公开(公告)号：US07229493B2

公开(公告)日：2007-06-12

申请号：US10352934

申请日：2003-01-29

申请人： Yoshihiko Tsuchida ,  Yoshinobu Ono

发明人： Yoshihiko Tsuchida ,  Yoshinobu Ono

IPC分类号： H01L21/265

CPC分类号： H01L21/02579 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/3245 ,  Y10S117/906

摘要： Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.

摘要翻译： 提供了通过对氮化物类型3-5族化合物进行热处理而具有优异的p型氮化物类型3-5族化合物半导体，其具有诸如对电极金属的低接触电阻，低欧姆性等优异的电性能 在特定浓度的含氢气体气氛中掺杂p型掺杂剂的半导体。

公开(公告)号：US07205577B2

公开(公告)日：2007-04-17

申请号：US10162404

申请日：2002-06-05

申请人： Yasushi Iyechika ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Masaya Shimizu

发明人： Yasushi Iyechika ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Masaya Shimizu

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： A group 3–5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.

摘要翻译： 包括具有晶格失配的两层的界面的组3-5化合物半导体，膜厚度为25nm以上的中间层和量子阱层。 化合物半导体具有高结晶度和高质量，并且适用于发光二极管。

公开(公告)号：US20070082467A1

公开(公告)日：2007-04-12

申请号：US10577069

申请日：2004-10-25

申请人： Masahiko Hata ,  Yoshinobu Ono ,  Kazumasa Ueda

发明人： Masahiko Hata ,  Yoshinobu Ono ,  Kazumasa Ueda

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L29/66462 ,  H01L21/2007 ,  H01L29/2003

摘要： The present invention provides a method for manufacturing a compound semiconductor substrate. The method for manufacturing a compound semiconductor substrate comprises the steps of: (a) epitaxially growing a compound semiconductor functional layer 2 on a substrate 1, (b) bonding a support substrate 3 to the compound semiconductor functional layer 2, (c) polishing the substrate 1 and a part of the compound semiconductor functional layer 2 on the side which is in contact with the substrate 1, to remove them, (d) bonding a thermally conductive substrate 4 having a thermal conductivity higher than that of the substrate 1 to the exposed surface of the compound semiconductor functional layer 2 which is provided in the step (c) to obtain a multilayer substrate and (d) separating the support substrate 3 from the multilayer substrate.

摘要翻译： 本发明提供一种化合物半导体衬底的制造方法。 制造化合物半导体衬底的方法包括以下步骤：（a）在衬底1上外延生长化合物半导体功能层2，（b）将支撑衬底3接合到化合物半导体功能层2，（c） 基板1和与基板1接触的一侧的化合物半导体功能层2的一部分，以除去它们;（d）将具有比基板1的导热率高的导热性基板4接合到 在步骤（c）中提供的化合物半导体功能层2的暴露表面以获得多层基板，以及（d）将支撑基板3与多层基板分离。

公开(公告)号：US07098484B2

公开(公告)日：2006-08-29

申请号：US10614062

申请日：2003-07-08

申请人： Sadanori Yamanaka ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Yasushi Iyechika

发明人： Sadanori Yamanaka ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Yasushi Iyechika

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14

摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

公开(公告)号：US20060172512A1

公开(公告)日：2006-08-03

申请号：US10546983

申请日：2004-03-04

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yoshinobu Ono

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yoshinobu Ono

IPC分类号： H01L21/20

CPC分类号： H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647

摘要： The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.

摘要翻译： 本发明涉及一种用于制造具有由通式为III-V族化合物半导体晶体表示的外延基板的方法，该III-V族化合物半导体晶体由以下通式表示：＆lt; N（其中，x + y + z = 1,0 <= x <=1,0,0≤i≤1,0<= z <= 1）具有降低的位错密度，包括第一步覆盖 具有由与III-V族化合物半导体不同的材料制成的掩模，使得通过使用具有多个投影形状的III-V族化合物半导体晶体，仅使晶体周围的部分构成开口，第二步是使 III-V族化合物半导体晶体通过在开口处使用III-V族化合物半导体晶体作为晶种横向。 根据本发明，获得具有位错密度低且翘曲少的III-V族化合物半导体晶体的外延基板。

公开(公告)号：US06471491B1

公开(公告)日：2002-10-29

申请号：US09526742

申请日：2000-03-16

申请人： Yoshinobu Ono ,  Yukio Takahashi ,  Hideki Machimura ,  Minoru Hashida ,  Masayoshi Kotaki ,  Takefumi Yamamura

发明人： Yoshinobu Ono ,  Yukio Takahashi ,  Hideki Machimura ,  Minoru Hashida ,  Masayoshi Kotaki ,  Takefumi Yamamura

