公开(公告)号：US08236633B2

公开(公告)日：2012-08-07

申请号：US12059652

申请日：2008-03-31

申请人： Keiichi Sekiguchi ,  Junichi Koezuka ,  Yasuyuki Arai ,  Shunpei Yamazaki

发明人： Keiichi Sekiguchi ,  Junichi Koezuka ,  Yasuyuki Arai ,  Shunpei Yamazaki

IPC分类号： H01L21/84

CPC分类号： H01L27/1214 ,  H01L27/1203 ,  H01L27/127 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

摘要： The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region.

摘要翻译： 本发明提供了一种制造半导体器件的方法，通过该方法，提供了包括有源层，与有源层接触的栅极绝缘膜和与有源层重叠的栅极与其间的栅极绝缘膜的晶体管。 在有源层和第二区域之间，与栅电极重叠的第一区域的一部分添加杂质，而通过从有源层向一个倾斜方向添加杂质，而在有源层中添加杂质 ; 并且第二区域相对于第一区域位于一个方向上。

公开(公告)号：US08218105B2

公开(公告)日：2012-07-10

申请号：US13096099

申请日：2011-04-28

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

IPC分类号： G02F1/1335

CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/133603 ,  G02F2001/13613 ,  H01L27/14678 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592

摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

摘要翻译： 为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板， 布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元， 电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

公开(公告)号：US08207010B2

公开(公告)日：2012-06-26

申请号：US12153721

申请日：2008-05-23

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： H01L31/1824 ,  C23C16/24 ,  C23C16/511 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02678 ,  H01L21/67207 ,  H01L27/14632 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/18 ,  H01L31/1884 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： It is an object to form a high-quality crystalline semiconductor layer directly over a large-sized substrate with high productivity without reducing the deposition rate and to provide a photoelectric conversion device in which the crystalline semiconductor layer is used as a photoelectric conversion layer. A photoelectric conversion layer formed of a semi-amorphous semiconductor is formed over a substrate as follows: a reaction gas is introduced into a treatment chamber where the substrate is placed; and a microwave is introduced into the treatment chamber through a slit provided for a waveguide that is disposed in approximately parallel to and opposed to the substrate, thereby generating plasma. By forming a photoelectric conversion layer using such a semi-amorphous semiconductor, a rate of deterioration in characteristics by light deterioration is decreased from one-fifth to one-tenth, and thus a photoelectric conversion device that has almost no problems for practical use can be obtained.

摘要翻译： 本发明的目的是在不降低沉积速率的情况下以高生产率直接在大尺寸基板上形成高质量的结晶半导体层，并提供其中使用晶体半导体层作为光电转换层的光电转换装置。 在半导体基板上形成由半非晶半导体形成的光电转换层，反应气体被引入放置基板的处理室内， 并且通过设置在与基板大致平行并相对设置的波导的狭缝上，将微波引入处理室，从而产生等离子体。 通过使用这样的半非晶半导体形成光电转换层，通过光劣化的特性劣化率从五分之一降低到十分之一，因此实际使用几乎没有问题的光电转换装置可以是 获得。

公开(公告)号：US08178398B2

公开(公告)日：2012-05-15

申请号：US12219244

申请日：2008-07-18

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： C23C16/511 ,  H01J37/32192

摘要： To improve a deposition rate of a microcrystalline semiconductor layer by using a deposition method and to improve productivity of a display device including a TFT of a microcrystalline semiconductor, a reactive gas containing helium is supplied to a treatment chamber surrounded with a plurality of juxtaposed waveguides and a wall surface; a microwave is supplied to a space which is interposed between juxtaposed waveguides to generate plasma while the pressure of the treatment chamber is held at an atmospheric pressure or a sub-atmospheric pressure typically a pressure of 1×102 Pa or more and 1×105 Pa or less; and a microcrystalline semiconductor layer is deposited over a substrate placed in the treatment chamber. High density plasma is generated by providing slits on sides of the plurality of juxtaposed waveguides which face to another waveguide and supplying a microwave into the treatment chamber through the slit.

