公开(公告)号：US07718559B2

公开(公告)日：2010-05-18

申请号：US11738030

申请日：2007-04-20

申请人： Jie Yuan ,  Jennifer Y. Sun ,  Renguan Duan

发明人： Jie Yuan ,  Jennifer Y. Sun ,  Renguan Duan

IPC分类号： C03C3/06 ,  C03C3/04

CPC分类号： C03C3/06 ,  C03B32/00 ,  C03B2201/24 ,  C03B2201/34 ,  C03B2201/36 ,  C03C2201/3411 ,  C03C2201/36 ,  C03C2203/54 ,  H01L21/67069 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68757 ,  Y02P40/57 ,  Y10S156/915

摘要： A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.

摘要翻译： 本文提供了一种制造掺杂石英组分的方法。 在一个实施例中，掺杂的石英组件是被配置为支撑衬底的掺钇的石英环。 在另一个实施例中，掺杂的石英组件是掺钇和铝的覆盖环。 在另一个实施方案中，掺杂的石英组分是含钇，铝和氮的覆盖环。

公开(公告)号：US20080264564A1

公开(公告)日：2008-10-30

申请号：US11796210

申请日：2007-04-27

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/48 ,  H01L21/3065

CPC分类号： C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

摘要： A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

摘要翻译： 用于半导体加工的陶瓷制品，其耐受含卤素等离子体的侵蚀。 陶瓷制品由氧化钇和氧化锆的组合形成。 在第一个实施方案中，陶瓷制品包括由摩尔浓度为约90摩尔％至约70摩尔％的氧化钇形成的陶瓷，摩尔浓度为约10摩尔％至约30摩尔％的氧化锆， 。 在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇 。

公开(公告)号：US20080182418A1

公开(公告)日：2008-07-31

申请号：US11733858

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

摘要： A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.

摘要翻译： 在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。 该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。 该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

公开(公告)号：US20080182417A1

公开(公告)日：2008-07-31

申请号：US11733767

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

摘要： In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.

摘要翻译： 在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生 中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。 调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。

公开(公告)号：US20080179289A1

公开(公告)日：2008-07-31

申请号：US11685769

申请日：2007-03-14

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at an edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a local plasma chamber from a polymer etch precursor gas. The process includes directing a localized stream of an etchant by-product from the first plasma onto a target portion of the backside of the workpiece, the target portion having a diameter corresponding to a diameter of the stream, while rotating the workpiece.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 该方法还包括将工件的边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界 和一个含有背面的下部工艺区。 在聚合物蚀刻前体气体的局部等离子体室中产生第一等离子体。 该方法包括将来自第一等离子体的蚀刻剂副产物的局部流引导到工件的背面的目标部分上，目标部分具有对应于流的直径的直径，同时旋转工件。

公开(公告)号：US20080179287A1

公开(公告)日：2008-07-31

申请号：US11685766

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hirojii Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hirojii Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/0209 ,  H01L21/02063 ,  H01L21/31138

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. Gas flow is confined at the edge of the workpiece within a gap at the edge of the workpiece, the gap configured to be on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. The process further includes evacuating the lower process zone, generating a plasma in an external chamber from a polymer etch precursor gas, and introducing a by-product from the plasma into the lower process zone. The process further includes pumping a purge gas into the upper process zone to remove polymer etch species from the upper process zone.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 气体流动被限制在工件的边缘处的工件边缘的间隙内，该间隙构造成约为室直径的约1％，间隙限定了含有 前侧和一个含有背面的下部工艺区。 该方法进一步包括排空下部工艺区域，从聚合物蚀刻前体气体在外部室中产生等离子体，以及将副产物从等离子体引入下部工艺区域。 该方法还包括将净化气体泵入上部工艺区域以从上部工艺区域去除聚合物蚀刻物质。

公开(公告)号：US06682627B2

公开(公告)日：2004-01-27

申请号：US09962626

申请日：2001-09-24

申请人： Shamouil Shamouilian ,  Jennifer Y. Sun ,  Ananda H. Kumar

发明人： Shamouil Shamouilian ,  Jennifer Y. Sun ,  Ananda H. Kumar

IPC分类号： H05H100

CPC分类号： C04B41/009 ,  C04B41/4842 ,  C04B41/83 ,  H01J37/32467 ,  H01J2237/022 ,  C04B35/00 ,  C04B35/565

摘要： A substrate processing chamber has a substrate support, a gas supply, a gas exhaust, a gas energizer, and a wall about the substrate support, the wall having a porous ceramic material at least partially infiltrated with a fluorinated polymer, whereby a substrate on the substrate support may be processed by gas introduced by the gas supply, energized by the gas energizer, and exhausted by the gas exhaust.

