公开(公告)号：US5003366A

公开(公告)日：1991-03-26

申请号：US542796

申请日：1990-06-25

申请人： Tomoyoshi Mishima ,  Junichi Kasai ,  Yoshimasa Murayama

发明人： Tomoyoshi Mishima ,  Junichi Kasai ,  Yoshimasa Murayama

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/06 ,  H01L29/10 ,  H01L29/201 ,  H01L29/70 ,  H01L29/72 ,  H01L29/737

CPC分类号： H01L29/7376 ,  H01L29/1004 ,  Y10S977/759 ,  Y10S977/936

摘要： The present invention provides a hetero-junction bipolar transistor (HBT) whichis so designed that the emitter injection efficiency is improved, the base transit time and base resistance are reduced and yet the lowering of the collector injection efficiency is suppressed, by forming at least one quantum well in a base region of the HBT and determining the width of one of the quantum levels formed in the quantum well and the energy in a barrier layer constituting the quantum well is within kT/2.

公开(公告)号：US4703502A

公开(公告)日：1987-10-27

申请号：US823250

申请日：1986-01-28

申请人： Junichi Kasai ,  Hiroshi Imai ,  Hiroshi Tsuda

发明人： Junichi Kasai ,  Hiroshi Imai ,  Hiroshi Tsuda

IPC分类号： H04S3/00 ,  H04R5/00

CPC分类号： H04S3/00 ,  H04R2499/13

摘要： A system for reproducing stereophonic signals to create a stereophonic sound image in front of each of listeners sitting side by side in a compartment. The system includes a right-hand loudspeaker positioned relative to the right of the first listener sitting on the right, a left-hand loudspeaker positioned relative to the left of the second listener sitting on the left, and a center loudspeaker positioned between the right- and left-hand loudspeakers. A signal generator generates R and L stereophonic signals. The R signal is applied to drive the right- and left-hand loudspeakers. The L signal is fed to drive the center loudspeaker. The signal generator includes a circuit for attenuating the R signal to the right-hand loudspeaker and a circuit for attenuating the R signal to the left-hand loudspeaker.

摘要翻译： 用于再现立体声信号以在每个听众面前并排坐在隔间中的立体声声像的系统。 该系统包括相对于位于右侧的第一听众的右侧定位的右侧扬声器，相对于位于左侧的第二听众的左侧定位的左侧扬声器和位于右侧扬声器之间的中央扬声器， 和左手扬声器。 信号发生器产生R和L立体声信号。 R信号用于驱动左右扬声器。 进给L信号以驱动中置扬声器。 信号发生器包括用于衰减R信号到右侧扬声器的电路和用于衰减到左手扬声器的R信号的电路。

公开(公告)号：US09508651B2

公开(公告)日：2016-11-29

申请号：US12039511

申请日：2008-02-28

申请人： Masanori Onodera ,  Junichi Kasai

发明人： Masanori Onodera ,  Junichi Kasai

IPC分类号： H01L23/48 ,  H01L23/538 ,  H01L21/683 ,  H01L23/498 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L24/08 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/49838 ,  H01L23/5388 ,  H01L24/03 ,  H01L24/17 ,  H01L24/19 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/02333 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/20 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/18162 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/83005

摘要： A semiconductor device includes a semiconductor chip, a bump electrode, a molding portion, a redistribution layer and an outer connection electrode. The bump electrode is provided on an upper face of the semiconductor chip. The molding portion encapsulates an entire side face of the semiconductor chip and seals the bump electrode so that a part of the bump electrode is exposed. The redistribution layer is provided on an upper face of the molding portion and is electrically coupled to the semiconductor chip via the bump electrode. The outer connection electrode is provided on an upper face of the redistribution layer and is electrically coupled to the bump electrode via the redistribution layer.

摘要翻译： 半导体器件包括半导体芯片，凸块电极，成型部分，再分配层和外部连接电极。 凸起电极设置在半导体芯片的上表面上。 模制部分封装半导体芯片的整个侧面并且密封凸起电极，以使凸起电极的一部分露出。 再分配层设置在模制部分的上表面上，并且经由凸块电极电耦合到半导体芯片。 外部连接电极设置在再分布层的上表面上，并且经由再分配层电连接到凸块电极。

公开(公告)号：US09368424B2

公开(公告)日：2016-06-14

申请号：US11133966

申请日：2005-05-20

申请人： Yasuhiro Shinma ,  Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera ,  Junji Tanaka

发明人： Yasuhiro Shinma ,  Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera ,  Junji Tanaka