摘要翻译： 为了通过使用沉积方法提高微晶半导体层的沉积速率并提高包括微晶半导体的TFT的显示装置的生产率，将含有氦的反应气体供给到被多个并置的波导包围的处理室， 墙面; 将微波提供给介于并置波导之间的空间以产生等离子体，同时处理室的压力保持在大气压或低于大气压的压力为1×102Pa以上至1×105Pa 或更少; 并且在放置在处理室中的衬底上沉积微晶半导体层。 通过在与另一个波导相对的多个并置的波导的侧面上设置狭缝并通过狭缝将微波提供给处理室来产生高密度等离子体。

公开(公告)号：US08054035B2

公开(公告)日：2011-11-08

申请号：US12945228

申请日：2010-11-12

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01M10/46

CPC分类号： H01L27/0629 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q7/00 ,  H01Q9/285 ,  H02J7/025 ,  H02J17/00 ,  H02J50/10 ,  H02J50/27 ,  H02J50/50

摘要： In the field of portable electronic devices in the future, portable electronic devices will be desired, which are smaller and more lightweight and can be used for a long time period by one-time charging, as apparent from provision of one-segment partial reception service “1-seg” of terrestrial digital broadcasting that covers the mobile objects such as a cellular phone. Therefore, the need for a power storage device is increased, which is small and lightweight and capable of being charged without receiving power from commercial power. The power storage device includes an antenna for receiving an electromagnetic wave, a capacitor for storing power, and a circuit for controlling store and supply of the power. When the antenna, the capacitor, and the control circuit are integrally formed and thinned, a structural body formed of ceramics or the like is partially used. A circuit for storing power of an electromagnetic wave received at the antenna in a capacitor and a control circuit for arbitrarily discharging the stored power are provided, whereby lifetime of the power storage device can be extended.

摘要翻译： 在将来的便携式电子设备领域中，期望便携式电子设备更小，更轻便，并且可以通过一次性充电长时间使用，从提供单段部分接收服务 涵盖诸如蜂窝电话的移动物体的地面数字广播的“1-seg”。 因此，增加对电力存储装置的需求，其小而轻，并且能够在不从商业电力接收电力的情况下进行充电。 蓄电装置包括用于接收电磁波的天线，用于存储电力的电容器和用于控制电力的存储和供给的电路。 当天线，电容器和控制电路整体形成和变薄时，部分地使用由陶瓷等构成的结构体。 提供一种用于存储电容器中的天线接收的电磁波的电力的电路和用于任意放电所存储的电力的控制电路，由此可以延长蓄电装置的寿命。

公开(公告)号：US20110262117A1

公开(公告)日：2011-10-27

申请号：US13174924

申请日：2011-07-01

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Yasuyuki Arai

IPC分类号： F27D11/12

CPC分类号： H01L21/67109 ,  C30B33/00

摘要： An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed. A portion of the circulating gas may be expelled, and can be utilized as a heat source in order to preheat a newly introduced gas.

摘要翻译： 本发明的目的是提供一种激活添加到半导体膜中的杂质元素的方法，以及在使用具有低耐热性的基板（例如玻璃）制造半导体器件的过程中，而不改变形状 基板，通过使用短时间的热处理工艺。 另一个目的是提供一种使这种类型的热处理过程成为可能的热处理设备。 用于从反应室的上游侧供给气体的单元，用于加热反应室上游侧的气体的单元，在反应室的下游侧保持被处理基板的单元， 准备将气体从反应室的下游侧向上游侧循环的单元。 用于加热气体的电力量可以通过循环用于加热被处理基板的气体来节约。 循环气体的一部分可以被排出，并且可以用作热源以便预热新引入的气体。

