公开(公告)号：US5980687A

公开(公告)日：1999-11-09

申请号：US66736

申请日：1998-04-27

申请人： Chishio Koshimizu

发明人： Chishio Koshimizu

IPC分类号： H01L21/302 ,  C23C14/22 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065 ,  C23F1/02 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01J37/3266 ,  C23C14/22 ,  C23C16/45589 ,  H01J37/3244 ,  H01J37/32623

摘要： A plasma process apparatus includes first and second electrodes or susceptors located in a process container with a space interposed therebetween, first and second electrodes being disposed to support a semiconductor wafer such that the wafers are opposed to each other through a plasma a generating region. A high frequency voltages are applied to the first and second electrodes to supply a high frequency power to the plasma generating region, and a rotating magnetic field is generated in the plasma generating region, so that the high frequency power and the rotating magnetic field generate plasma of a process gas in the plasma generating region. Compensating-process-gas supply mechanism is provided for supplying a compensating process gas to part of the plasma generating region in synchronism with the rotation of the rotating magnetic field to compensate nonuniformity in the density of plasma generated in the plasma generating region.

摘要翻译： 等离子体处理装置包括位于处理容器中的第一和第二电极或基座，其中插入有空间，第一和第二电极设置成支撑半导体晶片，使得晶片通过等离子体产生区彼此相对。 向第一和第二电极施加高频电压以向等离子体产生区域提供高频电力，并且在等离子体产生区域中产生旋转磁场，使得高频功率和旋转磁场产生等离子体 的等离子体产生区域中的工艺气体。 提供了补偿处理气体供给机构，用于与等离子体产生区域中产生的等离子体的密度的不均匀性同步地与旋转磁场的旋转同步地向补偿处理气体供给等离子体产生区域的一部分。

公开(公告)号：US5290383A

公开(公告)日：1994-03-01

申请号：US48711

申请日：1993-04-19

申请人： Chishio Koshimizu

发明人： Chishio Koshimizu

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L21/31116 ,  Y10S156/916

摘要： In one aspect of the invention, CHF.sub.3 gas and CF.sub.4 gas (i.e., reactant gases), and argon gas (i.e., plasma-stabilizing gas) are introduced into a vacuum chamber. RF power is then applied between the electrodes within the chamber, thereby generating plasma. The plasma is applied to a substrate placed in the chamber, thus etching the SiO.sub.2 film formed on the substrate. A spectrometer extracts a light beam of a desired wavelength, emitted from the CF.sub.2 radical which contributes to the etching. An end-point detecting section monitors the luminous intensity of the CF.sub.2 radical reacting with SiO.sub.2 during the etching. Once the SiO.sub.2 film has been etched away, the luminous intensity of the CF.sub.2 radical increases. Upon detecting this increase, the section determines that etching has just ended. The selected wavelength ranges from 310 nm to 236 nm, preferably being 219.0 nm, 230.0 nm, 211.2 nm, 232.5 nm, or any one ranging from 224 nm to 229 nm. In another aspect of the invention, the device attached to the observation window of the chamber removes products stuck to the window during the etching. The window thus cleaned, more light than otherwise passes through the window and reaches the spectrometer. This enables the section to detect even a slight change in the luminous intensity of the CF.sub.2 radical, thereby detecting the end point of etching with accuracy.

摘要翻译： 在本发明的一个方面，将CHF 3气体和CF 4气体（即反应气体）和氩气（即等离子体稳定气体）引入真空室。 然后将RF功率施加在室内的电极之间，从而产生等离子体。 将等离子体施加到放置在室中的衬底上，从而蚀刻形成在衬底上的SiO 2膜。 光谱仪提取从有助于蚀刻的CF 2自由基发射的期望波长的光束。 终点检测部分在蚀刻期间监测与SiO 2反应的CF 2自由基的发光强度。 一旦SiO 2膜被蚀刻掉，CF2自由基的发光强度就会增加。 在检测到这种增加时，该部分确定蚀刻刚刚结束。 所选择的波长范围为310nm至236nm，优选为219.0nm，230.0nm，211.2nm，232.5nm或224nm至229nm的任何一个。 在本发明的另一方面，连接到室的观察窗的装置在蚀刻期间去除粘附到窗口的产物。 如此清洁的窗户，比其他方式更光线通过窗户并到达光谱仪。 这使得该部分甚至可以检测到CF2基团的发光强度的轻微变化，从而精确地检测蚀刻的终点。

公开(公告)号：US09349618B2

公开(公告)日：2016-05-24

申请号：US13344267

申请日：2012-01-05

申请人： Jun Yamawaku ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32642 ,  H01L21/68735

摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.

摘要翻译： 一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。 在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件， 聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。

公开(公告)号：US08790490B2

公开(公告)日：2014-07-29

申请号：US13396181

申请日：2012-02-14

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20120145679A1

公开(公告)日：2012-06-14

申请号：US13403588

申请日：2012-02-23

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： B23K9/00

CPC分类号： H01J37/32165 ,  H01J37/32082

摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

摘要翻译： 在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底 面对第一个电极。 第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。 此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。 此外，电感器电连接在第一电极和地电位之间。

公开(公告)号：US08164033B2

公开(公告)日：2012-04-24

申请号：US13097251

申请日：2011-04-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： H05B1/02

CPC分类号： F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

摘要翻译： 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US08138445B2

公开(公告)日：2012-03-20

申请号：US11694153

申请日：2007-03-30

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： B23K10/00

CPC分类号： H01J37/32165 ,  H01J37/32082

摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

摘要翻译： 在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底 面对第一个电极。 第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。 此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。 此外，电感器电连接在第一电极和地电位之间。

公开(公告)号：US07993489B2

公开(公告)日：2011-08-09

申请号：US11393673

申请日：2006-03-31

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H05B31/26

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334

摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

摘要翻译： 等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。 第一电极和第二电极在处理容器内彼此相对设置。 第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。 处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

公开(公告)号：US07951262B2

公开(公告)日：2011-05-31

申请号：US11156561

申请日：2005-06-21

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3065

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20090237496A1

公开(公告)日：2009-09-24

申请号：US12407476

申请日：2009-03-19

申请人： Yohei YAMAZAWA ,  Chishio Koshimizu

发明人： Yohei YAMAZAWA ,  Chishio Koshimizu

IPC分类号： H04N7/18

CPC分类号： G01N21/68 ,  G01N2021/1765 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67253

摘要： An observation substrate for observation capable of observing an overall plasma emission distribution. An observation wafer for observing a plasma emission state in a processing space of a process module of a substrate processing system includes a base and a plurality of image pickup units disposed on a surface of the base facing the processing space. Each of the image pickup units includes a lens and an image pickup device having a memory for storing a picked-up image.

摘要翻译： 一种用于观察等离子体发射分布的观察用基板。 用于观察基板处理系统的处理模块的处理空间中的等离子体发射状态的观察晶片包括设置在面向处理空间的基板的表面上的基座和多个图像拾取单元。 每个图像拾取单元包括透镜和具有用于存储拾取图像的存储器的图像拾取装置。