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公开(公告)号：US07205577B2
公开(公告)日：2007-04-17
申请号：US10162404
申请日：2002-06-05
IPC分类号： H01L33/00
摘要： A group 3–5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.
摘要翻译： 包括具有晶格失配的两层的界面的组3-5化合物半导体，膜厚度为25nm以上的中间层和量子阱层。 化合物半导体具有高结晶度和高质量，并且适用于发光二极管。
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公开(公告)号：US07098484B2
公开(公告)日：2006-08-29
申请号：US10614062
申请日：2003-07-08
IPC分类号： H01L33/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
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3.发明申请Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device 失效用于化合物半导体发光器件的外延衬底，其制造方法和发光器件公开(公告)号：US20060267035A1
公开(公告)日：2006-11-30
申请号：US11495748
申请日：2006-07-31
IPC分类号： H01L33/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
摘要翻译： 为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。 第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的AlGaN：Mg层作为中间层 。 通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构， 提高空穴注入发光层结构的效率，从而提高发光效率。
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4.发明授权Method for producing and epitaxial substrate for compound semiconductor light-emitting device 失效用于化合物半导体发光器件的制造和外延衬底的方法公开(公告)号：US07459326B2
公开(公告)日：2008-12-02
申请号：US11495748
申请日：2006-07-31
IPC分类号： H01L21/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
摘要翻译： 为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。 第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的作为中间层的AlGaN：Mg层 。 通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构， 提高空穴注入发光层结构的效率，从而提高发光效率。
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5.发明授权Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor 失效III-V族化合物半导体和III-V族化合物半导体的制造方法和系统公开(公告)号：US06875273B2
公开(公告)日：2005-04-05
申请号：US10145713
申请日：2002-05-16
IPC分类号： H01L21/20 , C23C16/44 , C23C16/455 , C30B25/14 , C30B29/40
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/455 , C23C16/45561 , C23C16/45572 , C23C16/45578 , C23C16/45591 , C30B25/14 , C30B29/40 , C30B29/403 , C30B29/406
摘要： In a semiconductor manufacturing system for manufacturing compound semiconductor by MOCVD, a lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of a semiconductor substrate disposed in a reactor, a main body of the lead-in member is constituted as a hollow member to form a feed gas guide passage for conducting the feed gas in an prescribed direction and is formed with multiple orifices, and the feed gas in the feed gas guide passage is jetted from the orifices in a direction perpendicular to the prescribed direction so that the semiconductor substrate is bathed in a feed gas flow of uniform amount jetted from the lead-in member in this manner. Furthermore, a pressure differential produced between the inner side and outer side of the nozzle member enables the feed gas jetted from the nozzle member to flow over the whole surface of the substrate at a uniform flow rate. The multiple feed gases are led to the vicinity of the substrate individually and the blow gas blows the multiple feed gases toward the substrate to favorably from desired thin film crystal.
摘要翻译： 在通过MOCVD制造化合物半导体的半导体制造系统中，提供了一种引入构件，用于将从进料气体供应单元供应的进料气体引导到设置在反应器中的半导体基板的表面上，引入件的主体 构件构成为中空构件，以形成用于沿预定方向导入进料气体的进料气体引导通道，并且形成有多个孔，并且进料气体引导通道中的进料气体从孔口沿垂直于 以使得半导体衬底以这种方式浸入从引入构件喷射的均匀量的进料气体流中。 此外，在喷嘴构件的内侧和外侧之间产生的压力差使得从喷嘴构件喷射的进料气体以均匀的流速流过基板的整个表面。 多个进料气体被单独地引导到基材附近，并且吹气将多个进料气体朝向基板吹送，以期望从期望的薄膜晶体。
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公开(公告)号：US06806502B2
公开(公告)日：2004-10-19
申请号：US09987660
申请日：2001-11-15
IPC分类号： H01L3112
CPC分类号： H01L33/325 , Y10S438/933 , Y10S438/936
摘要： Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1×1017 cm− or more and 1×1021 cm−3 or less, which can be laminated to control the carrier concentration of an InGaAlN-type mixed crystal in a low range with high reproducibility. Also provided is a 3-5 group compound semiconductor in which the carrier concentration of an InGaAlN-type mixed crystal is controlled in a low range with high reproducibility, and a light emitting device having high light emitting efficiency.
摘要翻译： 提供具有1×10 17 cm -3以上且1×10 21 cm -3以下的p型掺杂剂浓度的3-5组化合物半导体，其可以层压以控制载体 浓度高的InGaAlN型混合晶体，重现性高。 还提供了以高重现性将InGaAlN型混晶体的载流子浓度控制在低范围内的3-5组化合物半导体和具有高发光效率的发光器件。
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7.发明授权Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element 失效3-5族氮化物半导体多层基板，第3-5族氮化物半导体独立减渣剂的制造方法以及半导体元件公开(公告)号：US08053811B2
公开(公告)日：2011-11-08
申请号：US11920563
申请日：2006-05-02
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01S2304/12
摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
摘要翻译： 提供3-5族氮化物半导体多层基板（1）及其制造方法。 半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。 然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。 半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。
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8.发明授权3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same 有权3-5族化合物半导体，其制造方法和使用其的化合物半导体元件公开(公告)号：US07229493B2
公开(公告)日：2007-06-12
申请号：US10352934
申请日：2003-01-29
申请人： Yoshihiko Tsuchida , Yoshinobu Ono
发明人： Yoshihiko Tsuchida , Yoshinobu Ono
IPC分类号： H01L21/265
CPC分类号： H01L21/02579 , C30B25/02 , C30B29/40 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/3245 , Y10S117/906
摘要： Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.
摘要翻译： 提供了通过对氮化物类型3-5族化合物进行热处理而具有优异的p型氮化物类型3-5族化合物半导体，其具有诸如对电极金属的低接触电阻，低欧姆性等优异的电性能 在特定浓度的含氢气体气氛中掺杂p型掺杂剂的半导体。
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9.发明申请Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Manufacturing Group 3-5 Nitride Semiconductor Free-Standing Subtrate, and Semiconductor Element 失效第3-5族氮化物半导体多层基板，制造方法3-5氮化硅半导体自由放电，半导体元件公开(公告)号：US20090085165A1
公开(公告)日：2009-04-02
申请号：US11920563
申请日：2006-05-02
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01S2304/12
摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
摘要翻译： 提供3-5族氮化物半导体多层基板（1）及其制造方法。 半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。 然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。 半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。
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公开(公告)号：US07754515B2
公开(公告)日：2010-07-13
申请号：US10558427
申请日：2004-05-28
CPC分类号： H01L33/32
摘要： A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InxGayAlzN (wherein x+y+z=1, 0
摘要翻译： 包括具有两个阻挡层的单量子阱结构的组III-V族化合物半导体和由下式表示的量子阱层：In x Ga y Al z N（其中x + y + z = 1,0
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