IPC分类号： H01L21/77 ,  H01L23/31 ,  H01L21/56 ,  H01L25/10 ,  H01L23/29 ,  H01L23/00

CPC分类号： H01L23/3128 ,  H01L21/565 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/105 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A method of fabricating a semiconductor device includes the steps of providing a heat-resistant sheet on an interposer so as to cover electrode terminals provided on the interposer, and sealing a semiconductor chip on the interposer sandwiched between molds with a sealing material. The electrode terminals are covered by the heat-resistant resin for protection, and the semiconductor chip is then sealed with resin. It is thus possible to avoid the problem in which contaminations adhere to the electrode terminals. This makes it possible to prevent the occurrence of resin burrs on the interposer and contamination of the electrode pads and to improve the production yield.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在插入件上设置耐热片，以覆盖设置在插入件上的电极端子，并用密封材料密封夹在模具之间的插入件上的半导体芯片。 电极端子由耐热树脂覆盖以保护，然后用树脂密封半导体芯片。 因此可以避免污染物附着在电极端子上的问题。 这使得可以防止中介层上的树脂毛刺的发生和电极焊盘的污染并提高生产率。

公开(公告)号：US07758675B2

公开(公告)日：2010-07-20

申请号：US11587816

申请日：2005-04-13

申请人： Kenta Naito ,  Satoru Senbayashi ,  Yuichi Hamada ,  Akira Mizuno ,  Junichi Kasai ,  Yoshinobu Tamura

发明人： Kenta Naito ,  Satoru Senbayashi ,  Yuichi Hamada ,  Akira Mizuno ,  Junichi Kasai ,  Yoshinobu Tamura

IPC分类号： B03C3/15

CPC分类号： F01N3/01 ,  B01D53/32 ,  B01D2258/01 ,  B01D2259/818 ,  B03C3/36 ,  B03C3/45 ,  B03C2201/30 ,  F01N2240/20 ,  Y02T10/20 ,  Y10S55/38

摘要： Gas treatment equipment including a corona electrode and a dust-collection electrode facing the corona electrode, and forming corona discharge in gas passing between the corona electrode and the dust-collection electrode by applying a high voltage between them to collect components in the gas wherein a gas turbulence accelerator is located in the vicinity of the surface of the dust-collection electrode facing the corona electrode.

摘要翻译： 气体处理设备包括电晕电极和面向电晕电极的集尘电极，并且通过在它们之间施加高电压而在电晕电极和集尘电极之间形成的气体中形成电晕放电，以收集气体中的成分，其中 气体湍流加速器位于集尘电极的面对电晕电极的表面附近。

公开(公告)号：US07683473B2

公开(公告)日：2010-03-23

申请号：US11540034

申请日：2006-09-28

申请人： Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera

发明人： Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera

IPC分类号： H01L23/04 ,  H01L21/30

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19104 ,  H05K3/323 ,  H05K2203/107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device, a fabrication method therefor, and a film fabrication method, the semiconductor device including a first substrate (e.g., a semiconductor chip), an anisotropic conductive film that is provided on the first substrate and has a wiring pattern having at least a portion providing conduction through the anisotropic conductive film, and a second substrate (semiconductor chip) provided on the anisotropic conductive film and coupled to the first substrate via the portion providing conduction through the anisotropic conductive film. According to the present invention, it is possible to provide a semiconductor device, a fabrication method therefor, and a film fabrication method, by which production costs can be reduced in electrically coupling different positions in upper and lower substrates.

摘要翻译： 本发明提供一种半导体器件及其制造方法和膜制造方法，该半导体器件包括第一衬底（例如，半导体芯片），各向异性导电膜，其设置在第一衬底上并具有布线图案 具有通过各向异性导电膜提供导电的至少一部分，以及设置在各向异性导电膜上的第二基板（半导体芯片），并且经由各向异性导电膜提供导电的部分与第一基板耦合。 根据本发明，可以提供一种半导体器件及其制造方法和薄膜制造方法，通过该方法可以降低在上下基板中电连接不同位置的生产成本。

公开(公告)号：US07642637B2

公开(公告)日：2010-01-05

申请号：US11894828

申请日：2007-08-22

申请人： Masanori Onodera ,  Junichi Kasai ,  Kouichi Meguro ,  Junji Tanaka ,  Yasuhiro Shinma ,  Koji Taya

发明人： Masanori Onodera ,  Junichi Kasai ,  Kouichi Meguro ,  Junji Tanaka ,  Yasuhiro Shinma ,  Koji Taya

IPC分类号： H01L23/02

CPC分类号： H01L25/50 ,  H01L25/105 ,  H01L2221/68318 ,  H01L2224/16 ,  H01L2225/06586 ,  H01L2225/06596 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331

摘要： A carrier for a stacked type semiconductor device includes a lower carrier having a first accommodating portion that accommodates a first semiconductor device, and an upper carrier having a second accommodating portion that accommodates a second semiconductor device stacked on the first semiconductor device so as to be placed in position on the first semiconductor device. It is thus possible to eliminate an additional device used for stacking the semiconductor device, and thereby reduce the cost.

