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61.发明授权
公开(公告)号：US5645663A
公开(公告)日：1997-07-08
申请号：US691429
申请日：1996-08-02
CPC分类号： F21K2/00
摘要： A method of manufacturing a luminous sheet according to the present invention enables a planar display unit radiating fluorescence upon irradiation of ultraviolet rays to be easily offered. A ability of radiating fluorescence is also increased. To this end, an ultraviolet-excited luminous material is applied and dried over a film-like base sheet 10 to form a light emitting layer 20, and a resin solution is applied and dried over an upper surface of the light-emitting layer to form a back layer 40. After thus forming the light-emitting layer 20 and the back layer 40 into a one-piece body, the base sheet 10 is peeled off from the light-emitting layer 20. The specific gravity of the fluorescent material is selected to be three times or more the specific gravity of the resin solution used for forming the ultraviolet-excited luminous material.
摘要翻译： 根据本发明的制造发光片的方法能够使得能够容易地提供紫外线照射时的平面显示单元发射荧光。 辐射荧光的能力也增加。 为此，将紫外线激发的发光体在薄膜状基材片10上涂布并干燥，形成发光层20，在发光层的上表面上涂布干燥树脂溶液，形成 后层40.在将发光层20和背面层40形成为一体的形式之后，将基片10从发光层20剥离。选择荧光材料的比重 是用于形成紫外线激发发光材料的树脂溶液的比重的3倍以上。
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公开(公告)号：US4813018A
公开(公告)日：1989-03-14
申请号：US125540
申请日：1987-11-25
CPC分类号： G11C14/00
摘要： A nonvolatile semiconductor memory device comprises a random access memory (RAM) and an electrically programmable and erasable read only memory (EEPROM). Since a capacitance (106) is formed between a control gate (103) and a drain (102) of a memory transistor, and a source of the memory transistor is rendered to be floating in the RAM write and read operation and in the EEPROM write operation and is supplied with a finite potential in EEPROM read operation, the operation of nonvolatile memory is achieved. A sense amplifier (15, 16) is amplified the potential difference between a bit line (BL) and a control gate line (CGL) is both memory operation and latches the input data in both write operation, such that the potential of the BL and the CGL are determined low or high potential. Besides in the EEPROM write operation, after latching the input data in the sense amplifier, a nonvolatile program is started such that a BL or a CGL is pumped up to program voltage (15-20 V). In the EEPROM read operation, a BL and a CGL are pre-changed in a different potential (BL CGL). After that, the sense amplifier is activated and the EEPROM data is read out.
摘要翻译： 非易失性半导体存储器件包括随机存取存储器（RAM）和电可编程和可擦除只读存储器（EEPROM）。 由于在存储晶体管的控制栅极（103）和漏极（102）之间形成电容（106），并且存储晶体管的源极被浮置在RAM写入和读取操作中以及EEPROM写入 在EEPROM读操作中提供有限电位，实现非易失性存储器的操作。 读出放大器（15,16）被放大，位线（BL）和控制栅极线（CGL）之间的电位差都是存储器操作，并且在两个写操作中锁存输入数据，使得BL和 CGL被确定为低电位或高电位。 除了EEPROM写入操作之外，在将读出放大器中的输入数据锁存之后，启动非易失性程序，使BL或CGL被泵送到编程电压（15-20V）。 在EEPROM读取操作中，BL和CGL在相同电位（BL = CGL）均衡之后被预先改变为不同的电位（BL
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公开(公告)号：US4691216A
公开(公告)日：1987-09-01
申请号：US811881
申请日：1985-12-20
申请人： Yasushi Terada , Takeshi Nakayama
发明人： Yasushi Terada , Takeshi Nakayama
IPC分类号： G11C17/00 , G11C16/06 , G11C16/30 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/112 , H01L29/788 , H01L29/792 , H01L29/78
CPC分类号： G11C16/30
摘要： A semiconductor memory device in which an output of a reference voltage generator for defining the height of a programming high-voltage pulse is changed according to the thickness of a tunnel oxide film and/or a floating gate oxide film of a memory transistor so that a shift amount of a threshold voltage of an EEPROM is maintained at a constant value if the thickness of the oxide films is deviated from a designed value.
摘要翻译： 一种半导体存储器件，其中用于限定编程高电压脉冲的高度的参考电压发生器的输出根据存储晶体管的隧道氧化物膜和/或浮栅氧化膜的厚度而改变，使得 如果氧化膜的厚度偏离设计值，则EEPROM的阈值电压的移位量保持恒定值。
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公开(公告)号：US08952472B2
公开(公告)日：2015-02-10
申请号：US13513923
申请日：2011-10-04
IPC分类号： H01Q7/00 , G01R31/302
CPC分类号： H01Q7/00 , G01R31/3025 , H01L2224/48091 , H01L2224/48472 , H01L2924/15151 , H01L2924/15153 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a semiconductor device capable of changing the setting of the internal operation mode without increasing the number of terminals of the semiconductor device. The semiconductor device includes a transmitting cell, a receiving cell, a semiconductor chip including a transmitting antenna and a receiving antenna, and a conductor. The transmitting antenna is connected to the transmitting cell, and the receiving antenna is connected to the receiving cell. The conductor is provided close to the transmitting antenna and the receiving antenna. Close proximity wireless communication is used between the transmitting cell and the receiving cell.
