhiro Tanaka

发明人： Junichi Teraki ,  Mitsuhiro Tanaka

IPC分类号： H01L31/111 ,  H01L25/07 ,  H01L25/16 ,  H05K1/02 ,  H05K7/14 ,  H05K7/20

CPC分类号： H01L25/072 ,  H01L23/3677 ,  H01L23/473 ,  H01L24/48 ,  H01L25/162 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/0206 ,  H05K1/021 ,  H05K1/0272 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/0061 ,  H05K7/20927 ,  H05K2201/064 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power module includes a power semiconductor, a non-power semiconductor, one resin substrate, and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply circuit for performing power conversion. Both the power semiconductor and the non-power semiconductor are mounted on the resin substrate. The cooling device is disposed in order to cool the power semiconductor.

摘要翻译： 功率模块包括功率半导体，非功率半导体，一个树脂基板和冷却装置。 功率半导体和非功率半导体构成用于进行电力转换的电源电路。 功率半导体和非功率半导体都安装在树脂基板上。 设置冷却装置以冷却功率半导体。

公开(公告)号：US07438761B2

公开(公告)日：2008-10-21

申请号：US11324940

申请日：2006-01-04

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： C30B25/02 ,  C30B25/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1008

摘要： A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

摘要翻译： 将氯化氢气体和氨气与载气一起引入反应器中，在反应器中通过导管将基底和至少一种铝金属材料。 然后，通过加热器加热氢气和氨气，因此，使用氢化物​​气相外延法在基板上外延生长至少包含Al元素的III-V族氮化物膜。 整个反应器由氮化铝材料制成，其不会遭受铝金属材料与氯化氢气体的反应产生的氯化铝气体的腐蚀。

公开(公告)号：US07317501B2

公开(公告)日：2008-01-08

申请号：US09841666

申请日：2001-04-24

申请人： Mitsuhiro Tanaka ,  Yuji Saai

发明人： Mitsuhiro Tanaka ,  Yuji Saai

IPC分类号： G02F1/133 ,  B32B3/00 ,  B31F1/20

CPC分类号： G02B5/08 ,  G02F1/133553 ,  Y10T428/24612

摘要： An object of the invention is to provide a light reflective film which can prevent moire fringes from occurring. A rough face in which a plurality of rows of pyramidal convex portions that are linearly continuous are adjacently formed in parallel with one another is formed on one face of a die film. The rows of convex portions that are linearly continuous are inclined at a predetermined angle with respect to an edge of the die film. An optical film is produced by transferring the die film. A light reflective film is produced by vapor-depositing a light reflection film on the optical film. In a liquid crystal display panel having the light reflective film, the pitch of occurring moire fringes becomes so small that the moire fringes cannot be visually seen, and moire fringes can be prevented from occurring.

摘要翻译： 本发明的目的是提供一种能够防止发生莫尔条纹的光反射膜。 在模膜的一个面上形成有多个直线连续的多列锥形凸部相互平行地形成的粗糙面。 线状连续的各列的凸部相对于模膜的边缘以规定的角度倾斜。 通过转移模片来制造光学膜。 通过在光学膜上气相沉积光反射膜来制造光反射膜。 在具有光反射膜的液晶显示面板中，出现的莫尔条纹的间距变得如此之小，使得无法在视觉上看到莫尔条纹，并且可以防止产生莫尔条纹。

公开(公告)号：US06943366B2

公开(公告)日：2005-09-13

申请号：US10813565

申请日：2004-03-30

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： C23C14/06 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L29/06 ,  H01L31/109 ,  H01L31/336 ,  H01L31/72

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

摘要翻译： 包含至少Al的III族氮化物底层，其位错密度为<= 1×10 11 / cm 2，和（002）面X射线摇摆曲线半宽 在集合的基材上形成<= 200秒的值。 在III族氮化物底层上方形成p型半导体层组，并且包括III族氮化物，其中Ga含量相对于总III族元素> 50％，载流子密度> 1×10 ^{16/3/3 3。 在p型半导体层组上形成发光层，并且包含多个相互隔离的岛状晶体。 在发光层上形成n型半导体层组，并且包含相对于> = 50％的总III族元素的Ga含量。}

公开(公告)号：US06815867B2

公开(公告)日：2004-11-09

申请号：US09997997

申请日：2001-11-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L4108

CPC分类号： H03H9/02543 ,  Y10T29/42

摘要： A base material made of C-faced sapphire single crystal is set on a susceptor installed in a reactor arranged horizontally. Then, a trimethyl-aluminum and an ammonia are introduced as raw material gases into the reactor and supplied onto the substrate, to form an AlN film. In this case, the temperature of the base material is set to 1100° C. or over, and the ratio (V raw material gas/III raw material gas) is set to 800 or below, and the forming pressure is set within a range of 7-17 Torr. As a result, the crystallinity of the AlN film is developed to 90 arcsec or below in FWHM of X-ray rocking curve, and the surface flatness of the AlN film is developed to 20 Å or below. Therefore, a substrate composed of the base material and the AlN film is preferably usable for an acoustic surface wave device, and if the substrate is employed, the deviation from the theoretical propagation velocity is set to 1.5 m/sec or below.

摘要翻译： 将由C面蓝宝石单晶构成的基材设置在安装在水平排列的反应器中的基座上。 然后，将三甲基铝和氨作为原料气体引入反应器中并供给到基板上，形成AlN膜。 在这种情况下，将基材的温度设定为1100℃以上，将原料气体/ III原料气体的比率设定为800以下，将成形压力设定在 7-17 Torr。 结果，在X射线摇摆曲线的FWHM中，AlN膜的结晶度显现为90弧秒以下，AlN膜的表面平坦度显现为20以下。 因此，由基材和AlN膜构成的基板优选用于声表面波器件，如果使用基板，则与理论传播速度的偏差设定为1.5m / sec以下。

公开(公告)号：US06781164B2

公开(公告)日：2004-08-24

申请号：US10690290

申请日：2003-10-21

申请人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01L31072

CPC分类号： H01L29/66318 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/66856

摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

摘要翻译： 将作为底层的AlN膜外延生长在具有10 11 / cm 2以下的位错密度和90秒以下的结晶度的X射线的半峰全宽（FWHM）的基板上 （002）反射的摇摆曲线。 然后，在AlN膜上，将n-GaN膜外延生长为位错密度为10 10 / cm 2以下的导电层，在半高宽度下为150秒以下的结晶度（FWHM ）（002）反射的X射线摇摆曲线，以制造半导体元件。