公开(公告)号：US08487692B1

公开(公告)日：2013-07-16

申请号：US13594869

申请日：2012-08-26

申请人： Chih-Ning Chen ,  Yen-Ming Chen

发明人： Chih-Ning Chen ,  Yen-Ming Chen

IPC分类号： G05F1/10

CPC分类号： H03K17/164 ,  G05F1/468 ,  G05F3/08

摘要： A charging circuit includes a first current mirror for receiving an input voltage, a second current mirror including a first branch circuit and a second branch circuit for receiving the input voltage, a switch transistor coupled to the first current mirror and the first branch circuit for determining a conduction condition of the switch transistor according to a switch signal, a first resistor including a first resistance and one end coupled to the switch transistor, and a second resistor including a second resistance and one end coupled the second branch circuit of the second current mirror, wherein the first current mirror and the second current mirror perform a charging operation of a loading circuit according to the first resistance and the second resistance.

摘要翻译： 充电电路包括用于接收输入电压的第一电流镜，包括第一分支电路的第二电流镜和用于接收输入电压的第二分支电路，耦合到第一电流镜和第一分支电路的开关晶体管，用于确定 根据开关信号的开关晶体管的导通条件，包括第一电阻和耦合到开关晶体管的一端的第一电阻器，以及包括第二电阻器和第一电阻器的第二电阻器，其耦合第二电流镜的第二分支电路 其中，所述第一电流镜和所述第二电流镜根据所述第一电阻和所述第二电阻进行负载电路的充电操作。

公开(公告)号：US20130052825A1

公开(公告)日：2013-02-28

申请号：US13220692

申请日：2011-08-30

申请人： Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chun-Wei Hsu ,  Yen-Ming Chen ,  Chih-Hsun Lin ,  Chang-Hung Kung

发明人： Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chun-Wei Hsu ,  Yen-Ming Chen ,  Chih-Hsun Lin ,  Chang-Hung Kung

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  H01L21/3105 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/7684 ,  H01L21/823835 ,  H01L29/665

摘要： A semiconductor process includes the following steps. A first gate structure and a second gate structure are formed on a substrate, wherein the top of the first gate structure includes a cap layer, so that the vertical height of the first gate structure is higher than the vertical height of the second gate structure. An interdielectric layer is formed on the substrate. A first chemical mechanical polishing process is performed to expose the top surface of the cap layer. A second chemical mechanical polishing process is performed to expose the top surface of the second gate structure or an etching process is performed to remove the interdielectric layer located on the second gate structure. A second chemical mechanical polishing process is then performed to remove the cap layer.

摘要翻译： 半导体工艺包括以下步骤。 第一栅极结构和第二栅极结构形成在基板上，其中第一栅极结构的顶部包括盖层，使得第一栅极结构的垂直高度高于第二栅极结构的垂直高度。 在基板上形成介电层。 执行第一化学机械抛光工艺以暴露盖层的顶表面。 执行第二化学机械抛光工艺以暴露第二栅极结构的顶表面，或执行蚀刻工艺以去除位于第二栅极结构上的介电层。 然后执行第二化学机械抛光工艺以除去盖层。

公开(公告)号：US08236659B2

公开(公告)日：2012-08-07

申请号：US12816519

申请日：2010-06-16

申请人： Ming-Huan Tsai ,  Chun-Fai Cheng ,  Hui Ouyang ,  Yuan-Hung Chiu ,  Yen-Ming Chen

发明人： Ming-Huan Tsai ,  Chun-Fai Cheng ,  Hui Ouyang ,  Yuan-Hung Chiu ,  Yen-Ming Chen

IPC分类号： H01L21/336

CPC分类号： H01L29/66515 ,  H01L21/265 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.

摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 所公开的方法提供对集成电路器件的表面接近度和尖端深度的改进的控制。 在一个实施例中，该方法通过在器件的源极和漏极区域中形成掺杂区域和轻掺杂源极和漏极（LDD）区域来实现改进的控制。 掺杂区域注入与LDD区域相反的掺杂剂类型。

公开(公告)号：US07906425B2

公开(公告)日：2011-03-15

申请号：US11581122

申请日：2006-10-13

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

IPC分类号： H01L21/00

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

摘要翻译： 一种方法，包括提供包括接合焊盘的半导体器件和覆盖在焊盘上的凸块下金属。 在凸块下冶金上形成焊料结构，其中焊料结构包括包含氧化锡的外层。 从CF4和SF6中的至少一种制造等离子体，并将焊料结构暴露于等离子体。 加热焊料结构并对其进行冷却以在半导体器件上提供焊料凸块。

公开(公告)号：US20090111208A1

公开(公告)日：2009-04-30

申请号：US12347468

申请日：2008-12-31

申请人： Yang-Tung FAN ,  Chiou-Shian Peng ,  Cheng-Yu Chu ,  Shih-Jane Lin ,  Yen-Ming Chen ,  Fu-Jier Fan ,  Kuo-Wei Lin

发明人： Yang-Tung FAN ,  Chiou-Shian Peng ,  Cheng-Yu Chu ,  Shih-Jane Lin ,  Yen-Ming Chen ,  Fu-Jier Fan ,  Kuo-Wei Lin

IPC分类号： H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/02162 ,  H01L31/02327

摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.