摘要翻译： 本发明提供一种能够在不增加半导体器件的端子数量的情况下改变内部操作模式的设置的半导体器件。 半导体器件包括发射单元，接收单元，包括发射天线和接收天线的半导体芯片以及导体。 发射天线连接到发射小区，接收天线连接到接收小区。 导体设置在发射天线和接收天线附近。 在发射小区和接收小区之间使用近距离无线通信。
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65.发明授权Electronic circuit system, electronic circuit device, and wireless communication device in which antennas are selected to be paired for wireless communication and the selected antennas are connected to the electronic circuits 有权电子电路系统，电子电路装置和无线通信装置，其中天线被选择为配对用于无线通信，并且所选择的天线连接到电子电路公开(公告)号：US08843095B2
公开(公告)日：2014-09-23
申请号：US13498404
申请日：2011-03-07
申请人： Takeshi Nakayama , Masahiro Ishii
发明人： Takeshi Nakayama , Masahiro Ishii
CPC分类号： H04B7/0691 , H01Q1/1257 , H01Q1/243 , H01Q3/24 , H04B5/0081
摘要： Provided is an electronic circuit system that reduces at least one of a constraint on a positional relation between two electronic circuit devices and a constraint on the number and an arrangement of coils included in each device, when close-coupled wireless communication is established. In the electronic circuit system, wireless communication utilizing inductive coupling between antennas is established between first and second electronic circuit devices. The second electronic circuit device includes an electronic circuit, a plurality of antennas, a connection information generation unit and a connection switching unit. The connection information generation unit selects one of the plurality of antennas to be paired with an antenna included in the first electronic circuit device for use in wireless communication, and the connection switching unit switches one or more of the plurality of antennas to be connected to the electronic circuit.
摘要翻译： 提供一种电子电路系统，当建立紧密耦合的无线通信时，减少对两个电子电路装置之间的位置关系的约束中的至少一个以及对包括在每个装置中的线圈的数量和排列的约束。 在电子电路系统中，在第一和第二电子电路装置之间建立利用天线之间的感应耦合的无线通信。 第二电子电路装置包括电子电路，多个天线，连接信息生成单元和连接切换单元。 连接信息生成单元选择要与包括在第一电子电路装置中的天线配对的多个天线中的一个用于无线通信，并且连接切换单元将要连接的多个天线中的一个或多个切换 电子电路。
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公开(公告)号：US20120241888A1
公开(公告)日：2012-09-27
申请号：US13513923
申请日：2011-10-04
IPC分类号： H01L23/50
CPC分类号： H01Q7/00 , G01R31/3025 , H01L2224/48091 , H01L2224/48472 , H01L2924/15151 , H01L2924/15153 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a semiconductor device capable of changing the setting of the internal operation mode without increasing the number of terminals of the semiconductor device. The semiconductor device 100a includes a transmitting cell, a receiving cell, a semiconductor chip 120 including a transmitting antenna 121a and a receiving antenna 122a, and a conductor 111a. The transmitting antenna 121a is connected to the transmitting cell, and the receiving antenna 122a is connected to the receiving cell. The conductor 111a is provided close to the transmitting antenna 121a and the receiving antenna 122a. Close proximity wireless communication is used between the transmitting cell and the receiving cell.
摘要翻译： 本发明提供一种能够在不增加半导体器件的端子数量的情况下改变内部操作模式的设置的半导体器件。 半导体装置100a包括发送单元，接收单元，包括发送天线121a和接收天线122a的半导体芯片120以及导体111a。 发送天线121a连接到发送小区，接收天线122a连接到接收小区。 导体111a靠近发射天线121a和接收天线122a设置。 在发射小区和接收小区之间使用近距离无线通信。
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公开(公告)号：US08134433B2
公开(公告)日：2012-03-13
申请号：US10950392
申请日：2004-09-28
IPC分类号： H01F6/00
CPC分类号： G01R33/3806 , G01R33/3815
摘要： Main coils, counteracting coils and correction coils, each forming superconducting coil, are enclosed in two cooling medium chamber facing to each other and an imaging region is formed between the two cooling medium chamber positioned in each vacuum chamber, the main coils being divided into two pieces to reduce the current density and the maximum experience magnetic filed and compression stress.
