摘要:
To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1-xNax)yNbO3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.
摘要翻译:为了在基板上提供具有由组成式(K1-xNax)yNbO3表示的碱金属氧化铌基钙钛矿结构的压电薄膜,其中由(K1-xNax)yNbO3表示的压电薄膜的组成比x 在0.4 @ x @ 0.7的范围内,并且通过X射线衍射测量的(001)面的摇摆曲线的半宽度在0.5°以上且2.5°以下的范围内。
摘要:
Systems, methods, and circuits for command control for synchronous memory device are disclosed. In one embodiment, a memory device comprises a first synchronous memory controlled by a second group of commands which includes a first command receiving section for receiving a first group of commands, and a second command receiving section for receiving a command that is unique to the first synchronous memory and different from the first group of commands during execution of the first group of commands received by the first command receiving section. The synchronous memory further comprises a second synchronous memory controlled by the first group of commands, where the first synchronous memory and the second synchronous memory are coupled to a same data bus, and where the second group of commands is different from the first group of commands.
摘要:
A manufacturing method of a piezoelectric film element includes forming a lower electrode on a substrate, forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure on the lower electrode, forming a mask pattern on the piezoelectric film, dry-etching the piezoelectric film via the mask pattern, removing the mask pattern after the dry etching, and heat-treating the piezoelectric film in an oxidizing atmosphere. A manufacturing method of a piezoelectric device includes forming an upper electrode on the piezoelectric film of the piezoelectric film element formed by the manufacturing method of the piezoelectric film element, and connecting an electric voltage applying means or an electric voltage detecting means to the lower electrode and the upper electrode.
摘要:
A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode laminated thereon, wherein the piezoelectric thin film has a crystal structure of any one of a pseudo-cubic crystal, a tetragonal crystal, or an orthorhombic crystal, or has a crystal structure of coexistence of at least two of the pseudo-cubic crystal, the tetragonal crystal, or the orthorhombic crystal, and in such crystal structures, there is a coexistence of (001) oriented crystal grains oriented in (001) direction, and (111) oriented crystal grains oriented in (111) direction, with an angle formed by at least one of the crystal axes of the crystal grains and a normal line of the substrate surface set to be in a range of 0° to 10°.
摘要:
To smoothly deliver a thermal energy required in an active site of a catalyst carried on a carrier. A method of manufacturing a catalyst carrier of the present invention includes the steps of: forming a mixed thin film in which at least metal and ceramics are mixed on a metal base, by spraying aerosol, with metal powders and ceramic powders mixed therein, on the metal base; and making the mixed thin film porous, by dissolving the metal of the mixed thin film into acid or alkaline solution to remove this metal.
摘要:
A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.
摘要翻译:压电薄膜元件包括底电极,压电层和衬底上的顶电极。 压电层包括由(NaxKyLiz)NbO 3(0≦̸ x≦̸ 1,0& nlE; y≦̸ 1,0& nlE; z≦̸ 0.2,x + y + z = 1)表示的钙钛矿型氧化物, 电极包括算术平均粗糙度Ra不大于0.86nm的表面粗糙度或均方根粗糙度Rms不大于1.1nm的表面粗糙度。
摘要:
In an in-liquid plasma film-forming apparatus having: a vessel 1 being capable of accommodating a substrate “S” and a liquid “L” including raw material therein; an electrode 2 for in-liquid plasma, electrode 2 which is disposed in the vessel 1; an electric power device 3 for supplying electricity to the electrode 2 for in-liquid plasma; the electrode 2 for in-liquid plasma is equipped with: a main electrode 21 having a discharging end 22; an auxiliary electrode 26 not only facing the discharging end 22 but also being disposed between the discharging end 22 and the substrate “S” that face each other; and a plasma generating unit 29 having a space that is demarcated by a surface 22a of the discharging end 22 and a surface 26a of the auxiliary electrode 26 facing the surface 22a, and being for generating plasma by means of electricity being supplied to the main electrode 21. And, a decomposed component of the raw material is deposited onto a surface of the substrate “S” by contacting the plasma, which has generated at the plasma generating unit 29, with the substrate “S.”By means of the present construction, it becomes feasible to generate plasma in liquid without ever using a second electrode that serves as a substrate.
摘要:
The present invention provides a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a compound having an adenosine uptake inhibitory activity, a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a tricyclic compound represented by formula (I) [wherein L represents —NHC(═O)— or the like, R1 represents a hydrogen atom, halogen, or the like, X1—X2—X3 represents S—CR7═CR8 (wherein R7 and R8 may be the same or different and each represents a hydrogen atom, halogen, substituted or unsubstituted lower alkyl, or the like), or the like, Y represents —CH2SO2—, —SO2CH2— or the like, R2 represents substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkoxy, substituted or unsubstituted aryl, or the like] or a pharmaceutically acceptable salt thereof, and the like.
摘要:
A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
摘要:
A recombinant antibody or the antibody fragment thereof which specifically reacts with an extracellular domain of human CCR4; a DNA which encodes the recombinant antibody or the antibody fragment thereof; a method for producing the recombinant antibody or the antibody fragment thereof; a method for immunologically detecting CCR4, a method for immunologically detecting a cell which expressed CCR4 on the cell surface, a method for depleting a cell which expresses CCR4 on the cell surface, and a method for inhibiting production of Th2 cytokine, which comprise using the recombinant antibody according or antibody fragment thereof; a therapeutic or diagnostic agent for Th2-mediated immune diseases; and a therapeutic or diagnostic agent for a blood cancer.