摘要翻译： 公开了一种有序的微电子制造顺序，其中滤色器通过直角沉积直接形成在CCD，CID或CMOS成像装置的光电检测器阵列上以形成凹入像素表面，并且覆盖有高透光率平面化膜 指定的折射率和物理性质，其优化光收集到光电二极管而不需要额外的常规微透镜。 光学平坦的顶表面用于封装和保护成像器免受化学和热清洁处理损伤，最小化形成的底层变化，其将形成在非平面表面上的图像的像差或引起反射损失，并且消除在切割期间引起的残留颗粒夹杂物， 打包。 通过在半导体衬底上光刻地构图光电二极管平面阵列来形成CCD成像器。 光电二极管阵列设置有金属遮光罩，钝化，并且在其上形成滤色器。 沉积透明密封剂以平坦化滤色器层并完成固态彩色图像形成装置，而不需要常规的凸起的微透镜。

公开(公告)号：US07460070B2

公开(公告)日：2008-12-02

申请号：US11598019

申请日：2006-11-13

申请人： Yen-Ming Chen ,  Chao-Wei Wang ,  Chang-Fa Yang ,  Shun-Iian Lin ,  Chuan-Lin Hu ,  Chang-Lun Liao ,  Yu-Wei Chen

发明人： Yen-Ming Chen ,  Chao-Wei Wang ,  Chang-Fa Yang ,  Shun-Iian Lin ,  Chuan-Lin Hu ,  Chang-Lun Liao ,  Yu-Wei Chen

IPC分类号： H01Q1/38

CPC分类号： H01Q1/38

摘要： A chip antenna has a dielectric material layer, a first meandered strip, a second meandered strip and several bended strips. The first meandered strip is meandered in one direction and disposed on the dielectric material layer. The second meandered strip is meandered in another direction and disposed on the dielectric material layer. The first meandered strip is connected to the second meandered strip. The bended strips are connected to the turns of the meandered strips.

摘要翻译： 芯片天线具有电介质材料层，第一弯曲带，第二弯曲带和几个弯曲带。 第一个曲折条在一个方向上蜿蜒并且放置在电介质材料层上。 第二个曲折条在另一个方向上蜿蜒并设置在电介质材料层上。 第一个曲折条连接到第二条曲折条。 弯曲的条带连接到蜿蜒的条纹。

公开(公告)号：US07276454B2

公开(公告)日：2007-10-02

申请号：US10286626

申请日：2002-11-02

申请人： Kai-Ming Ching ,  Chia Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

发明人： Kai-Ming Ching ,  Chia Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

IPC分类号： H01L21/302

CPC分类号： H01L23/544 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05671 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.

摘要翻译： 提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。 在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。 施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

公开(公告)号：US20070120155A1

公开(公告)日：2007-05-31

申请号：US11642225

申请日：2006-12-20

申请人： Yang-Tung Fan ,  Chiou-Shian Peng ,  Chen-Yu Chu ,  Shih-Jane Lin ,  Yen-Ming Chen ,  Fu-Jier Fan ,  Kuo-Wei Lin

发明人： Yang-Tung Fan ,  Chiou-Shian Peng ,  Chen-Yu Chu ,  Shih-Jane Lin ,  Yen-Ming Chen ,  Fu-Jier Fan ,  Kuo-Wei Lin

IPC分类号： H01L29/76

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/02162 ,  H01L31/02327

摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.

公开(公告)号：US07220650B2

公开(公告)日：2007-05-22

申请号：US10821438

申请日：2004-04-09

申请人： Rong-Hui Kao ,  Chang-Sheng Tsao ,  Yen-Ming Chen ,  Lin-June Wu

发明人： Rong-Hui Kao ,  Chang-Sheng Tsao ,  Yen-Ming Chen ,  Lin-June Wu

IPC分类号： H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/2652 ,  H01L29/6656

摘要： An offset spacer layer for an LDD ion implantation process is formed by blanket deposition without photolithography and dry etch processes. The offset spacer layer remaining on LDD regions during an ion implantation process prevents a substrate from silicon loss and dosage contamination and has densified characteristics to improve device reliability.

摘要翻译： 用于LDD离子注入工艺的偏移间隔层通过无光刻和干蚀刻工艺的覆盖沉积形成。 在离子注入工艺期间残留在LDD区域上的偏移间隔层防止了衬底的硅损耗和剂量污染，并具有致密的特性以提高器件的可靠性。

公开(公告)号：US07183598B2

公开(公告)日：2007-02-27

申请号：US11037445

申请日：2005-01-18

申请人： Yang-Tung Fan ,  Chiou-Shian Peng ,  Cheng-Yu Chu ,  Shih-Jane Lin ,  Yen-Ming Chen ,  Fu-Jier Fan ,  Kuo-Wei Lin

发明人： Yang-Tung Fan ,  Chiou-Shian Peng ,  Cheng-Yu Chu ,  Shih-Jane Lin ,  Yen-Ming Chen ,  Fu-Jier Fan ,  Kuo-Wei Lin

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/02162 ,  H01L31/02327

摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.

摘要翻译： 公开了一种有序的微电子制造顺序，其中滤色器通过直角沉积直接形成在CCD，CID或CMOS成像装置的光电检测器阵列上以形成凹入像素表面，并且覆盖有高透光率平面化膜 指定的折射率和物理性质，其优化光收集到光电二极管而不需要额外的常规微透镜。 光学平坦的顶表面用于封装和保护成像器免受化学和热清洁处理损伤，最小化形成的底层变化，其将形成在非平面表面上的图像的像差或引起反射损失，并且消除在切割期间引起的残留颗粒夹杂物， 打包。 通过在半导体衬底上光刻地构图光电二极管平面阵列来形成CCD成像器。 光电二极管阵列设置有金属遮光罩，钝化，并且在其上形成滤色器。 沉积透明密封剂以平坦化滤色器层并完成固态彩色图像形成装置，而不需要常规的凸起的微透镜。