摘要翻译： 每个形成超导线圈的主线圈，反作用线圈和校正线圈被封闭在彼此相对的两个冷却介质腔中，并且在位于每个真空室中的两个冷却介质室之间形成成像区域，主线圈被分成两个 减少电流密度和最大体积磁场和压缩应力。
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公开(公告)号：US07748110B2
公开(公告)日：2010-07-06
申请号：US11826758
申请日：2007-07-18
申请人： Toshiyuki Asahi , Seiji Karashima , Takashi Ichiryu , Seiichi Nakatani , Tousaku Nishiyama , Koichi Hirano , Osamu Shibata , Takeshi Nakayama , Yoshiyuki Saito
发明人： Toshiyuki Asahi , Seiji Karashima , Takashi Ichiryu , Seiichi Nakatani , Tousaku Nishiyama , Koichi Hirano , Osamu Shibata , Takeshi Nakayama , Yoshiyuki Saito
IPC分类号： H05K3/36
CPC分类号： H05K3/403 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01R12/52 , H01R13/2414 , H05K1/0218 , H05K1/0284 , H05K1/141 , H05K1/145 , H05K1/182 , H05K3/20 , H05K3/3442 , H05K3/361 , H05K3/366 , H05K3/368 , H05K2201/043 , H05K2201/048 , H05K2201/049 , H05K2201/055 , H05K2201/056 , H05K2201/09036 , H05K2201/10515 , H05K2201/10689 , H05K2203/302 , Y10T29/49117 , Y10T29/49126 , Y10T29/49208 , H01L2924/00
摘要： A connection member can be produced without a via-forming step. The connection member includes an insulating substrate which has an upper surface, a lower surface opposed to the upper surface, and a side surface which connects these surfaces; and at least one wiring which extends from the upper surface to the lower surface through the side surface.
摘要翻译： 可以在没有通孔形成步骤的情况下制造连接构件。 连接构件包括绝缘基板，其具有上表面，与上表面相对的下表面和连接这些表面的侧表面; 以及至少一个通过侧面从上表面延伸到下表面的布线。
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69.发明授权Semiconductor device and communications terminal and automobile having the same 有权半导体装置和通信终端和汽车具有相同的功能公开(公告)号：US07574312B2
公开(公告)日：2009-08-11
申请号：US11268662
申请日：2005-11-08
IPC分类号： G01F23/00
摘要： A semiconductor device is disclosed in which resistance to the influence of external noise on internal power source network is improved. A semiconductor device operating at any predetermined frequency among a plurality thereof, and having power source networks for supplying power from a power source to internal functional units in the semiconductor device comprises switches, a storage unit, and a control unit. The switches are provided in the power source networks, and switch ON/OFF the supply of power from the power source to the functional units. In the storage unit are mapped and stored a plurality of predetermined operating frequencies and switching information designating an ON state or an OFF state for the switches. The control unit reads, from the storage, switching information corresponding to a current operating frequency, and controls the ON/OFF switching of the switches in accordance with the read switching information.
摘要翻译： 公开了一种半导体器件，其中改善了对外部噪声对内部电源网络的影响的抵抗力。 一种半导体器件，在其多个中以任何预定频率工作，并具有用于从电源向半导体器件中的内部功能单元供电的电源网络，包括开关，存储单元和控制单元。 开关设置在电源网络中，并从电源向功能单元接通/断开电源。 在存储单元中映射并存储多个预定操作频率和指定开关的ON状态或OFF状态的切换信息。 控制单元从存储器读取与当前工作频率相对应的切换信息，并且根据读取的切换信息来控制开关的ON / OFF切换。
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70.发明申请Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage 审中-公开写入根据阈值电压电平变化存储信息的非易失性半导体存储器件的方法公开(公告)号：US20090010070A1
公开(公告)日：2009-01-08
申请号：US12149422
申请日：2008-05-01
CPC分类号： G11C16/12 , G11C11/5628 , G11C16/3459
摘要： In a flash memory, after an initial write operation ends, each bit line associated with a memory cell subjected to a write is precharged and each bit line associated with a memory cell that is not subjected to the write is discharged and verified to detect a memory cell low in threshold voltage and a memory cell thus detected is subjected to an additional write. The verification can be verified without being affected by a current flowing through the memory cell that is not subjected to the write. All memory cells can have their respective threshold voltages set accurately.
摘要翻译： 在闪速存储器中，在初始写入操作结束后，与经过写入的存储器单元相关联的每个位线被预充电，并且与不经过写入的存储器单元相关联的每个位线被放电并被验证以检测存储器 小区阈值电压和这样检测的存储单元经受附加写入。 可以验证验证，而不受流过不经过写入的存储器单元的电流的影响。 所有存储单元可以准确地设置其各自的阈值电压。
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