公开(公告)号：US20110260160A1

公开(公告)日：2011-10-27

申请号：US13174980

申请日：2011-07-01

申请人： Tatsuya Honda ,  Yasuyuki Arai

发明人： Tatsuya Honda ,  Yasuyuki Arai

IPC分类号： H01L29/786

CPC分类号： H01L27/1225 ,  H01L27/3244 ,  H01L29/7869 ,  Y10T428/12917

摘要： An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，其中可以减少光刻步骤的数量，可以简化制造工艺，并且可以以低成本高成品率地进行制造。 一种制造半导体器件的方法包括以下步骤：形成半导体膜; 通过使激光束通过包括用于屏蔽激光束的屏蔽的光掩模来照射激光束; 通过在半导体膜中的光掩模中未形成屏蔽的区域激光照射激光束的区域; 形成岛状半导体膜，使得由于其是在光掩模中形成屏蔽的区域而不被激光束照射的区域不升华; 形成作为源极电极和漏极电极之一的第一电极和作为源极电极和漏极电极中的另一个的第二电极; 形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

公开(公告)号：US08043901B2

公开(公告)日：2011-10-25

申请号：US12222686

申请日：2008-08-14

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yukie Suzuki ,  Yoshiyuki Kurokawa

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yukie Suzuki ,  Yoshiyuki Kurokawa

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/124 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765

摘要： The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.

摘要翻译： 本发明涉及一种制造显示装置的方法，该显示装置包括一个p沟道薄膜晶体管和一个具有微晶半导体薄膜的n沟道薄膜晶体管，它们都是反向交错型，并且涉及一种形成方法 包括在薄膜晶体管中的绝缘膜和半导体膜。 向反应室内产生辉光放电等离子体的电极供给具有不同频率的两种以上的高频电力。 提供具有不同频率的高频功率以产生辉光放电等离子体，从而形成半导体或绝缘体的薄膜。 具有不同频率（不同波长）的高频功率被叠加并施加到等离子体CVD装置的电极，从而可以实现等离子体的致密化和均匀性，以防止等离子体的表面驻波的影响。

公开(公告)号：US20110204360A1

公开(公告)日：2011-08-25

申请号：US13048931

申请日：2011-03-16

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L31/0376

CPC分类号： H01L31/03685 ,  H01L31/02008 ,  H01L31/03762 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/1892 ,  H01L2224/73253 ,  H01L2924/12044 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521 ,  H01L2924/00

摘要： In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 μm or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells.

摘要翻译： 为了在层叠型光电转换元件中形成上层单电池和下层电池之间的金属薄膜，硅化物膜等，还需要形成薄膜的工序。 因此，出现诸如光电转换装置的生产率下降的问题。 包括厚度为10μm以下的单晶半导体层作为光电转换层的第一单元电池和设置在第一单元上的非单晶半导体层作为光电转换层的第二单位电池 至少包括，并且导电簇分散在单元电池之间。 导电簇位于下层单元电池和上层单元电池之间以形成欧姆接触; 因此，电流在两个单元电池之间流动。

公开(公告)号：US07978399B2

公开(公告)日：2011-07-12

申请号：US12694866

申请日：2010-01-27

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： G02B26/00 ,  G09G3/34

CPC分类号： G02F1/167 ,  G02B26/026 ,  G02F1/133305 ,  G02F1/1368 ,  G02F2001/1672 ,  G02F2001/1676 ,  G02F2001/1678 ,  G02F2201/123 ,  G09F9/372 ,  G09G3/344 ,  H01L51/0097 ,  H01L51/0545

摘要： A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gale electrodes. The pixel unit further includes a contrast media foamed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.

摘要翻译： 以下示出本发明的显示装置的结构。 显示装置包括像素单元，其包括TFT，其中有源层包含有机半导体材料，用于在布置成与风暴电极相接的绝缘层中的开口部分中形成通道部分。 像素单元还包括在连接到TFT上的电极上发泡的用于改变施加电场时的反射率的造影剂，或者包含在施加电场时改变反射率的带电粒子的微胶囊。 像素单元被塑料基板夹持，并且在塑料基板和像素单元之间设置包括无机绝缘材料的阻挡层。 本发明的目的是提供生产率优良，重量轻且柔软的显示装置。