摘要翻译： 衬底处理室具有衬底支撑件，气体供应器，气体排出器，气体激发器和围绕衬底支撑件的壁，所述壁具有至少部分地被氟化聚合物渗透的多孔陶瓷材料，由此， 衬底支撑件可以由气体源引入的气体进行处理，由气体激发器激励并被排气排出。

公开(公告)号：US09520314B2

公开(公告)日：2016-12-13

申请号：US12640496

申请日：2009-12-17

申请人： Jennifer Y. Sun ,  Senh Thach ,  Ren-Guan Duan

发明人： Jennifer Y. Sun ,  Senh Thach ,  Ren-Guan Duan

IPC分类号： H01L21/68 ,  H02N13/00 ,  C09D183/04 ,  H01L21/683

CPC分类号： H01L21/6833 ,  C08K3/22 ,  C08K3/28 ,  C08K2003/2227 ,  C08K2003/282 ,  C09D183/04 ,  C09J11/04 ,  C09J183/04 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23 ,  Y10T279/34

摘要： Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

摘要翻译： 本文提供了用于将静电卡盘结合到基板支撑件的部件的方法和装置。 在一些实施例中，用于粘合基底支撑件的部件的粘合剂可以包括其中分散有填料的硅基聚合物材料的基体。 硅基聚合物材料可以是分子量小于约500ppm的具有低分子量（LMW）含量ΣD3-D10的聚二甲基硅氧烷（PDMS）结构。 在一些实施方案中，填料可以占粘合剂层的约50至约70体积％。 在一些实施例中，填料可以包括氧化铝（Al 2 O 3），氮化铝（AlN），氧化钇（Y 2 O 3）或其组合的颗粒。 在一些实施方案中，填料可以包含直径为约10纳米至约10微米的颗粒。

公开(公告)号：US09017765B2

公开(公告)日：2015-04-28

申请号：US12590200

申请日：2009-11-03

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Kenneth S. Collins

IPC分类号： B05D3/02 ,  C04B41/86 ,  C03C8/00 ,  C04B41/00 ,  C04B41/50

CPC分类号： C04B41/86 ,  C03C8/00 ,  C03C2214/20 ,  C04B41/009 ,  C04B41/5023 ,  H01J37/32477 ,  C04B41/4539 ,  C04B41/5055 ,  C04B35/10 ,  C04B35/00 ,  C04B35/14 ,  C04B35/565 ,  C04B35/584 ,  C04B35/581

摘要： Embodiments of the invention relate to compositions of metal oxyfluoride-comprising glazes or metal fluoride-comprising glazes, glass ceramics, and combinations thereof which are useful as plasma-resistant solid substrates or plasma resistant protective coatings over other substrates. Also described are methods of fabricating various structures which incorporate such compositions, including solid substrates and coatings over the surface of a substrate which has a melting point which is higher than about 1600° C., such as aluminum oxide, aluminum nitride, quartz, silicon carbide, silicon nitride.

摘要翻译： 本发明的实施方案涉及可用作等离子体固体基质或耐等离子体保护涂层超过其它基底的包含氟化of的釉料或含金属氟化物的釉料，玻璃陶瓷及其组合的组合物。 还描述了制造包含这样的组合物的各种结构的方法，其包括在熔点高于约1600℃的基底表面上的固体基质和涂层，例如氧化铝，氮化铝，石英，硅 碳化物，氮化硅。

公开(公告)号：US08758858B2

公开(公告)日：2014-06-24

申请号：US13374980

申请日：2012-01-25

申请人： Jennifer Y. Sun ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves ,  Ren-Guan Duan ,  Senh Thach

发明人： Jennifer Y. Sun ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves ,  Ren-Guan Duan ,  Senh Thach

IPC分类号： B05D3/02

CPC分类号： C23C16/4404 ,  H01J37/32467 ,  H01J37/32477

摘要： A method of creating a plasma-resistant thermal oxide coating on a surface of an article, where the article is comprised of a metal or metal alloy which is typically selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. The oxide coating is formed using a time-temperature profile which includes an initial rapid heating rage, followed by a gradual decrease in heating rate, to produce an oxide coating structure which is columnar in nature. The grain size of the crystals which make up the oxide coating is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate.

摘要翻译： 一种在制品的表面上产生耐等离子体热氧化物涂层的方法，其中制品由金属或金属合金组成，金属或金属合金通常选自钇，钕，钐，铽，镝，铒， 镱，钪，铪，铌或其组合。 使用时间 - 温度曲线形成氧化物涂层，其包括初始的快速加热，然后逐渐降低加热速率，以产生本质上为柱状的氧化物涂层结构。 构成氧化物涂层的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金衬底之间的界面处大，并且氧化物涂层在氧化物之间的界面处被压缩 涂层和金属或金属合金基材。