摘要翻译： 叠层型半导体器件的载体包括具有容纳第一半导体器件的第一容纳部分的下载体和具有第二容纳部分的上载体，所述第二容纳部分容纳堆叠在第一半导体器件上的第二半导体器件以便放置 在第一半导体器件上的位置。 因此，可以消除用于堆叠半导体器件的附加装置，从而降低成本。

公开(公告)号：US07605457B2

公开(公告)日：2009-10-20

申请号：US11636155

申请日：2006-12-07

申请人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

发明人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

IPC分类号： H01L23/02 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/49575 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/05548 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.

摘要翻译： 本发明提供一种半导体器件，其包括堆叠的半导体芯片，每个半导体芯片包括半导体衬底和设置在半导体衬底的侧面上且在其侧面上形成有凹部的第一绝缘层; 设置在凹部的内侧面的中心部的第一金属层; 以及第二金属层，其设置在凹部中并连接到形成在每个半导体芯片上的第一金属层。 本发明还提供一种半导体器件的制造方法。

公开(公告)号：US20080274591A1

公开(公告)日：2008-11-06

申请号：US12166293

申请日：2008-07-01

申请人： Koji Taya ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Masanori Onodera ,  Junji Tanaka ,  Murugasan Manikam Achari

发明人： Koji Taya ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Masanori Onodera ,  Junji Tanaka ,  Murugasan Manikam Achari

IPC分类号： H01L21/60

CPC分类号： H01L21/6835 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06593 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： A carrier for a stacked-type semiconductor device includes an accommodating section for accommodating stacked semiconductor devices, guide portions guiding the stacked semiconductor devices, and grooves through which a fluid may flow to the accommodating section and to sides of the stacked semiconductor devices. These grooves facilitate the flow of gas or liquid on the sides of the accommodating sections, and it is thus expected that the flow of hot wind during the reflow process and cleaning liquid during the cleaning process can be facilitated. This improves the production yield and the cleaning effects. Holes for connecting the accommodating section to the outside may be provided at corners of the accommodating section. Gas may be guided from the lower side of the accommodating section, so that heat can be efficiently applied to the semiconductor devices and bonding failures therebetween can be reduced. Further, grooves connecting adjacent holes may be provided for accommodating sections adjacent to each other.

摘要翻译： 叠层型半导体器件的载体包括用于容纳堆叠的半导体器件的容纳部分，引导堆叠的半导体器件的引导部分和流体可以通过该沟槽流动到容纳部分和堆叠的半导体器件的侧面的沟槽。 这些凹槽有助于容纳部分侧面上的气体或液体的流动，因此预期在清洗过程中回流过程中的热风和清洗液体的流动可以被方便。 这提高了产量和清洁效果。 用于将容纳部分连接到外部的孔可以设置在容纳部分的角部。 气体可以从容纳部分的下侧引导，使得可以有效地将热量施加到半导体器件，并且可以减少它们之间的接合故障。 此外，可以设置连接相邻孔的槽，用于容纳彼此相邻的部分。

公开(公告)号：US20080191723A1

公开(公告)日：2008-08-14

申请号：US11886139

申请日：2005-03-11

申请人： Eichi Osato ,  Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera

发明人： Eichi Osato ,  Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera

IPC分类号： G01R31/02 ,  H05K7/00

CPC分类号： G01R1/0483 ,  G01R1/0466

摘要： An IC device (10) held on an IC carrier (24) is a double-sided electrode type BGA IC device (10) provided with bump electrodes (14) on a first surface of a package. The IC device has, on a second surface opposite the first surface, (a) a central protrusion (30), (b) a peripheral portion (32) lower than the protrusion by one step, and (c) upper electrodes (18) formed on the peripheral portion of the IC device. The IC carrier is provided with a frame (36), a cover (40), and a holding means (42). The frame forms a device reception space (38) for receiving the IC device. The cover can cover the upper electrodes while in contact with the periphery of the IC device held on the IC carrier. The holding means can hold the IC device on the IC carrier with the cover covering the upper electrodes of the IC device. The IC device can be set in an IC socket while being mounted on the IC carrier.

摘要翻译： 保持在IC载体（24）上的IC器件（10）是在封装的第一表面上设置有凸块电极（14）的双面电极型BGA IC器件（10）。 IC器件在与第一表面相对的第二表面上具有（a）中心突起（30），（b）比突起低一级的周边部分（32），（c）上电极（18） 形成在IC器件的周边部分上。 IC载体设有框架（36），盖（40）和保持装置（42）。 该帧形成用于接收IC设备的设备接收空间（38）。 盖可以覆盖上电极，同时与保持在IC载体上的IC器件的周边接触。 保持装置可以将IC器件保持在IC载体上，盖子覆盖IC器件的上部电极。 该IC器件可以安装在IC载体上而设置在IC插座中。