公开(公告)号：US09017479B2

公开(公告)日：2015-04-28

申请号：US12181402

申请日：2008-07-29

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B35/00 ,  C30B11/04 ,  C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B29/40 ,  C30B7/00

CPC分类号： C30B9/10 ,  C30B7/00 ,  C30B19/02 ,  C30B19/06 ,  C30B29/406 ,  C30B35/002 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1064 ,  Y10T117/1096

摘要： The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.

摘要翻译： 该装置具有用于存储溶液的坩埚; 用于存储坩埚的内部容器; 用于存储内部容器的加热容器，包括加热元件的加热容器，设置有加热元件的容器主体和与容器主体组合的盖子; 以及用于储存所述加热容器并用于装入至少包含氮气的气体的压力容器。 盖子还具有与容器主体相对于水平面倾斜的配合表面。

公开(公告)号：US08657955B2

公开(公告)日：2014-02-25

申请号：US12462429

申请日：2009-08-03

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B11/02

CPC分类号： C30B29/406 ,  C30B9/12

摘要： It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

摘要翻译： 提供一种通过助熔剂生长氮化镓单晶的熔融组合物。 熔融组合物含有镓，钠和钡，相对于100摩尔％的钠，钡的含量为0.05〜0.3摩尔％。

公开(公告)号：US08187507B2

公开(公告)日：2012-05-29

申请号：US12514836

申请日：2007-11-14

申请人： Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

发明人： Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

IPC分类号： H01B1/06 ,  C01G15/00

CPC分类号： C30B29/406 ,  C30B19/02 ,  Y10T117/1024

摘要： A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

摘要翻译： 提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。 本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序 互相反应。 根据本发明的制造方法，能够防止成核，如图1所示， 如图4所示，可以生长非极性表面。

公开(公告)号：US08123856B2

公开(公告)日：2012-02-28

申请号：US12225550

申请日：2007-04-05

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/00 ,  C30B19/06

CPC分类号： C30B29/403 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.

摘要翻译： 在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。 提供本发明的装置用于制造III族氮化物基化合物半导体。 该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于 将从外部容器外部至少含有氮气的气体进料到反应器中。 进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

公开(公告)号：US08038794B2

公开(公告)日：2011-10-18

申请号：US11628253

申请日：2005-04-15

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： C30B29/38

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：US08025728B2

公开(公告)日：2011-09-27

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B29/38

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 在生长容器中将晶种浸入含有助熔剂和单晶材料的熔体中，以在籽晶上产生氮化物单晶。 在熔体（TS）和熔体（TB）的最下部分的气 - 液界面处的温度差（TS-TB）设定为1℃或更大和8℃或更低。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US20100301358A1

公开(公告)日：2010-12-02

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L29/20 ,  C30B9/12 ,  H01L29/772 ,  H01L33/30 ,  H01L31/0304 ,  H01L21/20

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US07833347B2

公开(公告)日：2010-11-16

申请号：US12212722

申请日：2008-09-18

申请人： Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B11/00 ,  C30B7/00

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B35/00 ,  Y10T117/1096

摘要： A nitride single crystal is produced using a growth solution containing an easily oxidizable material. A crucible for storing the growth solution, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber disposed inside the pressure vessel and outside the crucible are used to grow the nitride single crystal.

摘要翻译： 使用含有易氧化材料的生长溶液来生产氮化物单晶。 用于储存生长溶液的坩埚，用于储存坩埚的压力容器和至少含有氮气的装置以及设置在压力容器内部和坩埚外部的氧吸收器用于生长氮化物单晶。

公开(公告)号：US20100078606A1

公开(公告)日：2010-04-01

申请号：US12524811

申请日：2008-03-05

申请人： Osamu Yamada ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Takeshi Hatakeyama ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Osamu Yamada ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Takeshi Hatakeyama ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： H01B1/06 ,  C01B21/06 ,  C30B17/00

CPC分类号： H01L31/03044 ,  C30B9/10 ,  C30B11/12 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  G02B1/02

摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

摘要翻译： 提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。 该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器， 导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。 在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

公开(公告)号：US20090000542A1

公开(公告)日：2009-01-01

申请号：US12192428

申请日：2008-08-15

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B19/02

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1024

摘要： It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.

摘要翻译： 公开了一种使用含有易氧化物质的助熔剂生长氮化物单晶的装置。 该装置具有用于储存焊剂的坩埚; 压力容器，用于储存所述坩埚并给至少含有氮气的气氛充电; 设置在压力容器内并从坩埚中排出的炉料; 加热炉附着在炉料上; 以及覆盖炉料的耐碱和耐热金属层。