摘要:
A control system for a supercharged internal combustion engine provided with a main exhaust passage (20) extending through a turbocharger turbine (21) and further through a catalyst (23, 24) to open to the outside air, an exhaust bypass passage (25) by passing the turbocharger turbine by branching from the main exhaust passage at the upstream side of the turbine and merging with the main exhaust passage before reaching the catalyst at the turbine downstream side, and an exhaust bypass valve (26) provided at the exhaust bypass passage, the control system for a supercharged internal combustion engine controlling the ignition timing in accordance with at least one of the engine warmup state and the catalyst warmup state until warmup of the internal combustion engine and warmup of the catalyst are completed and further controlling the opening degree of the exhaust bypass valve based on the control of the ignition timing, is provided.
摘要:
A method for designing a mask pattern realizes shortening the ever-growing time for the OPC treatment, decreases the fabrication TAT of a semiconductor device and cuts cost. A method for fabricating a semiconductor device uses the mask pattern designed. This invention performs the OPC treatment in advance on a cell library constituting the basic configuration of a semiconductor circuit pattern and prepares a semiconductor chip using the cell library that has undergone the OPC treatment. The method for designing a mask pattern includes the steps of designing a cell library pattern by executing for each of the cell libraries a treatment for correcting proximity effect directed to correcting the change of shape taking place during the formation of a pattern by the exposure of a mask pattern, designing a mask pattern by laying out the cell libraries and changing the amount of correction of proximity effect applied to the cell libraries in consideration of the influence of the cell library patterns disposed peripherally. This treatment for correction is executed by the degree of influence exerted by surrounding patterns collected in advance and the genetic algorithm.
摘要:
A semiconductor chip is manufactured using a cell library pattern obtained by performing OPC (optical proximity correction) process at the time of a cell single arrangement to a cell library pattern which forms a basic structure of a semiconductor circuit pattern in advance. A plurality of cell libraries are arranged to design a mask pattern and a correction amount of OPC performed to the cell libraries is changed with taking into account the influence of a pattern of cell libraries arranged around a target cell. Further, a cell group with the same arrangement of surrounding cells including the target cell is extracted and is registered as a cell set, and a cell set with the same cell arrangement as that of the registered cell set is produced by copying without re-calculating OPC inside the cell set.
摘要:
A high-frequency switch circuit is provided for switching a connection between a common transmission circuit and antenna side circuit in a plurality of transmitting and receiving systems. The high-frequency switch includes a connection between the antenna side circuit and a reception circuit in one of the plurality of transmitting and receiving systems, and a connection between the antenna side circuit and a reception circuit in the other of the plurality of transmitting and receiving systems, the high-frequency switch circuit comprising a first diode; a first distributed constant line; a second diode; a capacitor; a third diode; a second distributed constant line; and a fourth diode.
摘要:
In a masking pattern (a) for patterning word and data lines, length is changed between adjacent word lines so as to be shifted from each other at their tips, and furthermore, the tip of each word line is cut obliquely.It is thus possible to prevent the resist pattern from separation and contact of adjacent patterns. Consequently, it is also possible to prevent break failures of patterned lines and short failures between those patterned lines.
摘要:
The present invention provides a defect inspection apparatus comprising an inspection section which inspects a front surface and a rear surface of a sample, a control section which processes image data on the front surface and rear surface of the sample obtained by the inspection section, moving section provided in the inspection section and capable of reciprocating the sample, illumination section which illuminates the front surface and rear surface of the sample moved by the moving section, and image pickup section which picks up images of the front surface and rear surface of the sample illuminated by the illumination section, wherein at least one of an incidence angle of the illumination section on the sample and an image pickup angle of the image pickup section to the sample is changeable.
摘要:
A high-frequency switch circuit is provided for switching a connection between a common transmission circuit and antenna side circuit in a plurality of transmitting and receiving systems. The high-frequency switch includes a connection between the antenna side circuit and a reception circuit in one of the plurality of transmitting and receiving systems, and a connection between the antenna side circuit and a reception circuit in the other of the plurality of transmitting and receiving systems, the high-frequency switch circuit comprising a first diode; a first distributed constant line; a second diode; a capacitor; a third diode; a second distributed constant line; and a fourth diode.
摘要:
A high-frequency switch circuit is provided for switching a connection between a common transmission circuit and an antenna side circuit in a plurality of transmitting and receiving systems. The high-frequency switch includes a connection between the antenna side circuit and a reception circuit in one of the plurality of transmitting and receiving systems, and a connection between the antenna side circuit and a reception circuit in the other of the plurality of transmitting and receiving systems, the high-frequency switch circuit comprising a first diode, a second diode, and a distributed constant line, wherein a third diode is connected to the first and second diodes through the distributed constant line.
摘要:
In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with a light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
摘要:
Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.