IPC分类号： F04B112

CPC分类号： F04B1/2021 ,  F04B1/122 ,  F04B1/14 ,  F04B53/164

摘要： The present invention provides an axial plunger pump which does not need bellows by restricting fuel to a cylinder bore configuring a pump portion and by lubricating the other portion with oil. The high pressure fuel pump comprises a plunger reciprocating according to a shaking movement of a swash plate, a cylinder block forming a pump chamber together with the plunger, and a sealing member provided between the plunger and a cylinder bore for sealing oil leaked from the pump chamber to a chamber surrounding the pump chamber, wherein oil in the oil chamber is supplied from the outside of the high pressure fuel pump.

公开(公告)号：US6104044A

公开(公告)日：2000-08-15

申请号：US861820

申请日：1997-05-23

申请人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

发明人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

IPC分类号： H01L21/285 ,  H01B1/16 ,  H01L21/28 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L29/205 ,  H01L27/15 ,  H01S3/19

CPC分类号： H01L33/40 ,  H01L29/452 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/32341

摘要： Disclosed is an electrode material for Group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) doped with a p-type impurity which is capable of obtaining good ohmic contact, and an electrode using the same, thereby making it possible to reduce a driving voltage of a device using the compound semiconductor. The electrode material is a metal comprising at least Ca and a noble metal, wherein the total amount of the weight of Ca and the noble metal is not less than 50% by weight and not more than 100% by weight based on the weight of the whole electrode material.

摘要翻译： 公开了由通式In x Ga y Al z N表示的用于III-V族化合物半导体的电极材料（假定x + y + z =1,0,0≤x≤1,0≤y≤1，和 掺杂有能够获得良好的欧姆接触的p型杂质，以及使用其的电极，从而可以降低使用化合物半导体的器件的驱动电压。 电极材料是至少包含Ca和贵金属的金属，其中Ca和贵金属的重量总量不小于50重量％且不大于100重量％，基于 整个电极材料。

公开(公告)号：US4889678A

公开(公告)日：1989-12-26

申请号：US200619

申请日：1988-05-31

申请人： Keiichi Obata ,  Suguru Yoshida ,  Masahiro Saitoh ,  Yoshinobu Ono

发明人： Keiichi Obata ,  Suguru Yoshida ,  Masahiro Saitoh ,  Yoshinobu Ono

IPC分类号： B29C37/00 ,  B29C39/26 ,  B29C39/32 ,  B29C39/40 ,  B29C39/02

CPC分类号： B29C39/40 ,  B29C37/005 ,  B29C39/265 ,  B29C39/32

摘要： An elongate packing is sandwiched between two sheet-like mold members in an encircling manner to define a mold cavity therebetween, then a thermosetting plastic material is poured into the mold cavity, and the thermosetting plastic material is heated and set in the mold cavity. The upper and lower mold members are held against deformation transverse thereof so as not to be deformed by the shrinkage of the thermosetting plastic material when the latter is set, and the packing is allowed to move transversely thereof for following the shrinkage of the thermosetting plastic material when the latter is set. In some embodiments, the packing comprises a packing body adapted to be sandwiched between the mold members for preventing the plastic material from flowing out of the mold cavity with a flange joined to the packing body and adapted to be held against peripheral edges of the mold members.

公开(公告)号：US4779562A

公开(公告)日：1988-10-25

申请号：US25253

申请日：1987-03-12

申请人： Yoshinobu Ono

发明人： Yoshinobu Ono

IPC分类号： B05C3/02 ,  B05C3/109 ,  B05D1/20 ,  G03F7/16 ,  B05C3/18

CPC分类号： B82Y30/00 ,  B05C3/02 ,  B05C3/109 ,  B05D1/206 ,  B82Y40/00 ,  G03F7/165

摘要： An apparatus for depositing a mono-molecular layer on a substrate surface comprises first and second containers which contain a liquid and are connected via a connecting passage, and a pressure applying mechanism for applying pressure on the liquid in the second container. A mono-molecular layer is formed at the liquid surface of the liquid in the first container, and the mono-molecular layer is deposited on the substrate surface by controlling the pressure applying mechanism so that the liquid surface of the first container rises and falls with respect to the substrate which is essentially stationary.

摘要翻译： 用于在基板表面上沉积单分子层的装置包括含有液体并通过连接通道连接的第一和第二容器以及用于对第二容器中的液体施加压力的压力施加机构。 在第一容器的液体的液面上形成单分子层，通过控制压力施加机构使单分子层沉积在基板表面上，使得第一容器的液面随着 相对于基本上是静止的基底。